AN4172 Application note
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1 AN7 Application note IEEE80.af class PoE converter reference design high efficiency flyback converter based on the PM8800A Introduction By Antonio Rotta The PM8800A is a highly integrated device embedding an IEEE80.af compliant powered device (PD) interface together with a PWM controller and support for auxiliary sources. This document focuses on a reference design for a high efficiency, class PD (up to W input) power converter based on a flyback topology with pulse transformer driven synchronous rectification using the PM8800A as the main controller. Schematics of the PoE converter are given in Section, while the related bill of material is detailed in Section. In Section efficiency measurements together with main waveforms of the PoE interface and power converter are shown. October 0 Doc ID 07 Rev /6
2 Contents AN7 Contents Electrical specifications Schematics Bill of material Test results Efficiency measurements Waveforms Startup sequence Primary side MOSFET Secondary side MOSFET Load transient Output ripple Revision history /6 Doc ID 07 Rev
3 AN7 Electrical specifications Electrical specifications Table. Specifications for. V output Parameter Description Min. Typ. Max. Unit Input voltage range Applied at RJ5 connector 0 57 V Operative input voltage 57 V UVLO Vin rising edge 6 V Vin falling edge 0 V Auxiliary input voltage range 8 56 V Output voltage (Vout) Vin = V to 57 V, Iout 0 to Imax V Output current (Iout) Vin = V to 57 V 0.5 A Peak-to-peak output ripple 8 Vin, Iout = Imax 0 50 mvpp Efficiency DC-DC only Vin = 8 V, Iout = Imax 90 % Overall efficiency Vin = 8 V, Iout = Imax 88 % Switching frequency 50 khz Doc ID 07 Rev /6
4 Schematics AN7 Schematics Figure. High efficiency PoE converter schematic: detail of the input section including data transformers and terminations A B C D C C8 8 KV Chassis Termination Data Transformer Use std IEEE 80.af data transformer Typical value for resistor 75 ohm Typical value for capacitor 0nF R0 Chassis Chassis OUTPUT J RJ5 Data Jack Chassis R 6 R R R5 C C5 R6 5 R T H09/TLA-6T7LF C6 8 KV 5 0 Chassis T H09/TLA-6T7LF C R 6 5 Chassis INPUT 0 9 RJ5 Data and Power Jack AM950v /6 Doc ID 07 Rev
5 AN7 Schematics Figure. High efficiency PoE converter: flyback topology with pulse transformer driven synchronous rectification C5 uf 06 C GND C 0.uF AGND C8 0u 6V 06 R9 00k nf AGND R C R C5 uf 6V C 7nF D9 SOD GND AGND C59 uf 6V GND T 0 9 R R R D SOD SOD D C6 COILCRAFT POEP-L 68pF C9 0u 6V 06 R R0 06 MMBT906 Q7 SOT R8 00k C5 DO8H-ML L 0.uH C9.n 8 KV R5 7 R.5V.5A C 0u 6V 06 C 0u 6.V 8x0.5 C9 0.uF R6 0 C9 0nF R9 680 C0 uf 6V R k % R 5K % D0 C5 00pF R SOD U TS SOT-5.K % R7 % R.k % 0.uF C 6 D8 T7 SOD COILCRAFT DA9-AL GND C D9 MMBT906 Q6 SOT SOD 5 Sharp PCH7 0.uF C Q Si88 SO8 5 C6 0.uF D0 SOD 7 R8 C0 6V 06 C 6V 06 C7 5 Q STSNLLH5 SO8 7nF GND R9 0. ohm 06 U 5 C 0.uF L 0uH MSS7-0ML C uf 06 6 C u 8x0. R 0k C8 0.uF R 70k % 7 AGND AGND 6 RT VFB 5 SS COMP COMP AUXII CS 8 CS VIN npgd npgd RCLASS VCC VCC GD AUXI_IRL C 70p GD 0 GND C6 0.u D STPSH00A Ex Pad GND 9 D STPSH00A DCCL VSS D0 STPSH00A D5 STPSH00A U PM8800A HTSSOP6 7 D STPSH00A D STPSH00A R8 5 D J58A STS0PF0L D STTHR0A Q SO8 R0 C R R D6 SOD D7 STTHR0A R 0R RT D5 SOD SS AUXII RCLASS AUXI_IRL DCCL VSS R7 % R5 R6 0k 5R % D8 STPSH00A D9 STPSH00A D5 BZX8C5 SOT C7 C R R5 R7 A B C D AUXII DC Power Jack C0 J AUXI DC Power Jack J C AM95v Doc ID 07 Rev 5/6
6 Bill of material AN7 Bill of material Table. Bill of material Qty. Reference Description Value Tol. Voltage Body Vendor C Ceramic capacitor 00 nf 00 V 60 TDK C, C, C, C5 Ceramic capacitor TBD 0% 00 V 60 TDK C6, C8 Ceramic capacitor TBD KV 8 TDK C Ceramic capacitor nf 0% 00 V 805 TDK C Aluminium capacitor µf 0% 00 V 80x0. Std low ESR C, C5 Ceramic capacitor µf 0% 00 V 06 TDK C6 Ceramic capacitor 68 pf 00 V 805 TDK C8, C9, C Ceramic capacitor 0 µf 6. V 805 TDK C Aluminium capacitor 0 µf 6. V 8x0. C5,C0, C59 Ceramic capacitor µf 0% 6 V 60 Std 6 C6, C8, C, C9, C, C5 Std low ESR Ceramic capacitor 00 nf 0% 50 V 60 Std C9 Ceramic capacitor. nf KV 8 TDK C, C7 Ceramic capacitor 7 nf 50 V 60 Std C Ceramic capacitor 70 pf 50 V 60 Std C9 Ceramic capacitor 0 nf 0% 50 V 60 Std D TVS diode J58A ST 9 8 D, D5, D8, D9, D0, D, D9, D0 D, D7, D8, D9, D, D, D, D7 Schottky diode 00 V SOD ST Schottky diode STPSH00A 00 V ST L SMT inductor 0 µh MSS7-0ML Coilcraft L SMT inductor 0. µh DO8H- ML Coilcraft Q MOSFET, N ch. Si V SO8 Vishay Q MOSFET, N ch. STSNLLH5 0 V SO8 ST Q6, Q7 Transistor, PNP MMBT906LT 0 V SOT Std 8 R, R, R, R, R5, R6, R7, R0 Chip resistor TBD 60 Std 6/6 Doc ID 07 Rev
7 AN7 Bill of material Table. Bill of material (continued) Qty. Reference Description Value Tol. Voltage Body Vendor R Chip resistor R0 06 Std R6 Chip resistor Std R8, R5 Chip resistor 7 60 Std R9 Chip resistor 00 K 805 Std R Chip resistor 70 K % 60 Std R, R6 Chip resistor 0 K 60 Std R Chip resistor 0 R 60 Std R6 Chip resistor 0 R 60 Std R8, R9 Chip resistor Std R Chip resistor 60 Std R Chip resistor K % 60 Std R Chip resistor Std R Chip resistor 5 K % 60 Std R5 Chip resistor 5R % 60 Std R8 Chip resistor 00 K 60 Std R9 Chip resistor 0. R 60 Std R Chip resistor. K % 60 Std R Chip resistor. K % 60 Std T, T POE+ magnetics H09 Pulse T Power transformer POEP-L Coilcraft T7 Gate driver transformer DA9-AL Coilcraft U POE controller PM8800A HTSSOP6 ST U SMT optocoupler PCH7 PDIP Sharp U Shunt regulator TSAILT SOT-5 ST Doc ID 07 Rev 7/6
8 Test results AN7 Test results. Efficiency measurements Figure. Efficiency measurements at 8 V input Isolated synchronous flyback converter with PM8800A Efficiency 00% 98% 96% 9% 9% 90% 88% 86% 8% 8% 80% 78% 76% 7% 7% 70% 68% 66% 6% 6% 60% 58% 56% overall dcdc + Hs input stage 5% 5% 50% Iout (A) AM95v The difference between DC-DC and overall measurements is about % from A to full load. In Figure it is possible to see the contribution to the total losses of the PD interface section of the converter; the major contribution comes from the rectification bridge. 8/6 Doc ID 07 Rev
9 AN7 Test results. Waveforms.. Startup sequence Figure. Startup from the Cisco Catalyst 750E switch with A load Figure 5. Startup from the PowerDsine 900GR.at injector with A load Doc ID 07 Rev 9/6
10 Test results AN7 Figure 6. Startup from the Phihong PSA6U-80.af injector with A load.. Primary side MOSFET Figure 7. Primary side Power MOSFET waveforms at 0 A load 0/6 Doc ID 07 Rev
11 AN7 Test results Figure 8. Primary side Power MOSFET waveforms at A load.. Secondary side MOSFET Figure 9. Secondary side Power MOSFET waveforms at 0 A load Doc ID 07 Rev /6
12 Test results AN7 Figure 0. Secondary side Power MOSFET waveforms at A load.. Load transient Figure. Response of the converter to a.5 A - A load transient /6 Doc ID 07 Rev
13 AN7 Test results..5 Output ripple Figure. Output ripple measurement at A Figure. Output ripple measurement at A with infinite persistence Doc ID 07 Rev /6
14 Test results AN7 Figure. Output ripple measurement at 0 A /6 Doc ID 07 Rev
15 AN7 Revision history 5 Revision history Table. Document revision history Date Revision Changes 0-Oct-0 Initial release. Doc ID 07 Rev 5/6
16 AN7 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIROENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 0 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 6/6 Doc ID 07 Rev
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ST662AB ST662AC DC-DC converter from 5 V to 12 V, 0.03 A for Flash memory programming supply Features Output voltage: 12 V ± 5 % Supply voltage range: 4.5 V to 5.5 V Guaranteed output current up to 30
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
5 A low dropout fast response positive voltage regulator adjustable Features Typical dropout 1.2 V Fast transient response Three terminal adjustable Guaranteed output current up to 5 A Output tolerance
ST8R00. Micropower 1 A synchronous step-up DC-DC converter. Features. Description
ST8R Micropower 1 A synchronous step-up DC-DC converter Features Output voltage adjustable from 6 V to 12 V Output voltage accuracy: ± 2% Output current up to 1 A Low ripple voltage: 5 mv (typ.) Synchronous
2N2219AHR. Hi-Rel NPN bipolar transistor 40 V A. Features. Description
Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BV CEO 40 V I C (max) 0.8 A H FE at 10 V - 150 ma > 100 Operating temperature range - 65 C to + 200 C Hi-Rel NPN bipolar transistor Linear gain characteristics
2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 C Application 1 2 3 Audio power
Obsolete Product(s) - Obsolete Product(s)
High gain Low Voltage PNP power transistor Features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current Applications Power management in portable
KF25B, KF33B KF50B, KF80B
KF25B, KF33B KF50B, KF80B Very low drop voltage regulators with inhibit Datasheet production data Features Very low dropout voltage (0.4 V) Very low quiescent current (typ. 50 µa in OFF mode, 500 µa in
3STL2540. Low voltage high performance PNP power transistor. Features. Applications. Description
Low voltage high performance PNP power transistor Datasheet production data Features Very low collector-emitter saturation voltage High current gain characteristic Small, thin, leadless SMD plastic package
BDX53B - BDX53C BDX54B - BDX54C
BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter
TIP2955 TIP3055. Complementary power transistors. Features. Applications. Description
TIP2955 TIP3055 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio Amplifier Description The devices
Obsolete Product(s) - Obsolete Product(s)
Low power single inverter gate Features High speed: t PD = 4.3 ns (max.) at V CC = 2.3 V Power down protection on inputs and outputs Balanced propagation delays: t PLH t PHL Operating voltage range: V
2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO > -230V Complementary to 2STC5200 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier Description
Order codes Marking Package Packaging. STD2805T4 D2805 DPAK Tape & reel STD D2805 IPAK Tube. June 2007 Rev 1 1/9
Low voltage fast-switching PNP power transistor Preliminary Data Features Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252)
STC04IE170HV. Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A Ω. Features. Application. Description
Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features V CS(ON) I C R CS(ON) 0.7 V 4 A 0.17 Ω High voltage / high current cascode configuration Low equivalent ON resistance
STL128D. High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Integrated antiparallel collector-emitter diode TAB Applications
Order codes Marking Package Packaging 2STF SOT-89 2STN2550 N2550 SOT-223. November 2008 Rev 1 1/8
2STF2550 2STN2550 Low voltage high performance PNP power transistors Preliminary Data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface
ST619LBDR. DC-DC converter regulated 5 V charge pump. Features. Description
DC-DC converter regulated 5 V charge pump Features Regulated 5 V ±4 % charge pump Output current guaranteed over temperature: 20 ma (V I 2 V), 30 ma (V I 3 V) No inductors; very low EMI noise Uses small,
2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 o C Application Audio power amplifier
AN3385 Application note
Application note 50 W + 50 W dual BTL class-d audio amplifier demonstration board based on the TDA7492 Introduction This application note describes the STEVAL-CCA027V1 demonstration board designed for
LM323. Three-terminal 3 A adjustable voltage regulators. Features. Description
Three-terminal 3 A adjustable voltage regulators Features Output current: 3 A Internal current and thermal limiting Typical output impedance: 0.01 W Minimum input voltage: 7.5 V Power dissipation: 30 W
BUL39D. High voltage fast-switching NPN power transistor. Features. Application. Description
High voltage fast-switching NPN power transistor Features Integrated antiparallel collector-emitter diode High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable
STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications
Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic Fast-switching
LD1117Axx. Low drop fixed and adjustable positive voltage regulators. Features. Description
Low drop fixed and adjustable positive voltage regulators Features Low dropout voltage (1.15 V typ. @ I OUT = 1 A, 25 C) Very low quiescent current (5 ma typ. @ 25 C) Output current up to 1 A Fixed output