PROCEEDINGS OF SPIE. Event: SPIE NanoScience + Engineering, 2012, San Diego, California, United States

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1 PROCEEDINGS OF SPIE SPIEDigitalLibrary.org/conference-proceedings-of-spie Front Matter: Volume 8467, "Front Matter: Volume 8467," Proc. SPIE 8467, Nanoepitaxy: Materials and Devices IV, (13 November 2012); doi: / Event: SPIE NanoScience + Engineering, 2012, San Diego, California, United States

2 PROCEEDINGS OF SPIE Nanoepitaxy: Materials and Devices IV Nobuhiko P. Kobayashi A. Alec Talin M. Saif Islam Editors August 2012 San Diego, California, United States Sponsored and Published by SPIE Volume 8467 Proceedings of SPIE X, V.8467 SPIE is an international society advancing an interdisciplinary approach to the science and application of light. Nanoepitaxy: Materials and Devices IV, edited by Nobuhiko P. Kobayashi, A. Alec Talin, M. Saif Islam, Proc. of SPIE Vol. 8467, SPIE CCC code: /12/$18 doi: / Proc. of SPIE Vol

3 The papers included in this volume were part of the technical conference cited on the cover and title page. Papers were selected and subject to review by the editors and conference program committee. Some conference presentations may not be available for publication. The papers published in these proceedings reflect the work and thoughts of the authors and are published herein as submitted. The publisher is not responsible for the validity of the information or for any outcomes resulting from reliance thereon. Please use the following format to cite material from this book: Author(s), "Title of Paper," in Nanoepitaxy: Materials and Devices IV, edited by Nobuhiko P. Kobayashi, A. Alec Talin, M. Saif Islam, Proceedings of SPIE Vol (SPIE, Bellingham, WA, 2012) Article CID Number. ISSN: X ISBN: Published by SPIE P.O. Box 10, Bellingham, Washington USA Telephone (Pacific Time) Fax SPIE.org Copyright 2012, Society of Photo-Optical Instrumentation Engineers. Copying of material in this book for internal or personal use, or for the internal or personal use of specific clients, beyond the fair use provisions granted by the U.S. Copyright Law is authorized by SPIE subject to payment of copying fees. The Transactional Reporting Service base fee for this volume is $18.00 per article (or portion thereof), which should be paid directly to the Copyright Clearance Center (CCC), 222 Rosewood Drive, Danvers, MA Payment may also be made electronically through CCC Online at copyright.com. Other copying for republication, resale, advertising or promotion, or any form of systematic or multiple reproduction of any material in this book is prohibited except with permission in writing from the publisher. The CCC fee code is X/12/$ Printed in the United States of America. Publication of record for individual papers is online in the SPIE Digital Library. SPIEDigitalLibrary.org Paper Numbering: Proceedings of SPIE follow an e-first publication model, with papers published first online and then in print and on CD-ROM. Papers are published as they are submitted and meet publication criteria. A unique, consistent, permanent citation identifier (CID) number is assigned to each article at the time of the first publication. Utilization of CIDs allows articles to be fully citable as soon as they are published online, and connects the same identifier to all online, print, and electronic versions of the publication. SPIE uses a six-digit CID article numbering system in which: The first four digits correspond to the SPIE volume number. The last two digits indicate publication order within the volume using a Base 36 numbering system employing both numerals and letters. These two-number sets start with 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B 0Z, followed by 10-1Z, 20-2Z, etc. The CID Number appears on each page of the manuscript. The complete citation is used on the first page, and an abbreviated version on subsequent pages. Numbers in the index correspond to the last two digits of the six-digit CID Number. Proc. of SPIE Vol

4 Contents vii Conference Committee NANOWIRES I Biofunctionalization of Si nanowires using a solution based technique [8467-1] E. H. Williams, National Institute of Standards and Technology and George Mason Univ. ; A. V. Davydov, V. P. Oleshko, N. J. Lin, K. L. Steffens, National Institute of Standards and Technology ; A. K. Manocchi, U.S. Army Research Lab. ; S. Krylyuk, National Institute of Standards and Technology (United States) and Univ. of Maryland, College Park ; M. V. Rao, J. A. Schreifels, George Mason Univ Light extraction in individual GaN nanowires on Si for LEDs (Invited Paper) [8467-2] J. Chesin, X. Zhou, S. Gradečak, Massachusetts Institute of Technology LOW-DIMENSIONAL DEVICES I C MOCVD growth of GaN nanopyramid and nanopillar LED with emission in green to orange color (Invited Paper) [ ] H.-C. Kuo, National Chiao Tung Univ. (Taiwan); Y.-J. Cheng, Academia Sinica (Taiwan) E Indium phosphide nanowire network: growth and characterization for thermoelectric conversion [ ] K. J. Norris, J. Zhang, D. Fryauf, Univ. of California, Santa Cruz and Nanostructured Energy Conversion Technology and Research ; A. Rugar, The Harker School ; A. Flores, Univ. of California, Santa Cruz and Nanostructured Energy Conversion Technology and Research ; T. J. Longson, Univ. of California, Santa Cruz ; A. J. Lohn, N. P. Kobayashi, Univ. of California, Santa Cruz and Nanostructured Energy Conversion Technology and Research ATOMIC LAYER DEPOSITION F Novel optical properties of Ag films deposited by plasma enhanced atomic layer deposition (PEALD) (Invited Paper) [ ] S. M. Prokes, O. J. Glembocki, E. Cleveland, U.S. Naval Research Lab. iii Proc. of SPIE Vol

5 8467 0H Plasma enhanced atomic layer deposition of silver thin films for applications in plasmonics and surface-enhanced Raman scattering [ ] E. R. Cleveland, U.S. Naval Research Lab. and American Society for Engineering Education ; O. Glembocki, S. M. Prokes, U.S. Naval Research Lab. NANOWIRES II J Enhanced field ionization current enabled by gold induced surface states to silicon nanowires [ ] H. Karaagac, M. S. Islam, Univ. of California, Davis L Graded nanowire ultraviolet LEDs by polarization engineering (Invited Paper) [ ] S. D. Carnevale, T. F. Kent, The Ohio State Univ. ; P. J. Phillips, Univ. of Illinois at Chicago ; A. T. M. G. Sarwar, The Ohio State Univ. ; R. F. Klie, Univ. of Illinois at Chicago ; S. Rajan, R. C. Myers, The Ohio State Univ. (United States) LOW-DIMENSIONAL MATERIALS II R Heterogeneous integration of epitaxial nanostructures: strategies and application drivers (Invited Paper) [ ] C. O. Chui, K.-S. Shin, J. Kina, K.-H. Shih, Univ. of California, Los Angeles ; P. Narayanan, C. A. Moritz, Univ. of Massachusetts, Amherst NANO CHARACTERIZATION U Study on indium phosphide nanowires grown by metal organic chemical vapor deposition and coated with aluminum oxides deposited by atomic layer deposition [ ] A. J. Lohn, Univ. of California, Santa Cruz and Nanostructured Energy Conversion Technology and Research ; N. Dawson, The Univ. of New Mexico ; R. Cormia, Foothill College ; D. Fryauf, J. Zhang, K. J. Norris, N. P. Kobayashi, Univ. of California, Santa Cruz and Nanostructured Energy Conversion Technology and Research LOW-DIMENSIONAL DEVICES II W High electron mobility AlGaN/AlN/GaN HEMT structure with a nano-scale AlN interlayer [ ] S.-C. Huang, W.-R. Chen, National Formosa Univ. (Taiwan); Y.-T. Hsu, National Chiao Tung Univ. (Taiwan); J.-C. Lin, K.-J. Chang, W.-J. Lin, Chung Shan Institute of Science and Technology (Taiwan) Y 3D silicon micro-pillars/-walls decorated with aluminum-zno/zno nanowires for optoelectronic device applications [ ] H. Karaagac, L. V. J., M. S. Islam, Univ. of California, Davis iv Proc. of SPIE Vol

6 8467 0Z Contact metal effects in indium phosphide nanowire transistor [ ] J. Han, NASA Ames Research Ctr. ; A. J. Lohn, Univ. of California, Santa Cruz and Nanostructured Energy Conversion Technology and Research (United States); M. Meyyappan, NASA Ames Research Ctr. ; N. P. Kobayashi, Univ. of California, Santa Cruz and Nanostructured Energy Conversion Technology and Research Author Index v Proc. of SPIE Vol

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8 Conference Committee Symposium Chairs David L. Andrews, University of East Anglia Norwich (United Kingdom) James G. Grote, Air Force Research Laboratory Symposium Cochairs Satoshi Kawata, Osaka University (Japan) Manijeh Razeghi, Northwestern University Conference Chairs Nobuhiko P. Kobayashi, University of California, Santa Cruz A. Alec Talin, National Institute of Standards and Technology M. Saif Islam, University of California, Davis Conference Program Committee Kristine A. Bertness, National Institute of Standards and Technology Albert Davydov, National Institute of Standards and Technology Shadi A. Dayeh, Los Alamos National Laboratory Supratik Guha, IBM Thomas J. Watson Research Center Jung Han, Yale University Chennupati Jagadish, The Australian National University (Australia) Mutsumi Kimura, Ryukoku University (Japan) Takhee Lee, Gwangju Institute of Science and Technology (Korea, Republic of) Marina S. Leite, California Institute of Technology Francois Leonard, Sandia National Laboratories, California Samuel S. Mao, Lawrence Berkeley National Laboratory Sanjay Mathur, Universität zu Köln (Germany) Samuel Tom Picraux, Los Alamos National Laboratory Sharka M. Prokes, U.S. Naval Research Laboratory Zhifeng Ren, Boston College Atsuhito Sawabe, Aoyama Gakuin University (Japan) Fred Semendy, U.S. Army Research Laboratory vii Proc. of SPIE Vol

9 Loucas Tsakalakos, GE Global Research Emanuel Tutuc, The University of Texas at Austin Lionel Vayssieres, National Institute for Materials Science (Japan) Deli Wang, University of California, San Diego George T. Wang, Sandia National Laboratories Session Chairs 1 Nanowires I Nobuhiko P. Kobayashi, University of California, Santa Cruz 2 Low-Dimensional Materials I Nobuhiko P. Kobayashi, University of California, Santa Cruz 3 Low-Dimensional Devices I Silvija Gradecak, Massachusetts Institute of Technology 4 Atomic Layer Deposition Albert Davydov, National Institute of Standards and Technology 5 Nanowires II Joan M. Redwing, The Pennsylvania State University 6 Low-Dimensional Materials II M. Saif Islam, University of California, Davis 7 Nano Characterization Sharka M. Prokes, U.S. Naval Research Laboratory 8 Low-Dimensional Devices II Nobuhiko P. Kobayashi, University of California, Santa Cruz viii Proc. of SPIE Vol