Product Change Notification

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WEB PCN - PCN FORM Seite 1 von 3 Product Change Notification Product Group: Opto Sensors & IRDC 13-AUG-2018 / PCN OSI-1005-2017 Rev.

It has an approximately 20% increased radiant intensity, while the forward voltage is slightly reduced. This allows for an overall reduction in power consumption.

1 WEB PCN - PCN FORM Seite 1 von 3 Product Change Notification Product Group: Opto Sensors & IRDC 13-AUG-2018 / PCN OSI Rev. 0 TITLE: VSMY2850(G/RG) / VSMY2853(G/RG/SL): Change in Chip DESCRIPTION OF CHANGE: A new chip generation will be introduced in VSMY285* dome lens products. It has an approximately 20% increased radiant intensity, while the forward voltage is slightly reduced. This allows for an overall reduction in power consumption. A detailed comparison of the performance is shown in the attached file, named "PCN OSI change description.pdf". CLASSIFICATION OF CHANGE: REASON FOR CHANGE: EXPECTED INFLUENCE ON QUALITY RELIABILITY / PERFORMANCE: PRODUCT CATEGORY: Direct Materials (Major) Introduction of new chip generation with improved electro-optical performance. No influence on quality and reliability expected. Performance increase with about 20% higher radiant intensity and slightly lower forward voltage. Infrared Emitters PART NUMBERS / SERIES / FAMILIES AFFECTED: VSMY2850G VSMY2850G1 VSMY2850RG VSMY2853G VSMY2853RG VSMY2853SL VSMY2853SLS VISHAY BRAND(s): TIME SCHEDULE: Start Shipment Date: VISHAY SEMICONDUCTORS 01-JAN-2019 Annotations about time schedule: SAMPLES AVAILABLE BEGINNING: 01-AUG-2018 We need samples for evaluation: Yes No If Yes return this form to contact information below. PRODUCT IDENTIFICATION: QUALIFICATION DATA: Date Code available on request This PCN is considered approved, without further notification, unless we receive specific customer concerns before: 31-OCT-2018 or as specified by contract. ISSUED BY: PM: Andreas Puetz, Product Marketing Opto Phone: andreas.puetz@vishay.com For further Information, please contact your regional Vishay office. CONTACT INFORMATION: VISHAY Intertechnology Asia Pte. Ltd. Business Marketing Asia/Japan 25 Tampines Street 92 Keppel Building # Singapore Phone: Fax: VISHAY Intertechnologies, Inc. Business Marketing The Americas - Opto 2201 Laurelwood Road M/S 55 Santa Clara, CA USA Phone: VISHAY Semiconductor GmbH Business Marketing Europe Opto Theresienstr. 2 D Heilbronn Germany Phone: Fax:

2 WEB PCN - PCN FORM Seite 2 von Fax:

3 WEB PCN - PCN FORM Seite 3 von Product Change Notification Product Group: Opto Sensors & IRDC 13-AUG-2018 / PCN OSI Rev. 0 Attached Part Number List: Material List PCN OSI VSMY2850G VSMY2850G1 VSMY2850RG VSMY2850RG1 VSMY2853G VSMY2853RG VSMY2853SL VSMY2853SLS

4 Material List PCN OSI VSMY2850G VSMY2850G1 VSMY2850RG VSMY2850RG1 VSMY2853G VSMY2853RG VSMY2853SL VSMY2853SLS

5 Sold-to name Country City material Customer material TTI Inc. DE Maisach - Gernlinden VSMY2850G Q TTI Inc. DE Maisach - Gernlinden VSMY2850G TTI Inc. DE Maisach - Gernlinden VSMY2850G Q TTI Inc. DE Maisach - Gernlinden VSMY2850G TTI Inc. DE Maisach - Gernlinden VSMY2850G VOPVSMY2850G TTI Inc. DE Maisach - Gernlinden VSMY2850G Q TTI Inc. DE Maisach - Gernlinden VSMY2850G TTI Inc. DE Maisach - Gernlinden VSMY2850RG TTI Inc. DE Maisach - Gernlinden VSMY2850RG VOPVSMY2850RG TTI Inc. DE Maisach - Gernlinden VSMY2853G VOPVSMY2853G TTI Inc. DE Maisach - Gernlinden VSMY2853G TTI Inc. DE Maisach - Gernlinden VSMY2853RG VOPVSMY2853RG TTI Inc. DE Maisach - Gernlinden VSMY2853RG TTI Inc. DE Maisach - Gernlinden VSMY2853RG Q TTI Inc. DE Maisach - Gernlinden VSMY2853SL VOPVSMY2853SL

VSMY285* : CHANGE IN CHIP PCN OSI-1005-2017 2018

7 DATASHEET CHANGES VSMY2850RG / VSMY2850G After PCN Before PCN Basic Characteristics Parameter Test condition Symbol Min. Typ. Max. Unit Symbol Min. Typ. Max. Unit Forward Voltage = 100 ma, t P = 20 ms V F V V F V = 1 A, t P = 100 µs V F 2.8 V V F 2.9 V Temperature Coefficient of V F = 100 ma TK VF -1.5 mv/k -1.6 mv/k Junction Capacitance V R = 0 V, f = 1 MHz, E = 0 50 pf 125 pf I Radiant Intensity F = 100 ma, t P = 20 ms I e mw/sr I e mw/sr = 1 A, t P = 100 µs I e 1000 mw/sr I e 850 mw/sr Temperature Coefficient of radiant power = 100 ma TK ɸe %/K TK ɸe -0.2 %/K VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.

8 DATASHEET CHANGES VSMY2853RG / VSMY2853G / VSMY2853SL After PCN Before PCN Basic Characteristics Parameter Test condition Symbol Min. Typ. Max. Unit Symbol Min. Typ. Max. Unit Forward Voltage Temperature Coefficient of V F = 100 ma, t P = 20 ms V F V V F V = 1 A, t P = 100 µs V F 2.8 V V F 2.9 V = 1 ma TK VF - mv/k -1.5 mv/k = 10 ma TK VF - mv/k -1.3 mv/k = 100 ma TK VF -1.5 mv/k - mv/k Junction Capacitance V R = 0 V, f = 1 MHz, E = 0 50 pf 125 pf Radiant Intensity Temperature Coefficient of radiant power = 100 ma, t P = 20 ms I e mw/sr I e mw/sr = 1 A, t P = 100 µs I e 350 mw/sr I e 300 mw/sr = 100 ma TK ɸe %/K TK ɸe %/K 2018 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED. 3

9 TIMELINE & CONTACT Start shipment date: week 01 / 2019 The change is indicated by the date code on the label. Sample label: 2017 = year 45 = week Contact: Andreas Puetz, PhD Product Marketing Sensors andreas.puetz@vishay.com 2018 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED. 4

RCV - High Voltage Thick Film Chip Resistors Short Time Overload test

Product Group: Draloric / Beyschlag Resistors / Nov 21, 2016 / PCN-DBR-009-2016 Rev0 RCV - High Voltage Thick Film Chip Resistors Short Time Overload test DESCRIPTION OF CHANGE: RCV e3 product series pass