RFFM8216TR7-5K. 2.4 GHz Integrated Wi-Fi Front-End Module
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- Augusta Parsons
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1 RFFM GHz Integrated Wi-Fi Front-End Module Product Overview The RFFM8216 provides a complete integrated solution in a single front end module (FEM) for WiFi b/g/n/ac systems.performance is focused on a balance of efficiency to enable long battery life and linear power that increases the range of connection. It is specifically designed to work with the RFFM8516 to greatly reduce BOM cost in dual band applications. The RFFM8216 integrates a 2.4GHz power amplifier (PA), single pole triple throw switch (SP3T), LNA with bypass + BT/Rx switch (SP2T), harmonic filtering, a diversity switch (SP2T) and a power detector coupler for improved accuracy. Functional Block Diagram Top View Key Features 16 Pin 2.3 x 2.3 mm QFN Package POUT = 20dBm, n 20MHz 2.2% (-33dB) Dynamic EVM High efficiency Input and Output matched to 50 ohms Integrated 2.4GHz PA, SP3T, LNA with Bypass, 2xSPDT and PDET Integrated Power Detector High Impedance PA Enable Applications IEEE b/g/n/ac WLAN Applications Single-Placement RF Front-End Module Single-band and Dual-band Wireless LAN Systems Portable Battery-Powered Equipment Ordering Information PART NUMBER RFFM8216SB RFFM8216SQ RFFM8216SR RFFM8216TR7 RFFM8216TR7-5K RFF8216PCK-410 DESCRIPTION 5 piece sample bag 25 piece sample bag 7 Reel with 100 pieces 7 Reel with 2500 pieces 7 Reel with 5000 pieces Full assembled Evaluation Board w/ 5-piece bag DATA SHEET RFFM8216 Subject to change without notice 1 of 11
2 RFFM GHz Wi-Fi Integrated Front-End Module Absolute Maximum Ratings PARAMETER CONDITIONS RATING Storage Temperature -40 to 150 C DC Supply Voltage No RF Applied 0.5 to +6.0 V PA Enable Voltage 0.5 to +5.0 V DC Supply Current 800mA RF Maximum Input Power (TX Mode) CW, 50Ω, VCC = 3.6 V, T = 25ºC +12 dbm RF Maximum Input Power (RX LNA Mode) CW, 50Ω, VCC = 3.6 V, T = 25ºC 0 dbm RF Maximum Input Power (RX BYPASS Mode) CW, 50Ω, VCC = 3.6 V, T = 25ºC +30 dbm Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions PARAMETER CONDITIONS MIN. TYP. MAX. UNITS Operating Temperature o C Extended Operating Temperature Functional with reduced performance o C Operating Voltage VCC V Extended Operating Voltage VCC Functional with reduced performance V Control Voltage (V-High) PAEN Vcc V Control Voltage (V-High) LNAEN Vcc V Control Voltage (V-Low) PAEN2 / LNAEN V Control Current (I-High) PAEN ua Control Current (I-High) LNAEN ua Control Current (I-Low) PAEN2 / LNAEN ua Leakage/Sleep/Bypass Mode Current PAEN2/ LNAEN2 = LOW VCC = 4.2 V ua Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. DATA SHEET RFFM8216 Subject to change without notice 2 of 11
3 Logic Truth Table SINGLE BAND CONFIGURATION MODE PAEN2 LNAEN2 2.4 GHz TX Mode High Low 2.4 GHz RX LNA Mode Low High 2.4 GHz RX Bypass (Sleep) Low Low RFSW Low High/Low DUAL BAND CONFIGURATION 5 GHz FEM 2 GHz FEM MODE PAEN5 LNAEN5 SWCTL5 PAEN2 LNAEN2 5 GHz TX Mode High Low High Low Low 5 GHz RX LNA Mode Low High Low Low Low 5 GHz Sleep/Bypass Low Low Low Low Low 2.4 GHz TX Mode N/A N/A N/A High Low 2.4 GHz RX LNA Mode N/A N/A N/A Low High 2.4 GHz RX Bypass (Sleep) N/A N/A N/A Low Low RFSW N/A N/A N/A Low High/Low DATA SHEET RFFM8216 Subject to change without notice 3 of 11
4 Electrical Specifications Transmit (V CC = 3.6 V; Temp=25 C; unless noted otherwise) PARAMETER CONDITIONS MIN. TYP. MAX. UNITS Operating Frequency MHz Small Signal Gain db Gain flatness For any 20 MHz bandwidth db Gain flatness For entire frequency band db 11g 54 Mbps MCS7 20 MHz MCS8 20 MHz Margin to Spectrum Emission Mask 11b 1 Mbps Margin to Spectrum Emission Mask 11g 6 Mbps Margin to Spectrum Emission Mask 11n, MCS0 HT20 Output Power dbm DEVM db Output Power dbm DEVM db Output Power dbm DEVM db Pout = 24.0 dbm db Pout = 22.0 dbm db Pout = 22.0 dbm db Current 11b, 1 Mbps Pout = 24.0 dbm ma Current 11n, MCS7 HT20 Pout = 20.0 dbm ma Return Loss RFIN Port db Return Loss ANT Port db Harmonics (2f0) b 1Mbps; Pout = 22.0 dbm dbm/mhz Harmonics (3f0) b 1Mbps; Pout = 22.0 dbm dbm/mhz Power Detector Voltage Pout = 5.0 dbm V Pout = 24.0 dbm V PA Switching Speed ns ANT to RX Isolation (TX Mode) db Electrical Specifications RFSW (RFIN-RFSW) (V CC = 3.6 V; Temp=25 C; unless noted otherwise) PARAMETER CONDITIONS MIN. TYP. MAX. UNITS Operating Frequency MHz Insertion Loss 2.4 GHz to 6 GHz db RFIN Port Return Loss db RFSW Port Return Loss db Input P0.1dB dbm DATA SHEET RFFM8216 Subject to change without notice 4 of 11
5 Electrical Specifications Receive (V CC = 3.6 V; Temp=25 C; unless noted otherwise) PARAMETER CONDITIONS MIN. TYP. MAX. UNITS Operating Frequency MHz Gain db Gain flatness Over entire Frequency band db Noise Figure db Current ma Input P1dB dbm Return Loss RX Port db Return Loss ANT Port db LNA Switching Speed ns Electrical Specifications RX Bypass (V CC = 3.6 V; Temp=25 C; unless noted otherwise) PARAMETER CONDITIONS MIN. TYP. MAX. UNITS Operating Frequency MHz Insertion Loss db Return Loss RX Port db Return Loss ANT Port db Input P0.1dB dbm DATA SHEET RFFM8216 Subject to change without notice 5 of 11
6 Application Circuit Schematic Bill of Materials REF. DES. QTY DESCRIPTION MANUF. PART NUMBER PCB 1 PCB, FM8216 Performance Micro International RFFM (B) C3 1 CAP, 4.7uF, +80/-20%, 10V, Y5V, 0805 Taiyo Yuden CE LMK212 F475ZG-T C4 1 Cap, 0.1uF, 10%, 6.3V, X5R, 0201 Murata Electronics GRM033R60J104KE19D C2 1 CAP, 1000pF, 10%, 25V, X7R, 0201 Samsung CL03B102KA3NNNC C1, C5, C6 3 CAP, 10pF, +/-0.5pF, 25V, C0G, 0201 Taiyo Yuden RM TMK063CG100DT-F L1 1 IND, 6.8nH, 5%, M/L, 0201 Taiyo Yuden LG HK06036N8J R1 1 RES, 3.9K, 5%, 1/20W, 0201 Kamaya RMC1/20-392JPA15 J1, J2, J3, J4 4 CONN, SMA, EL FLT VIPER, MAT Amphenol RF Asia Corp P1, P2 2 CONN, HDR, ST, PLRZD, 3-PIN, 0.100" ITW Pancon MPSS100-3-C DATA SHEET RFFM8216 Subject to change without notice 6 of 11
7 Pin Configuration and Description PIN NUMBER LABEL DESCRIPTION Top View 1 LNAEN2 Logic Control voltage 2. See truth table for proper voltage settings. 2,9,10 VCC DC Power Supply Voltage 3 NC No Connection 4 RX 5 RFIN 7 RFSW 12 PDET RF output port for the b/g/n/ac LNA. This port is matched to 50Ω and DC blocked internally. RF input port for the diversity switch. This port is matched to 50Ω. An external DC block is required. RF output port for the 5GHz front end module. This port is matched to 50Ω. An external DC block is required. Power Detector output. May need external series R/shunt C to adjust voltage level and to filter RF noise. 14 ANT RF bidirectional antenna port matched to 50Ω. An external DC block is required. 16 PAEN2 Logic Control voltage 1. See truth table for proper voltage settings. 6, 8, 11, 13, 15 GND RF and DC Ground Backside Pad GND Ground connection. The back side of the package should be connected to the ground plan though as short of a connection as possible. PCB vias under the device are required. DATA SHEET RFFM8216 Subject to change without notice 7 of 11
8 Timing Diagram RFFM8216 Transmit Mode RF/DC Power ON/OFF Sequence VCC VCC ON LNAEN2 RX Signal LNAEN2 logic state LOW during TX mode RX OFF PAEN2 TX Signal TX ON 0.2us TIME 0.2us Note: Observe the timing sequence shown in the diagram above and described below. DC, RF, and ON/OFF Time signal levels per datasheet specifications. Apply VCC prior to turning PA enable ON Turn PA enable ON prior to applying RF signal Turn RF signal OFF prior to turning PA enable OFF Turn PA enable OFF prior to turning VCC OFF TX/RX simultaneous transition is allowed DATA SHEET RFFM8216 Subject to change without notice 8 of 11
9 Package Outline Drawing Package Marking and Dimensions Marking: Part number RFFM8216 Trace code XXXX Notes: 1. All dimensions are in microns. Angles are in degrees. 2. Dimension and tolerance formats conform to ASME Y14.4M The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012. DATA SHEET RFFM8216 Subject to change without notice 9 of 11
10 Recommended PCB Patterns RECOMMENDED LAND PATTERN RECOMMENDED SOLDER MASK PATTERN DATA SHEET RFFM8216 Subject to change without notice 10 of 11
11 Handling Precautions PARAMETER RATING STANDARD Caution! ESD Human Body Model (HBM) Class 1C ESD/JEDEC JS ESD Charged Device Model (CDM) Class C3 JESD22-C101 ESD sensitive device Solderability Compatible with both lead-free (260 C max. reflow temperature) and tin/lead (245 C max. reflow temperature) soldering processes. Package lead plating: NiPdAu RoHS Compliance This part is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. Lead free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free Pb SVHC Free DATA SHEET RFFM8216 Subject to change without notice 11 of 11
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RFPA3805TR13. GaAs HBT 2-Stage Power Amplifier 700MHz to 2700MHz
GaAs HBT 2-Stage Power Amplifier 700MHz to 2700MHz RFMD s RFPA3805 is a GaAs HBT linear power amplifier specifically designed for Wireless Infrastructure applications. Using a highly reliable GaAs HBT
TGM2635-CP X-Band 100 W GaN Power Amplifier
Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
TAT Ω phemt Adjustable Gain RF Amplifier
Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block Product Features Gain, return loss and bias externally
CMOS 5GHz WLAN ac RFeIC WITH PA, LNA AND SPDT
CMOS 5GHz WLAN 802.11ac RFeIC WITH PA, LNA AND SPDT RX LEN 16 RXEN ANT 15 14 13 12 11 Description RFX8051 is a highly integrated, single-chip, single-die RFeIC (RF Front-end Integrated Circuit) which incorporates
QPC GHz 50 W GaN SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
.15 2.8 GHz 5 W GaN SPDT Switch Product Overview Qorvo s is a Single-Pole, Double Throw (SPDT) switch fabricated on Qorvo s QGaN25.25um GaN on SiC production process. Operating from.15 to 2.8 GHz, the
LNA In. Input Match. LNA Vref. LNA Sel. RX Switch. TX Switch GND. PA Vcc2 GND GND. PA Out. Product Description. GaAs HBT GaAs MESFET InGaP HBT
3.0V to 4.2V, ISM Band Transmit/Receive Module with Diversity Transfer Switch RFFM6904 3.0V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH Package: LGA, 32-pin, 8mm x 8mm x 1.2mm
QPA W, 28 V, GHz GaN PA Module
Product Description The QPA2705 is an integrated 2-stage Power Amplifier Module designed for Metro Cell Base Station applications with 5 W RMS at the device output. The module is 50 Ω input and output
TQP PCB. DC-6 GHz Gain Block. Applications. Ordering Information
Applications Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features Cascadable Gain Block DC 6000 MHz 19.1 db Gain @ 1.9 GHz 4.7 db Noise Figure @ 1.9 GHz
QPA GHz GaAs Low Noise Amplifier
General Description Qorvo s QPA9 is a packaged, high-performance, low noise amplifier fabricated on Qorvo s production 9 nm phemt (QPHT9) process. Covering 7 GHz, the QPA9 provides db small signal gain
QPM GHz Limiter/Low-Noise Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.
QPM1 Product Description The Qorvo QPM1 is an integrated limiter/lna providing robust, high performance over the 2 2GHz frequency range. The QPM1 delivers 17 db small signal gain with gain control and
TQM8M GHz Digital Variable Gain Amplifier
Applications Wireless Infrastructure Fixed Wireless Microwave and Satellite Radio IF and RF Applications General Purpose Wireless Product Features Integrates DSA + Amp Functionality 50 4000 MHz Broadband
TGA2594-HM GHz GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information
TGA94-HM Product Description Qorvo s TGA94-HM is a packaged power amplifier fabricated on Qorvo s. um GaN on SiC process (QGaN). Operating from 27 to 31 GHz, the TGA94- HM achieves 36.5 dbm saturated output
RF V, 2.4GHz TO 2.7GHz HIGH POWER AMPLIFIER
5.0V, 2.4GHz to 2.7GHz High Power Amplifier RF5652 5.0V, 2.4GHz TO 2.7GHz HIGH POWER AMPLIFIER Package: QFN, 32-Pin, 5mmx5mmx0.85mm 32 31 30 29 28 27 26 VBIAS VCC1 VCC2 25 1 24 Features High Gain = 34dB
TAT Ω 5V MHz RF Amplifier
TAT74 Datasheet: Rev D 04-17-17-1 of 8 - Disclaimer: Subject to change without notice TAT74 Absolute Maximum Ratings Parameter Rating Storage Temperature - to 1 C Device Voltage (VDD) +10 V Operation of
QPA W, 28 V, GHz GaN PA Module
Product Description The QPA3503 is an integrated 2-stage Power Amplifier Module designed for massive MIMO applications with 3 W RMS at the device output covering frequency range from 3.4 to 3.6 GHz. The
TGA4535-SM-T/R. K-Band Power Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.
TGA4-SM Product Description The TriQuint TGA4-SM is a with integrated power detector. The TGA4-SM operates from 21.2 23.6 GHz and is designed using TriQuint s power phemt production process. The TGA4-SM
TQP DC-6 GHz Gain Block
Applications Mobile Infrastructure LTE / WCDMA / CDMA / EDGE CATV Point to Point General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram DC-6000 MHz 15.4 db Gain @ 1.9 GHz 4 3.6
RFX8425: 2.4 GHz CMOS WLAN/Bluetooth Dual-Mode RFeIC with PA, LNA, and SP3T
DATA SHEET RFX8425: 2.4 GHz CMOS WLAN/Bluetooth Dual-Mode RFeIC with PA, LNA, and SP3T Applications Smartphones, feature phones. and MIDs with WLAN/Bluetooth WLAN/Bluetooth platforms requiring shared antenna
RFGA0024. InGaP HBT. 1000MHz. Product Description. Ordering Information
InGaP HBT MMIC Amplifier 5MHz TO 1MHz RFGA24 InGaP HBT MMIC Amplifier 5MHz TO 1MHz Package: SOT-89 Features Low Cost Broadband Gain Internally Matched Internal Active Bias No Dropping Resistor Single Supply
TQM GHz ¼ W Digital Variable Gain Amplifier
Applications 3G / 4G Wireless Infrastructure CDMA, WCDMA, LTE Repeaters ISM Infrastructure Product Features 28-pin 6x6 mm leadless SMT package Functional Block Diagram 0.6-1.0 GHz Frequency Range 31.5
AH323-G. 2W High Linearity 5V 2-Stage Amplifier. Applications. Product Features. Functional Block Diagram. General Description.
Applications Base stations / Repeaters High Power Amplifiers 2G / 3G / 4G Wireless Infrastructure Femtocells LTE / WCDMA / CDMA 20 Pin 5x5 mm QFN Package Product Features Functional Block Diagram 700-2700
GND GND RFN BALUN RFP GND. Product Description. Ordering Information. Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT
RFFM0.0V TO.V,.GHZ FRONT END MODULE Package Style: Laminate, -Pin, mm x mm x mm C_RX_TX VCCLNA N/C ANTSEL 0 9 CE 8 Features Tx Output Power=dBm Integrated RF Front End Module with Balun, PA, filter, LNA
TGM2635-CP X-Band 100 W GaN Power Amplifier
Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
TQP7M Watt High Linearity Amplifier. General Description. Product Features. Functional Block Diagram. Applications. Ordering Information
General Description The is a high linearity driver amplifier in industry standard, RoHS compliant, QFN surface mount package. This InGaP / GaAs HBT delivers high performance across 6 27 MHz range of frequencies
TQP7M W High Linearity Amplifier. Applications. Ordering Information. Part No. Description
Applications Repeaters Mobile Infrastructure CDMA / WCDMA / LTE General Purpose Wireless Product Features 3-pin SOT-89 Package Functional Block Diagram 4-4 MHz +27.5 dbm P1dB +44 dbm Output IP3 GND 4 17.8
TQP4M9071 High Linearity 6-Bit, 31.5 db Digital Step Attenuator
Applications Mobile Infrastructure LTE / WCDMA / CDMA / EDGE Test Equipments and Sensors IF and Applications General Purpose Wireless 24-pin 4x4mm leadless QFN package Product Features Functional Block
RFIN 2 GND. Product Description. Ordering Information. GaAs HBT GaAs MESFET. InGaP HBT
InGaP HBT Low Power Linear Amplifier RFGA212 InGaP HBT LOW POWER LINEAR AMPLIFIER Package: DFN, -Pin, 2mmx2mm Features High OIP3=35dBm at 196MHz 1 VBIAS Low DC Power: 3.3V, 23mA Low NF = 1.6dB at 196MHz
CMOS 5GHz WLAN a/n/ac RFeIC WITH PA, LNA, AND SPDT
CMOS 5GHz WLAN 802.11a/n/ac RFeIC WITH PA, LNA, AND SPDT Description RX 1 2 LNA_EN 16 ANT 15 14 13 12 11 RFX8055 is a highly integrated, single-chip, single-die RFeIC (RF Front-end Integrated Circuit)
TQM679002A Data Sheet
Block Diagram Rxp Rxn PABC PAEN Tx in Pdetect BTH Balun Product Description PA Directional Detector BTSW RXSW TXSW ANT The TQM679002A is full WLAN/BT front-end module in an ultra small 3mm x 3mm footprint
TQP3M9037 Ultra Low-Noise, High Linearity LNA
TQP3M937 General Description The TQP3M937 is a high-linearity, ultra-low noise gain block amplifier in a small x mm surface-mount package. At 1.95 GHz, the amplifier typically provides db gain, +35 dbm
RFFM3482Q 2.4GHz to 2.5GHz, Automotive WiFi Front End Module
2.4GHz to 2.5GHz, Automotive WiFi Front End Module Package Style: QFN, 16-pin, 3mm x 3mm x 0.45mm RXBN RXBP GND ANT 16 15 14 13 Features Single Voltage Supply 3.3V to 4.2V Integrated 2.5GHz b/g/n Amplifier,
TGS2355 SM EVB GHz 100 Watt GaN Switch. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information
Product Overview Qorvo s TGS2355 SM is a Single-Pole, Double Throw (SPDT) reflective switch fabricated on Qorvo s QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2355 SM