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1 Features STEVAL-ISVV W dual stage DC-AC converter demonstration board based on the STPNF Nominal input voltage: V Output voltage: Vrms, Hz Output power: kw Efficiency: % Switching frequency: khz (DC-DC); khz (DC-AC) Description The STEVAL-ISVV demonstration board implements a kw dual stage DC-AC converter, suitable for use in battery powered uninterruptible power supplies (UPS) or photovoltaic (PV) stand alone systems. The converter is powered from a low DC input voltage varying from V to V and is capable of supplying up to kw output power on a single phase AC load. These features are met with a dual stage conversion topology including an efficient step-up push-pull DC-DC converter, to produce a regulated high voltage DC bus, and a sinusoidal h-bridge PWM inverter to generate a Hz, Vrms output sine wave. Other relevant features of the proposed system are high power density, high switching frequency, galvanic isolation and efficiency greater than % over a wide output load range. STEVAL-ISVV Data Brief November Rev / For further information contact your local STMicroelectronics sales office.
2 Circuit schematics STEVAL-ISVV Circuit schematics Figure. VIN Converter schematic: the power stage R T T T R C C C C GND T T T TX D D D D R D R M M M M M M C C R R R R GATE A GATE B D L.m C R R C C C G H R Igbt R G H C D C Igbt S H V AC V AC Igbt Igbt G L G L AMv /
3 STEVAL-ISVV Circuit schematics Figure. Schematic of the push-pull control and driving circuit VOUT C R R Figure. PWM LOW/HIGH + + C PWM LOW/HIGH C R C C u U IN - IN+ SYNC OSC CT RT DISCH SS SG VREF OUTB GND OUTA S.DOWN +V PWM B PWM A Inverter control driving circuit schematic IC L LIN VBOOT SD HVG HIN OUT VCC NC DIAG NC CIN LV SG N GND IC L LIN VBOOT SD HVG HIN OUT VCC NC DIAG NC CIN LV SGN GND +VI VC COMP C D C D R RG L R RG L D D RG R RG H R C n D D G H S H S L C G H S H G L S L R +V C C PWM A PWM B R R PWM LOW/HIGH U PA/LTI PWM LOW/HIGH PA/ATI PA/ATPW PA/ATPW PA PA/ATPW PA/ATPWM/ICCD PA/MCO/ICCCLK/BR PA PA OSC/CLK RESET OSC RESE VS STFLITE_SOIC_ Q SD Q BCB Q BCB Q BCB GATE A +V C +V C GATE B AMv VD PB/SS/AI PB/SCK/AI PB/MISO/AI PB/MOSI/AI PB/CLKIN/AI PB/AIN PB/AIN V C AMv /
4 Circuit schematics STEVAL-ISVV Figure. Schematic of the auxiliary power supply section Vin C VC GN VRE F LD U OU SYN IN COM C R L uh Q D C + C + C + R +V C D R V U +V G VIN VOUT N C D C L AMv /
5 STEVAL-ISVV Revision history Revision history Table. Document revision history Date Revision Changes -Nov- Initial release. /
6 STEVAL-ISVV Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America /
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High voltage fast-switching NPN Power transistor General features High voltage and high current capability Low spread of dynamic parameters Low base-drive requirements Very high switching speed High ruggedness
AN4233 Application note
Application note Sound Terminal : a method for measuring the total thermal resistance (R th ) in the final application Introduction By Marco Brugora The purpose of this document is to provide a methodology
2STD1360 2STF1360-2STN1360
2STD1360 2STF1360-2STN1360 Low voltage fast-switching NPN power transistors Features Very low collector-emitter saturation voltage High current gain characteristic Fast-switching speed 4 1 2 3 4 1 3 2
2STR SOT-23 Tape and reel 2STR1230G 130G SOT-23 Tape and reel
Low voltage fast-switching NPN power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface
2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 C Application 1 2 3 Audio power
2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description
Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation voltage High current gain characteristic TAB Fast-switching speed Applications Voltage regulators High