PS9308L, PS9308L2. Preliminary Data Sheet 2.0 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER DESCRIPTION FEATURES APPLICATIONS

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1 . A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER DESCRIPTION A Business Partner of Renesas Electronics Corporation. Preliminary Data Sheet R8DS8EJ Rev.. The PS938L and PS938L are optical coupled isolators containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip. The PS938L and PS938L are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS938L has 8 mm creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP. The PS938L and PS938L are designed specifically for high common mode transient immunity (CMR) and high switching speed. It is suitable for driving IGBTs and MOS FETs. The PS938L is lead bending type (Gull-wing) for surface mounting. The PS938L is lead bending type for long creepage distance (Gull-wing) for surface mount. <R> FEATURES Long creepage distance (8 mm MIN.: PS938L) Half size of 8-pin DIP Peak output current (. A MAX.,. A MIN.) High speed switching (t PLH, t PHL =. μs MAX.) UVLO (Under Voltage Lock Out) protection with hysteresis High common mode transient immunity (CM H, CM L = ± kv/μs MIN.) Embossed tape product : PS938L-E3, PS938L-E3 : pcs/reel Pb-Free product Safety standards UL approved: No. E7 CSA approved: No. CA 39 (CAA, CAN/CSA-C. 66, 69) SEMKO approved (EN 66, EN 69) DIN EN677-- (VDE88-) approved (Option) PIN CONNECTION (Top View) 6 3 SHIELD. Anode. NC 3. Cathode. VEE. VO 6. VCC APPLICATIONS IGBT, Power MOS FET Gate Driver Industrial inverter IH (Induction Heating) The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R8DS8EJ Rev.. Page of

2 PACKAGE DIMENSIONS (UNIT: mm) Lead Bending Type (Gull-wing) For Surface Mount PS938L (.8).8±.3 9.7± ±. 3.±..±..±. 6.8±..7.±.. M.8±. Lead Bending Type (Gull-wing) For Long Creepage Distance (Surface Mount) (.8).8±.3 PS938L.± ±. 3.±..±..±. 6.8±..7.±.. M.7±. R8DS8EJ Rev.. Page of

3 PHOTOCOUPLER CONSTRUCTION Parameter PS938L PS938L Air Distance (MIN.) 7 mm 8 mm Outer Creepage Distance (MIN.) 7 mm 8 mm Isolation Distance (MIN.). mm. mm <R> MARKING EXAMPLE R 938 N3 Company Initial Type Number Assembly Lot No. pin Mark N 3 Week Assembled Year Assembled (Last Digit) Rank Code R8DS8EJ Rev.. Page 3 of

4 <R> ORDERING INFORMATION Part Number Order Number Solder Plating Specification Packing Style Safety Standard Approval Application Part Number * PS938L PS938L-AX Pb-Free pcs (Tape pcs cut) Standard PS938L PS938L-E3 PS938L-E3-AX (Ni/Pd/Au) Embossed Tape products pcs/reel (UL, CSA, PS938L PS938L-AX pcs (Tape pcs cut) SEMKO PS938L PS938L-E3 PS938L-E3-AX Embossed Tape approved) pcs/reel PS938L-V PS938L-V-AX pcs (Tape pcs cut) DIN EN PS938L PS938L-V-E3 PS938L-V-E3-AX Embossed Tape (VDE 88-) pcs/reel approved (Option) PS938L-V PS938L-V-AX pcs (Tape pcs cut) PS938L PS938L-V-E3 PS938L-V-E3-AX Embossed Tape pcs/reel Note: *. For the application of the Safety Standard, following part number should be used. R8DS8EJ Rev.. Page of

5 ABSOLUTE MAXIMUM RATINGS (T A = C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Forward Current I F ma Peak Transient I F (TRAN). A Forward Current (Pulse Width < μs) Reverse Voltage V R V Detector High Level Peak I OH (PEAK). A Output Current * Low Level Peak I OL (PEAK). A Output Current * Supply Voltage (V CC V EE ) to 3 V Output Voltage V O to V CC V Power Dissipation * P C mw Isolation Voltage *3 BV Vr.m.s. Total Power Dissipation * P T 3 mw Operating Frequency * f khz Operating Ambient Temperature T A to + C Storage Temperature T stg to + C Notes: *. Maximum pulse width = μs, Maximum duty cycle =.% *. Reduced to.8 mw/ C at T A = 7 C or more. *3. AC voltage for minute at T A = C, RH = 6% between input and output. Pins -3 shorted together, -6 shorted together. *. Reduced to. mw/ C at T A = 7 C or more. *. I OH (PEAK). A (.3 μs), I OL (PEAK). A (.3 μs) RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage (V CC V EE ) 3 V Forward Current (ON) I F (ON) 7 6 ma Forward Voltage (OFF) V F (OFF).8 V Operating Ambient Temperature T A C R8DS8EJ Rev.. Page of

6 ELECTRICAL CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS, V EE = GND, unless otherwise specified) Parameter Symbol Conditions MIN. TYP. * MAX. Unit Diode Forward Voltage V F I F = ma, T A = C..6.8 V Reverse Current I R V R = 3 V, T A = C μa Input Capacitance C IN f = MHz, V F = V, T A = C 3 pf Detector High Level Output Current I OH V O = (V CC V) *.. A Coupled V O = (V CC V) *3. Low Level Output Current I OL V O = (V EE +. V) *.. A V O = (V EE + V) *3. High Level Output Voltage V OH I O = ma * V CC 3. V CC.3 V Low Level Output Voltage V OL I O = ma.. V High Level Supply Current I CCH I F = ma, V O = open.. ma Low Level Supply Current I CCL V F = to.8 V, V O = open.. ma UVLO Threshold V UVLO+ V o > V, I F = ma UVLO Hysteresis Threshold Input Current (L H) Threshold Input Voltage (H L) V UVLO UVLO HYS..3 I FLH I O = ma, V O > V.8. ma V FHL I O = ma, V O < V.8 V Notes: *. Typical values at T A = C. *. Maximum pulse width = μs, Maximum duty cycle =.%. *3. Maximum pulse width = μs, Maximum duty cycle =.%. *. V OH is measured with the DC load current in this testing. (Maximum pulse width = ms, Maximum duty cycle = %) V R8DS8EJ Rev.. Page 6 of

7 <R> SWITCHING CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS, V EE = GND, unless otherwise specified) Parameter Symbol Conditions MIN. TYP. * MAX. Unit Propagation Delay Time (L H) t PLH R g = Ω, C g = nf,.8. μs Propagation Delay Time (H L) t PHL f = khz,.. μs Pulse Width Distortion (PWD) t PHL t PLH Duty Cycle = %,.. μs Propagation Delay Time t PHL t PLH I F = ma.. μs (Difference Between Any Two Products) Rise Time t r ns Fall Time t f ns Common Mode Transient Immunity at High Level Output CM H T A = C, I F = ma, V CC = 3 V, V CM =. kv, V O (MIN.) = 6 V kv/μs Common Mode Transient Immunity at Low Level Output Note: CM L *. Typical values at T A = C. T A = C, I F = ma, V CC = 3 V, V CM =. kv, V O (MAX.) = V kv/μs R8DS8EJ Rev.. Page 7 of

8 TEST CIRCUIT Fig. IOH Test Circuit Fig. IOL Test Circuit 6 6. μf V. μf IOL VCC = to 3 V 3 IF = 7 to 6 ma SHIELD IOH VCC = to 3 V 3 SHIELD. V Fig. 3 VOH Test Circuit Fig. VOL Test Circuit IF = 7 to 6 ma SHIELD. μf VOH VCC = to 3 V ma 3 SHIELD. μf VOL ma VCC = to 3 V Fig. UVLO Test Circuit Fig. 6 IFLH Test Circuit IF = ma μf VO > V VCC IF 3. μf VO > V VCC = to 3 V SHIELD SHIELD R8DS8EJ Rev.. Page 8 of

9 Fig. 7 tplh, tphl, tr, tf Test Circuit and Wave Forms 6 IF = ma khz % DUTY CYCLE 3 SHIELD. μf VO Ω nf VCC = to 3 V IF VOUT tplh tr tf tphl 9% % % Fig. 8 CMR Test Circuit and Wave Forms IF A 6 VCM B 3 SHIELD VCM =. kv. μf VO VCC = 3 V V VO (Switch A: IF = ma) VO (Switch B: IF = ma) Δt δ V δ t = VCM Δt VOH 6 V V VOL R8DS8EJ Rev.. Page 9 of

10 <R> TYPICAL CHARACTERISTICS (T A = C, unless otherwise specified) DETECTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 3 Detector Power Dissipation PC (mw) Total Power Dissipation PT (mw) Ambient Temperature TA ( C) Ambient Temperature TA ( C) Forward Current IF (ma). FORWARD CURRENT vs. FORWARD VOLTAGE TA = + C + C +8 C + C + C C C Threshold Input Current IFLH (ma) 3 THRESHOLD INPUT CURRENT vs. AMBIENT TEMPERATURE VCC = 3 V, VO > V, IO = ma Forward Voltage VF (V) 6 8 Ambient Temperature TA ( C) Output Voltage VO (V) 3 3 VCC = 3 V OUTPUT VOLTAGE vs. FORWARD CURRENT 3 Forward Current IF (ma) High Level Output Voltage Supply Voltage VOH VCC (V) HIGH LEVEL OUTPUT VOLTAGE SUPPLY VOLTAGE vs. AMBIENT TEMPERATURE. VCC = 3 V,. IF = ma, IO = ma Ambient Temperature TA ( C) Remark The graphs indicate nominal characteristics. R8DS8EJ Rev.. Page of

11 High Level Output Current IOH (A) 3 HIGH LEVEL OUTPUT CURRENT vs. AMBIENT TEMPERATURE VCC = 3 V, IF = ma VO = VCC V VO = VCC V Low Level Output Current IOL (A) 6 3 LOW LEVEL OUTPUT CURRENT vs. AMBIENT TEMPERATURE VO = VEE+ V VO = VEE+. V VCC = 3 V, IF = ma Ambient Temperature TA ( C) Ambient Temperature TA ( C) LOW LEVEL OUTPUT VOLTAGE vs. AMBIENT TEMPERATURE SUPPLY CURRENT vs. AMBIENT TEMPERATURE Low Level Output Voltage VOL (V) VCC = 3 V, IF = ma, IO = ma High Level Supply Current ICCH (ma) Low Level Supply Current ICCL (ma).... VCC = 3 V, VO = OPEN ICCH (IF = ma) ICCL (IF = ma) High Level Output Voltage Supply Voltage VOH VCC (V) VCC = 3 V, IF = ma Ambient Temperature TA ( C) HIGH LEVEL OUTPUT VOLTAGE SUPPLY VOLTAGE vs. HIGH LEVEL OUTPUT CURRENT TA = C TA = C TA = C High Level Output Current IOH (A) Low Level Output Voltage VOL (V) VCC = 3 V, IF = ma Ambient Temperature TA ( C) LOW LEVEL OUTPUT VOLTAGE vs. LOW LEVEL OUTPUT CURRENT TA = C TA = C TA = C Low Level Output Current IOL (A) Remark The graphs indicate nominal characteristics. R8DS8EJ Rev.. Page of

12 High Level Supply Current ICCH (ma) Low Level Supply Current ICCL (ma).... VO = OPEN SUPPLY CURRENT vs. SUPPLY VOLTAGE ICCH (IF = ma) ICCL (IF = ma). 3 Supply Voltage VCC (V) Propagation Delay Time tphl, tplh (ns), Pulse Width Distortion tphl tplh (ns) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. AMBIENT TEMPERATURE VCC = 3 V, IF = ma, Rg = Ω, Cg = nf, f = khz, Duty cycle = % tphl tplh PWD 6 8 Ambient Temperature TA ( C) Propagation Delay Time tphl, tplh (ns), Pulse Width Distortion tphl tplh (ns) Propagation Delay Time tphl, tplh (ns), Pulse Width Distortion tphl tplh (ns) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. FORWARD CURRENT VCC = 3 V, Rg = Ω, Cg = nf, f = khz, Duty Cycle = % tplh tphl PWD Forward Current IF (ma) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. LOAD CAPACITANCE VCC = 3 V, IF = ma, Rg = Ω, f = khz, Duty Cycle = % tphl tplh PWD 3 Load Capacitance Cg (nf) Propagation Delay Time tphl, tplh (ns), Pulse Width Distortion tphl tplh (ns) Propagation Delay Time tphl, tplh (ns), Pulse Width Distortion tphl tplh (ns) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. SUPPLY VOLTAGE 3 IF = ma, Rg = Ω, Cg = nf, f = khz, Duty Cycle = % tphl VCC = 3 V, IF = ma, Cg = nf, f = khz, Duty Cycle = % tplh PWD Supply Voltage VCC (V) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. LOAD RESISTANCE tphl tplh PWD 3 Load Resistance Rg (Ω) Remark The graphs indicate nominal characteristics. R8DS8EJ Rev.. Page of

13 Output Voltage VO (V) OUTPUT VOLTAGE vs. SUPPLY VOLTAGE POWER CONSUMPTION PER CYCLE vs. LOAD RESISTANCE IF = ma, VEE = GND 6 8 UVLOHYS Qg = nc 6 3 Qg = nc VUVLO VUVLO+ (. V) (.3 V) Qg = nc 3 Supply Voltage VCC VEE (V) Load Resistance Rg (Ω) Power Consumption Per Cycle ESW ( J) μ 8 7 Remark The graphs indicate nominal characteristics. R8DS8EJ Rev.. Page 3 of

14 <R> TAPING SPECIFICATIONS (UNIT: mm) Outline and Dimensions (Tape).±..± ±.. MAX. 7.±. 6.±.3.± ±..8±..3.±. Tape Direction PS938L-E3 Outline and Dimensions (Reel).±..±. 3.±. R..±.8 33±. ±. 7.±..±. Packing: pcs/reel R8DS8EJ Rev.. Page of

15 Outline and Dimensions (Tape).±..± ±.. MAX ±..8±..±..±..±.3.±..3 Tape Direction PS938L-E3 Outline and Dimensions (Reel).±..±. 3.±. R..±.8 33±. ±..±. 9.±. Packing: pcs/reel R8DS8EJ Rev.. Page of

16 RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) D B C A Part Number Lead Bending A B C D PS938L lead bending type (Gull-wing) for surface mount PS938L lead bending type (Gull-wing) for long creepage distance (surface mount) R8DS8EJ Rev.. Page 6 of

17 NOTES ON HANDLING (UNIT: mm). Recommended soldering conditions () Infrared reflow soldering Peak reflow temperature 6 C or below (package surface temperature) Time of peak reflow temperature seconds or less Time of temperature higher than C 6 seconds or less Time to preheat temperature from to 8 C ± 3 s Number of reflows Three Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of. Wt% is recommended.) Recommended Temperature Profile of Infrared Reflow Package Surface Temperature T ( C) C ±3 s (preheating) 8 C (heating) to s to 6 s 6 C MAX. C Time (s) () Wave soldering Temperature 6 C or below (molten solder temperature) Time seconds or less Preheating conditions C or below (package surface temperature) Number of times One (Allowed to be dipped in solder including plastic mold portion.) Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of. Wt% is recommended.) (3) Soldering by Soldering Iron Peak Temperature (lead part temperature) 3 C or below Time (each pins) 3 seconds or less Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of. Wt% is recommended.) (a) Soldering of leads should be made at the point. to. mm from the root of the lead () Cautions Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. R8DS8EJ Rev.. Page 7 of

18 . Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler s input and output at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. USAGE CAUTIONS. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static electricity when handling.. Board designing () By-pass capacitor of more than. μf is used between V CC and GND near device. Also, ensure that the distance between the leads of the photocoupler and capacitor is no more than mm. () When designing the printed wiring board, ensure that the pattern of the IGBT collectors/emitters is not too close to the input block pattern of the photocoupler. If the pattern is too close to the input block and coupling occurs, a sudden fluctuation in the voltage on the IGBT output side might affect the photocoupler s LED input, leading to malfunction or degradation of characteristics. (If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to the abovementioned coupling, design the input-side circuit so that the bias of the LED is reversed, within the range of the recommended operating conditions, and be sure to thoroughly evaluate operation.) (3) Pin (which is an NC * pin) can either be connected directly to the GND pin on the LED side or left open. Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may degrade the internal noise environment of the device. Note: *. NC: Non-Connection (No Connection). 3. Make sure the rise/fall time of the forward current is. μs or less.. In order to avoid malfunctions, make sure the rise/fall slope of the supply voltage is 3 V/μs or less.. Avoid storage at a high temperature and high humidity. R8DS8EJ Rev.. Page 8 of

19 <R> SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Spec. Unit Climatic test class (IEC 668-/DIN EN 668-) // Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) U pr =.6 U IORM., P d < pc Test voltage (partial discharge test, procedure b for all devices) U pr =.87 U IORM., P d < pc U IORM U pr 3 88 V peak V peak U pr 9 V peak Highest permissible overvoltage U TR 8 V peak Degree of pollution (DIN EN 666- VDE Part ) Comparative tracking index (IEC 6/DIN EN 6 (VDE 33 Part )) CTI 7 Material group (DIN EN 666- VDE Part ) III a Storage temperature range T stg to + C Operating temperature range T A to + C Isolation resistance, minimum value V IO = V dc at T A = C V IO = V dc at T A MAX. at least C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current I F, Psi = ) Power (output or total power dissipation) Isolation resistance V IO = V dc at T A = Tsi Ris MIN. Ris MIN. Tsi Isi Psi Ris MIN. Ω Ω C ma mw Ω R8DS8EJ Rev.. Page 9 of

20 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below.. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials.. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. Do not burn, destroy, cut, crush, or chemically dissolve the product. Do not lick the product or in any way allow it to enter the mouth. R8DS8EJ Rev.. Page of

21 Revision History Data Sheet Description Rev. Date Page Summary. Aug 3, First edition issued. p. Modification of FEATURES p.3 Modification of MARKING EXAMPLE p. Modification of ORDERING INFORMATION p.7 Modification of SWITCHING CHARACTERISTICS pp. to 3 Addition of TYPICAL CHARACTERISTICS pp. to Modification of TAPING SPECIFICATIONS p.9 Modification of SPECIFICATION OF VDE MARKS LICENCE DOCUMENT All trademarks and registered trademarks are the property of their respective owners. C -

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