Performance Analysis of Narrowband and Wideband LNA s for Bluetooth and IR-UWB

Transcription

1 IJSRD International Journal for Scientific Research & Development Vol., Issue 03, 014 ISSN (online): Performance Analysis of Narrowband and Wideband s for Bluetooth and IRUWB Abhishek Kumar Singh 1 Mr. Sampath Kumar 1 P. G. Student Associate Professor 1, Electronics Engineering Department 1, JSS Academy of Technical Education, Noida, (U.P.) India Abstract is the first element of building blocks of any Wireless receiver. It amplifies the upcoming signal without adding much noise and distortion. In this paper, design and analysis of four different (Low noise amplifier) is presented using Agilent CMOS14.5μm and.4μm process. Here, CS degeneration, Current Mirror, Cascade, Cascade and Feedback technique are used for design. The performance evaluation is carried out for first three Narrowband having frequency band.45 GHz to.85ghz for Bluetooth application and fourth having frequency band 3.1 GHz to 10.6 GHz for IRUWB receiver application i.e. Wideband. The simulation is done on software ADS010. The analysis results the best gain S1 between first three is 1.10dB, input reflection coefficient S11 is 3.71dB, output reflection coefficient S is 9.10dB and noise figure is.03db with.5v supply are unconditionally stable with stability factor 7.11at.85GHz. The fourth having gain of 4dB, S11 is 15.5dB, S is 10.64dB and noise figure is.6db with.5v supply is unconditionally stable with stability factor 7.11at.85GHz. Keywords: Low noise amplifier ().Common source(c S), Impulse Radio Ultra Wide Band (IRUW, Advanced Design System (ADS) I. INTRODUCTION Any receiver performance is highly depends on the, because it is the first building block of any wireless receiver to amplify the upcoming signal from the antenna without adding much noise and distortion. The design of has many challenges; such as to obtain high Gain, Low noise figure and Linearity requirement at required operating frequency band. Besides all these DC power consumption should be as low as possible. However, it is very difficult to meet the demand of all requirements simultaneously so there is always a tradeoff in the Design Goal. Design has mainly four kinds of topologiesresistive Termination common source, Common Gate, Shunt Series feedback common source, Inductive degeneration common source, Cascade Inductive Source Degeneration CS [1]. In Resistive Termination CS & Shunt Series feedback CS topologynoise is added from the resister, whereas in Common Gate Topology the input impedance varies the Bias Current but in Inductive Degeneration CS the Source and Gate Inductor make the input impedance 50 ohm without adding the noise from the input. Whereas Cascade Inductor CS Degeneration offers good isolation between input and Output, higher gain and low noise figure. To fulfill multiple requirement of and an effort has been made to utilize Cascade Topology, while the CS Transistor implies Inductive Degeneration Technique. An important advantage of this method is that the real part of the input impedance can be controlled through choice of Inductance. Here Performance analysis is done for s designed using Inductive Degeneration Technique. The first three s are Narrowband having frequency band.45 GHz to.85ghz used for Bluetooth application. The fourth is Wideband having frequency band 3.1 GHz to 10.6 GHz used for IRUWB receiver application. The simulation is done on ADS010. This paper is organized as follows Section II details the parameters calculation with values for the analysis of s, Section III details the description of Theory and Design of all four s, Section IV presents the simulation result using software ADS010. Section IV summarizes the findings of better on application and type basis in the conclusion section. II. THEORY AND ANALYSIS The Design Procedure is given as follows Starting with value of degeneration Inductor (Ls) i.e. the value of Ls is fairly arbitrary but its maximum limit is 10 nh [8]. Here we will pick Ls= 0.5 nh 1) Cut off frequency ) Quality Factor of Inductor..... (1)..... () from calculating using above equation no. (3)... (3) 3) Centre Frequency (4) 4) Evaluation of Lg 5) Gate to Source Capacitance( ( ) 6) Width of Transistor W.. (5). (6) (7) Here we are using CMOS μm process, which allow a minimum gate length of 0.6 μm. Assuming = * All rights reserved by 983

2 Performance Analysis of Narrowband and Wideband s for Bluetooth and IRUWB 7) Calculation of 8) V effective Therefore we need to apply A) 9) Bias Current (8) = A/V (9) ) = (10) (For circuit (11) It is configured as Cascade Common Source Inductive Degeneration Topology. gives a very low noise figure because zero loss inductors have been used on the source and gate which is used in Narrowband (A) circuit, but it is off chip. We need to determine that sort of loaded Q s. We might get with the current technology at a frequency of.4ghz., but of course we could always use high Q offchip inductors but in the quest for systems on a chip we are restricted to gold bond wires (with a typical inductance of 1nH per 1mm of length) and spiral printed inductors. Schematic of shown below in fig. () Using the value calculated in previous section. Its operating Bluetooth frequency band is.45ghz.85ghz using Agilent CMOS14.5μm process transistor. [5] 10) Estimated optimum noise figure( ( ) ( ) (1) III. CIRCUIT DESIGN The design of three Narrowband s is shown with brief details A. Narrowband It is configured as CS Inductive degeneration topology. The schematic diagram of shown below in fig. (1) Using the value calculated in previous section II for operating Bluetooth frequency band.45ghz.85ghz. Agilent CMOS14.5μm process transistor is used. [5] The current mirror is used to avoid extra voltage source in circuits. MOSFET M forms a current mirror with MOSFET M1.The width of MOSFET M is some small fraction of MOSFET M1 s width to minimize power overhead of the bias current. The resistance R1 is chosen large enough that its equivalent noise current is small enough to be ignored. In 50 ohm system its range is several hundred ohms to 1 kilo ohm. It isolates the current mirror from the RF input. Capacitor C1 and C is DC blocking coupling capacitor. B. Narrowband Fig. : Schematic of Narrowband The Cascade is the combination of CS device with CG load. This has the effect of increasing output impedance, better isolation between input and output and improved gain. C. Narrowband It is configured as Cascade CS Inductive Degeneration with simple CS stage added to the Cascade output to increase the power gain of. Schematic of shown below in fig. (3) Using the value calculated in previous section for operating Bluetooth frequency band.45ghz.85ghz. Agilent CMOS14.5μm process transistor is used. [5]. Fig. 1: Schematic of Narrowband Fig. 3: Schematic of Narrowband All rights reserved by 984

3 D. Wideband A schematic of wideband using Cascade CS inductive degeneration technique is shown in fig. (4). this design use Agilent CMOS14.4μm process with different (W) value [9]. In this design the value of Ls is fairly arbitrary but is ultimately limited on the maximum size of inductance allowed by the technology, which is typically about 10 nh. [6]. The gatesource Capacitance is evaluated as. (13) where is the center frequency, is source resistance. help of The degeneration inductor as is calculated with the (14) Performance Analysis of Narrowband and Wideband s for Bluetooth and IRUWB The value of gate inductance is calculated using.. (15) The peaking inductance LG3 helps to increase the forward Gain (S1) but does not keep the gain flat over the band of interest. However the combination of peaking inductance LG3 and feedback resistor RF3 keeps the gain constant over the band of interest. Fig. 5: Measured SParameter, Noise Figure vs. Frequency B. Narrowband Fig. 6: Measured SParameter, Noise Figure vs. Frequency Fig. 4: Schematic of Narrowband IV. SIMULATION RESULTS All the simulation is done on ADS 010 software. The simulation is done for Scattering parameter analysis, Noise analysis, DC analysis and stability factor analysis. The simulation results of circuits given previously shown below Narrowband results (A) ( (C) A. Narrowband Table. 1: DC analysis for drain current and gate voltage Fig. 7: Measured Stability Factor vs. Frequency Table. : DC analysis for drain current and gate voltage All rights reserved by 985

4 Performance Analysis of Narrowband and Wideband s for Bluetooth and IRUWB C. Narrowband Fig. 8: Measured SParameter, Noise Figure vs. Frequency Fig. 11: Measured Stability Factor vs. Frequency The table shown below a result summarize of all four : Table. 4: Analysis of all four s in terms of Reflection coefficients (S 11 ) & (S ), Gain (S1), Noise figure and Power Consumption. Refere nce A Gate lengt h (µm) 0.6 B 0.6 Freq uenc y (GH z) S S Ga in S S Noi se Fig ure B ) Vdd/ Id (V/m A) 1.5/ /1 0.9 Po wer (m W) Fig. 9: Measured Stability Factor vs. Frequency Table. 3: DC analysis for drain current and gate voltage C / NA D /N A NA D. Wideband Fig. 10: Measured SParameter, Noise Figure vs. Frequency V. CONCLUSION Both type of i.e. Narrowband is for Bluetooth and Wideband is for IRUWB System is presented. We found that Cascade Inductive Source Degeneration CS topology fulfill all the major requirements like a good tradeoff between input impedance matching, Gain, input/output reflection coefficient with suitable noise figure. CMOS transistor helps us to reduce the power consumption. Among the Narrowband s the third has a good gain of 1dB with noise figure of.03 db is unconditionally stable. These results agree that Narrowband is suitable for Bluetooth application and the Wideband has good input matching and noise figure simultaneously. Inductive source degeneration technique helps to achieved high and flat gain (S 1 ) all over frequency band. This is unconditionally stable with stability factor >1.These results demonstrate that Wideband shown here is suitable for UWB impulse radio system applications. All rights reserved by 986

5 Performance Analysis of Narrowband and Wideband s for Bluetooth and IRUWB REFERENCES [1] D. K. Schaefer and T.H.Lee, A 1.5V, 1.5GHz CMOS Low Noise Amplifier, IEEE J. SolidState Circuits, vol. 3, no. 5, pp , May [] D. M. Pozar, "Microwave and RF Design of Wireless System" 3rd Edition: John Wiley & Sons Inc., 001 chapter 3. [3] Behzad Razavi, RF Microelectronics, Prentice Hall, [4] J P Silver MOS differential Design Tutorial.007 [5] JP Silver MOS Common source Design Tutorial.007 [6] Alpna P. Adsul, Shrikant K.Bodhe, Performance Evaluation OF Different s having Noise Cancellion and Phase Linearity Characteristic for IR UWB.01 [7] T Soorapanth, T.H Lee, RF Linearity of Short Channel MOSFETs, IEEE Journal of Solid State Circuits, vol. 3, no. 5, May [8] T.H Lee, The Design of CMOS Radio Frequency Integrated Circuits, Cambridge University Press.1998,chapter11 [9] A.P Adsul and DR S.K Bodhe A LowNoise Amplifier Design for GHz IRUWB Receivers.013 [10] C.S Kim, M Park, CH Kim, Y C Hyeon, H KYu, K Lee, K S Nam, A fully integrated 1.9GHz CMOS Low noise amplifier in IEEE Microwave and guided wave letters, Vol. 8, No 8 August All rights reserved by 987