iw iw iw For 45W USB-PD Design EBC10211

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iw1781-30+iw676-00+iw656-45-08 For 45W USB-PD Design EBC10211 General Design Specification: 1. AC Input Range 90-264Vac 2. DC Output 5V/3A, 9V/3A, 15V/3A, 20V2.25A 3.

1 iw iw iw For 45W USB-PD Design EBC10211 General Design Specification: 1. AC Input Range Vac 2. DC Output 5V/3A, 9V/3A, 15V/3A, 20V2.25A 3. Meet No-Load standby Power Consumption Requirement 4. Max Output Ripple & Noise < 150mV 5. Support PD2.0 June 23, 2017 personal personal portable portable connected connected

death. When the evaluation board is powered, never touch the board or its electrical circuits since they may be operating at high voltages that can cause an electrical shock hazard.

2 Warning Disclaimer for High Voltage (Mains Powered) Evaluation Boards Warning This evaluation board is powered by AC mains voltage. When powered, this evaluation board generates non-insulated high voltages which may produce electrical shock, burn, and/or fire hazards, resulting in risk of property damage, personal injury, and/or death. When the evaluation board is powered, never touch the board or its electrical circuits since they may be operating at high voltages that can cause an electrical shock hazard. TO BE USED FOR EVALUATION PURPOSES ONLY This board is intended for evaluation purposes only and not intended for commercial use in an end product. Any other use is strictly prohibited by Dialog Semiconductor. WORK AREA AND PERSONAL SAFETY This board should be used in a test area/laboratory specifically designed and designated for working with, and evaluating high-voltage electrical devices. Only trained and qualified professional personnel with experience, knowledge and training in the use of high-voltage electrical circuits should use this evaluation board. Trained personnel must use required personal protective equipment and required laboratory equipment when working with the evaluation board. The professional personnel operating this evaluation board and the test area/laboratory in which it is operated must be qualified according to the local regulations, guidelines and labor laws applicable to working with non-isolated mains voltages and high voltage circuits. An isolated housing is highly recommended when using this evaluation board. Use this evaluation board at your own risk. NOT AGENCY APPROVED This evaluation board has not been agency tested or approved for safety, technical performance, and/or regulatory requirements, such as electromagnetic interference or other technical regulatory or safety Dialog Semiconductor 2

3 1.1 Specification Description Symbol Min Typ Max Units Comment Input Voltage VIN VAC 2 Wire Frequency fline 47 50/60 63 Hz No-load Input Power (230VAC) 75 mw Measured under 5V output Output VOUT V See the next page Protocol Meets PD2.0 (4PDOs) Environmental Conducted EMI Meets FCC Part 15B / EN55032B Output is Floating Safety Designed to meet IEC60950, UL1950 Class II Ambient Temperature TAMB 0 40 C Free convection, sea Dialog Semiconductor 3

4 1.2 Specification Output 5V/3A 9V3A 15V3A 20V3A Description Symbol Min Typ Max Units Comment Output Voltage VOUT V Measured at PCB-End Output Current IOUT 0 3 A Over Current Protection IOCP A Ripple & Noise VRIPPLE 150 mvp_p Note1 Average Efficiency % Refer to CoC_V5_Tier2 Output Voltage VOUT V Measured at PCB-End Output Current IOUT A Over Current Protection IOCP A Ripple & Noise VRIPPLE 150 mvp_p Note1 Average Efficiency 87.3 % Refer to CoC_V5_Tier2 Output Voltage VOUT V Measured at PCB-End Output Current IOUT A Over Current Protection IOCP A Ripple & Noise VRIPPLE 150 mvp_p Note1 Average Efficiency % Refer to CoC_V5_Tier2 Output Voltage VOUT V Measured at PCB-End Output Current IOUT A Over Current Protection IOCP A Ripple & Noise VRIPPLE 150 mvp_p Note1 Average Efficiency % Refer to CoC_V5_Tier2 *Note1: Add 0.1uF Ceramic capacitor and 10uF E-cap at the end of connector and set oscilloscope at 20MHz Dialog Semiconductor 4

5 3. Dialog Semiconductor 5

3. Circuit Board Photograph Top View Bottom View 53mm CS12N70F A9R (12A700V) iw656-45-08

6 3. Circuit Board Photograph Top View Bottom View 53mm CS12N70F A9R (12A700V) iw RM10 56mm iw BSC070N10NS5 iw Primary Sensing Dialog Semiconductor 6

4. Transformer Drawing SCHEMATIC 2 Primary 2 X Primary 1 1 4 Bias/Forward 3 Shielding 11Ts 22Ts 9Ts X 9Ts 12.5Ts X 5Ts A Secondary B Note: Dot ( ) denote electrical start.

Core is connected to Pin- 3(Pri_GND) by wire Winding Start pin-1& End pin-2 in Clockwise direction-looking from bottom side of the Bobbin 2(F) X(S) 1(S) Bottom 4 1 Rotating direction of winding

7 4. Transformer Drawing SCHEMATIC 2 Primary 2 X Primary Bias/Forward 3 Shielding 11Ts 22Ts 9Ts X 9Ts 12.5Ts X 5Ts A Secondary B Note: Dot ( ) denote electrical start. Electrical start could be different to Mechanical Winding start. Core is connected to Pin- 3(Pri_GND) by wire Winding Start pin-1& End pin-2 in Clockwise direction-looking from bottom side of the Bobbin 2(F) X(S) 1(S) Bottom 4 1 Rotating direction of winding machine 2UEW 0.1mmx20 11Ts Primary2 (clockwise) 2UEW 0.24mmx2 12.5Ts Shielding (Clockwise) X Top 2Ts tape B(F) 2Ts tape 2Ts tape 2Ts tape ELECTRICAL SPECIFICATIONS: 1. Primary Inductance (Lp) 2. Electrical Strength = 3KV, 50/60Hz,1Min(pins1~4to pins A~B) MATERIALS: 1. Core : RM10(Ferrite Material JP95 or equivalent) 2. Bobbin :RM10,Vertical 3. Magnet Wires (pri): Type 2-UEW 4. Magnet wires(sec): Triple Insulated Wire 5. Layer Insulation Tape :3M1298 or equivalent. FINISHED : 1. Varnish the complete assembly 2. Core is connected to pin3 1(F) 1(S) 2(S) X(F) 1(S) Triple Insulated Wire 0.25mmX15 5Ts Secondary (Clockwise) 2UEW 0.22mmx2 9Ts Forward (Clockwise) 2UEW 0.22mmx1 9Ts Bias (Clockwise) 2UEW 0.1mmx20 11Ts Primary1 (clockwise) 2UEW 0.1mmx20 11Ts Primary1 (Clockwise) RM10, the width of winding slot is 8.0mm X A(S) 2Ts tape 1T Dialog Semiconductor 7

8 5. Bill of Material Item Qty. Ref. Description 1 1 U1 iw , Off-line Digital PSR & PWM & VMS Controller, SOIC U2 LTV1008, CTR:130%-260%, Photo-coupler 3 1 U51 iw676-00, SR Controller, SOT U52 iw , USB-PD Controller, TDFN12, 3x3mm 5 1 F1 2A250V, Fus e, s ize: 4mmX8mmX7mm 6 1 L2 35mH, Common-mode choke, T16X9X8, Core Material:15K, Wire:0.4mmX60T 7 1 BD1 KBP308, 3A800V, KBPF 8 1 Q1 CS12N70F A9H, 700V0.64R, N-channel MOSFET, TO-220F 9 1 Q2 BC807, PNP Trans is tor, Vceo-45V,Ic -500mA, SOT Q3 DMX1015E, depletion mode MOSFET, SOT Q4 DMZ6005, 600V12mA, depletion mode MOSFET, SOT Q51 BSC070N10NS5, 100V, 7mΩ, N-Channel MOSFET, DFN5X Q52 BSZ031NE2LS5, 20V40A, 3.1mΩ, N-Channel MOSFET, DFN3X3_EP 14 1 T1 RM10, Trans former, Vertical type, Height: 16mm, Core Material: JP CE1, CE3 22uF, 400V, Low-ESR E-Cap, Ф10mmX16mm 16 1 CE2 33uF, 400V, Low-ESR E-Cap, Ф13mmX16mm 17 1 C1 1nF, 250V, X7R, SMD C2 220pF, 25V, X7R, SMD C3 120pF, 25V, X7R, SMD C4 6.8pF, 1000V, X7R, SMD C5 22pF, 25V, X7R, SMD C6 4.7uF, 25V, X7R, SMD C7 12uF, 63V, E-cap, Ф5mmX8mm 24 1 C8 220pF, 250V, X7R, SMD CE uF, 25V, Solid-cap, Ф10mmX16mm 26 1 CE52 680uF, 25V, Solid-cap, Ф8mmX16mm 27 1 C51 1nF, 100V, X7R, SMD C52, C53 100nF, 25V, X7R, SMD C54, C56 470pF, 25V, X7R, SMD C55 4.7uF, 25V, X7R, SMD CY1 470pF, Y-Cap 32 1 D1 FR207, 2A1000V, Fas t Recovery Rectifier 33 1 D2 1N4148, Fas t Rectifier Diode, SMD D3 FR107, 1A1000V, Fas t s witching diode(trr=500ns), Dialog Semiconductor 8

9 5. Bill of Material(Cont.) Item Qty. Ref. Description 35 1 NTC1 SCK08053MSY, 8D-5ohm 36 2 R1, R2 430KΩ ±5%, SMD R3, R4 300KΩ ±5%, SMD R5, R6, R19 330Ω ±5%, SMD R7 3.9KΩ ±5%, SMD R8 820Ω ±5%, SMD R9 12KΩ ±1%, SMD R10, R11, R12, R20 1.5Ω ±1%, SMD R13 56Ω ±5%, SMD R14 10KΩ ±5%, SMD R15, R18 1MΩ ±5%, SMD R16 1.1Ω ±5%, SMD R17 22KΩ ±1%, SMD R21 0Ω ±1%, SMD R51 22Ω ±5%, SMD R52 22Ω ±5%, SMD R53 12Ω ±5%, SMD R54 3.6KΩ ±5%, SMD R55, R56, R63 10Ω ±5%, SMD R57 39Ω ±5%, SMD R58 47Ω ±5%, SMD R59 100Ω ±5%, SMD R60 220Ω ±5%, SMD USB51 USB Type-C connecter, Vertical Dialog Semiconductor 9

10 6.1 Regulation and Efficiency Measurement V IN P IN V OUT I OUT V RIPPLE P OUT η Average OCP (V AC ) (W) (V) (A) (mv P-P ) (W) (%) η(%) (A) CoC_V5_Tier2 Requirement 1. Minimum Efficiency in Active Mode at 10% load of full rated output current is 72.48%. 2. Minimum Four Point (25%, 50%, 75% and 100%) Average Efficiency in Active Mode is 81.84%. *Note: Output voltage is measured at Dialog Semiconductor 10

11 6.2 Regulation and Efficiency Measurement V IN P IN V OUT I OUT V RIPPLE P OUT η Average OCP (V AC ) (W) (V) (A) (mv P-P ) (W) (%) η(%) (A) CoC_V5_Tier2 Requirement 1. Minimum Efficiency in Active Mode at 10% load of full rated output current is 77.3%. 2. Minimum Four Point (25%, 50%, 75% and 100%) Average Efficiency in Active Mode is 87.3%. *Note: Output voltage is measured at Dialog Semiconductor 11

12 6.3 Regulation and Efficiency Measurement V IN P IN V OUT I OUT V RIPPLE P OUT η Average OCP (V AC ) (W) (V) (A) (mv P-P ) (W) (%) η(%) (A) CoC_V5_Tier2 Requirement 1. Minimum Efficiency in Active Mode at 10% load of full rated output current is 78.85%. 2. Minimum Four Point (25%, 50%, 75% and 100%) Average Efficiency in Active Mode is 88.85%. *Note: Output voltage is measured at Dialog Semiconductor 12

13 6.4 Regulation and Efficiency Measurement V IN P IN V OUT I OUT V RIPPLE P OUT η Average OCP (V AC ) (W) (V) (A) (mv P-P ) (W) (%) η(%) (A) CoC_V5_Tier2 Requirement 1. Minimum Efficiency in Active Mode at 10% load of full rated output current is 78.85%. 2. Minimum Four Point (25%, 50%, 75% and 100%) Average Efficiency in Active Mode is 88.85%. *Note: Output voltage is measured at Dialog Semiconductor 13

14 PIN(mW) 7. No-Load Standby Power No-Load Standby Power Consumption No-Load standby power consumption is <75mW at 230VAC! Dialog Semiconductor 14

15 8. Output VI Characteristics 3V/Div VIN=90VAC/60Hz 3V/Div VIN=264VAC/50Hz 20V 20V 15V 15V 9V 9V 5V 5V 0.5A/Div 0.5A/Div 2.5A 3A 3.5A 2.5A 3A 3.5A *Note: Output voltage is monitored at Dialog Semiconductor 15

16 9. Turn-on Delay Time 90VAC, No Load TST_DELAY=1.772S 90VAC, Full Load Dialog Semiconductor 16

17 10. AC Startup Voltage No Load VIN_STARTUP =62.2VAC Full Load Dialog Semiconductor 17

18 11. AC Brownout Voltage No Load VIN_BROWNOUT =22.2VAC Full Load Dialog Semiconductor 18

19 12.1 One-time VIN=90VAC/60Hz, IOUT=0A 3A V OUT_MIN =4.66V VIN=115VAC/60Hz, IOUT=0A 3A VOUT_MIN=4.66V VIN=230VAC/50Hz, IOUT=0A 3A VOUT_MIN=4.66V VIN=264VAC/50Hz, IOUT=0A 3A VOUT_MIN=4.66V * Note: Output voltage is monitored at Dialog Semiconductor 19

20 12.2 One-time VIN=90VAC/60Hz, IOUT=0A 3A V OUT_MIN =8.18V VIN=115VAC/60Hz, IOUT=0A 3A VOUT_MIN=8.2V VIN=230VAC/50Hz, IOUT=0A 3A VOUT_MIN=8.22V VIN=264VAC/50Hz, IOUT=0A 3A VOUT_MIN=8.24V * Note: Output voltage is monitored at Dialog Semiconductor 20

21 12.3 One-time VIN=90VAC/60Hz, IOUT=0A 3A V OUT_MIN =13.7V VIN=115VAC/60Hz, IOUT=0A 3A VOUT_MIN=13.8V VIN=230VAC/50Hz, IOUT=0A 3A VOUT_MIN=13.8V VIN=264VAC/50Hz, IOUT=0A 3A VOUT_MIN=13.7V * Note: Output voltage is monitored at Dialog Semiconductor 21

22 12.4 One-time VIN=90VAC/60Hz, IOUT=0A 2.25A V OUT_MIN =19.3V VIN=115VAC/60Hz, IOUT=0A 2.25A VOUT_MIN=19.1V VIN=230VAC/50Hz, IOUT=0A 2.25A VOUT_MIN=18..8V VIN=264VAC/50Hz, IOUT=0A 2.25A VOUT_MIN=18.9V * Note: Output voltage is monitored at Dialog Semiconductor 22

23 13. Bulky Capacitor Discharging No Load, VIN_BULK=28V Full Load, VDC_BULK=29.6V *Note: CH1: IOUT, 1A/Div; CH2: VBULK, 20V/Div; CH3: VOUT, Dialog Semiconductor 23

24 14. Output Short Circuit VIN=90VAC, PIN_S/C=56mW VIN=264VAC, PIN_S/C=120mW *Note: CH1: IOUT, 5A/Div, CH3: VOUT, Dialog Semiconductor 24

25 15.1 Output Over Voltage Protection VIN=90VAC/60Hz No-load, VOUT_OVP=6.24V VIN=264VAC/60Hz No-load, VOUT_OVP=6.32V OVP OVP *Note: CH1: VSENSE, 1V/Div; CH2: VOUT, Dialog Semiconductor 25

26 15.2 Output Over Voltage Protection VIN=90VAC/60Hz No-load, VOUT_OVP=18.9V VIN=264VAC/60Hz No-load, VOUT_OVP=19V OVP OVP *Note: CH1: VSENSE, 2V/Div; CH2: VOUT, Dialog Semiconductor 26

15.3 Output Over Voltage Protection (@20V) VIN=90VAC/60Hz No-load, VOUT_OVP=24.

27 15.3 Output Over Voltage Protection VIN=90VAC/60Hz No-load, VOUT_OVP=24.8V VIN=264VAC/60Hz No-load, VOUT_OVP=24.8V OVP OVP *Note: CH1: VSENSE, 2V/Div; CH2: VOUT, Dialog Semiconductor 27

28 16.1 Thermal Test for Critical Component V IN =90V AC, V OUT =15V I OUT =3A V IN =264V AC, V OUT =15V I OUT =3A Item Temp.( ) Rising Temp.( ) Temp.( ) Rising Temp.( ) Bridge Diode(BD1, KBP308) PWM IC(U1, iw ) Vcc LDO(Q5, DMX1015E) Transformer(T1,Wire) Transformer(T1, Core) MOSFET(Q1,CS12N70) Input Bulk_Cap(CE1, 22uF/400V) MOSFET(Q51, BSC070N10NS5) Solid capacitior(ce52, 680uF/25V) Ambient(Chamber) Temp CE1 Q1 CE52 T1 1015E U1 BD1 Q51 * Note: The UUT is assembled with case and placed in a temperature Dialog Semiconductor 28

16.2 Thermal Test for Critical Component (@20V) V IN =90V AC, V OUT =20V I OUT =2.25A V IN =264V AC, V OUT =20V I OUT =2.25A Item Temp.( ) Rising Temp.( ) Temp.( ) Rising Temp.( ) Bridge Diode(BD1, KBP308) 113.

29 16.2 Thermal Test for Critical Component V IN =90V AC, V OUT =20V I OUT =2.25A V IN =264V AC, V OUT =20V I OUT =2.25A Item Temp.( ) Rising Temp.( ) Temp.( ) Rising Temp.( ) Bridge Diode(BD1, KBP308) PWM IC(U1, iw ) Vcc LDO(Q5, DMX1015E) Transformer(T1,Wire) Transformer(T1, Core) MOSFET(Q1,CS12N70) Input Bulk_Cap(CE1, 22uF/400V) MOSFET(Q51, BSC070N10NS5) Solid capacitior(ce52, 680uF/25V) Ambient(Chamber) Temp CE1 Q1 CE52 T1 1015E U1 BD1 Q51 * Note: The UUT is assembled with case and placed in a temperature Dialog Semiconductor 29

30 17.1 Conducted EMI VIN=230VAC/50Hz, Live VIN=230VAC/50Hz, Natural VIN=110VAC/60Hz, Live VIN=110VAC/60Hz, Natural *Note: Resistive & Full load; output is Dialog Semiconductor 30

31 17.2 Conducted EMI VIN=230VAC/50Hz, Live VIN=230VAC/50Hz, Natural VIN=110VAC/60Hz, Live VIN=110VAC/60Hz, Natural *Note: Resistive & Full load; output is connected to Dialog Semiconductor 31

32 17.3 Conducted EMI VIN=230VAC/50Hz, Live VIN=230VAC/50Hz, Natural VIN=110VAC/60Hz, Live VIN=110VAC/60Hz, Natural *Note: Resistive & Full load; output is Dialog Semiconductor 32

33 17.4 Conducted EMI VIN=230VAC/50Hz, Live VIN=230VAC/50Hz, Natural VIN=110VAC/60Hz, Live VIN=110VAC/60Hz, Natural *Note: Resistive & Full load; output is connected to Dialog Semiconductor 33

34 17.5 Conducted EMI VIN=230VAC/50Hz, Live VIN=230VAC/50Hz, Natural VIN=110VAC/60Hz, Live VIN=110VAC/60Hz, Natural *Note: Resistive & Full load; output is Dialog Semiconductor 34

35 17.6 Conducted EMI VIN=230VAC/50Hz, Live VIN=230VAC/50Hz, Natural VIN=110VAC/60Hz, Live VIN=110VAC/60Hz, Natural *Note: Resistive & Full load; output is connected to Dialog Semiconductor 35

36 18.1 Radiated EMI VIN=230VAC/50Hz, Vertical VIN=230VAC/50Hz, Horizontal VIN=110VAC/60Hz, Vertical VIN=110VAC/60Hz, Horizontal *Note: Resistive & Full load; output is Dialog Semiconductor 36

37 18.2 Radiated EMI VIN=230VAC/50Hz, Vertical VIN=230VAC/50Hz, Horizontal VIN=110VAC/60Hz, Vertical VIN=110VAC/60Hz, Horizontal *Note: Resistive & Full load; output is connected to Dialog Semiconductor 37

38 18.3 Radiated EMI VIN=230VAC/50Hz, Vertical VIN=230VAC/50Hz, Horizontal VIN=110VAC/60Hz, Vertical VIN=110VAC/60Hz, Horizontal *Note: Resistive & Full load; output is Dialog Semiconductor 38

39 18.4 Radiated EMI VIN=230VAC/50Hz, Vertical VIN=230VAC/50Hz, Horizontal VIN=110VAC/60Hz, Vertical VIN=110VAC/60Hz, Horizontal *Note: Resistive & Full load; output is connected to Dialog Semiconductor 39

40 18.5 Radiated EMI VIN=230VAC/50Hz, Vertical VIN=230VAC/50Hz, Horizontal VIN=110VAC/60Hz, Vertical VIN=110VAC/60Hz, Horizontal *Note: Resistive & Full load; output is Dialog Semiconductor 40

41 18.6 Radiated EMI VIN=230VAC/50Hz, Vertical VIN=230VAC/50Hz, Horizontal VIN=110VAC/60Hz, Vertical VIN=110VAC/60Hz, Horizontal *Note: Resistive & Full load; output is connected to Dialog Semiconductor 41

19. Maximum Drain Voltage of HV MOSFET (@20V) Test Condition(Full Load): VIN=264VAC, IOUT=2.

42 19. Maximum Drain Voltage of HV MOSFET Test Condition(Full Load): VIN=264VAC, IOUT=2.25A Result: VDS_MAX=628V Appendix Simple Specification for used MOSFET (CS12N70F A9H, Dialog Semiconductor 42

20. Maximum Drain Voltage of SR MOSFET (@20V) Test Condition: VIN=264VAC, IOUT=0A Result:

43 20. Maximum Drain Voltage of SR MOSFET Test Condition: VIN=264VAC, IOUT=0A Result: VDS_MAX=81.6V Appendix Simple Specification for used N-MOS Dialog Semiconductor 43

44 21. Transformer Flux Density (Np=33Ts, Lm=0.450mH, Ae=98mm 2 -RM10) CH1: IP,500mA/div I I P P B is monitored at 90Vac and 3A (full load ) 2270mA MAX L N PRI P I A P e ( Tesla) CH1: IP,500mA/div I I P P B is monitored at 90Vac and 2550mA MAX L N PRI P I A P e A (Max P OUT 0. 37( Tesla) Dialog Semiconductor 44

45 Disclaimer Disclaimer Information in this document is believed to be accurate and reliable. However, Dialog Semiconductor does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information. Dialog Semiconductor furthermore takes no responsibility whatsoever for the content in this document if provided by any information source outside of Dialog Semiconductor. Dialog Semiconductor reserves the right to change without notice the information published in this document, including without limitation the specification and the design of the related semiconductor products, software and applications. Applications, software, and semiconductor products described in this document are for illustrative purposes only. Dialog Semiconductor makes no representation or warranty that such applications, software and semiconductor products will be suitable for the specified use without further testing or modification. Unless otherwise agreed in writing, such testing or modification is the sole responsibility of the customer and Dialog Semiconductor excludes all liability in this respect. Customer notes that nothing in this document may be construed as a license for customer to use the Dialog Semiconductor products, software and applications referred to in this document. Such license must be separately sought by customer with Dialog Semiconductor. All use of Dialog Semiconductor products, software and applications referred to in this document are subject to Dialog Semiconductor s, Standard Terms and Conditions of Sale, unless otherwise stated. Evaluation Boards In addition to the above Disclaimer, Dialog Semiconductor provides this evaluation board under the following conditions: This evaluation board is provided for evaluation purposes only and is not intended for commercial use in any end product. Dialog Semiconductor expressly disclaims all warranties, express, implied or statutory, including (but not limited to) the implied warranties of non-infringement, suitability for a specific application(s) or end product(s), product quality or reliability. All risks and liability regarding quality, use or performance of this evaluation board are those of the customer/user and/or customer/user s employer. This evaluation board must be used in a test area/laboratory specifically designed and designated for working with, and evaluating high-voltage electrical devices. Only trained and qualified professional personnel with experience, knowledge and training in the use of high-voltage electrical circuits should use this evaluation board. Trained personnel must use required personal protective equipment and required laboratory equipment when working with the evaluation board. The user, and/or user s employer, if user is using this evaluation board for employer-related purposes: - Assumes all responsibility and liability for proper and safe handling of the evaluation boards and indemnifies Dialog Semiconductor from any and all claims arising from use of the evaluation board. - Assumes all responsibility for using this evaluation board in a test area or laboratory which is qualified and/or certified according to the local regulations, guidelines and labor laws applicable to working with non-isolated mains voltages and high voltage circuits - Understands that this evaluation board has not been agency tested or approved for safety, technical performance, and/or regulatory requirements, by any agency. This includes electromagnetic interference or other technical regulatory or safety testing and Dialog Semiconductor 45

46 The power to be... personal portable Dialog Semiconductor 46

Reference Design EBC iw1760b-00 for 15W Dual Output Home Appliance Switched Mode Power Supply Design

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