AN4271 Application note
|
|
- Jody Barnett
- 5 years ago
- Views:
Transcription
1 Introduction Application note Using the SPIRIT1 transceiver with range extender under EN at 868 MHz Placido De Vita The SPIRIT1 is a very low power RF transceiver, intended for RF wireless applications in the sub-1 GHz band. It is designed to operate both in the license-free ISM and SRD frequency bands at 169, 315, 433, 868 and 915 MHz. This application note outlines the expected performance when using the SPIRIT1 under EN (v2.4.1, ) [2 ] in the to MHz band. This band is not defined for specific applications, the maximum radiated power is +27 dbm (500 mw), and the defined channel spacing is < 25 khz with 10% duty cycle. The whole stated frequency band may also be used as 1 wide-band channel for high speed data transmission. For details on the regulatory limits in the MHz SRD frequency bands, please refer to ETSI EN v2.4.1 [2] and ERC Recommendation [3]. These can be downloaded from and October 2013 DocID Rev 1 1/20
2 Contents Contents 1 Application circuit Transmitter parameters Adjacent channel power Modulation bandwidth Unwanted emissions in the spurious domain Receiver parameters Receiver sensitivity Blocking Receiver spurious radiation Measuring equipment Reference Revision history /20 DocID Rev 1
3 Application circuit 1 Application circuit Figure 1 shows the SPIRIT1 with range extender application board photo. The application is made up of 2 boards: a daughterboard and a motherboard. The daughterboard holds the SPIRIT1 with the circuits necessary for its function. For correct operation, the daughterboard must be plugged into the motherboard (see Figure 2) by two header 5x2 connectors (J6 and J7). The motherboard is equipped with an STM32L152VBT6 microcontroller to correctly program the transceiver. The microcontroller is programmed with firmware developed for the SPIRIT1 application. A graphical user interface (GUI) has been developed for programming of the SPIRIT1. The daughterboard includes a 50 MHz crystal to provide the correct oscillator to the SPIRIT1. The SPIRIT1 has an internal SMPS that drastically reduces power consumption, making the SPIRIT1 the best-in-class for the application on this bandwidth. The SMPS is fed from the battery (1.8 V to 3.6 V) and provides a programmable voltage (1.4 V typ) to the device. An SMA connector is provided to connect the board to the antenna or to instrumentation in order to verify correct functionality and confirm the ETSI standard required. A few of passive devices (inductors and capacitors) are used as matching/filtering for the power amplifier (PA) and balun network for the receiver. A SAW filter is recommended in the TX path to attenuate the spurious emissions above the carrier frequency, which would otherwise violate spurious emissions limits under ETSI [2]. The same SAW filter is provided in the RX path because, due the proximity of the GSM band, the receiver can be saturated in an application environment. This SAW filter can be bypassed using a short R1 resistor. The SAW filter used is a Tai-Saw Technology CO., LTD. TA MHz SAW filter [5]. An external FEM (front-end module) is used to improve the output power at the +27 dbm requested. The FEM utilized is a Skyworks SE2435L [6]. The device includes a power amplifier (PA) capable of about +27 dbm of transmitted output power. The receive channel consists of an integrated LNA (low noise amplifier) with programmable bypass. An integrated antenna switch, which provides an insertion loss of approximately 0.8 db, separates the TX and RX paths. DocID Rev 1 3/20
4 Application circuit Figure 1. SPIRIT1 with range extender application daughterboard Figure 2. SPIRIT1 application daughterboard plugged into the motherboard 4/20 DocID Rev 1
5 DocID Rev 1 5/20 Application circuit Figure 3. Daughterboard circuit schematic (1 of 2) C6 C_220p_0402_C0G R14 R_100k_0402 C10 C_10P_0402_C0G L1 L_3n_0402 C12 C_100n_0402_X7R Y1 XTAL C22 C_330p_0402_C0G U1 SPIRIT1 GPIO_0 1 SDO 2 SDI 3 SCLK 4 CSn 5 VBAT2 8 XOUT 6 XIN 7 RXP 9 RXN 10 REXT 11 TX 12 SMPS2 13 SMPS1 14 VBAT1 16 SDn 15 VREG 17 GPIO_3 18 GPIO_2 19 GPIO_1 20 GND 21 C8 C_220p_0402_C0G L7 L_10U_0805 L4 L_18n_0402 J6 HEADER 5X C1 ne C2 C_8.2p_0402_C0G L3 L_4.3n_0402 U3 M95640 ns 1 Q 2 nw 3 Vss 4 Vcc 8 nhold 7 C 6 D 5 L2 0R0 C13 C_560p_0402_X7R R12 R_100k_0402 C20 C_1U_0603_X7R C4 C_2.2pF_0402_COG C3 C_5.6p_0402_C0G C33 C_100n_0402_X7R C14 C_1.2p_0402_C0G L10 L_10n_0402 C9 C_12P_0402_C0G L8 0R0 C15 ne C19 C_10n_0402_X7R C0 C_100n_0402_X7R R13 R_100k_0402 C5 C_1.8p_0402_C0G L6 L_22n_0402 C11 C_470n_0603_X7R J7 HEADER 5X C21 C_100p_0402_C0G L9 L_2.7n_0402 L0 L_100n_0402 L5 L_18n_0402 U7 TMM SDn GPIO0 GPIO1 GPIO3 SCLK SDO SDI CSn GPIO2 DUMMY3 ns ns SCLK SDI SDO VCC_RF 3V3 VCC_RF 3V3 TX_Path GPIO2 GPIO1 GPIO0 RX_Path NX3225GA-xxMHz (XTAL) GAMS FSR
6 Application circuit 6/20 DocID Rev 1 Figure 4. Daughterboard circuit schematic (2 of 2) R3 1k C27 C_12p_0402_C0G C32 C_2.2p_0402_C0G J1 RF_IN/OUT U8 TA0801A Gnd 1 In 2 Gnd 3 Gnd 4 Out 5 Gnd 6 R4 1k L16 L_7.5n_0402 C25 C_10n_0402_X7R C24 C_33p_0402_COG C29 C_6.8p_0402_C0G C18 C_4.7u_0603_X5R C30 C_3.3p_0402_COG L12 L_6.8n_0603 L18 L_6.8n_0603 R1 ne R6 50 L15 L_4.7n_0402 C23 C_1n_0402_X7R C31 C_22p_0402_COG L17 L_6.8n_0603 U9 SE2435L CSD 1 PA_IN 2 CPS 3 CTX 4 TX_FLT 5 TR 6 ANT_SEL 7 GND 8 LNA_IN 9 NC 10 RX_FLT 11 ANT2 12 VCC1 24 VCC0 23 NC 22 VCC2 21 PA_OUT 20 NC 19 NC 18 NC 17 TX_IN 16 NC 15 ANT1 14 NC 13 GND 25 L14 L_7.5n_0402 U10 TA0801A Gnd 1 In 2 Gnd 3 Gnd 4 Out 5 Gnd 6 R2 1k R5 50 C7 C_220p_0402_C0G C28 C_3p_0402_COG L13 L_3.3n_0402 C26 C_100p_0402_COG 3V3 TX_Path GPIO0 GPIO1 GPIO2 RX_Path GAMS FSR
7 Transmitter parameters 2 Transmitter parameters All the measurements reported here have been measured with the following parameters: T C = 25 C, V DD = 3.3 V, f = MHz. The adjacent channel power, modulation bandwidth and unwanted emissions in the spurious domain measurements are also reported. The measurements are performed in accordance with EN v1 [2]. 2.1 Adjacent channel power The adjacent channel power (ACP) is defined as the amount of the modulated RF signal power which falls within a given adjacent channel. This power is the sum of the mean power produced by the modulation, hum and noise of the transmitter. This measurement is applicable only to narrow band systems. This test measures the power transmitted on the adjacent channel during continuous modulation. The ACP is measured with a spectrum analyzer conforming to the requirements given in the EN v2.4.1 ( ) [2] annex C. In this application note, the ACP measured with 12.5 khz channel spacing is investigated. For this measurement, the integrated bandwidth of the adjacent channel is 8.5 khz. The ETSI limits for the ACP is 10 μw (-20 dbm) for channel separation of 12.5 khz. Figure 5 illustrates the measured ACP at the MHz center frequency. The data rate is set to 2.4 kbps, the frequency deviation is set to 2.4 khz, and the modulation is set to Gaussian FSK (GFSK) with a BT = 0.5. The output power integrated around the carrier is 27 dbm in 8.5 khz bandwidth. With this power the ACP is -30 dbm, which is 10 db better than the ETSI limit. The SPIRIT1 is fully compliant with the ETSI transmitter adjacent channel power requirements, with margin. DocID Rev 1 7/20
8 Transmitter parameters Figure 5. adjacent power measurement, 12.5 khz narrow band channel spacing Adjacent channel power, 2.4 kbps data rate, 2.4 khz frequency devia on ACP = -30 dbm 10 Ouput power [dbm] khz 8.5 khz 8.5 khz E E E E E E+08 Frequency [Hz] GAMS FSR 2.2 Modulation bandwidth The range of the modulation bandwidth includes all associated side bands above the appropriate emissions level and the frequency error or drift under extreme test conditions. The frequency drift in extreme test conditions primarily depends on the crystal quality, which is not included in this report. This measurement applies to equipment not covered by the adjacent channel power clause, so the measurement is performed for a case with a channel bandwidth greater than 25 khz. Figure 6 illustrates the ETSI spectral mask with which the radio must comply at the subband edges. Basically, there are only two limit thresholds. What changes is the bandwidth of integration at the different offset regions. The same spectral mask is reported in Figure 7. The device center frequency is MHz, the data rate is set to 38.4 kbps, the frequency deviation to 20 khz and Gaussian FSK (GFSK) with a BT = 0.5 as modulation is chosen. The applied output power is set to 27 dbm. With these parameters, the spectral masks of the SPIRIT1 complies with ETSI [2] subclause /20 DocID Rev 1
9 Transmitter parameters Figure 6. ETSI spectral mask measurement limits and sub-band edges -30 dbm/1 khz -36 dbm/1 khz -36 dbm/10 khz -36 dbm/100 khz f c f e f e +200 khz f e +400 khz f e +1 MHz GAMS FSR where: f c is the emission center frequency f e is the sub-band edge frequency only the upper half of the emission is shown. The lower half is a mirror image. 25 Figure 7. spectral mask measurement, 100 khz channel spacing Spectral mask, 38.4 kbps data rate, 20 khz devia on Output power [dbm] dbm -36 dbm E E E E E E E E E E E E E+08 Frequency [Hz] GAMS FSR DocID Rev 1 9/20
10 Transmitter parameters 2.3 Unwanted emissions in the spurious domain Spurious emissions are unwanted emissions in the spurious domain at frequencies other than those of the desired carrier frequency and its sidebands associated with normal test modulation. A spectrum analyzer is used as external receiver. The measurement is performed setting the SPIRIT1 without modulation and observing it at up to 6 GHz as described in the ETSI [2] subclause 7.8. The measurement is split into two graphs: in Figure 8 the unwanted spurious emission for frequencies below 1 GHz is shown. The measurement is performed setting the instrument to a resolution bandwidth of 100 khz, as required by ETSI [2]. In Figure 9, the unwanted spurious emission for frequencies from 1 GHz to 6 GHz is shown. The measurement is performed setting the instrument to a resolution bandwidth of 1 MHz, as required by ETSI [2]. In the two graphs, the mask requirement from ETSI is reported also. The unwanted emissions in the spurious domain of the SPIRIT1 complies with ETSI [2] subclause 7.8. Figure 8. Unwanted spurious emission below 1 GHz Spirit ETSI mask 10 0 Output power [dbm] E+00 1.E+08 2.E+08 3.E+08 4.E+08 5.E+08 6.E+08 7.E+08 8.E+08 9.E+08 1.E+09 Frequency [MHz] GAMS FSR 10/20 DocID Rev 1
11 Transmitter parameters Figure 9. Unwanted spurious emission over 1 GHz -10 Spirit ETSI mask -20 Output power [dbm] E+09 2.E+09 2.E+09 3.E+09 3.E+09 4.E+09 4.E+09 5.E+09 5.E+09 6.E+09 6.E+09 Frequency [MHz] GAMS FSR DocID Rev 1 11/20
12 Receiver parameters 3 Receiver parameters All the measurement reported here are measured with the following parameters: T C = 25 C, V DD = 3.3 V, f = MHz. The family of short range radio devices is divided into three receiver categories, each having a set of relevant receiver requirements and minimum performance criteria. The set of receiver requirements depends on the choice of receiver category by the equipment provider. The SPIRIT1 is a transceiver that meets the requirements of receiver category 2, which means medium reliable SRD communication media that can cause inconvenience to persons, which cannot simply be overcome by other means. The main parameters that have to be measured for category 2 devices are sensitivity, blocking and receiver spurious radiation. 3.1 Receiver sensitivity Receiver sensitivity is the minimum level of the signal at receiver input, produced by a carrier at the nominal frequency of the receiver, modulated with the normal test signal modulation, which produces performance of a bit error rate (BER) of 10-2 without correction. Under normal test conditions, the value of the typical usable sensitivity for 25 khz channel spacing equipment with a 16 khz bandwidth shall not exceed -107 dbm. If the RX bandwidth is not 16 khz, the sensitivity limit is modified according to the following formula: Equation 1 Sp[dBm] 10log BW[kHz] = The measurement is performed using an RF signal source generator centered at the same receiver frequency as the desired modulation signal. The demodulated data and clock are taken from the SPIRIT1 receiver and sent to the same generator to do the BER measurement. The generator signal level is reduced until a BER of 1% is obtained. To reduce power consumption, an internal SMPS is integrated in the SPIRIT1. Figure 10 demonstrates the ETSI 1% BER sensitivity limit (red line) and the SPIRIT1 sensitivity for different data rate. This application note outlines the expected performance when using the SPIRIT1 under EN (v2.4.1, ) [2] in the MHz band, with the channel lower than 25 khz, or with a single channel of the 250 khz band. Just to show the real performance of the application, different channel spacings are shown. The test conditions are: GFSK (BT = 0.5) modulation with 2.4 khz frequency deviation and 8 khz channel bandwidth for the 2.4 kbps data rate, GFSK (BT = 0.5) modulation with 1.2 khz frequency deviation and 8 khz channel bandwidth for the 4.8 kbps data rate, GFSK (BT = 1) modulation with 20 khz frequency deviation and 250 khz channel bandwidth for the 38.4 kbps data rate. The sensitivity is also measured with a PER of 1%. The SPIRIT1 is fully compliant with ETSI class 2 receiver sensitivity requirements, with a large margin. 12/20 DocID Rev 1
13 Receiver parameters Figure 10. Sensitivity vs. data rate with 1% BER Sensi vity [dbm] Measured ETSI Limits Data Rate [kbps] GAMS FSR 3.2 Blocking Blocking is a measure of the capability of the receiver to receive a wanted modulated signal without exceeding a given degradation due to the presence of an unwanted input signal at any frequency other than those of the spurious responses or the adjacent channels or bands. All the blocking results are measured by positioning the input power 3 db above the measured sensitivity limit reported in the previous paragraph, with a primary signal source generator. A second generator with an un-modulated signal is used as the interferer and combined with the primary signal using a power combiner. The second interferer generator is placed at the desired frequency offset and the power is increased until the BER degradation of 1% is obtained. ETSI specifies the blocking limits in absolute values at two points: ±2 and ±10 MHz. The limit for class 2 receiver at ±2 MHz is > 35 db - 10log(BWkHz/16 khz), at ±10 MHz it is > 60 db - 10log(BWkHz/16 khz). Figure 11 shows the blocking curves with 2.4 kbps and 4.8 kbps data rates; Figure 12 shows the blocking curve with 38.4 kbps data rate. The SPIRIT1 with range extender is fully compliant with ETSI class 2 receiver blocking requirements, with a large margin. DocID Rev 1 13/20
14 Receiver parameters Figure 11. RX blocking vs. CW interferer offset with 1% BER, 1.2 kbps data rate CW interference level [dbm] kbps 4.8 kbps ETSI Limits CW interferer offset [khz] GAMS FSR Figure 12. RX blocking vs. CW interferer offset with 1% BER, 500 kbps data rate kbps 80 ETSI Limits 70 CW interference level [dbm] CW interferer offset [khz] GAMS FSR 3.3 Receiver spurious radiation Spurious radiation from the receiver are components at any frequency radiated by the equipment and antenna. 14/20 DocID Rev 1
15 Receiver parameters A spectrum analyzer is used as external receiver. The measurement is performed setting the SPIRIT1 without modulation and observing it at up to 6 GHz as described in the ETSI [2] sub-clause 8.6. The measurement is split into two graphs: in Figure 13 the unwanted spurious emission for frequencies below 1 GHz is shown. The measurement is performed setting the instrument to a resolution bandwidth of 100 khz, as required by ETSI [2]. In Figure 14 the spurious radiation from the receiver for frequencies from 1 GHz to 6 GHz is shown. The measurement is performed setting the instrument to a resolution bandwidth of 1 MHz, as required by ETSI [2]. In the two graphs, the mask required by ETSI is reported also. The receiver spurious radiation of the SPIRIT1 complies with ETSI [2] sub-clause 8.6. Figure 13. Receiver spurious emission below 1 GHz Spirit ETSI mask -60 Output power [dbm] E+00 1.E+08 2.E+08 3.E+08 4.E+08 5.E+08 6.E+08 7.E+08 8.E+08 9.E+08 1.E+09 Frequency [Hz] GAMS FSR DocID Rev 1 15/20
16 Receiver parameters Figure 14. Receiver spurious emission over 1 GHz -30 Spirit ETSI mask Output power [dbm] E+09 2.E+09 2.E+09 3.E+09 3.E+09 4.E+09 4.E+09 5.E+09 5.E+09 6.E+09 6.E+09 Frequency [Hz] GAMS FSR 16/20 DocID Rev 1
17 Measuring equipment 4 Measuring equipment The following equipment was used to perform the measurements. Table 1. Measuring equipment Measurement Instrument type Instrument model RX Signal generator Agilent ESG E4438C Agilent ESG E4438C TX Signal analyzer R&S FSIQ7 DocID Rev 1 17/20
18 Reference 5 Reference 1. STMicroelectronics SPIRIT1 datasheet 2. ETSI EN V2.4.1: Electromagnetic compatibility and Radio spectrum Matters (ERM); Short Range Devices (SRD); Radio equipment to be used in the 25 MHz to 1000 MHz frequency range with power levels ranging up to 500 mw 3. CEPT/ERC/Recommendation 70-03: Relating to the use of Short Range Devices (SRD) 4. CEN/TC pren : : Communication systems for meters and remote reading of meters - Part 4: Wireless meter readout (Radio meter reading for operating in SRD bands) 5. TAI-SAW Technology CO., LTD. TA0801A SAW Filter 868 MHz datasheet 6. Skyworks SE2435L: MHz High Power RF Front End Module datasheet 18/20 DocID Rev 1
19 Revision history 6 Revision history Table 2. Document revision history Date Revision Changes 24-Oct Initial release. DocID Rev 1 19/20
20 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 20/20 DocID Rev 1
AN4110 Application note
Application note Using the SPIRIT1 transceiver under EN 300 220 at 868 MHz Introduction By Placido De Vita The SPIRIT1 is a very low power RF transceiver, intended for RF wireless applications in the sub-1
More informationAN4103 Application note
AN43 Application note Using the SPIRIT1 transceiver under EN 300 220 at 169 MHz Introduction By Placido De Vita SPIRIT1 is a very low power RF transceiver, intended for RF wireless applications in the
More informationAN4305 Application note
Introduction Application note Using the SPIRIT1 transceiver with range extender under EN 300 at 169 MHz Placido De Vita The SPIRIT1 is a very low power RF transceiver, intended for RF wireless applications
More informationSTEVAL-IKR002V4B. SPIRIT1 - low data rate transceiver MHz - daughterboard integrated balun. Description. Features
STEVAL-IKR00VB SPIRIT - low data rate transceiver - MHz - daughterboard integrated balun Description Data brief The STEVAL-IKR00VB evaluation daughterboard is based on the SPIRIT, a sub- GHz low power,
More informationAN4148 Application note
Application note Using the SPIRIT1 transceiver under ARIB STD-T93 in the 315 MHz band Introduction By Placido De Vita The SPIRIT1 is a very low power RF transceiver, intended for RF wireless applications
More informationAN4126 Application note
Application note Using the SPIRIT1 transceiver under FCC title 47 part 15 in the 92-928 MHz band Introduction By Placido De Vita The SPIRIT1 is a very low power RF transceiver, intended for RF wireless
More informationAN4133 Application note
Application note Using the SPIRIT1 transceiver under ARIB STD-T108 in the 920 MHz band Introduction By Placido De Vita SPIRIT1 is a very low power RF transceiver, intended for RF wireless applications
More informationAN4174 Application note
Application note Using the SPIRIT1 transceiver under the ARIB STD-T67 standard in the 426 MHz band Introduction By Placido De Vita The SPIRIT1 is a very low power RF transceiver, intended for RF wireless
More informationBALF-SPI-01D3. 50 ohm nominal input / conjugate match balun to Spirit1, with integrated harmonic filter. Features. Applications. Description.
50 ohm nominal input / conjugate match balun to Spirit1, with integrated harmonic filter Features Datasheet production data 50 Ω nominal input / conjugate match to Spirit1 Low insertion loss Low amplitude
More informationAN5009 Application note
AN5009 Application note Using the S2-LP transceiver under FCC title 47 part 90 in the 450 470 MHz band Introduction The S2-LP is a very low power RF transceiver, intended for RF wireless applications in
More informationAN4949 Application note
Application note Using the S2-LP transceiver under FCC title 47 part 15 in the 902 928 MHz band Introduction The S2-LP is a very low power RF transceiver, intended for RF wireless applications in the sub-1
More informationBALF D3. 50 ohm nominal input / conjugate match balun for STLC2690, with integrated harmonic filter. Description. Features.
50 ohm nominal input / conjugate match balun for STLC2690, with integrated harmonic filter Description Datasheet production data Features 50 Ω nominal input / matched output differential impedance Integrated
More informationBALF-NRG-01D3. 50 Ω / conjugate match to BlueNRG balun transformer and integrated filtering. Description. Features. Applications.
50 Ω / conjugate match to BlueNRG balun transformer and integrated filtering Description Datasheet production data STMicroelectronics BALF-NRG-01D3 is an ultra miniature balun. The BALF-NRG-01D3 integrates
More informationLM323. Three-terminal 3 A adjustable voltage regulators. Description. Features
Three-terminal 3 A adjustable voltage regulators Description Datasheet - production data Features TO-220 Output current: 3 A Internal current and thermal limiting Typical output impedance: 0.01 Ω Minimum
More informationAN4327 Application note
Application note CR95HF RF transceiver board tuning circuit with EMI filter Introduction The purpose of this application note is to describe the antenna tuning circuit of the CR95HF RF transceiver board
More informationLD A, very low drop voltage regulators. Features. Description. Table 1. Device summary
3 A, very low drop voltage regulators Datasheet - production data Table 1. Device summary Order codes LD29300P2M33R LD29300P2MTR Output voltages 3.3 V ADJ P²PAK/A Features Very low dropout voltage (typ.
More informationMMBTA42. Small signal NPN transistor. Features. Applications. Description
Small signal NPN transistor Datasheet - production data Features Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The PNP complementary type is MMBTA92 SOT-23 Figure
More informationAN4439 Application note
Application note L99ASC03 current sense amplifier offset adjust Introduction The L99ASC03 is a 3 phase BLDC motor controller. This device drives 6 MOSFETs for standard trapezoidal driven BLDC motors using
More informationSTLQ ma, 3 μa supply current low drop linear regulator. Features. Applications. Description
50 ma, 3 μa supply current low drop linear regulator Datasheet - production data Features SOT323-5L 2.3 V to 12 V input voltage range 50 ma maximum output current 3 µa quiescent current Available in 1.8
More informationSTR2550. High voltage fast-switching PNP power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma
High voltage fast-switching PNP power transistor Features Datasheet - production data Excellent h FE linearity up to 50 ma 3 1 2 Miniature SOT-23 plastic package for surface mounting circuits Tape and
More informationMEMS audio surface-mount bottom-port silicon microphone with analog output. Description. Table 1. Device summary
MEMS audio surface-mount bottom-port silicon microphone with analog output Description Datasheet - production data Features RHLGA 3.76 x 2.95 x 1.0 mm Single supply voltage Low power consumption Omnidirectional
More informationMJB44H11T4-A. Automotive-grade low voltage NPN power transistor. Features. Applications. Description
Automotive-grade low voltage NPN power transistor Features Datasheet - production data TAB Designed for automotive applications and AEC- Q101 qualified Low collector-emitter saturation voltage Fast switching
More informationLow noise and low drop voltage regulator with shutdown function. Description
Low noise and low drop voltage regulator with shutdown function Features SOT23-5L Description Datasheet - production data The LK112S is a low-dropout linear regulator with shutdown function. The internal
More informationFeatures. Description. Table 1. Device summary. Order code Temperature range Package Packaging Marking
Micropower quad CMOS voltage comparator Features Datasheet - production data D SO14 (plastic micropackage) P TSSOP14 (thin shrink small outline package) Pin connections top view Extremely low supply current:
More informationFeatures. Description. Table 1. Device summary. Order code Packaging Branding LET9180 M246 LET9180. May 2013 DocID Rev 1 1/10
180 W, 32 V Wideband LDMOS transistor Features Datasheet - target specification Excellent thermal stability Common source configuration push-pull P OUT = 180 W with 19 db gain @ 860 MHz BeO-free package
More informationAN5029 Application note
Application note Using the S2-LP transceiver with FEM at 500 mw under FCC title 47 part 15 in the 902 928 MHz band Introduction The S2-LP very low power RF transceiver is intended for RF wireless applications
More informationLM248, LM348. Four UA741 quad bipolar operational amplifiers. Description. Features
Four UA741 quad bipolar operational amplifiers Description Datasheet - production data Features D SO14 Pin connections (top view) Low supply current: 0.53 ma per amplifier Class AB output stage: no crossover
More informationSTR1550. High voltage fast-switching NPN power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma
STR1550 High voltage fast-switching NPN power transistor Features Datasheet - production data Excellent h FE linearity up to 50 ma 3 1 2 Miniature SOT-23 plastic package for surface mounting circuits Tape
More informationEVALSTPM32. Single-phase energy metering evaluation board with shunt current sensor based on the STPM32. Description. Features
EVALSTPM Single-phase energy metering evaluation board with shunt current sensor based on the STPM Description Data brief Features 0.% accuracy single-phase meter V nom (RMS) = 0 to 00 V, I nom /I max(rms)
More information2STR2160. Low voltage fast-switching PNP power transistor. Features. Applications. Description
Low voltage fast-switching PNP power transistor Datasheet - production data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23
More informationSMA661AS. Fully integrated GPS LNA IC. Features. Applications. Description
Fully integrated GPS LNA IC Features Power down function Integrated matching networks Low noise figure 1.15 db @ 1.575 GHz High gain 18 db @ 1.575 GHz High linearity (IIP3 = +3 dbm) Temperature compensated
More informationLD39030SJ285R. 300 ma low quiescent current soft-start, low noise voltage regulator. Applications. Description. Features
LD393SJ 3 ma low quiescent current soft-start, low noise voltage regulator Applications Datasheet - production data Mobile phones Personal digital assistants (PDAs) Cordless phones and similar battery-powered
More informationDescription. Table 1. Device summary
Very low drop and low noise BiCMOS 300 ma voltage regulator Datasheet - production data SOT23-5L Features Input voltage from 2.5 V to 6 V Stable with low ESR ceramic capacitors Very low dropout voltage
More informationDual P-channel 100 V, Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island. Features
Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island Features Datasheet - production data 1 Order code V DS R DS(on) max. I D 4 STL13DP10F6 100 V
More informationEVAL-RHF310V1. EVAL-RHF310V1 evaluation board. Features. Description
evaluation board Data brief Features Mounted Engineering Model RHF310K1: Rad-hard, 120 MHz, operational amplifier (see RHF310 datasheet for further information) Mounted components (ready-to-use) Material:
More information1 Diagram Pin configuration Typical application Maximum ratings Electrical characteristics... 7
2 ma low quiescent current very low noise LDO Applications Datasheet - production data Mobile phones Personal digital assistants (PDAs) Cordless phones and similar battery-powered systems Digital still
More information50 Ω nominal input / conjugate match balun to nrf51422-qfaa, nrf24le1, nrf51822-qfaa/ab, with integrated harmonic filter.
50 Ω nominal input / conjugate match balun to nrf51422-qfaa, nrf24le1, nrf51822-qfaa/ab, with integrated harmonic filter Description Datasheet production data Features 50 Ω nominal input / conjugate match
More informationTDA W CAR RADIO AUDIO AMPLIFIER
TDA2003 10W CAR RADIO AUDIO AMPLIFIER DESCRIPTION The TDA 2003 has improved performance with the same pin configuration as the TDA 2002. The additional features of TDA 2002, very low number of external
More informationLM217M, LM317M. Medium current 1.2 to 37 V adjustable voltage regulator. Description. Features
Medium current 1.2 to 37 V adjustable voltage regulator Description Datasheet - production data TO-220 DPAK The LM217M and LM317M are monolithic integrated circuits in TO-220 and DPAK packages used as
More informationTDA7384A. 4 x 46 W quad bridge car radio amplifier. Features. Description
4 x 46 W quad bridge car radio amplifier Datasheet production data Features High output power capability: 4 x 46 W / 4 max. 4 x 27 W / 4 @ 14.4 V, 1 khz, 10 % Low distortion Low output noise Standby function
More informationChop away input offsets with TSZ121/TSZ122/TSZ124. Main components Single very high accuracy (5 μv) zero drift micropower 5 V operational amplifier
DT0015 Design tip Chop away input offsets with TSZ121/TSZ122/TSZ124 By Preet Sibia Main components TSZ121 TSZ122 TSZ124 Single very high accuracy (5 μv) zero drift micropower 5 V operational amplifier
More informationSTEVAL-ISQ010V1. High-side current-sense amplifier demonstration board based on the TSC102. Features. Description
High-side current-sense amplifier demonstration board based on the TSC102 Data brief Features Independent supply and input common-mode voltages Wide common-mode operating range: 2.8 V to 30 V Wide common-mode
More informationSD4931. HF/VHF/UHF RF power N-channel MOSFET. Features. Description
HF/VHF/UHF RF power N-channel MOSFET Features Datasheet - production data M174 Epoxy sealed Figure 1. Pin connection 4 1 Improved ruggedness V (BR)DSS > 200 V Excellent thermal stability 20:1 all phases
More informationDescription. Order code Package Packing
TDA7391PD 32 W bridge car radio amplifier Features High power capability: 40 W/3.2 EIAJ 32 W/3.2 @ V S = 14.4 V, f = 1 khz, d = 10 % 26 W/4 @ V S = 14.4 V, f = 1 khz, d = 10 % Differential inputs (either
More informationSTAC4932B. HF/VHF/UHF RF power N-channel MOSFET. Features. Description
STAC4932B HF/VHF/UHF RF power N-channel MOSFET Features Datasheet - production data Figure 1. Pin connection 1 STAC244B Air cavity 1 3 3 2 Excellent thermal stability Common source push-pull configuration
More information35 W bridge car radio amplifier with low voltage operation. Description. Table 1. Device summary. Order code Package Packing
35 W bridge car radio amplifier with low voltage operation Datasheet - production data Multiwatt11 Protections: Short circuit (to GND, to V S, across the load) Very inductive loads Chip over temperature
More informationTSOT23-5L. Description. systems. Regulator ground current increases Input voltage from 2.5 V to 6 V
Ultra low drop and low noise BiCMOS voltage regulators Flip-chip (1.57 x 1.22) SOT23-5L TSOT23-5L Datasheet - production data Internal current and thermal limit Output low noise voltage 30 µv RMS over
More informationTS881. Rail-to-rail 0.9 V nanopower comparator. Description. Features. Applications
Rail-to-rail 0.9 V nanopower comparator Description Datasheet - production data SC70-5 (top view) SOT23-5 (top view) The TS881 device is a single comparator featuring ultra low supply current (210 na typical
More informationDSL03. Secondary protection for VDSL2 lines. Description. Features. Complies with the following standards
Secondary protection for VDSL2 lines Description Datasheet - production data Features SOT23-6L High surge capability to comply with GR-1089 and ITU-T K20/21 Voltages: 10, 22 and 24 V Low capacitance device:
More informationLD A low drop positive voltage regulator: adjustable and fixed. Features. Description
3 A low drop positive voltage regulator: adjustable and fixed Datasheet - production data TO-220 TO-220FP Unlike PNP regulators, where a part of the output current is wasted as quiescent current, the LD1085
More informationLD A, very low drop voltage regulators. Description. Features
1.5 A, very low drop voltage regulators Datasheet - production data Description The is a high current, high accuracy, low-dropout voltage regulator series. These regulators feature 400 mv dropout voltage
More informationDescription. Table 1. Device summary table. Order code Temperature range Package Packing Marking SO-14. (automotive grade) (1)
QUAD 2-input NAND Schmitt trigger PDIP-14 SO-14 Applications Automotive Industrial Computer Consumer Datasheet - production data Features Schmitt trigger action on each input with no external components
More informationSTTH60AC06C. Turbo 2 ultrafast high voltage rectifier. Features. Description
Turbo 2 ultrafast high voltage rectifier Features Datasheet production data A1 A2 K Ultrafast switching Low reverse recovery current Reduces switching and conduction losses Low thermal resistance Insulated
More informationDescription. Table 1. Device summary. Order code Temp. range Package Packing Marking
Quad 2-input Schmitt NAND gate Datasheet - production data SO14 TSSOP14 Wide operating voltage range: V CC (opr) = 2 V to 6 V Pin and function compatible with 74 series 132 ESD performance HBM: 2 kv MM:
More informationFERD15S50. Field effect rectifier. Features. Description
Field effect rectifier Datasheet production data K Table 1. Device summary Symbol Value I F(AV) 15 A V RRM 50 V T j (max) +150 C V F (typ) A K PowerFLAT 5x6 FERD15S50DJF A 0.30 V Features ST proprietary
More informationDescription. Table 1. Device summary. Order codes
Positive voltage regulators Description Datasheet - production data Features TO-220 TO-220FP DPAK IPAK Output current to 0.5 A Output voltages of 5; 6; 8; 9; 12; 15; 24 V Thermal overload protection Short
More informationSTTH110-Y. Automotive high voltage ultrafast rectifier. Description. Features
Automotive high voltage ultrafast rectifier A K K A Description Datasheet - production data The, which is using ST s new 1000 V planar technology, is especially suited for switching mode base drive and
More informationECMF02-2BF3. Dual line IPAD, common mode filter with ESD protection for high speed serial interface. Description. Features.
Dual line IPAD, common mode filter with ESD protection for high speed serial interface Description Datasheet - production data The ECMF02-2BF3 is a highly integrated common mode filter designed to suppress
More informationSTEVAL-CCA040V1. 4X10 Watt dual/quad power amplifier demonstration board based on the STA540SAN. Features. Description
4X10 Watt dual/quad power amplifier demonstration board based on the STA540SAN Features High output-power capability: 4x10 W / 4 Ω at 17 V, 1 KHz, THD = 10% 2x26 W / 4 Ω at 14.4 V, 1 KHz, THD = 10% 2x15
More informationEMIF04-1K030F3. 4-line IPAD, EMI filter including ESD protection. Features. Application. Description. Complies with the following standards:
4-line IPAD, EMI filter including ESD protection Features Datasheet production data Flip-Chip package (9 bumps) Figure 1. Pin configuration (bump side) 4-line EMI symmetrical (I/O) low-pass filter High
More informationDescription. Notes: (1) Qualification and characterization according to AEC Q100 and Q003 or equivalent,
Quad dual-input and gate Datasheet - production data Features SOP14 TSSOP14 High speed: t PD = 7 ns (typ.) at V CC = 6 V Low power dissipation: I CC = 1 µa (max.) at T A = 25 C High noise immunity: V NIH
More informationAN4313 Application note
Application note Guidelines for designing touch sensing applications with projected sensors Introduction This application note describes the layout and mechanical design guidelines used for touch sensing
More informationAN4392 Application note
Application note Using the BlueNRG family transceivers under ARIB STD-T66 in the 2400 2483.5 MHz band Introduction BlueNRG family devices are very low power Bluetooth low energy (BLE) devices compliant
More informationLM2931. Very low drop voltage regulators with inhibit function. Description. Features
Very low drop voltage regulators with inhibit function Description Datasheet - production data DPAK Features SO-8 TO-92 Very low dropout voltage (90 mv typ. at 10 ma load) Low quiescent current (typ. 2.5
More informationAN4378 Application note
Application note Using the BlueNRG family transceivers under FCC title 47 part 15 in the 2400 2483.5 MHz band Introduction BlueNRG family devices are very low power Bluetooth low energy (BLE) devices compliant
More informationTDA x 45 W quad bridge car radio amplifier. Features. Description. Protections:
4 x 45 W quad bridge car radio amplifier Datasheet - production data Low external component count: Internally fixed gain (26 db) No external compensation No bootstrap capacitors Features High output power
More informationAN3218 Application note
Application note Adjacent channel rejection measurements for the STM32W108 platform 1 Introduction This application note describes a method which could be used to characterize adjacent channel rejection
More informationLCP03. Transient voltage suppressor for dual voltage SLIC. Features. Applications. Description
LCP3 Transient voltage suppressor for dual voltage SLIC Features Datasheet production data Figure 1. Functional diagram TIP RING TIP RING SO-8 LCP3 GND GND Figure 2. Pin-out configuration GND GND Protection
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packaging. STGW60V60F GW60V60F TO-247 Tube
TO-247 1 2 3 6 V, 6 A very high speed trench gate field-stop IGBT Features Datasheet - production data Very high speed switching series Maximum junction temperature: T J = 175 C Tail-less switching off
More informationFeatures. Description. Table 1. Device summary. Quality Level. Engineering Model
Hi-Rel NPN bipolar transistor 60 V, 50 ma Features Datasheet - production data 3 1 2 TO-18 1 2 3 3 4 1 2 LCC-3 LCC-3UB Figure 1. Internal schematic diagram Parameter Value BV CEO 60 V I C (max) 50 ma h
More informationSTAC3932B. HF/VHF/UHF RF power N-channel MOSFET. Features. Description
HF/VHF/UHF RF power N-channel MOSFET Features Datasheet - production data Excellent thermal stability Common source push-pull configuration P OUT = 580 W typ. with 24.6 db gain @ 123 MHz In compliance
More informationDescription. Table 1. Device summary. Order code Temp. range Package Packing Marking
9-bit parity generator Datasheet - production data Features SO14 TSSOP14 High-speed: t PD = 22 ns (typ.) at V CC = 6 V Low power dissipation: I CC = 4 μa (max.) at T A = 25 C High noise immunity: V NIH
More informationCBTVS2A12-1F3. Circuit breaker with transient voltage suppressor. Features. Description. Complies with the following standards:
Circuit breaker with transient voltage suppressor Features Datasheet - production data Flip Chip (4 bumps) Figure 1. Pin configuration (bump side) A B 1 Transient voltage suppressor (TVS) Non-resettable
More informationKF25B, KF33B KF50B, KF80B
KF25B, KF33B KF50B, KF80B Very low drop voltage regulators with inhibit Datasheet production data Features Very low dropout voltage (0.4 V) Very low quiescent current (typ. 50 µa in OFF mode, 500 µa in
More informationAN3332 Application note
Application note Generating PWM signals using STM8S-DISCOVERY Application overview This application user manual provides a short description of how to use the Timer 2 peripheral (TIM2) to generate three
More informationSTEVAL-ISA005V1. 1.8W buck topology power supply evaluation board with VIPer12AS. Features. Description. ST Components
Features Switch mode general purpose power supply Input: 85 to 264Vac @ 50/60Hz Output: 15V, 100mA @ 50/60Hz Output power (pick): 1.6W Second output through linear regulator: 5V / 60 or 20mA Description
More informationFeatures. Description. Table 1. Device summary. Agency specification
Hi-Rel NPN bipolar transistor 80 V - 5 A Features Datasheet - production data 2 3 TO-39 TO-257 2 3 SMD.5 Figure. Internal schematic diagram BV CEO I C (max) 80 V 5 A H FE at 0 V - 50 ma > 70 Operating
More informationESDAVLC6-1V2. Single line low capacitance Transil for ESD protection. Description. Features. Applications. Complies with following standards:
Single line low capacitance Transil for ESD protection Description Datasheet production data Features Ultra small PCB area = 0.09 mm² Unidirectional device Very low diode capacitance Low leakage current
More informationLD A ultra low-dropout voltage regulator. Applications. Description. Features
1.5 A ultra low-dropout voltage regulator Applications Datasheet - production data PPAK DFN6 (3x3 mm) Graphics processors PC add-in cards Microprocessor core voltage supply Low voltage digital ICs High
More information2N2219AHR. Hi-Rel NPN bipolar transistor 40 V A. Features. Description
Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BV CEO 40 V I C (max) 0.8 A H FE at 10 V - 150 ma > 100 Operating temperature range - 65 C to + 200 C Hi-Rel NPN bipolar transistor Linear gain characteristics
More informationD44H8 - D44H11 D45H8 - D45H11
D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed TAB Applications Power amplifier Switching circuits 1 2 3 Description
More informationAN1441 Application note
Application note ST890: a high side switch for PCMCIA and USB applications Introduction The ST890 is a low voltage, P-channel MOSFET power switch, intended for high side load switching applications. Its
More informationSTPSC20H065C. 650 V power Schottky silicon carbide diode. Description. Features
STPSC2H65C 65 V power Schottky silicon carbide diode Datasheet - production data Features A1 (1) A2 (3) A1 K A2 TO-22AB STPSC2H65CT A1 K K (2) A2 TO-247 STPSC2H65CW Description The SiC diode is an ultrahigh
More informationLM723CN. High precision voltage regulator. Features. Description
High precision voltage regulator Features Input voltage up to 40 V Output voltage adjustable from 2 to 37 V Positive or negative supply operation Series, shunt, switching or floating operation Output current
More informationObsolete Product(s) - Obsolete Product(s)
2N6284 2N6287 Complementary power Darlington transistors Features Complementary transistors in monolithic Darlington configuration Integrated collector-emitter antiparallel diode Applications Audio power
More informationDescription. Table 1. Device summary. Order code Temp. range Package Packing Marking
Hex bus buffer with 3-state outputs (non-inverting) Datasheet - production data Features SO16 TSSOP16 High-speed: t PD = 10 ns (typ.) at V CC = 6 V Low power dissipation: I CC = 4 μa (max.) at T A = 25
More informationDescription. Table 1. Device summary. Order code Temp. range Package Packaging Marking
Quad bus buffer (3-state) Datasheet - production data Features SO14 TSSOP14 High-speed: t PD = 8 ns (typ.) at V CC = 6 V Low power dissipation: I CC = 4 μa (max.) at T A = 25 C High noise immunity: V NIH
More informationObsolete Product(s) - Obsolete Product(s)
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical f t = 20 MHz Fully characterized at 125 o C Applications
More informationObsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
5 A low dropout fast response positive voltage regulator adjustable Features Typical dropout 1.2 V Fast transient response Three terminal adjustable Guaranteed output current up to 5 A Output tolerance
More informationAN1336 Application note
Application note Power-fail comparator for NVRAM supervisory devices Introduction Dealing with unexpected power loss Inadvertent or unexpected loss of power can cause a number of system level problems.
More informationDescription. Table 1. Device summary SOT-223 DPAK TO-220
Low drop fixed and adjustable positive voltage regulators Datasheet - production data SOT-223 Available in ± 2% (at 25 C) and 4% in full temperature range High supply voltage rejection: 80 db typ. (at
More informationTN1156 Technical note
Technical note Irradiated HV Power MOSFETs working in linear zone: a comparison of electro-thermal behavior with standard HV products Introduction This paper studies the thermal instability phenomenon
More informationUM1746 User manual. 500 W fully digital AC-DC power supply based on the STM32F334 microcontroller. Introduction
User manual 500 W fully digital AC-DC power supply based on the STM32F334 microcontroller Introduction This user manual describes the basic procedure to correctly operate the 500 W digital power supply
More informationBD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors
BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with
More informationAN4379 Application note
Application note SPC56L-Discovery Software examples Introduction This software package includes several firmware examples for SPC56L-Discovery Kit. These ready-to-run examples are provided to help the
More informationSTTH6003. High frequency secondary rectifier. Description. Features
High frequency secondary rectifier A1 A2 K Description Datasheet - production data Dual rectifier suited for switch mode power supply and high frequency DC to DC converters. Packaged in TO-247, this device
More informationObsolete Product(s) - Obsolete Product(s)
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2STC5949 Typical f t = 25 MHz Fully characterized at 125 o C Application Audio power amplifier
More informationBD235 BD237. Low voltage NPN power transistors. Features. Applications. Description. Low saturation voltage NPN transistors
BD235 BD237 Low voltage NPN power transistors Features Low saturation voltage NPN transistors Applications Audio, power linear and switching applications Description The devices are manufactured in Planar
More informationN-channel 500 V, Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package. Features. Description. Table 1. Device summary
N-channel 500 V, 0.035 Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package Features Datasheet - production data Order code V DSS (@T jmax ) R DS(on) max I D STW60NM50N 550 V
More informationL9914. All silicon voltage regulator. Features. Description. Multiwatt8
All silicon voltage regulator Features High side field driver Thermal protection Field driver short circuit protection RVC interface Overvoltage protection Complex diagnostics Load Response Control LRC
More information