High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW

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1 High Speed Infrared Emitting Diodes, 9 nm, GaAlAs, MQW DESCRIPTION is an infrared, 9 nm, side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (SMD). APPLICATIONS Remote control IR touch panels FEATURES Package type: surface mount Package form: side view Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3 Peak wavelength: p = 9 nm High reliability High radiant power High radiant intensity Angle of half intensity: = ± 25 Low forward voltage Suitable for high pulse current operation Package matches with detector VEMD223SLX1 and VEMT223SLX1 Floor life: 4 weeks, MSL 2a, acc. J-STD-2 Material categorization: For definitions of compliance please see PRODUCT SUMMARY COMPONENT I e (mw/sr) (deg) p (nm) t r (ns) 2 ± Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Tape and reel MOQ: 3 pcs, 3 pcs/reel Side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 5 V Forward current I F ma Surge forward current t p = μs I FSM 5 ma Power dissipation P V 16 mw Junction temperature T j C Operating temperature range T amb - to + 85 C Storage temperature range T stg - to + C Soldering temperature according figure 9, J-STD-2 T sd 26 C Thermal resistance junction/ambient J-STD-51, leads 7 mm, soldered on PCB R thja 25 K/W Rev. 1., 7-Feb-13 1 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 P V - Power Dissipation (mw) R thja = 25 K/W T amb - Ambient Temperature ( C) I F - Forward Current (ma) R thja = 25 K/W T amb - Ambient Temperature ( C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I F = ma, t p = 2 ms V F V Forward voltage I F = 5 ma, t p = μs V F 1.8 V Temperature coefficient of V F I F = 1 ma TK VF mv/k Reverse current V R = 5 V I R 1 μa Junction capacitance V R = V, f = 1 MHz, E = mw/cm 2 C J 21 pf Radiant intensity I F = ma, t p = 2 ms I e mw/sr I F = 5 ma, t p = μs I e 9 mw/sr Radiant power I F = ma, t p = 2 ms e mw Temperature coefficient of radiant power I F = 1 ma TK e %/K Angle of half intensity ± 25 deg Peak wavelength I F = 3 ma p nm Spectral bandwidth I F = 3 ma 25 nm Temperature coefficient of p I F = 3 ma TK p.25 nm/k Rise time I F = ma, 2 % to 8 % t r 15 ns Fall time I F = ma, 2 % to 8 % t f 15 ns Cut-off frequency I DC = 7 ma, I AC = 3 ma pp f c 23 MHz Rev. 1., 7-Feb-13 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 BASIC CHARACTERISTICS (T amb = 25 C, unless otherwise specified) I F - Forward Current (ma) t p = µs V F - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage I e rel - Relative Radiant Intensity (%) 18 I F = 1 ma I F = ma 8 6 t p = 2 ms T amb - Ambient Temperature ( C) Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature V F, rel - Relative Forward Voltage (%) I F = ma I F = 1 ma t p = 2 ms I F = 1 ma T amb - Ambient Temperature ( C) Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Φ e rel - Relative Radiant Power (%) 9 8 I F = 3 ma λ - Wavelength (nm) Fig. 7 - Relative Radiant Power vs. Wavelength I e - Radiant Intensity (mw/sr) t p = µs I F - Forward Current (A) I e rel - Relative Radiant Intensity ϕ - Angular Displacement Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Rev. 1., 7-Feb-13 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 SOLDER PROFILE Temperature ( C) C 2 C 217 C max. 12 s max. ramp up 3 C/s max. 26 C 245 C max. 3 s max. s max. ramp down 6 C/s Time (s) Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-2 DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: T amb < 3 C, RH < 6 % Moisture sensitivity level 2a, acc. to J-STD-2. DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-2 or label. Devices taped on reel dry using recommended conditions 192 h at C (+ 5 C), RH < 5 %. PACKAGE DIMENSIONS in millimeters: Rev. 1., 7-Feb-13 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 TAPING AND REEL DIMENSIONS in millimeters: Rev. 1., 7-Feb-13 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 217 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-17 1 Document Number: 9

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