Reference Design EBC iw for 5V 1A Small-Size Adapter Design

Transcription

1 Reference Design EBC10003 iw for 5V 1A Small-Size Adapter Design

2 Table of Contents iw For Small-Size Adapter Design (AC Input V AC, Output 5V 1A) EBC Introduction Design Features Power Supply Design Specification Schematic PCB Layout Bill Of Materials Transformer drawing Performance Regulation, Ripple and Efficiency Measurement CV and CC Regulation Conducted EMI...8 Rev. 1.1 EBC10003 Page 2

3 1.0 Introduction This document provides a reference design for a universal input, 5V 1A isolated flyback power supply. For this design the iw is used. This document contains the complete specification of the power supply, a detailed circuit diagram, an entire bill of materials required to build the power supply, a drawing of the power transformer, and the test data of the most important performance. AC Input EEM12.4 DC Output Figure 1.1 PCB Top View 33.5mm 22mm iw (No Cable-Drop-Compensation) Figure 1.2 PCB Bottom View 2.0 Design Features AC input range V AC DC output 5V 1A Meet 30mW no-load standby power consumption requirement Meet EPA 2.0 requirement Meet USB 3.0 dynamic load response requirement Meet MoU requirement Rev. 1.1 EBC10003 Page 3

4 3.0 Power Supply Design Specification The information in the table below represents the minimum acceptable performance of the design. Description Symbol Min Typ Max Units Comment Input Voltage V IN V AC Frequency f LINE 47 50/60 63 Hz No-load input power (230V AC ) 30 mw Output Output voltage V OUT V Measured at end of output DC-Cable Output current I OUT 0 1 A Output ripple voltage V RIPPLE 80 mv P_P I OUT A = 25 C 20MHz bandwidth Measured at end of output DC-Cable Total Output Power Continuous output power P OUT 5 W Over-current protection I OUT_MAX 1.2 A Auto-restart Active mode protection η 68.2 % Environmental Conducted EMI Meets CISPR22B / EN55022B Safety Designed to meet IEC950, UL1950 Class II Ambient temperature T AMB 0 40 C Measured at end of output DC-Cable, V IN =115V AC and 230V AC (T AMB = 25 C) Rev. 1.1 EBC10003 Page 4

5 4.0 Schematic L AC Input F1 10 Ω / 1 W BD1 ABS8 L1 470 μh T1 EE12.4 D7 SCD34 5V N + C1 + C2 3.3 μf 6.8 μf R10 1 MΩ R5 470 kω C3 1 nf R3 330 Ω + C4 330 µf + C7 330 µf R kω L2 10 μh D6 SRGC10MH C9 470 pf GND Q2 DMZ6005 R4 3.3 Ω D5 SRGC10DH R1 15 kω U1 iw VCC 2 V SENSE OUTPUT GND 6 5 Q1 3DD4612DT R2 3.9 kω C8 10pF C6 4.7μF C5 0.1 μf 3 ASU I SENSE 4 R Ω Figure 4.1 Design Schematic 5.0 PCB Layout PCB Top PCB Bottom Figure 5.1 PCB Layout 33.5 mm x 22.0 mm Rev. 1.1 EBC10003 Page 5

6 6.0 Bill of Materials Item Qty. Ref. Description Manufacturer P/N Manufacturer 1 1 U1 iw , off-line digital PSR & PWM & VMS controller, SOT23-6 iw iwatt, Inc 2 1 C1 3.3μF, 400V, E-Cap, (Φ6.3mmx11.5mm) 2GUTWHS3R3M0E12 TOSHIN KOGYO Co. 3 1 C2 6.8μF, 400V, E-Cap, (Φ8mmx12mm) 2GUTWHS6R8M0G12 TOSHIN KOGYO Co. 4 1 C3 1nF, 250V, X7R, SMD-0805 C2012X7R2E102K TDK Coporation 5 2 C4, C7 330μF, 6.3V, solid-cap, (Φ5mmx9mm) ULR337M0JD09RR Man Yue Technology 6 1 C5 100nF, 50V, X7R, SMD-0603 C1608X7R1H104M TDK Coporation 7 1 C6 4.7μF, 25V, E-Cap, (Φ4mmx7mm) PKSH-025V4R7MB070 KOSHIN 8 1 C8 10pF, 50V, X7R, SMD C100KAT2A AVX Corporation 9 1 C9 470pF, 100V, X7R, SMD C471KAT2A AVX Corporation 10 1 R1 15KΩ, ±1 %, SMD-0603 RC0603FR-0715KL Yageo 11 1 R2 3.9KΩ, ±1 %, SMD-0603 RC0603FR-073K9L Yageo 12 1 R4 3.3Ω, ±5 %, SMD-0805 RC0805JR-073R3L Yageo 13 1 R5 470KΩ, ±5 %, SMD-0805 RC0805JR-07470KL Yageo 14 1 R6 330Ω, ±5 %, SMD-0805 RC0805JR-07330RL Yageo 15 1 R10 1MΩ, ±5 %, SMD-1206 RC1206JR-071ML Yageo 16 1 R14 3.9KΩ, ±5 %, SMD-0805 RC0805JR-073K9L Yageo 17 1 R Ω, ±1 %, SMD-0805 RC0805FR-072R26L Yageo 18 1 BR1 1A, 800V, bridge rectifier, ABS ABS8 Taiwan Semiconductor 19 1 D5 1A, 200V, fast recovery rectifier, 1206-S SRGC10DH ZOWIE 20 1 D6 1A, 1000V, fast recovery rectifier, 1206-S SRGC10MH ZOWIE 21 1 D7 3A, 40V, Schottky, SMA(DO-214AC) SCD34H ZOWIE 22 1 F1 10Ω, 1W, fusible resistor FRM1WJT-52-10R Yageo 23 1 L1 470μH, color ring inductor, F471J-RC JW Miller A Bourns 24 1 L2 10μH, 100mA, inductor, 0805 LQM21FN100M80L Murata Electronics 25 1 Q1 1.5A, 800V, NPN transistor, TO-92 3DD4612DT Sino-Microelectronics 26 1 Q2 12mA, 600V, depletion-mode power MOSFET, SOT23-3 DMZ6005 ARK Microelectronics 27 1 T1 EE12.4, transformer, vertical type Rev. 1.1 EBC10003 Page 6

7 7.0 Transformer drawing Schematic: 1 A Primary 1 156Ts 11Ts Secondary Bias Ts B Notes: Dot ( ) denotes electrical start. Electrical start could be different from mechanical or winding start. Electrical Specifications: 1. Primary inductance (Lp) = 1.23mH ± 2. Primary leakage inductance (Lk) < 5% * Lp 3. Electrical strength = 3KV, 50/60Hz, 1Min. Materials: 1. Core: EEM12.4 (ferrite material TDK PC40 or equivalent) 2. Bobbin: EEM12.4 vertical 3. Magnet wires (pri): type 2-UEW 4. Magnet wire (sec): triple insulated wires 5. Layer insulation tape : 3M1298 or equivalent Finished: 1. Varnish the complete assembly Rev. 1.1 EBC10003 Page 7

8 8.0 Performance 8.1 Regulation, Ripple and Efficiency Measurement * Note: Output voltage is measured at end of PCB Vin (V AC ) Pin (W) Vout (V) Iout (ma) VRIPPLE (mvp-p) Pout (W) η (%) OCP (A) Average η (%) CV and CC Regulation 8.3 Conducted EMI 6.0 VI Curve (Vin=90VAC/50Hz) Vin=230VAC/50Hz, Live 5.0 V OUT (V) V OUT (V) I OUT (ma) VI Curve (Vin=264VAC/50Hz) Amplitude(dBμV) Amplitude(dBμV) Frequency(MHz) Vin=230VAC/50Hz, Neutral I OUT (ma) Frequency(MHz) Rev. 1.1 EBC10003 Page 8

9 Trademark Information 2012 iwatt, Inc. All rights reserved. iwatt, BroadLED, EZ-EMI, Flickerless, Intelligent AC-DC and LED Power, and PrimAccurate are trademarks of iwatt, Inc. All other trademarks and registered trademarks are the property of their respective owners. Contact Information Web: Phone: +1 (408) Fax: +1 (408) iwatt Inc. 675 Campbell Technology Parkway, Suite 150 Campbell, CA Disclaimer iwatt reserves the right to make changes to its products and to discontinue products without notice. The applications information, schematic diagrams, and other reference information included herein is provided as a design aid only and are therefore provided as-is. iwatt makes no warranties with respect to this information and disclaims any implied warranties of merchantability or non-infringement of third-party intellectual property rights. iwatt cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an iwatt product. No circuit patent licenses are implied. Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage ( Critical Applications ). IWATT SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE SUPPORT APPLICATIONS, DEVICES OR SYSTEMS, OR OTHER CRITICAL APPLICATIONS. Inclusion of iwatt products in critical applications is understood to be fully at the risk of the customer. Questions concerning potential risk applications should be directed to iwatt, Inc. iwatt semiconductors are typically used in power supplies in which high voltages are present during operation. Highvoltage safety precautions should be observed in design and operation to minimize the chance of injury. Rev. 1.1 EBC10003 Page 9