BAL-2593D5U 50 / 50+j50 balun transformer for 2.45 GHz ISM band Features Application Description Benefits
|
|
|
- Ira Perry
- 5 years ago
- Views:
Transcription
1 50 / 50+j50 balun transformer for 2.45 GHz ISM band Features 50 Ω nominal Input / 50+j50 output differential impedance Lo insertion loss Lo amplitude imbalance Lo phase imbalance Small footprint: BAL-2593D5U < 1.5 mm² Benefits Very lo profile (<700 µm) High RF performances RF components count and area reduction Application Figure 1. Top vie A2 Flip Chip 4 bumps A1 Bluetooth balun for STL2592/2593/2500D transceiver Portable applications Description The BAL-2593D5U is a balun designed to transform a single ended signal to differential signals in Bluetooth applications. B2 Bump Name A1 BAL- A2 GND B1 BAL+ B2 SE B1 Description RF balanced ouput Ground RF balanced ouput RF input This BAL-2593D5U, ith less than 1.2 db insertion losses in the bandidth 2400 MHz to 2500 MHz, has been customized for STLC2592/2593/2500D Bluetooth transceivers and specific requirements for S CC22 parameter at 2f0 (4.88 GHz). Figure 2. Application schematic WLAN PA + SP3T The BAL-2593D5U has been designed using STMicroelectronics IPD (integrated passive device) technology on non conductive glass substrate to optimize RF performances. 2.4G Antenna Band Pass Filter BT Balun BT RFIC TM: IPAD is a trademark of STMicroelectronics. October 2009 Doc ID Rev 1 1/8.st.com 8.BDTIC.com/ST
2 Electrical characteristics BAL-2593D5U 1 Electrical characteristics Table 1. Absolute maimum ratings (limiting values) Symbol Test condition Min. Typ. Ma. Unit P IN Input poer R FIN - 10 dbm V ESD ESD ratings MIL STD883C (HBM: C = 100 pf, R = 1.5kΩ, air discharge) ESD ratings machine model (MM: C = 200 pf, R = 25 Ω, L = 500 nh) ESD ratings, charged device model (JESD22-C101D) V T OP Operating temperature C Table 2. Electrical characteristics (T amb = 25 C) impedances Symbol Test condition Min. Typ. Ma. Unit Z OUT Nominal differential output impedance j50 - Ω Z IN Nominal input impedance Ω Table 3. RF performance (T amb = 25 C) Symbol Test condition Min. Typ. Ma. Unit F Frequency range (bandidth) MHz I L Insertion loss in bandidth db R L Return loss in bandidth db Φ imb Phase imbalance Measured on EVB ith A imb Amplitude imbalance GND on L db 2/8 Doc ID Rev 1.BDTIC.com/ST
3 Electrical characteristics Figure 3. Insertion loss (T amb = 25 C) Figure 4. Return loss (T amb = 25 C) freq. Hz E9 2.35E9 2.40E9 2.45E9 2.50E9 2.55E9 2.60E9 2.65E9 2.70E freq. Hz E9 2.35E9 2.40E9 2.45E9 2.50E9 2.55E9 2.60E9 2.65E9 2.70E9 Figure 5. Amplitude imbalance (T amb = 25 C) Figure 6. Phase imbalance (T amb = 25 C) freq. Hz E9 2.35E9 2.40E9 2.45E9 2.50E9 2.55E9 2.60E9 2.65E9 2.70E9 freq. Hz E9 2.35E9 2.40E9 2.45E9 2.50E9 2.55E9 2.60E9 2.65E9 2.70E9 Figure 7. S f0 (T amb = 25 C), freq ( GHz to GHz) Figure 8. S 2f0 (T amb = 25 C), freq ( GHz to GHz) 50 + j50 Doc ID Rev 1 3/8.BDTIC.com/ST
4 Electrical characteristics BAL-2593D5U Figure 9. Recommend land pattern (used for balun characterization) 35 µm 76 µm 18 µm L1 L2 540 µm GND under the die 18 µm 76 µm 35 µm L3 L4 Figure 10. Eample of transceiver application board land pattern 4/8 Doc ID Rev 1.BDTIC.com/ST
5 Package information 2 Package information Epoy meets UL94, V0 Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at:.st.com. ECOPACK is an ST trademark. Table 4. Package dimensions (values) Dimensions (mm) Ref. Min. Typ. Ma. A A A b D D E E SE $ Figure 11. Package dimensions (definitions) b E A2 A1 SE E1 B2 B1 D $ A1 A A2 D1 Doc ID Rev 1 5/8.BDTIC.com/ST
6 Package information BAL-2593D5U Figure 12. Footprint Figure 13. Marking Copper pad Diameter: 250 µm recommended, 300 µm ma Solder stencil opening: 330 µm Solder mask opening recommendation: 340 µm min for 315 µm copper pad diameter Dot, ST logo ECOPACK Grade = marking z = manufacturing location y = datecode (y = year = eek) y z Figure 14. Flip Chip tape and reel specification Dot identifying pin A1 location 0.20 ± ± ± 0.1 Ø 1.50 ± ± ± ± ± 0.05 y y y z z z 0.73± ± ± 0.05 All dimensions in mm User direction of unreeling Note: More packing information is available in the applications note: AN 2348: Flip Chip: package description and recommendations for use 6/8 Doc ID Rev 1.BDTIC.com/ST
7 Ordering information 3 Ordering information Table 5. Ordering information Order code Marking Package Weight Base qty Delivery mode BAL-2593D5U RM Flip Chip 1.75 mg 5000 Tape and reel 4 Revision history Table 6. Document revision history Date Revision Changes 12-Oct Initial release. Doc ID Rev 1 7/8.BDTIC.com/ST
8 Please Read Carefully: Information in this document is provided solely in connection ith ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, ithout notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability hatsoever relating to the choice, selection or use of the ST products and services described herein. No license, epress or implied, by estoppel or otherise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a arranty covering the use in any manner hatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products ith provisions different from the statements and/or technical features set forth in this document shall immediately void any arranty granted by ST for the ST product or service described herein and shall not create or etend in any manner hatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective oners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Seden - Sitzerland - United Kingdom - United States of America.st.com 8/8 Doc ID Rev 1.BDTIC.com/ST
CPL-WB-02D3. Wide-band, directional coupler with integrated 50 ohm loaded isolated port. Features. Applications. Description.
CPL-WB-02D3 Wide-band, directional coupler with integrated 50 ohm loaded isolated port Datasheet production data Features 50 Ω nominal input / output impedance Wide operating frequency range (2400 MHz
DCPL-WB-02D3. Wide-band, dual-path directional coupler with integrated 50 ohm loaded isolated port. Features. Applications. Description.
Wide-band, dual-path directional coupler with integrated 50 ohm loaded isolated port Datasheet production data Features 50 Ω nominal input / output impedance Wide operating frequency range: 2400 MHz-5850
CPL-WB-00C2. Wide band directional coupler with ISO port. Features. Applications. Description. Benefits
Wide band directional coupler with ISO port Features 50 Ω nominal input / output impedance Wide operating frequency range (824 MHz to 2170 MHz) Low Insertion Loss (< 0.2 db) 34 db typical coupling factor
BALF D3. 50 ohm nominal input / conjugate match balun for STLC2690, with integrated harmonic filter. Description. Features.
50 ohm nominal input / conjugate match balun for STLC2690, with integrated harmonic filter Description Datasheet production data Features 50 Ω nominal input / matched output differential impedance Integrated
CPL-WB-01D3. Wide-band directional coupler with ISO port. Features. Applications. Description. Benefits
Wide-band directional coupler with ISO port Features 50 Ω nominal input / output impedance Wide operating frequency range (824 MHz to 2170 MHz) Low insertion loss (< 0.2 db) 26 db coupling factor High
50 Ω nominal input / conjugate match balun to nrf51422-qfaa, nrf24le1, nrf51822-qfaa/ab, with integrated harmonic filter.
50 Ω nominal input / conjugate match balun to nrf51422-qfaa, nrf24le1, nrf51822-qfaa/ab, with integrated harmonic filter Description Datasheet production data Features 50 Ω nominal input / conjugate match
DCPL-WB-00D3. Wide-band, dual-path directional coupler with ISO port. Features. Description. Applications. Benefits
Wide-band, dual-path directional coupler with ISO port Features 50 Ω nominal input / output impedance Wide operating frequency range: 824 MHz-2170 MHz Low insertion loss (< 0.2 db) High directivity (>
BALF-SPI-01D3. 50 ohm nominal input / conjugate match balun to Spirit1, with integrated harmonic filter. Features. Applications. Description.
50 ohm nominal input / conjugate match balun to Spirit1, with integrated harmonic filter Features Datasheet production data 50 Ω nominal input / conjugate match to Spirit1 Low insertion loss Low amplitude
ESDARF03-1BF3. Ultralow capacitance ESD protection for antenna. Features. Applications. Description. Benefits. Complies with the following standards
Ultralow capacitance ESD protection for antenna Features ultralow diode capacitance 0.6 pf Single line, protected against 15 kv ESD breakdown voltage V BR = 6.0 V min. Flip Chip 400 µm pitch, lead-free
BALF-NRG-01D3. 50 Ω / conjugate match to BlueNRG balun transformer and integrated filtering. Description. Features. Applications.
50 Ω / conjugate match to BlueNRG balun transformer and integrated filtering Description Datasheet production data STMicroelectronics BALF-NRG-01D3 is an ultra miniature balun. The BALF-NRG-01D3 integrates
EMIF01-SMIC01F2. Single line IPAD, EMI filter including ESD protection. Features. Application. Description. Complies with the following standards
Single line IPAD, EMI filter including ESD protection Features High density capacitor 1 line low-pass-filter Lead-free package High efficiency in EMI filtering Very low PCB space consumtion Very thin package:
Obsolete Product(s) - Obsolete Product(s)
EMIF06-MSD03F3 6-line low capacitance IPAD for micro-sd card with EMI filtering and ESD protection Features EMI low-pass filter ESD protection ±15 kv (IEC 61000-4-2) Integrated pull up resistors to prevent
EMIF06-MSD03F3. 6-line low capacitance IPAD for micro-sd card with EMI filtering and ESD protection. Features. Application. Description.
EMIF06-MSD03F3 6-line low capacitance IPAD for micro-sd card with EMI filtering and ESD protection Features EMI low-pass filter ESD protection ±15 kv (IEC 61000-4-2) Integrated pull up resistors to prevent
EMIF03-SIM05F3. EMI filter with SWP protection for SIM interface. Features. Application. Description. Complies with the following standards:
EMIF0-SIM05F EMI filter with SWP protection for SIM interface Datasheet production data Features Lead-free package Very low PCB space consumption Very thin package: < 0.55 mm after reflow High efficiency
EMIF02-SPK03F2. 2-channel EMI filter and ESD protection for speaker phone. Features. Application. Description. Complies with the following standards
2-channel EMI filter and ESD protection for speaker phone Datasheet production data Features 2-channel EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering: S21 attenuation, -40 db at
LFTVS18-1F3. Low forward voltage Transil, transient voltage suppressor. Features. Description. Complies with the following standards:
Low forward voltage Transil, transient voltage suppressor Features Strong ESD and EOS protection Datasheet production data Very low clamping factor V CL /V BR Unidirectional device Fast response time Very
ESDALCL6-4P6A. Multi-line low capacitance and low leakage current ESD protection. Features. Applications. Description
Multi-line low capacitance and low leakage current ESD protection Features Datasheet production data Diode array topology: 4 lines protection Low leakage current: 10 na at 3 V 1 na at 1 V Very low diode
ESDA18-1F2. Transil, transient voltage suppressor. Features. Description. Complies with the following standards A 1
Transil, transient voltage suppressor Features Stand-off voltage 16V Unidirectional device Low clamping factor V CL /V BR Fast response time Very thin package: 0.65 mm Complies with the following standards
EMIF04-1K030F3. 4-line IPAD, EMI filter including ESD protection. Features. Application. Description. Complies with the following standards:
4-line IPAD, EMI filter including ESD protection Features Datasheet production data Flip-Chip package (9 bumps) Figure 1. Pin configuration (bump side) 4-line EMI symmetrical (I/O) low-pass filter High
ESDARF01-1BF4. ESD protection for AM and FM antenna. Features. Applications. Description. Complies with the following standards
ESD protection for AM and FM antenna Datasheet production data Features Single line bidirectional protection Very low capacitance (1.2 pf max) Lead-free package Very low capacitance, line to ground, for
DPIULC6. ESD protection for internal DisplayPort. Features. Description. Complies with the following standards
ESD protection for internal DisplayPort Features Compliant with DisplayPort 1.1a IEC 61000-4-2 level 4 compliant Ultralarge bandwidth (> 5 GHz) Low capacitance variation: 0.05 pf 100 Ω ± 10% differential
ECMF02-2BF3. Dual line IPAD, common mode filter with ESD protection for high speed serial interface. Description. Features.
Dual line IPAD, common mode filter with ESD protection for high speed serial interface Description Datasheet - production data The ECMF02-2BF3 is a highly integrated common mode filter designed to suppress
EMIF03-SIM02F3. 3-line IPAD, EMI filter including ESD protection. Features. Applications. Description. Complies with the following standards
3-line IPAD, EMI filter including ESD protection Features EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering Lead-free package Very low PCB space consuming: 1.2 mm 2 Very thin package:
CBTVS2A12-1F3. Circuit breaker with transient voltage suppressor. Features. Description. Complies with the following standards:
Circuit breaker with transient voltage suppressor Features Datasheet - production data Flip Chip (4 bumps) Figure 1. Pin configuration (bump side) A B 1 Transient voltage suppressor (TVS) Non-resettable
EVAL-RHF310V1. EVAL-RHF310V1 evaluation board. Features. Description
evaluation board Data brief Features Mounted Engineering Model RHF310K1: Rad-hard, 120 MHz, operational amplifier (see RHF310 datasheet for further information) Mounted components (ready-to-use) Material:
2-line IPAD, ultra low capacitance protection for high speed USB
2-line IPAD, ultra low capacitance protection for high speed USB Features Ultra low diode capacitance (1.2 pf max) Two data lines (D+ and D-) protected against 15 kv ESD Breakdown voltage V BR = 6.0 V
EMIF02-USB03F2. 2-line IPAD, EMI filter including ESD protection. Features. Application. Description. Complies with the following standards
2-line IPAD, EMI filter including ESD protection Features 2-line, low-pass filter + 2-line ESD protection High efficiency in EMI filtering Lead-free package Very low PCB space occupation: < 2.80 mm 2 Very
EMIF10-COM01F2. 10-line IPAD, EMI filter including ESD protection. Features. Applications. Description. Complies with the following standard:
10-line IPAD, EMI filter including ESD protection Features EMI symmetrical (I/O) low-pass filter Lead free package Very low PCB space consuming: < 6 mm 2 Very thin package: 0.65 mm High efficiency in ESD
USBULC6-2N4. Ultralow capacitance ESD protection for high speed interface. Features. Applications. Description. Benefits
Ultralow capacitance ESD protection for high speed interface Features 2-line TVS diodes Ultralow capacitance 0.6 pf typ. 1.0 x 0.8 mm package 0.4 mm pitch Lead-free package Benefits Flow-through layout
STEVAL-ISQ010V1. High-side current-sense amplifier demonstration board based on the TSC102. Features. Description
High-side current-sense amplifier demonstration board based on the TSC102 Data brief Features Independent supply and input common-mode voltages Wide common-mode operating range: 2.8 V to 30 V Wide common-mode
BALF-NRG-01D3. 50 Ω nominal input / conjugate match balun to BlueNRG transceiver, with integrated harmonic filter. Description. Features.
50 Ω nominal input / conjugate match balun to BlueNRG transceiver, with integrated harmonic filter Description Datasheet production data Flip-Chip package 4 bumps STMicroelectronics is an ultra miniature
TDA7233D 1W AUDIO AMPLIFIER WITH MUTE
1 AUDIO AMPLIFIER ITH MUTE 1 FEATURES OPERATING VOLTAGE 1.8 TO 15 V EXTERNAL MUTE OR POER DON FUNCTION IMPROVED SUPPLY VOLTAGE REJECTION LO QUIESCENT CURRENT HIGH POER CAPABILITY LO CROSSOVER DISTORTION
Obsolete Product(s) - Obsolete Product(s)
2 W mono amplifier Features 2 W output power into 8 Ω at 12 V, THD = 10% Internally fixed gain of 32 db No feedback capacitor No boucherot cell Thermal protection AC short-circuit protection SVR capacitor
ESDA-1K. EOS and ESD Transil protection for charger and battery port. Features. Description. Applications. Benefits
EOS and ESD Transil protection for charger and battery port Features Breakdown voltage: 12 V, 18 V Unidirectional device High peak power dissipation: 450 W (8/20 µs waveform) ESD protection level better
ETP01-xx21 Protection for Ethernet lines Features Description Applications Benefits Complies with the following standards
Protection for Ethernet lines Features Differential and common mode protection Telcordia GR089 Intrabuilding: 50 A, 2/0 µs ITU-T K20/2: 40 A, 5/30 µs Low capacitance: 3 pf max at 0 V UL94 V0 approved resin
BAT48 Series. Small signal Schottky diodes. Main product characteristics. Features and benefits. Order codes. Description. BAT48ZFILM (Single) SOD-123
Small signal Schottky diodes Main product characteristics I F V RRM C (typ) T j (max) 350 ma 40 V 18 pf 150 C SOD-123 BAT48ZFILM (Single) Features and benefits Low leakage current losses Negligible switching
BTA10-600GP. 10 A Triac. Features. Description
10 A Triac Features Low I H : 13 ma max High surge current: I TSM = 120 A I GT specified in four quadrants Insulating voltage: 2500 V (RMS) (UL Recognized: E81734) G A2 A1 Description The BTA10-600GP uses
LET9060C. RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs. Features. Description
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT (@ 28 V)= 60 W with 18 db gain @ 945 MHz
Obsolete Product(s) - Obsolete Product(s)
High bandwidth analog switch with 16-to-8 bit MUX/DEMUX Features Low R ON : 5.5 Ω typical V CC operating range: 3.0 to 3.6 V Low current consumption: 20 µa ESD HBM model: > 2 kv Channel on capacitance:
ESDAULC6-1U2. Single-line unidirectional ESD protection for high speed interface. Features. Applications. Description
Single-line unidirectional ESD protection for high speed interface Features Datasheet production data Unidirectional device Ultralow diode capacitance: 0.8 pf Low leakage current 0201 SMD package size
R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. 2N6036 2N6036 NPN SOT-32 Tube 2N6039 2N6039 PNP SOT-32 Tube
2N6036 2N6039 Complementary power Darlington transistors Features. Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications
PD RF power transistor the LdmoST plastic family. Features. Description
RF power transistor the LdmoST plastic family Features Excellent thermal stability Common source configuration Broadband performances P OUT = 1 W with 15 db gain @ 870 MHz Plastic package ESD protection
ESDALC6V1-5P6. ESD protection for high speed interface. Features. Applications. Description. Benefits Low capacitance uni-directional ESD protection.
ESDALC6V1-5P6 ESD protection for high speed interface Features Diode array topology Low capacitance (12 pf typical) Lead-free package Benefits Low capacitance uni-directional ESD protection. Low PCB space
ST26025A. PNP power Darlington transistor. Features. Applications. Description
ST26025A PNP power Darlington transistor Features High current monolithic Darlington configuration Integrated antiparallel collector-emitter diode Applications Automotive fan control Linear and switching
LM2903H. Low-power dual voltage comparator. Features. Description
LM23H Low-power dual voltage comparator Datasheet production data Features Wide single supply voltage range or dual supplies +2 V to +36 V or ±1 V to ±18 V Very low supply current (0.4 ma) independent
STPSC V power Schottky silicon carbide diode. Features. Description
600 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function Description The SiC
Order code Temperature range Package Packaging Marking
Micropower quad CMOS voltage comparator Datasheet production data Features Extremely low supply current: 9 μa typ./comp. Wide single supply range 2.7 V to 16 V or dual supplies (±1.35 V to ±8 V) Extremely
TS522. Precision low noise dual operational amplifier. Features. Description
Precision low noise dual operational amplifier Datasheet production data Features Large output voltage swing: +14.3 V/-14.6 V Low input offset voltage 850 μv max. Low voltage noise: 4.5 nv/ Hz High gain
EMIF03-SIM01F2. 3-line IPAD, EMI filter including ESD protection. Features. Applications. Description. Complies with the following standards
3-line IPAD, EMI filter including ESD protection Features EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering Lead-free package Very low PCB space occupation: 1.42 mm x 1.42 mm Very
EMIF10-COM01C2 IPAD. EMI Filter including ESD protection. Main product characteristics. Description. Order code. Benefits
IPAD EMI Filter including ESD protection Main product characteristics EMI filtering and ESD protection for: Computers and printers Communication systems Mobile phones Description The is a highly integrated
ESDAVLC6V1-1BM2 ESDAVLC6V1-1BT2
ESDAVLC6V1-1BM2 ESDAVLC6V1-1BT2 Single line low capacitance Transil for ESD protection Features single line bidirectional protection breakdown voltage V BR = 6.1 V min. very low capacitance (6 pf typ.
RefTitle1 PD84008L-E. RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs. Features. Description
RefTitle1 PD848L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT = 8 W with 13 db gain @ 87
50 Ω nominal input / conjugate match balun to nrf51422-qfaa, nrf24le1, nrf51822-qfaa/ab, with integrated harmonic filter.
50 Ω nominal input / conjugate match balun to nrf51422-qfaa, nrf24le1, nrf51822-qfaa/ab, with integrated harmonic filter Description Datasheet production data Features 50 Ω nominal input / conjugate match
ESDA14V2-1BF3. Single-line bidirectional Transil array for ESD protection. Features. Applications. Description. Complies with the following standards
Single-line bidirectional Transil array for ESD protection Features ESD Protection: IEC61000-4-2 level 4 Low leakage current Very small PCB area < 0.4 mm² 400 micron pitch Complies with the following standards
50 Ω nominal input / conjugate match balun to nrf51422-qfaa, nrf24le1, nrf51822-qfaa/ab, with integrated harmonic filter
50 Ω nominal input / conjugate match balun to nrf51422-qfaa, nrf24le1, nrf51822-qfaa/ab, with integrated harmonic filter Datasheet - production data Features 50 Ω nominal input / conjugate match to Nordic
STPS140Z-Y. Automotive power Schottky rectifier. Features. Description
Automotive power Schottky rectifier Datasheet production data Features Very small conduction losses Negligible switching losses Extremely fast switching ECOPACK 2 compliant component AEC-Q101 qualified
BD235 BD237. Low voltage NPN power transistors. Features. Applications. Description. Low saturation voltage NPN transistors
BD235 BD237 Low voltage NPN power transistors Features Low saturation voltage NPN transistors Applications Audio, power linear and switching applications Description The devices are manufactured in Planar
Order codes Marking Polarity Package Packaging. MJD44H11T4 MJD44H11 NPN DPAK Tape and reel MJD45H11T4 MJD45H11 PNP DPAK Tape and reel
MJD44H11 MJD45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications
EMIF08-LCD04M16. 8-line L-C IPAD, EMI filter and ESD protection in Micro QFN. Features. Description. Applications
8-line L-C IPAD, EMI filter and ESD protection in Micro QFN Features High cut off frequency low-pass filter: F C = 400 MHz at -6 db High efficiency in EMI filtering: better than -35 db from 900 MHz to
2STR SOT-23 Tape and reel 2STR1230G 130G SOT-23 Tape and reel
Low voltage fast-switching NPN power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface
EMIF06-HSD03F3 Datasheet production data Features Flip-Chip package (17 bumps) Figure 1. Pin configuration (bump side)
EMI filter with integrated ESD protection for micro-sd Card Features Datasheet production data Flip-Chip package ( 17 bumps) Figure 1. Pin configuration (bump side) I1 O1 Vcc I2 O2 I3 O3 I4 O4 I5 O5 I6
D44H8 - D44H11 D45H8 - D45H11
D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed TAB Applications Power amplifier Switching circuits 1 2 3 Description
MJE182 Low voltage high speed switching NPN transistor Features Applications Description High speed switching NPN device
Low voltage high speed switching NPN transistor Features High speed switching NPN device Applications Audio amplifier High speed switching applications Description This device is an NPN low voltage transistor
Gate. Order codes Package Packaging
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet production data Features Excellent thermal stability Common source configuration P OUT = 15 W with 16 db
MC Low noise quad operational amplifier. Features. Description
MC3379 Low noise quad operational amplifier Features Low voltage noise: 4.5 nv/ Hz High gain bandwidth product: 15 MHz High slew rate: 7 V/µs Low distortion:.2% Large output voltage swing: +14.3 V/-14.6
1N5908 SM5908. Transil. Features. Description. Complies with the following standards. Peak pulse power: Stand off voltage: 5 V Unidirectional
1N5908 SM5908 Transil Features Peak pulse power: 1500 W (10/1000 μs) Stand off voltage: 5 V Unidirectional A A Operating T jmax : 175 C High power capability at T jmax : 1500 W (10/1000 µs) JEDEC registered
Low noise low drop voltage regulator with shutdown function. Part numbers
Low noise low drop voltage regulator with shutdown function Features Output current up to 150 ma Low dropout voltage (350 mv at I OUT = 50 ma) Very low quiescent current: 0.1 µa in OFF mode and max. 250
BAL-NRF02D3. 50 ohm nominal input / conjugate match balun to nrf51822-ceaa and nrf51422-ceaa. Features. Applications. Description.
50 ohm nominal input / conjugate match balun to nrf51822-ceaa and nrf51422-ceaa Features Datasheet production data 50 Ω nominal input / conjugate match to Nordic Semiconductor chips nrf51422-ceaa and nrf51822-ceaa.
Obsolete Product(s) - Obsolete Product(s)
High gain Low Voltage PNP power transistor Features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current Applications Power management in portable
PD54003L-E. RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs. Features. Description
RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT =3 W mith 20dB gain@500 MHz New leadless plastic
STEVAL-TDR001V1. 2 stage RF power amp: PD PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs. Feature. Description
2 stage RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature Excellent thermal stability Frequency: 380-512 MHz Supply voltage: 7.2 V Output power: 4 W Current
Obsolete Product(s) - Obsolete Product(s)
Low power quad operational amplifier Features Wide gain bandwidth: 1.3 MHz Extended temperature range: -40 C to +150 C Input common-mode voltage range includes negative rail Large voltage gain: 100 db
2STA1695. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -140 V Complementary to 2STC4468 Typical f t = 20 MHz Fully characterized at 125 C Applications 1 2 3 Audio power
LM723CN. High precision voltage regulator. Features. Description
High precision voltage regulator Features Input voltage up to 40 V Output voltage adjustable from 2 to 37 V Positive or negative supply operation Series, shunt, switching or floating operation Output current
TS391. Low-power single voltage comparator. Features. Description
Low-power single voltage comparator Datasheet production data Features Wide single supply voltage range or dual supplies +2 V to +36 V or ±1 V to ±18 V Very low supply current (0.2 ma) independent of supply
DB Evaluation board using PD85004 for 900 MHz 2-way radio. Features. Description
Evaluation board using PD85004 for 900 MHz 2-way radio Features Excellent thermal stability Frequency: 860-960 MHz Supply voltage: 13.6 V Output power: 4 W Power gain: 17.4 ± 0.3 db Efficiency: 56 % -
STPS30H60-Y. Automotive power Schottky rectifier. Features. Description
Automotive power Schottky rectifier Datasheet production data Features High junction temperature capability Avalanche rated Low leakage current Good trade-off between leakage current and forward voltage
Order code Temperature range Package Packaging Marking
Single 8-channel analog multiplexer/demultiplexer Datasheet production data Features Low ON resistance: 125 Ω (typ.) Over 15 V p.p signal-input range for: V DD - V EE = 15 V High OFF resistance: channel
LM2903W. Low-power, dual-voltage comparator. Features. Description
Low-power, dual-voltage comparator Datasheet production data Features Wide, single supply voltage range or dual supplies +2 V to +36 V or ±1 V to ±18 V Very low supply current (0.4 ma) independent of supply
Order codes Marking Package Packaging 2STF SOT-89 2STN2550 N2550 SOT-223. November 2008 Rev 1 1/8
2STF2550 2STN2550 Low voltage high performance PNP power transistors Preliminary Data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface
KF25B, KF33B KF50B, KF80B
KF25B, KF33B KF50B, KF80B Very low drop voltage regulators with inhibit Datasheet production data Features Very low dropout voltage (0.4 V) Very low quiescent current (typ. 50 µa in OFF mode, 500 µa in
MC33172 MC Low power dual bipolar operational amplifiers. Features. Description
Low power dual bipolar operational amplifiers Features Good consumption/speed ratio: only 200 µa for 2.1MHz, 2V/µs Single (or dual) supply operation from +4 V to +44V (±2V to ±22V) Wide input common mode
LF253 LF353. Wide bandwidth dual JFET operational amplifiers. Features. Description
Wide bandwidth dual JFET operational amplifiers Features Low power consumption Wide common-mode (up to V CC + ) and differential voltage range Low input bias and offset current Output short-circuit protection
R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. STX112-AP X112 NPN TO92-AP Ammopack STX117-AP X117 PNP TO92-AP Ammopack
STX112 STX117 Complementary power Darlington transistors Features. Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application
1. Drain 2. Gate. Order code Marking Package Packaging. STAC4932F STAC4932F STAC244F Plastic tray. September 2010 Doc ID Rev 3 1/12
RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features Excellent thermal stability Common source push-pull configuration P OUT = 1000 W min. (1200 W typ.) with 26 db gain @ 123 MHz
BUX87. High voltage NPN power transistor. Features. Applications. Description
High voltage NPN power transistor Features High voltage capability (450 V V CEO ) Minimum lot-to-lot spread for reliable operation High DC current gain Applications Flyback and forward single transistor
Order codes Packages Lead finish Marking Type EPPL Packaging. 2N5153SHR SMD.5 Gold ESCC Flight Yes Strip pack
Hi-Rel PNP bipolar transistor 80 V - 5 A Features BV CEO I C (max) Hi-Rel PNP bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific
TSL channel buffers for TFT-LCD panels. Features. Application. Description
14 + 1 channel buffers for TFT-LCD panels Datasheet production data Features Wide supply voltage: 5.5 V to 16.8 V Low operating current: 6 ma typical at 25 C Gain bandwidth product: 1 MHz High current
STEVAL-TDR003V1. 2-stage RF power amp: PD PD54008L-E + LPF N-channel enhancement-mode lateral MOSFETs. Feature. Description
2-stage RF power amp: PD84001 + PD54008L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature Excellent thermal stability Frequency: 135-175 MHz Supply voltage: 7.2 V Output power: 5 W Current
BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors
BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with
2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 C Application 1 2 3 Audio power
Obsolete Product(s) - Obsolete Product(s)
6 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function Description The SiC diode
SD1728 (TH430) RF & Microwave transistors HF SSB application. Features. Description. Pin connection
SD1728 (TH430) RF & Microwave transistors HF SSB application Features 13.56MHz 44V Gold metallization Common emitter P OUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar
2STN2540. Low voltage fast-switching PNP power bipolar transistor. Features. Applications. Description
2STN2540 Low voltage fast-switching PNP power bipolar transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting device in
STIEC45-XXAS. Transil for IEC compliance. Features. Description. Complies with the following standards
Transil for IEC 61000-4-5 compliance Features Peak pulse current: 500 A (8/20 μs, 1.2/50 µs) Stand off voltage range: from 24 to 33 Unidirectional types Low leakage current 0.2 µa at 25 C 1 µa at 85 C
SPV1001T40. Cool bypass switch for photovoltaic application. Features. Application. Description TO-220
Cool bypass switch for photovoltaic application Features I F =16 A, V R = 40 V Very low forward voltage drop Very low reverse leakage current 150 C operating junction temperature +4 Application Photovoltaic
STEVAL-CCA040V1. 4X10 Watt dual/quad power amplifier demonstration board based on the STA540SAN. Features. Description
4X10 Watt dual/quad power amplifier demonstration board based on the STA540SAN Features High output-power capability: 4x10 W / 4 Ω at 17 V, 1 KHz, THD = 10% 2x26 W / 4 Ω at 14.4 V, 1 KHz, THD = 10% 2x15
Part numbers Order codes Packages Temperature range. LM137 LM137K TO-3-55 C to 150 C LM337 LM337K TO-3 0 C to 125 C LM337 LM337SP TO C to 125 C
LM137 LM337 Three-terminal adjustable negative voltage regulators Features Output voltage adjustable down to V REF 1.5 A guaranteed output current 0.3%/V typical load regulation 0.01%/V typical line regulation
LD1085CXX. 3 A low-drop, adjustable positive voltage regulator. Features. Description
3 A low-drop, adjustable positive voltage regulator Features Typical dropout 1.3 V (at 3 A) Three terminal adjustable output voltage Guaranteed output current up to 3 A Output tolerance ± 2 % at 25 C and
BAT41. Low capacitance small signal Schottky diodes. Features. Description. BAT41ZFILM (Single) SOD-123. BAT41JFILM (Single) SOD-323
Low capacitance small signal Schottky diodes Features Low leakage current losses Negligible switching losses Low forward and reverse recovery times Extremely fast switching Surface mount device Low capacitance