RGT3NS6D 6V A Field Stop Trench IGBT Outline V CES 6V LPDS / TO-262 I C( C) A V CE(sat) (Typ.).6V P D 33W () (3) (2) () (2) (3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss 3) Short Circuit Withstand Time μs () (2) * () Gate (2) Collector (3) Emitter 4) Built in Very Fast & Soft Recovery FRD (RFN - Series) (3) * Built in FRD ) Pb - free Lead Plating ; RoHS Compliant Packaging Specifications Applications Packaging Taping / Tube General Inverter Reel Size (mm) 33 / - UPS Tape Width (mm) 24 / - Type Power Conditioner Basic Ordering Unit (pcs), /, Welder Packing code TL / C9 Marking RGT3NS6D Absolute Maximum Ratings (at T C = 2 C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage V CES 6 V Gate - Emitter Voltage V GES 3 V Collector Current T C = 2 C I C 3 A T C = C I C A Pulsed Collector Current * I CP 4 A Diode Forward Current T C = 2 C I F 26 A T C = C I F A Diode Pulsed Forward Current * I FP 4 A Power Dissipation T C = 2 C P D 33 W T C = C P D 66 W Operating Junction Temperature T j -4 to +7 C Storage Temperature T stg - to +7 C * Pulse width limited by T jmax. 2 ROHM Co., Ltd. All rights reserved. / 2. - Rev.C
RGT3NS6D Thermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case R θ(j-c) - -.2 C/W Thermal Resistance Diode Junction - Case R θ(j-c) - - 2.86 C/W IGBT Electrical Characteristics (at T j = 2 C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Unit Collector - Emitter Breakdown Voltage BV CES I C = μa, V GE = V 6 - - V Collector Cut - off Current I CES V CE = 6V, V GE = V - - μa Gate - Emitter Leakage Current I GES V GE = 3V, V CE = V - - 2 na Gate - Emitter Threshold Voltage V GE(th) V CE = V, I C =.ma. 6. 7. V Collector - Emitter Saturation Voltage V CE(sat) I C = A, V GE = V T j = 2 C -.6 2. T j = 7 C - 2. - V 2 ROHM Co., Ltd. All rights reserved. 2/ 2. - Rev.C
RGT3NS6D IGBT Electrical Characteristics (at T j = 2 C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Unit Input Capacitance C ies V CE = 3V - 78 - Output Capacitance C oes V GE = V - 3 - pf Reverse Transfer Capacitance C res f = MHz - 3 - Total Gate Charge Q g V CE = 3V - 32 - Gate - Emitter Charge Q ge I C = A - 8 - nc Gate - Collector Charge Q gc V GE = V - - Turn - on Delay Time t d(on) I C = A, V CC = 4V - 8 - Rise Time t r V GE = V, R G = Ω - 2 - Turn - off Delay Time t d(off) T j = 2 C - 64 - ns Fall Time t f Inductive Load - 7 - Turn - on Delay Time t d(on) I C = A, V CC = 4V - 8 - Rise Time t r V GE = V, R G = Ω - 22 - Turn - off Delay Time t d(off) T j = 7 C - 74 - ns Fall Time t f Inductive Load - 3 - I C = 4A, V CC = 2V Reverse Bias Safe Operating Area RBSOA V P = 6V, V GE = V FULL SQUARE - R G = Ω, T j = 7 C V CC 36V Short Circuit Withstand Time t sc V GE = V - - μs T j = 2 C 2 ROHM Co., Ltd. All rights reserved. 3/ 2. - Rev.C
RGT3NS6D FRD Electrical Characteristics (at T j = 2 C unless otherwise specified) Parameter Symbol Conditions I F = A Values Min. Typ. Max. Unit Diode Forward Voltage V F T j = 2 C -..9 V T j = 7 C -.3 - Diode Reverse Recovery Time t rr - - I F = A ns Diode Peak Reverse Recovery Current I rr V CC = 4V di F /dt = 2A/μs - 6. - A Diode Reverse Recovery Charge Q rr T j = 2 C -.9 - μc Diode Reverse Recovery Time t rr - 4 - ns I F = A Diode Peak Reverse Recovery Current I rr V CC = 4V di F /dt = 2A/μs - 9. - A Diode Reverse Recovery Charge Q rr T j = 7 C -.79 - μc 2 ROHM Co., Ltd. All rights reserved. 4/ 2. - Rev.C
RGT3NS6D Electrical Characteristic Curves Fig. Power Dissipation vs. Case Temperature 6 Fig.2 Collector Current vs. Case Temperature 4 4 Power Dissipation : P D [W] 2 8 6 4 2 3 2 T j 7ºC V GE V 2 7 2 7 2 7 2 7 Case Temperature : Tc [ºC] Case Temperature : Tc [ºC] Fig.3 Forward Bias Safe Operating Area 6 Fig.4 Reverse Bias Safe Operating Area.. T C = 2ºC Single Pulse µs µs 4 3 2 T j 7ºC V GE =V 2 4 6 8 Collector To Emitter Voltage : V CE [V] Collector To Emitter Voltage : V CE [V] 2 ROHM Co., Ltd. All rights reserved. / 2. - Rev.C
RGT3NS6D Electrical Characteristic Curves Fig. Typical Output Characteristics Fig.6 Typical Output Characteristics 4 4 3 3 2 2 T j = 2ºC V GE = 2V V GE = V V GE = 2V V GE = V V GE = 8V 4 4 3 3 2 2 T j = 7ºC V GE = 2V V GE = V V GE = 2V V GE = V V GE = 8V 2 3 4 2 3 4 Collector To Emitter Voltage : V CE [V] Collector To Emitter Voltage : V CE [V] Fig.7 Typical Transfer Characteristics 3 V CE = V 2 2 T j = 7ºC T j = 2ºC 2 4 6 8 2 Gate To Emitter Voltage : V GE [V] Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature Collector To Emitter Saturation Voltage : V CE(sat) [V] 4 3 2 V GE = V I C = 3A I C = A I C = 8A 2 7 2 7 Junction Temperature : T j [ºC] 2 ROHM Co., Ltd. All rights reserved. 6/ 2. - Rev.C
RGT3NS6D Electrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : V CE(sat) [V] 2 I C = 3A I C = A I C = 8A T j = 2ºC 2 Fig. Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : V CE(sat) [V] 2 I C = 3A I C = A I C = 8A T j = 7ºC 2 Gate To Emitter Voltage : V GE [V] Gate To Emitter Voltage : V GE [V] Fig. Typical Switching Time vs. Collector Current V CC =4V, V GE =V R G =Ω, T j =7ºC Fig.2 Typical Switching Time vs. Gate Resistance V CC =4V, I C =A V GE =V, T j =7ºC Switching Time [ns] t f t d(off) Switching Time [ns] t f t d(off) t r t r t d(on) 2 3 4 t d(on) 2 3 4 Gate Resistance : R G [Ω] 2 ROHM Co., Ltd. All rights reserved. 7/ 2. - Rev.C
RGT3NS6D Electrical Characteristic Curves Fig.3 Typical Switching Energy Losses vs. Collector Current Fig.4 Typical Switching Energy Losses vs. Gate Resistance Switching Energy Losses [mj].. E off E on V CC =4V, V GE =V R G =Ω, T j =7ºC 2 3 4 Switching Energy Losses [mj].. E off E on V CC =4V, I C =A V GE =V, T j =7ºC 2 3 4 Gate Resistance : R G [Ω] Fig. Typical Capacitance vs. Collector To Emitter Voltage Fig.6 Typical Gate Charge Capacitance [pf] Cies Coes f=mhz Cres V GE =V T j =2ºC.. Gate To Emitter Voltage : V GE [V] V CC =3V I C =A T j =2ºC 2 3 4 Collector To Emitter Voltage : V CE [V] Gate Charge : Q g [nc] 2 ROHM Co., Ltd. All rights reserved. 8/ 2. - Rev.C
RGT3NS6D Electrical Characteristic Curves Forward Current : I F [A] Fig.7 Typical Diode Forward Current vs. Forward Voltage 4 4 3 3 2 2 T j = 7ºC T j = 2ºC Fig.8 Typical Diode Reverse Recovery Time vs. Forward Current Reverse Recovery Time : t rr [ns] 4 3 2 V CC =4V di F /dt=2a/µs T j = 7ºC T j = 2ºC.. 2 2. 3 2 3 4 Forward Voltage : V F [V] Forward Current : I F [A] Fig.9 Typical Diode Reverse Recovery Current vs. Forward Current Reverse Recovery Current : I rr [A] 2 T j = 7ºC T j = 2ºC V CC =4V di F /dt=2a/µs 2 3 4 Forward Current : I F [A] Reverse Recovery Charge : Q rr [µc] Fig.2 Typical Diode Reverse Recovery Charge vs. Forward Current 2. 2.. V CC =4V di F /dt=2a/µs T j = 7ºC T j = 2ºC 2 3 4 Forward Current : I F [A] 2 ROHM Co., Ltd. All rights reserved. 9/ 2. - Rev.C
RGT3NS6D Electrical Characteristic Curves Fig.2 IGBT Transient Thermal Impedance Transient Thermal Impedance : Z thjc [ºC/W]...2..2 D=.. Single Pulse..... P DM t t2 Duty=t/t2 Peak T j =P DM Z thjc +T C Pulse Width : t[s] Fig.22 Diode Transient Thermal Impedance Transient Thermal Impedance : Z thjc [ºC/W]. D=..2. Single Pulse...2 P DM t t2 Duty=t/t2 Peak T j =P DM Z thjc +T C..... Pulse Width : t[s] 2 ROHM Co., Ltd. All rights reserved. / 2. - Rev.C
RGT3NS6D Inductive Load Switching Circuit and Waveform Gate Drive Time D.U.T. 9% D.U.T. V GE % VG 9% Fig.23 Inductive Load Circuit I C % t d(on) t r t d(off) t f t on t off I F t rr, Q rr di F /dt V CE I rr V CE(sat) Fig.2 Diode Reverce Recovery Waveform Fig.24 Inductive Load Waveform 2 ROHM Co., Ltd. All rights reserved. / 2. - Rev.C
Notice Notes ) 2) 3) 4) ) 6) 7) 8) 9) ) ) 2) 3) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications : Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 4) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http:///contact/ 2 ROHM Co., Ltd. All rights reserved. R2A