Zener Diode YFZVFH series
|
|
- Philip Bryant
- 5 years ago
- Views:
Transcription
1 Zener Diode Datasheet AEC-Q Qualified Application Dimensions (Unit : mm) Land size figure (Unit : mm) Voltage regulation Features 2. ) Small power mold type (TUMD2M) 2) High reliability 3) By chip-mouter, N ~. TUMD2M.8.5 automatic mouting is possible Structure Cathode Construction Silicon epitaxial planar ROHM : TUMD2M dot (year week factory) day EX. YFZVFH3.6B Taping dimensions (Unit : mm) Anode 4.±. 2.±.5.55 φ.55±. 3.5±.5.75± ±.2 2.8±.5.25±.5.43±.5 4.±.. φ.±.2.2.9±.8 Absolute maximum ratings (T a = 25 C) Parameter Symbol Limits Unit Power dissipation ( ) P 5 mw Junction temperature T j 5 C Storage temperature T stg 55 to 5 C Operating temperature T opr 55 to 5 C ( ) Device mounted on glass-epoxy board(5 5mm, t=.6mm) Solder land ( mm) 25 ROHM Co., Ltd. All rights reserved. / Rev.B
2 Electrical characteristics (T a = 25 C) TYP. MIN. MAX. I Z (ma) MAX. I Z (ma) MAX. V R (V) YFZV 2.B YFZV 2.2B YFZV 2.4B YFZV 2.7B YFZV 3.B YFZV 3.3B YFZV 3.6B YFZV 3.9B YFZV 4.3B YFZV 4.7B YFZV 5.B YFZV 5.6B YFZV 6.2B YFZV 6.8B YFZV 7.5B YFZV 8.2B YFZV 9.B YFZV B YFZV B YFZV 2B YFZV 3B YFZV 5B YFZV 6B YFZV 8B YFZV 2B YFZV 22B YFZV 24B YFZV 27B YFZV 3B YFZV 33B YFZV 36B YFZV 39B () The zener voltage(v Z ) is measured 4ms after power is supplied. (2) The Dynamic Impedance(Z Z ) are measured by superimposing a minute alternating current on the regulated current(i Z ) MARKING (TYPE NO.) Zener voltage : V Z (V) Symbol Dynamic Impedance : Z Z ( ) Reverse current : I R ( A) TYPE TYPE NO. TYPE TYPE NO. YFZV 2.B N YFZV 9.B N G YFZV 2.2B N 4 YFZV B N H YFZV 2.4B N 5 YFZV B N J YFZV 2.7B N 3 YFZV 2B N K YFZV 3.B N 4 YFZV 3B N L YFZV 3.3B N 5 YFZV 5B N M YFZV 3.6B N 6 YFZV 6B N N YFZV 3.9B N 7 YFZV 8B N P YFZV 4.3B N 8 YFZV 2B N Q YFZV 4.7B N 9 YFZV 22B N R YFZV 5.B N A YFZV 24B N S YFZV 5.6B N B YFZV 27B N T YFZV 6.2B N C YFZV 3B N U YFZV 6.8B N D YFZV 33B N V YFZV 7.5B N E YFZV 36B N W YFZV 8.2B N F YFZV 39B N X 25 ROHM Co., Ltd. All rights reserved. 2/ Rev.B
3 Electrical characteristic curves ZENER CURRENT : I Z (ma) V Z -I Z CHARACTERISTICS 25 ROHM Co., Ltd. All rights reserved. 3/ Rev.B
4 Electrical characteristic curves 6 POWER DISPERSION : Pd(mW) REVERS SURGE MAXIMUM POWER : PRSM(W) PRSM t pulse AMBIENT TEMPERATURE : T a ( C) Pd-T a CHARACTERISTICS... TIME : t(ms) PRSM-TIME CHARACTERISTICS. 4 TEMP.COEFFICIENCE : Z (%/ C) %/ C mv/ C TEMP.COEFFICIENCE : Z (mv/ C) Z -V Z CHARACTERISTICS 25 ROHM Co., Ltd. All rights reserved. 4/ Rev.B
5 YFZVFHB Electrical Characteristic Curves ZENER CURRENT : I Z (ma).. T a = 25 C T a = 25 C T a = 75 C T a = 25 C REVERSE CURRENT : I R (pa) T a = 25 C T a = 75 C T a = 25 C V Z -I Z CHARACTERISTICS REVERSE VOLTAGE : V R (V) V R -I R CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS : C t (pf) f = MHz AVE. : 9.67V T a =25 C I Z =2mA n=3pcs REVERSE VOLTAGE : V R (V) V R -C t CHARACTERISTICS V Z DISPERSION MAP 25 ROHM Co., Ltd. All rights reserved. 5/ Rev.B
6 YFZVFHB Electrical Characteristic Curves REVERSE CURRENT : I R (pa) AVE. : 56.5pA T a =25 C V R =7V n=3pcs CAPACITANCE BETWEEN TERMINALS : C t (pf) AVE. :.pf T a =25 C f=mhz V R =V n=pcs 5 I R DISPERSION MAP C t DISPERSION MAP DYNAMIC IMPEDANCE : Z Z ( ). ZENER CURRENT : I Z (ma) Z Z -I Z CHARACTERISTICS 25 ROHM Co., Ltd. All rights reserved. 6/ Rev.B
7 Notice Notes ) 2) 3) 4) 5) 6) 7) 8) 9) ) ) 2) 3) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications : Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 4) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System 25 ROHM Co., Ltd. All rights reserved. R2A
1.3± ± ± ± ± ROHM : TUMD2 dot (year week factory) + day EX. TDZ5.1B. Taping specifications (Unit : mm)
Zener Diode TDZ series Datasheet Application Dimensions (Unit : mm) Land size figure (Unit : mm) Constant voltage control Features ) Small mold type. (TUMD2) 2) High reliability. 3) Can be mounted automatically,
More information1.25± ±0.05. ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) EX. UDZV3.6B. Taping specifications (Unit : mm)
Zener Diode UDZV series Datasheet Application Dimensions (Unit : mm) Land size figure (Unit : mm) Constant voltage control.25±..±..5.9min. Features ) Compact,2-pin mini-mold type for high-density mounting.
More informationSchottky Barrier Diode RSX501L-20
Schottky Barrier Diode RSX51L-2 Application Dimensions (Unit : mm) Land Size Figure (Unit : mm) General rectification 2. 2.6±.15 2. 5.3±.1.5 9.5±.1 5.5±.5 12±.2 1.75±.1 Features 1) Small power mold type
More informationSchottky Barrier Diode
Schottky Barrier Diode RB48K / RB48KFH Datasheet Application Dimensions (Unit : mm) Land size figure (Unit : mm) Low current rectification 2.±.2.2±. 各リードとも. Each lead has same dimension 同寸法 (3) (2).±..9MIN.6
More informationSchottky Barrier Diode RB088BM150
Schottky Barrier Diode RB88BM5 Application Dimensions (Unit : mm) Land size figure (Unit : mm) Switching power supply 6. 6. Features ) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability
More informationSwitching Diode 1SS355. Datasheet. Application Dimensions (Unit : mm) Land size figure (Unit : mm) High speed switching
Switching Diode SS355 Datasheet Application Dimensions (Unit : mm) Land size figure (Unit : mm) High speed switching Features ) Ultra small mold type. (UMD2).25±. UMD2 2) High reliability. Structure.7±.
More informationSchottky Barrier Diode
Schottky Barrier Diode Datasheet Application Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification.6±..±..5. Features ) Small power mold type. (PMDU).6±. 3.5±. 3.5.85 ) Low I R. PMDU
More informationSurface mount type photo diode (Topview) RPMD-0100
Surface mount type photo diode (Topview) RPMD-0100 Applications Household applications Outline OAs, FAs Other general-purpose applications Features 1) Dimensions 2.0 1.2 0.85mm (L W H) 2) Visible light-blocking
More informationInfrared light emitting diode, top view type
Infrared light emitting diode, top view type SIR568ST3F The SIR568ST3F has the response speed and luminous output necessary for image transmission in audiovisualapplications. It can support almost all
More informationInfrared light emitting diode, top view type
Infrared light emitting diode, top view type SIR56ST3F The SIR56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable
More informationSurface Mount High Output Infared LEDs
Surface Mount High Output Infared LEDs SIM-040ST Applications Light source for sensors (proximity sensors,signal transmission applications) Outline Features 1) Higt compact, low-profile 2) Higt output,
More informationInfrared light emitting diode, side-view type
Infrared light emitting diode, sideview type SIM20ST The SIM20ST is a GaAs infrared light emitting diode with a sidefacing detector. High output with 1.85 lens. Applications Light source for sensors Outline
More informationPhotointerrupter, Small type
Photointerrupter, Small type RPI-352 Applications Printers Amusement Outline Features 1) Positioning pin enables precision mounting. 2) Gap between emitter and detector is 3.0mm. 3) Compact Dimensions
More informationSingle Digit LED Numeric Display
Single Digit LED Numeric Display LA-30 B / L Series LA-30 B / L series is developed because of the demand for small single digit LED Numeric Display. Materials of emission are GaAsP on GaP, AlGalnP and
More informationTO-247. Inner circuit. Type
SiC Schottky Barrier Diode V R I F Q C 2V 5A/3A* 5nC(Per leg) (*Per leg/ Both legs) AEC-Q Qualified Outline TO-247 Features ) Shorter recovery time Inner circuit 2) Reduced temperature dependence 3) High-speed
More informationSingle Digit LED Numeric Display
Single Digit LED Numeric Display LA-401 D / N Series LA-401 D / N series is developed because of the demand for small single digit LED Numeric Display. Materials of emission are GaAsP on GaP, AlGalnP and
More informationSingle Digit LED Numeric Display
Single Digit LED Numeric Display LA-401 D / N Series LA-401 D / N series is developed because of the demand for small single digit LED Numeric Display. Materials of emission are GaAsP on GaP, AlGalnP and
More informationInfrared light emitting diode, top view type
Infrared light emitting diode, top view type SIR563ST3F The SIR563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength
More informationReflective photosensor (photoreflector)
Reflective photosensor (photoreflector) RPR-220 Applications Compact disc players Copiers Game machines Office automation equipment Outline Features 1) A plastic lens is used for high sensitivity. 2) A
More informationTransmission type Photointerrupters Eco-Friendly type
Transmission type Photointerrupters EcoFriendly type RPIE Applications Outline Printers Optical Control Equipment Amusement Features ) Positioning pin results in high mounting accuracy ) Gap.mm Dimensions
More informationPhototransistor, top view type
Phototransistor, top view type RPT38PB3F The RPT38PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is
More informationReflective photosensor (photoreflector)
Reflective photosensor (photoreflector) Applications Printers Outline MFP (Multi-function Printer) Features 1) Blue light source, High power. 2) Focus distance 5mm to12mm Dimensions (Unit : mm) Absolute
More informationSingle Digit LED Numeric Display
Single Digit LED Numeric Display LA-301 B / L series is developed because of the demand for small single digit LED Numeric Display. Materials of emission are GaAsP on GaP, AlGalnP and GaP. This is the
More information2SA1834 V CEO -20V I C -10A. Datasheet. PNP -10A -20V Middle Power Transistor. Outline. Parameter Value CPT3. Features
PNP -10A -20V Middle Power Transistor Datasheet Outline Features Parameter Value CPT3 V CEO -20V I C -10A 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5001 3) Low V CE(sat) V CE(sat)
More informationType V U D Y M. (unit : mm) Typ. I F Max. V R Min.* 2 Typ. Max.* 2 I F Min. Typ. Max. I F SML-D15VW SML-D15UW
Datasheet Features Outline Original device technology enables high brightness and high reliability Single Rank products Size 16 168 (42) (63) 1..6mm 1.6.8mm (t=.2mm) (t=.55mm) Color Type V U U2 D Y M Dimensions
More informationRGPZ10BM40FH 430V 20A Ignition IGBT
RGPZBM4FH 43V 2A Ignition IGBT Datasheet BV CES I C 43 3V 2A (Typ.).6V E AS 2mJ Outline TO-22 () (3) (2) Features Inner Circuit ) Low Collector - Emitter Saturation (2) 2) High Self-Clamped Inductive Switching
More informationNew Designs. Not Recommended for 2SC5001 V CEO I C 20V 10A. Datasheet. NPN 10A 20V Middle Power Transistor. Outline Parameter Value CPT3
NPN 10A 20V Middle Power Transistor Datasheet Outline Parameter Value CPT3 V CEO I C Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1834 3) Low V CE(sat) V CE(sat) = 0.25V(Max.)
More informationOutline TO-220ACP. Inner Circuit. Construction Silicon carbide epitaxial planar type. Type
SiC Schottky Barrier Diode V R 65V Outline TO-22ACP () I F 2A Q C 6nC (3) (2) Features ) Shorter recovery time Inner Circuit () 2) Reduced temperature dependence 3) High-speed switching possible 4) High
More informationNew Designs. Not Recommended for 2SB1698 V CEO -30V -1.5A I C. Datasheet. PNP -1.5A -30V Middle Power Transistor. Outline
PNP -1.5A -30V Middle Power Transistor Datasheet Features Parameter Value 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2662 3) Low V CE(sat) V CE(sat) = -0.37V(Max.) (I C /I B =
More informationPhototransistor, side view type
Phototransistor, side view type RPM20PB The RPM20PB is a phototransistor in a sidefacing package. High sensitivity with 1.85 lens. Applications Optical control equipment Outline Receiver for sensors Features
More informationHigh efficiency, two-digit numeric displays
High efficiency, twodigit numeric displays LB02DN Series The LB02DN series were designed to meet the need for multidigit numeric displays. These LED numeric displays use GaAsP(red), GaP(green) for the
More informationQST3 V CEO -30V I C -5A. Datasheet. PNP -5A -30V Middle Power Transistor. Outline
PNP -5A -30V Middle Power Transistor Datasheet Features Parameter 1) Suitable for Middle Power Driver 2) Complementary NPN Types : QSX2 3) Low V CE(sat) V CE(sat) = -0.25V(Max.) (I C /I B = -2A / -40mA)
More informationHigh efficiency, two-digit numeric displays
High efficiency, twodigit numeric displays LB2DN Series The LB2 DN series were designed to meet the need for multidigit numeric displays. These LED numeric displays use GaAsP on GaP (red), GaP(green) for
More informationRGPR30NS40HR 400V 30A Ignition IGBT
4 3A Ignition IGBT B CES I C 4 3 3A CE(sat) (Typ.).6 E AS 3mJ Outline LPDS (TO-263S) / TO-262 (2) () (3) ()(2)(3) Features ) Low Collector - Emitter Saturation oltage Inner Circuit (2) 2) High Self-Clamped
More informationSingle Digit Surface Mount LED Numeric Display
Single Digit Surface Mount LED Numeric Display LF3011 A / K Series LF3011A / K series of Single Digit Surface Mount LED Numeric Display which the height of a letter 8mm have ROHM original structure that
More informationSCT3040KL N-channel SiC power MOSFET
N-channel SiC power MOSFET Datasheet V DSS R DS(on) (Typ.) I D P D 2V 4m 55A 262W Outline TO-247N () (2) (3) Inner circuit Features (2) ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery
More informationSingle Digit LED Numeric Display
Single Digit LED Numeric Display LA40 D / N Series LA40 D / N series is developed because of the demand for small single digit LED Numeric Display. Materials of emission are GaAsP on GaP, AlGalnP and GaP.
More informationRGCL60TK60 Data Sheet
RGCL6TK6 6V 3A Field Stop Trench IGBT Outline V CES 6V TO-3PFM I C( C) 8A V CE(sat) (Typ.).4V@I C =3A P D 54W () (2) (3) Features ) Low Collector - Emitter Saturation Voltage 2) Soft Switching 3) Pb -
More information2SB1275 V CEO -160V I C -1.5A. Datasheet. PNP -1.5A -160V Middle Power Transistor. Outline Parameter Value CPT3. Features
PNP -1.5A -160V Middle Power Transistor Datasheet Outline Parameter Value CPT3 Collector Features V CEO -160V I C -1.5A 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High
More informationTaping code. Reel size (mm) 2SCR512P MPT T ,000 NB
2SCR52P NPN 2.0A 30 Middle Power Transistor Datasheet Outline Parameter alue MPT3 CEO 30 I C 2.0A Base Collector Emitter Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR52P
More informationSCS240AE2HR SiC Schottky Barrier Diode
SiC Schottky Barrier Diode Datasheet R I F Q C 650 20A/40A* 31nC *(Per leg / Both legs) AECQ1 Qualified TO247 (1) (2) (3) Features Inner circuit 1) Shorter recovery time 2) Reduced temperature dependence
More informationSingle Digit LED Numeric Display
Single Digit LED Numeric Display LA601 B / L Series LA601 B / L series is designed to use in the light. Materials of emission are GaAsP on GaP, AlGalnP and GaP. This is the height of a letter 14.6mm, single
More informationRGTVX6TS65 650V 80A Field Stop Trench IGBT
65V 8A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 8A V CE(sat) (Typ.).5V P D 44W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching & Low Switching Loss
More informationTaping code. Reel size (mm) 2SCR513P MPT T ,000 NC
2SCR53P NPN.0A 50 Middle Power Transistor Datasheet Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR53P 3) Low CE(sat) CE(sat) =0.35(Max.) (I C /I B =500mA/25mA) 4) Lead Free/RoHS
More informationIMH21 V CEO V EBO. 20V 12V 600mA 10k R 1. Datasheet. Outline. Parameter Tr1 and Tr2 SMT6
NPN 600mA 20V Digital Transistors (Bias Resistor Built-in Transistors) For Muting. Datasheet Parameter Tr1 and Tr2 SMT6 V CEO V EBO I C R 1 20V 12V 600mA 10k Outline (3) (2) (1) (4) (5) (6) IMH21 SOT-457
More informationRGT00TS65D 650V 50A Field Stop Trench IGBT
65V 5A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 5A V CE(sat) (Typ.).65V P D 277W () (2) (3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss 3)
More informationSingle Digit LED Numeric Display
Single Digit LED Numeric Display LA601 B / L series is designed to use in the light. Materials of emission are GaAsP on GaP, AlGalnP and GaP. This is the height of a letter 14.6mm, single digit LED Numeric
More informationOutline TUMT3. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
Nch 3V.5A Power MOSFET Datasheet V DSS R DS(on) (Max.) 3V 24mW I D.5A Outline TUMT3 () (3) P D.8W (2) Features Inner circuit ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount
More informationM P E B WB. (unit : mm) Absolute Maximum Ratings (Ta=25ºC) SML-P12VT(R) SML-P12UT(R) (110)
PICOLED TM Datasheet Features Outline Ultra compact, thin size 1.0 0.6mm Original device technology enables high brightness and high reliability Size 1006 1006 (0402) (0402) 1.0 0.6mm 1.0 0.6mm (t=0.2mm)
More informationSingle Digit High Brightness LED Numeric Display
Single Digit High Brightness LED Numeric Display LAP40 D / N Series LAP40 D / N series are the numberical display units featuring ROHM s inhouse 4element(AlGaInP) highbrightness LED dies.their luminous
More informationS2307 N-channel SiC power MOSFET bare die
S237 N-channel SiC power MOSFET bare die V DSS R DS(on) (Typ.) 2V 45m I D 68A * Features ) Low on-resistance Inner circuit (2) 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel () *
More informationOutline. Inner circuit. DC/DC converters Tape width (mm) 10 Type Load Switch Basic ordering unit (pcs) 3,000 Taping code
Nch 3V 7A Power MOSFET Datasheet Outline V DSS 3V HUML22L8 R DS(on) at V (Max.) R DS(on) at 4.5V (Max.) I D 2.4mW 3.mW 7A P D 2.W () (2) (3) (6) (5) (4) (8) (3) (2) () (4) (5) (6) (7) Features ) Low on
More informationOutline. Inner circuit. Application Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 360 Taping code
Nch 6V 2A Power MOSFET Outline V DSS 6V TO-3PF R DS(on) (Max.).96W I D P D 2A 2W () (2)(3) Features ) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be 2V. 4)
More informationOutline. Inner circuit. Application Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 450 Taping code
Nch 6V 35A Power MOSFET Outline V DSS 6V TO-247 R DS(on) (Max.).2W I D P D 35A 2W (3) () (2) Features ) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be 2V.
More informationRGTH80TS65 650V 40A Field Stop Trench IGBT
65V A Field Stop Trench IGBT Datasheet Outline V CES 65V TO-247N I C( C) A V CE(sat) (Typ.).6V P D 234W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3) Low Switching
More informationOutline LPT(L) <TO-263AB> Inner circuit. DC/DC Converter Reel size (mm) 330
SCS22AJHR Automotive Grade SiC Schottky Barrier Diode V R I F Q C 65V 2A 3nC Outline LPT(L) (2) (3) (4) () Features ) AEC-Q qualified Inner circuit () 2) Low forward voltage 3) Negligible recovery
More informationRCX450N20 V DSS 200V 45A 40W. Nch 200V 45A Power MOSFET. Datasheet. Outline. Inner circuit. Features 1) Low on-resistance. 2) Fast switching speed.
Nch V 45A Power MOSFET Datasheet Outline V DSS V TO-2FM R DS(on) (Max.) 55mW I D P D 45A 4W (3) () (2) Features ) Low on-resistance. Inner circuit 2) Fast switching speed. 3) Drive circuits can be simple.
More informationSingle Digit High Brightness LED Numeric Display
Single Digit High Brightness LED Numeric Display LAP601 B / L Series LAP601 B / L series are the numberical display units featuring ROHM s inhouse 4element(AlGaInP) highbrightness LED dies.their luminous
More informationDimensions (Unit : mm) 2SB EIAJ : SC-62 (3) Emitter Abbreviated symbol: BA
Medium Power Transistor ( 32, 1A) / 2SA1515S / Features 1) Low CE(sat). CE(sat) =.2(Typ.) (IC / IB = ma / ma) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor Dimensions
More informationRGTV00TS65D 650V 50A Field Stop Trench IGBT
RGTVTS65D 65V 5A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 5A V CE(sat) (Typ.).5V P D 276W ()(2)(3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage (2) 2) High Speed
More informationRCD080N25 V DSS 250V 8A 20W. Nch 250V 8A Power MOSFET. Data Sheet. Outline. Inner circuit. Features 1) Low on-resistance. 2) Fast switching speed.
Nch 25V 8A Power MOSFET Outline V DSS 25V CPT3 R DS(on) (Max.) 3mW I D P D 8A 2W (SC-63) () (2) (3) Features ) Low on-resistance. Inner circuit 2) Fast switching speed. 3) Drive circuits can
More informationRGT30NS65D 650V 15A Field Stop Trench IGBT
RGT3NS6D 6V A Field Stop Trench IGBT Outline V CES 6V LPDS / TO-262 I C( C) A V CE(sat) (Typ.).6V P D 33W () (3) (2) () (2) (3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage 2) Low
More informationOutline TO-220AC. Symbol V RM I FSM I FRM P D. Tstg
SCS5KG SiC Schottky Barrier Diode Datasheet Outline R 200 TO220C () I F 5 Q C 20nC (3) (2) Features Inner circuit ) Shorter recovery time () 2) Reduced temperature dependence 3) Highspeed switching possible
More informationTaping code. Reel size (mm) 2SC5824 MPT T ,000 UP
NPN 3.0A 60 Middle Power Transistor Datasheet Outline Parameter alue MPT3 CEO 60 I C 3A Base Collector Emitter Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low CE(sat)
More informationDouble Digits High Brightness, LED Numeric Display
Double Digits High Brightness, LED Numeric Display LBP602 A / K2 Series LBP602 A / K2 series are the numberical display units featuring ROHM s inhouse 4element (AlGaInP) highbrightness LED dies.their luminous
More informationRGCL80TK60D Data Sheet
6V A Field Stop Trench IGBT Outline V CES 6V TO-3PFM I C( C) 2A V CE(sat) (Typ.).4V@I C =A P D 57W () (2) (3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage (2) 2) Soft Switching 3)
More informationS2301 N-channel SiC power MOSFET bare die
S23 N-channel SiC power MOSFET bare die V DSS R DS(on) (Typ.) I D 2V 8mW 4A* Features Inner circuit ) Low on-resistance (D) 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple
More informationSCS210AJ SiC Schottky Barrier Diode
SCS2J SiC Schottky Barrier Diode Datasheet Outline R I F 65 LPT(L) () Q C 5nC (2) (3) (4) Features Inner circuit ) Shorter recovery time () 2) Reduced temperature dependence 3) Highspeed switching
More informationRGT8BM65D 650V 4A Field Stop Trench IGBT
5V A Field Stop Trench IGBT Datasheet Outline V CES 5V TO-5 I C( C) A V CE(sat) (Typ.).5V P D W () (3) () Features Inner Circuit ) Low Collector - Emitter Saturation Voltage ) Low Switching Loss 3) Short
More informationSCT3040KL N-channel SiC power MOSFET
SCT34KL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 2V 4m 55A 262W Outline TO-247N () (2) (3) Inner circuit Features (2) ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery
More informationSCT3060AL N-channel SiC power MOSFET
SCT36AL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 65V 6m 39A 65W Outline TO-247N () (2) (3) Inner circuit (2) Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery
More informationRGS00TS65D 650V 50A Field Stop Trench IGBT
RGSTS65D 65V 5A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 5A V CE(sat) (Typ.).65V P D 326W () (2) (3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage (2) 2) Short Circuit
More informationSCS220AM SiC Schottky Barrier Diode
SiC Schottky Barrier Diode Datasheet R I F Q C 65 2 31nC Outline TO22FM (1) (2) Features Inner circuit 1) Shorter recovery time 2) Reduced temperature dependence 3) Highspeed switching possible (1) Cathode
More informationRGW00TK65 650V 50A Field Stop Trench IGBT
RGWTK65 65V 5A Field Stop Trench IGBT Outline V CES 65V TO-3PFM I C ( ) 26A V CE(sat) (Typ.).5V@I C =5A P D 89W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3)
More informationSCS220AJHR SiC Schottky Barrier Diode
SCS22AJHR SiC Schottky Barrier Diode R I F Q C 65 2A 31nC AECQ1 Qualifiedutline Outline LPT(L) (2) (3) (4) (1) Features 1) Shorter recovery time Inner circuit (1) 2) Reduced temperature dependence
More informationSCS208AJ SiC Schottky Barrier Diode
SiC Schottky Barrier Diode Datasheet R I F 65 8 Outline LPT(L) () Q C 3nC (2) (3) (4) Features ) Shorter recovery time Inner circuit () 2) Reduced temperature dependence 3) Highspeed switching
More informationDouble Digits High Brightness, LED Numeric Display
Double Digits High Brightness, LED Numeric Display LBP602 A / K2 Series LBP602 A / K2 series are the numberical display units featuring ROHM s inhouse 4element (AlGaInP) highbrightness LED dies.their luminous
More informationSCT3030AL N-channel SiC power MOSFET
SCT33AL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 65V 3mW 7A 262W Outline TO-247N () (2) (3) Inner circuit Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4)
More informationOutline CPT3. Base. Taping code. Reel size (mm) 2SC5103 CPT TL ,500 C5103
NPN 5A 60 Middle Power Transistor Datasheet Outline Parameter CEO I C alue 60 5A CPT3 Base Collector Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low CE(sat) CE(sat)
More informationRGTH60TS65D 650V 30A Field Stop Trench IGBT
RGTH6TS65D 65V 3A Field Stop Trench IGBT Datasheet Outline V CES 65V TO-247N I C( C) 3A V CE(sat) (Typ.).6V P D 94W ()(2)(3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage (2) 2) High
More informationRGT00TS65D 650V 50A Field Stop Trench IGBT
RGTTS65D 65V 5A Field Stop Trench IGBT Datasheet Outline V CES 65V TO-247N I C( C) 5A V CE(sat) (Typ.).65V 277W P D ()(2)(3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage 2) Low Switching
More informationMedium Power Transistor ( 32V, 1A)
Medium Power Transistor ( 32, 1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low CE(sat). CE(sat) =.2(Typ.) (IC / IB = ma / ma) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon
More informationLinear Regulator Application Information
Linear Regulator Application Information IC Product Name BD00HA5WEFJ Topology LDO Linear Regulator Type Voltage source Input Output 1 4.5V to 8.0V 1.8V, 500mA *1 2 4.5V to 8.0V 2.5V, 500mA *1 3 4.5V to
More informationSCT3060AL N-channel SiC power MOSFET
SCT36AL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 65V 6mW 39A 65W Outline TO-247N () (2) (3) Inner circuit Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4)
More informationS4108 N-channel SiC power MOSFET bare die
S48 N-channel SiC power MOSFET bare die V DSS R DS(on) (Typ.) 2V 8m I D 3A * Features ) Low on-resistance Inner circuit (2) 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel () * ()
More informationSCS205KG SiC Schottky Barrier Diode
SCS2KG SiC Schottky Barrier Diode Outline R 2 TO22C () I F Q C 7nC (3) (2) Features Inner circuit ) Shorter recovery time () 2) Reduced temperature dependence 3) Highspeed switching possible () Cathode
More informationSCT2H12NZ N-channel SiC power MOSFET
SCTHNZ N-channel SiC power MOSFET V DSS 7V R DS(on) (Typ.).5W I D P D 3.7A 35W Outline TO-3PFM Inner circuit () () (3) Features ) Low on-resistance ) Fast switching speed 3) Long creepage distance 4) Simple
More informationSCS220AE2 SiC Schottky Barrier Diode
SCSE SiC Schottky Barrier Diode R I F Q C 65 /* 5nC(Per leg) (*Per leg/ Both legs) Outline TO47 () () (3) Features Inner circuit ) Shorter recovery time ) Reduced temperature dependence 3) Highspeed switching
More informationSCT2750NY N-channel SiC power MOSFET
SCT75NY N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 7V 75mW 6A 57W Outline TO-68-L () () () Features Inner circuit ) Low on-resistance ) Fast switching speed ) Long creepage distance with
More informationMedium Power Transistor (32V, 1A)
Medium Power Transistor (3, A) SD664 / SD88 Features ) Low CE(sat) =.(Typ.) (lc / lb = ma / ma) ) Compliments SB3 / SB37 Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 4..3
More informationOutline TSST8. Inner circuit. (1) Drain (2) Drain (3) Drain (4) Gate. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
RTA45AP Pch -2V -4.5A Power MOSFET Datasheet V DSS R DS(on) (Max.) I D 2V 3m 4.5A P D.25W Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8). Outline
More informationLow Ohmic Thick Film Chip Resistors
Low Ohmic Thick Film hip Resistors MR Series Features 1) Very-low ohmic resistance from 47m is in lineup by thick-film resistive element. 2) ROHM resistors have obtained ISO91 / ISO / TS16949 certification.
More informationSCS220AE2HR SiC Schottky Barrier Diode
SCS22AE2HR SiC Schottky Barrier Diode R I F Q C 65 A/2A* 5nC *(Per leg / Both legs) AECQ Qualified TO247 () (2) (3) Features Inner circuit ) Shorter recovery time 2) Reduced temperature dependence 3) Highspeed
More informationS4103 N-channel SiC power MOSFET bare die
N-channel SiC power MOSFET bare die V DSS R DS(on) (Typ.) V 22mW I D 95A *1 Features 1) Low on-resistance Inner circuit 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to
More informationSCT3080AL N-channel SiC power MOSFET
N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 6V 8mW 3A 34W Outline TO-247N () (2) (3) Inner circuit Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to
More informationSCT3030KL N-channel SiC power MOSFET
SCT33KL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) 2V 3m Outline TO-247N I D 72A P D 339W () (2) (3) Inner circuit (2) Features ) Low on-resistance 2) Fast switching speed () * () Gate (2) Drain
More informationThick Film Chip Resistors
Thick Film Chip Resisrs MCR Series < Not for Aumotive application > Features 1) Full line up from ultra small size (15) 2512 with jumper type. 2) ROHM resisrs have obtained ISO91/ISO/TS16949 certification.
More informationSCT3080KL N-channel SiC power MOSFET
N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 2V 8m 3A 65W Outline TO-247N () (2) (3) Inner circuit (2) Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy
More informationSCT3017AL N-channel SiC power MOSFET
SCT37AL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 65V 7mW 8A 427W Outline TO-247N () (2) (3) Inner circuit Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4)
More informationSulfur Tolerant Chip Resistors
Sulfur Tolerant hip Resisrs TRR Series Datasheet Features 1) Special construction prevents sulfur gas penetration, significantly increasing reliability. 2) ROHM resisrs have obtained ISO91 / ISO / TS16949
More information