Activity for the IBL and SLHC upgrade

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1 Activity for the IBL and SLHC upgrade 400 Collisions (10 35 cm -2 s -1 ) on behalf of the LPNHE Atlas Silicon R&D group

2 The ATLAS roadmap in the LHC upgrade 5 to 15 fb -1 by 2013 Up to 100 fb -1 by 2017 Up to 300 fb -1 by fb -1 /year Up to O (1000)fb -1 IBL New Pixel detector New Inner Detector 1

3 ATLAS pixel detector upgrade Two different timescales: IBL / tracker upgrade Status: TDR for IBL ready choice of technology (planar vs 3D) this summer Goals: LOI for SLHC 1 year ready in 2013: IBL (5 -> 3.4cm) designed for 3x10 34 O(500 fb-1) 2-3x10 15 n/cm 2 O(2020+): SLHC Many French Institutions involved CPPM, LAL, LAPP, LPNHE 2

4 Persons involved at LPNHE T.Beau (MdC, P7) M. Bomben (CDD-HN -> Nov11, req. renewal) G.Calderini (DR2 CNRS) JCh J.Chauveau (PR, P6) G.Marchiori (CR2 CNRS) P.Schwemling (PR, P7) D.Laporte O.Le Dortz J.F.Genat Y.Orain (IE, CNRS) (IR, CNRS) (IR, CNRS) (AI, CNRS) Funding / support obtained from: ATLAS and laboratory y( (IN2P3) EUDET and AIDA EU projects Emergence (UPMC Project) 3

5 R&D activities Sensors - Device Simulations - Sensor Production - Characterization - SIMS and RBS activities - Irradiations - Testbeam evaluation FE electronics - Development of 3D OmegaPix prototype chip -Memdynchip - On-beam characterization - USBPix teststand Edgeless sensors Mechanics - Active edge at FBK - Thermal simulations - Thermal characterization -Mechanical design -Material budget 4

High luminosity consequences Instantaneous dose -

higher granularity sensor SEU-robust chip Integrated t

reduced charge collection rad-hard components fluence

6 High luminosity consequences Instantaneous dose - pileup and high event rate - increased occupancy higher granularity sensor SEU-robust chip Integrated t dose - leakage current - change in operation voltage - reduced charge collection rad-hard components fluence for the innermost pixel layer: 1-2 x n eq /cm 2 (3 ab -1 )

7 Sensors (1): device simulation Big work on planar pixel sensors, to improve the sensor layout and performance To minimize i i shingling we must increase the active fraction of planar pixel detectors -> Attempt to optimize the guard ring area by comparing different designs To maintain performance after radiation and limit the material budget we try to achieve reduced thickness -> Study of charge collection efficiency and pixel capacitance Options considered n-in-n n (conservative technology, similar to the present ATLAS detector) and n-in-p devices 6

8 Different detector configurations studied Simulation of layouts with 16,17,9 GRs at different spacing and distances from the implant GRs To increase active area, pixels moved under the GR (normally dead region) 7

9 Different designs: Conservative: standard Aggressive: long gpixels completely under the GRs Need to have edge cut as close as possible to pixels Some test detectors drawn to have cutline at different distance from the active area 8

Electrical field distribution analyzed at

sizes of 50x400 um and 50x250 um were considered

10 Electrical field distribution analyzed at different doses for different sensor layouts to study the breakdown voltage Undepleted region Field increase Pixel capacitance simulations Pixel sizes of 50x400 um and 50x250 um were considered Same baseline parameters (geometry and doping profiles) analysed 9

11 Sensor (2): production Planar Pixel Sensors for a test production commissioned to several foundries based on simulations, both for n-in-p and n-in-n process FEI3 1 FEI3 2 FE-I4 1 FEI3 FE-I4 10

12 Tuning of simulation parameters with measurements on test structures SIMS: Secondary Ion Mass Spectroscopy dune by us at FBK RBS: Rutherford Backscattering at SAFIR (Campus Jussieu) Cameca SC-Ultra at FBK Measurement windows Crater excavated by Safir at INSP on production wafer beam scan 11

13 n-in-n devices pixel implant mod p-spray nomod p-spray somehow lower concentration with respect to expectations n+: peak: 2e19 cm-3 down to 1e16 cm-3 ~900nm p+: 2e19 cm-3 1e16 cm-3 ~1200nm mod-p: 1e17 cm-3 1e15 cm-3 ~400nm nomod-p: 6e16 cm-3 1e15 cm-3 ~600nm back contact Results plugged into simulation 12

comprehension of Silvaco models and of the most critical features in the building of

14 Comparison with simulation Effort to improve the agreement between the Silvaco simulations and the unirradiated/irradiated n-in-p and n-in-n devices Now better comprehension of Silvaco models and of the most critical features in the building of the device July irradiation at CERN will be devoted d to systematic ti studies and comparisons 13

15 IV characterization for irradiated devices After 5x10^14 and 1x10^1510^15 n_eq irradiation Neutron irradiation in Ljubljana Proton irradiation at CERN Irradiation program with steps of 3x10^1414 n_eq 14

16 CiS batch 200um FEI4-like measurements Requirements: Vdepl < 30V Vbd > Vdepl + 30V CiS FE-I4 200um thick sensors Yield: 38/40 single-chip sensors Yield: 18/20 multi-chip sensors Measurements after UBM 15

17 n-in-n technology chosen for IBL 5 different thickness Detailed studies of Charge collection Charge amplification Chosen as a reasonable risk vs benefits optimization thickness wafers ordered wafers received 250um um um um um 6 8

18 Additional long-term sensor development FBK(Trento)/LPNHE collaboration for active-edge detectors t Deep trench diffusion (to prevent electrical field on the damaged cut) Cut line Uniformity of trench filling is critical. Prototypes production under way, good results

- ~14 weeks after design completed - production already

19 Preliminary trenched diodes produced with good results Production for LPNHE wafers - back support (Sintef) - ~14 weeks after design completed - production already funded thanks to a collaboration with INFN and Regione Trentino 18

20 Sensors (3): testbeams After bumpbonding to chips, several testbeams organized to characterize the performance of non-irradiated and irradiated modules. Qualification of PPS and 3D sensors We contributed to four test-beams at CERN and DESY in the last 12 months (shift and data analysis) assemblies in the EUDET telescope G.Calderini PAF Annecy

21 TIPP 2011, Chicago

22 TIPP 2011, Chicago

Electronics 3D/Vertical Integration R&D (LAL, LPNHE, CPPM) Tezzaron/Chartered

metal available, - Vias 16 1.6x1.6 16x10um, pitch h32 3.

4 um - Wafer bonding at 375 deg C Significant support from IN2P3, ANR, AIDA

with small pixel size 50x50 um, matrix of 24 columns x 64 rows Goals: low

23 Electronics 3D/Vertical Integration R&D (LAL, LPNHE, CPPM) Tezzaron/Chartered 130 nm - Deep N-well,MiM capacitors 1 ff/um 2 Single poly, 6 (8) levels of metal available, - Vias x1.6 16x10um, pitch h um - Bond points Cu 1.7x1.7 um, pitch 2.4 um - Wafer bonding at 375 deg C Significant support from IN2P3, ANR, AIDA OmegaPix and MemDyn chips (LAL, LPNHE) Exploratory OmegaPix chip (LAL, LPNHE) with small pixel size 50x50 um, matrix of 24 columns x 64 rows Goals: low threshold (1000 e), low noise 100 e) low consumption (3 uw/pixel) Reduced power voltage (1.2 V analog, 1.0 digital), feedback by parasitic capacitance 22

24 The prototype chip for the circular memory buffer (MemDyn) will be tested on beam at CERN in July to evaluate the radiation hardness TOP Fastening to shuttle BOTTOM Card for chip data acquisition during beam irradiation under construction (LPNHE) 23

25 Mechanics Present system is very heavy in terms of material budget. Critical need to study solutions to provide power, cooling and mechanical infrastructure with low material Punctual solutions for special mechanical problems Example: problems imposed by IBL stay-clear constraints 24

26 Task force to evaluate and trim the IBL material budget Effort for precise evaluation of material X/X0 from CAD drawings 25

27 Ibeams staves Distance Xo Blue : Carbon foam (X0=2130 mm) Green : Face sheet +I shaped structural beam (X0=224 mm) Red : cooling pipe (Al, X0=88.97 mm) Black : cooling fluid (C3F8, X0= mm) 31/03/

28 Simulations of different cooling configurations and pipe/support materials for FEA disks Case 1 Simulation of a single stave and comparison with measurements on the thermal bench 27

29 Conclusions The ATLAS LPNHE group involved in the effort for the upgrade with a lot of activities Big effort by the group and the laboratory in the last few years to improve our infrastructure Manpower issue: the only person full-time on the activity is not permanent (-> Nov 2011!!!) Renewal absolutely critical for our activities The calendar between now and 2013 is already very tight and dense. Time flows fast! Move quickly! 28

30 Backup

32 Addition of radiation damage Introduction ti of bulk damage corresponding to several doses Three-level model, donor removal See also D.Passeri, P.Ciampolini, G.Bilei, F.Moscatelli, IEEE TNS 48 (2001)1688 Introduction of surface damage Oxide charge: 1e11/cm2 2e12/cm2

33 Example: C vs sensor thickness Cback scales as 1/W C1 (1 st neighbors) decreases Ctot is O(100fF) ff 100 Ctot 80 C1 W (μm) Cb (ff) C1 (ff) Cback um 11

34 Capacitances and depletion voltage

36 Simulated guard ring potential distribution as function of the process parameters (in this case: p-spray p conc.) pspray dose= 1e E E E pspray dose= 1e E E E+16 GR1 GR2 GR3 GR4 GR5 GR6 GR7 GR8 GR9 GR1 GR2 GR3 GR4 GR5 GR6 GR7 GR8 GR9 700 pspray dose= 3.16e G R E E E pspray dose= 3.16e E E E+16 GR1 GR2 GR3 GR4 GR5 GR6 GR7 GR8 G R 1 2 G R 3 G R 4 9

A new strips tracker for the upgraded ATLAS ITk detector

A new strips tracker for the upgraded ATLAS ITk detector, on behalf of the ATLAS Collaboration : 11th International Conference on Position Sensitive Detectors 3-7 The Open University, Milton Keynes, UK.