P-Channel 3 V (D-S) 75 C MOSFET SUB75P3-7, SUP75P3-7 PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.7 at V GS = - V ± 75-3. at V GS = - 4.5 V ± 75 FEATURES Compliant to RoHS Directive 22/95/EC Available RoHS* COMPLIANT TO-22AB TO-263 S DRAIN connected to TAB G D S Top View SUB75P3-7 G G D S Top View SUP75P3-7 Ordering Information: SUB75P3-7 (TO-263) SUB75P3-7-E3 (TO-263, Lead (Pb)-free) SUP75P3-7 (TO-22AB) SUP75P3-7-E3 (TO-22AB, Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 2 V T C = 25 C - 75 a Continuous Drain Current (T J = 75 C) I D T C = 25 C - 65 A Pulsed Drain Current I DM - 24 Avalanche Current I AR - 6 Repetitive Avalanche Energy b L =. mh E AR 8 mj T C = 25 C (TO-22AB and TO-263) 87 d Power Dissipation P D W T A = 25 C (TO-263) c 3.75 Operating Junction and Storage Temperature Range T J, T stg - 55 to 75 C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient PCB Mount (TO-263) c 4 R thja Free Air (TO-22AB) 62.5 C/W Junction-to-Case R thjc.8 Notes: a. Package limited. b. Duty cycle %. c. When mounted on " square PCB (FR-4 material). d. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 79 S-2429-Rev. E, 25-Oct-
SUB75P3-7, SUP75P3-7 SPECIFICATIONS (T J = 25 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, I D = - 25 µa - 3 V Gate Threshold Voltage V GS(th) V DS = V GS, I D = - 25 µa - - 3 Gate-Body Leakage I GSS V DS = V, V GS = ± 2 V ± na Zero Gate Voltage Drain Current I DSS V DS = - 3 V, V GS = V, T J = 25 C - 5 µa V DS = - 3 V, V GS = V - V DS = - 3 V, V GS = V, T J = 75 C - 25 On-State Drain Current a I D(on) V DS = - 5 V, V GS = - V - 2 A Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V GS = - V, I D = - 3 A.55.7 VDS = - 5 V, VGS = - V, ID = - 75 A Drain-Source On-State Resistance a R DS(on) V GS = - V, I D = - 3 A, T J = 25 C. V GS = - V, I D = - 3 A, T J = 75 C.3 V GS = - 4.5 V, I D = - 2 A.8. Forward Transconductance a g fs V DS = - 5 V, I D = - 75 A 2 S Dynamic b Input Capacitance C iss 9 Output Capacitance C oss V GS = V, V DS = - 25 V, f = MHz 565 pf Reversen Transfer Capacitance C rss 75 Total Gate Charge c Q g 6 24 Gate-Source Charge c Q gs 32 nc Gate-Drain Charge c Q gd 3 Turn-On Delay Time c t d(on) 25 4 Rise Time c t r V DD = - 5 V, R L =.2 225 36 Turn-Off Delay Time c t d(off) I D - 75 A, V GEN = - V, R g = 2.5 5 24 ns Fall Time c t f 2 34 Source-Drain Diode Ratings and Characteristics b (T C = 25 C) Continuous Current I S - 75 Pulsed Current I SM - 24 A Forward Voltage a V SD I F = - 75 A, V GS = V -.2 -.5 V Reverse Recovery Time t rr 55 ns Peak Reverse Recovery Current I RM(REC) I F = - 75 A, di/dt = A/µs 2.5 5 A Reverse Recovery Charge Q rr.7.25 µc Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Document Number: 79 S-2429-Rev. E, 25-Oct-
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) SUB75P3-7, SUP75P3-7 25 V GS = V thru 6 V 2 T C = - 55 C 2 6 25 C 5 5 V 4 V 2 8 25 C 5 4 3 V 2 4 6 8 V DS - Drain-to-Source Voltage (V) Output Characteristics 2 3 4 5 6 V GS - Gate-to-Source Voltage (V) Transfer Characteristics 5.3 g fs - Transconductance (S) 2 9 6 3 T C = - 55 C 25 C 25 C - On-Resistance ( ) R DS(on).25.2.5..5 V GS = 4.5 V V GS = V 2 4 6 8 Transconductance 2 2 4 6 8 2 On-Resistance vs. Drain Current 2 C - Capacitance (pf) 8 6 4 2 C oss C iss - Gate-to-Source Voltage (V) V GS 6 2 8 4 V DS = 5 V I D = 75 A C rss 6 2 8 24 3 V DS - Drain-to-Source Voltage (V) Capacitance 5 5 2 25 3 Q g - Total Gate Charge (nc) Gate Charge Document Number: 79 S-2429-Rev. E, 25-Oct- 3
SUB75P3-7, SUP75P3-7 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted).8.5 V GS = V I D = 3 A R DS(on) - On-Resistance (Normalized).2.9.6.3 I S - Source Current (A) T J = 5 C T J = 25 C - 5-25 25 5 75 25 5 75 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature.2.4.6.8. V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 45 I D = 25 µa I AV (A) at T A = 25 C 4 (a) I Dav I AV (A) at T A = 5 C (V) V DS 35 3...... t in (s) Avalanche Current vs. Time 25-5 - 25 25 5 75 25 5 75 T J - Junction Temperature ( C) Drain Source Breakdown vs. Junction Temperature 4 Document Number: 79 S-2429-Rev. E, 25-Oct-
SUB75P3-7, SUP75P3-7 THERMAL RATINGS 9 75 µs - Drain Current (A) I D 6 45 3 5 Limited by R DS(on)* T C = 25 C Single Pulse ms ms ms DC 25 5 75 25 5 75 T C - Case Temperature ( C) Maximum Avalanche and Drain Current vs. Case Temperature.. V DS - Drain-to-Source Voltage (V) * V GS minimum V GS at which R DS(on) is specified Safe Operating Area 2 Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..2.5 Single Pulse. - 4-3 - 2 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?79. Document Number: 79 S-2429-Rev. E, 25-Oct- 5
Package Information TO-22AB D L H() Q L() E 2 e 3 b M * b() Ø P C A F MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65.67.83 b.69..27.4 b().2.73.47.68 c.36.6.4.24 D 4.85 5.49.585.6 D2 2.9 2.7.48.5 E.4.5.395.44 e 2.4 2.67.95.5 e() 4.88 5.28.92.28 F.4.4.45.55 H() 6.9 6.48.24.255 J() 2.4 2.92.95.5 L 3.35 4.2.526.552 L() 3.32 3.82.3.5 Ø P 3.54 3.94.39.55 Q 2.6 3..2.8 ECN: T4-43-Rev. P, 6-Jun-4 DWG: 547 Note * M =.32 mm to.62 mm (dimension including protrusion) Heatsink hole for HVM e() J() D2 Revison: 6-Jun-4 Document Number: 795 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
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