High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

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1 TSHF62 Vishay Semiconductors High Speed Infrared Emitting Diode, 89 nm, GaAlAs Double Hetero DESCRIPTION TSHF62 is an infrared, 89 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES Package type: leaded Package form: T-¾ Dimensions (in mm): 5 Peak wavelength: λ p = 89 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± Low forward voltage Suitable for high pulse current operation High modulation bandwidth: f c = 2 MHz Good spectral matching with Si photodetectors Compliant to RoHS directive 22/95/EC and in accordance to WEEE 22/96/EC Halogen-free according to IEC definition APPLICATIONS Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK - coded, 45 khz or.3 MHz) Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT I e (mw/sr) ϕ (deg) λ P (nm) t r (ns) TSHF62 8 ± 89 3 Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHF62 Bulk MOQ: 4 pcs, 4 pcs/bulk T-¾ MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 5 V Forward current I F ma Peak forward current t p /T =.5, t p = µs I FM 2 ma Surge forward current t p = µs I FSM.5 A Power dissipation P V 6 mw Junction temperature T j C Operating temperature range T amb - 4 to + 85 C Storage temperature range T stg - 4 to + C Soldering temperature t 5 s, 2 mm from case T sd 26 C Thermal resistance junction/ambient J-STD-5, leads 7 mm soldered on PCB R thja 23 K/W Document Number: 8734 For technical questions, contact: emittertechsupport@vishay.com Rev..2, 25-Jun-9

2 TSHF62 Vishay Semiconductors High Speed Infrared Emitting Diode, 89 nm, GaAlAs Double Hetero 8 2 P V - Power Dissipation (mw) R thja = 23 K/W I F - Forward Current (ma) R thja = 23 K/W T amb - Ambient Temperature ( C) Fig. - Power Dissipation Limit vs. Ambient Temperature T amb - Ambient Temperature ( C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I F = ma, t p = 2 ms V F.4.6 V Forward voltage I F = A, t p = µs V F 2.3 V Temperature coefficient of V F I F = ma TK VF -.8 mv/k Reverse current V R = 5 V I R µa Junction capacitance V R = V, f = MHz, E = C j 25 pf Radiant intensity I F = ma, t p = 2 ms I e mw/sr I F = A, t p = µs I e 8 mw/sr Radiant power I F = ma, t p = 2 ms φ e 5 mw Temperature coefficient of φ e I F = ma TKφ e -.35 %/K Angle of half intensity ϕ ± deg Peak wavelength I F = ma λ p 89 nm Spectral bandwidth I F = ma Δλ 4 nm Temperature coefficient of λ p I F = ma TKλ p.25 nm/k Rise time I F = ma t r 3 ns Fall time I F = ma t f 3 ns Cut-off frequency I DC = 7 ma, I AC = 3 ma pp f c 2 MHz Virtual source diameter d 3.7 mm For technical questions, contact: emittertechsupport@vishay.com Document Number: Rev..2, 25-Jun-9

3 High Speed Infrared Emitting Diode, 89 nm, GaAlAs Double Hetero TSHF62 Vishay Semiconductors BASIC CHARACTERISTICS I F - Forward Current (ma) t P /T =. T amb < 5 C e - Radiant Power (mw).. 63 t P - Pulse Duration (ms) Fig. 3 - Pulse Forward Current vs. Pulse Duration. 697 I F - Forward Current (ma) Fig. 6 - Radiant Power vs. Forward Current.25 I F - Forward Current (ma) t P = µs t P /T =. Φ e rel - Relative Radiant Power V 8873 F - Forward Voltage (V) λ - Wavelength (nm) Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Power vs. Wavelength 2 3 I e - Radiant Intensity (mw/sr) t P =. ms I e rel - Relative Radiant Intensity ϕ - Angular Displacement 223 I F - Forward Current (ma) Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 8734 For technical questions, contact: emittertechsupport@vishay.com Rev..2, 25-Jun-9 3

4 TSHF62 Vishay Semiconductors High Speed Infrared Emitting Diode, 89 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters A C 5.8 ±.5 R 2.49 (sphere) 35.5 ± ± ±.5 (4.7) min. <.7 Area not plane 5 ± technical drawings according to DIN specifications 2.54 nom Issue: 8; For technical questions, contact: emittertechsupport@vishay.com Document Number: Rev..2, 25-Jun-9

5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8-Jul-8

High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero

TSFF52 High Speed Infrared Emitting Diode, RoHS Compliant, 87 nm, GaAlAs Double Hetero DESCRIPTION 94 839 TSFF52 is an infrared, 87 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant