Features: Frequency Range:.1 2 GHz P3dB: +29 dbm Gain: 12.5 db Vdd =12 V Ids =5 ma Input and Output Fully Matched to 5 Ω Applications: Fiber optics communication systems Microwave and wireless communication systems Microwave and optical instrumentations Die size: 235 x 15 x 5 um Description: The MMA-123 is a broadband GaAs MMIC Traveling Wave Amplifier (TWA) with high output power and high gain over.1 to 2GHz frequency range. This amplifier is optimally designed for broadband high power applications requiring flat gain and high output power with excellent input and output matches over a.1 to 2GHz frequency range. Absolute Maximum Ratings: (Ta= 25 C)* SYMBOL PARAMETERS UNITS Min. Max. Vds Drain-Source Voltage V 12.5 Vg1 First Gate-Source Voltage V -2 Ig1 First Gate Current ma -1 1 Vg2 Second Gate-Source Voltage V -3.5 7 Ig2 Second Gate-Source Current ma -2 Pdiss Maximum Power Dissipation W 8 Pin max RF Input Power dbm 24 Toper Operating Temperature ºC -4 to +85 Tch Tstg Tmax Channel Temperature ºC +15 Storage Temperature ºC -55 to +165 Max. Assembly Temp (6 sec max) ºC +3 *Operation of this device above any one of these parameters may cause permanent damage. Page 1 of 7, Updated Juy 217
Electrical Specifications: Vds=12V, Vg1=-.8V, Vg2=open, Ids=5mA, Ta=25 C Z=5 ohm Parameter Units Min. Typ. Max. Frequency Range MHz.1 2, Gain (Typ / Min) db 11.5 12.5 Gain Flatness (Typ / Max) +/-db.5.8 Input RL(Typ/Max) db 9 1 Output RL(Typ/Max) db 8 1 Output P1dB(Typ/Min) dbm 26.5 27 Output IP3 (1) dbm 37 Output P3dB(Typ/Min) dbm 28.5 29 Operating Current at P1dB 55 ma 5 (Typ/Max) Thermal Resistance C /W 8 (1) Output IP3 is measured with two tones at output power of 1 dbm/tone separated by 2 MHz. Page 2 of 7, Updated Juy 217
Typical RF Performance: Vds=12V, Vg1=-.75V, Vg2=2V, Ids=5mA, Z=5 ohm, Ta=25 ºC S11, S22, S22 (db) 2 15 1 5-5 -1-15 DB( S(1,1) ) DB( S(2,1) ) DB( S(2,2) ) K-factor 5 45 4 35 3 25 2 15 1 5 K() -2 5 1 15 2 25 3 35 4 Frequency (GHz) 5 1 15 2 25 3 35 4 Frequency (GHz) S11, S21, and S22 vs. Frequency K-factor vs. Frequency P-1 and P-3 vs. Frequency Pout, and Ids vs. Pin Page 3 of 7, Updated Juy 217
Mechanical Information: Top view Vd_Aux Vdd 1 45 235 15 Vg2 RF_IN 15 735 232 RF_OUT Vg1 225 235 The units are In [um]. Page 4 of 7, Updated Juy 217
Applications The MMA123 traveling wave amplifier is designed for use as a general purpose wideband power stage in microwave communication systems, and test equipments. It is ideally suited for broadband applications requiring a flat gain response and excellent port matches over a.1 to 2 GHz frequency range. Biasing and Operation The recommended bias conditions for best performance for the MMA123 are VDD = 12V, IDD = 5mA. To achieve these drain current levels, Vg1 is typically -.8V, and Vg2 is +2V. No other bias supplies or connections to the device are required for.1 to 2 GHz operation. The gate voltage (Vg1) should be applied prior to the drain voltage (Vd1) during power up and removed after the drain voltage during power down. The MMA123 is a DC coupled amplifier. External coupling capacitors are needed on RFIN and RFOUT ports. The drain bias pad is connected to RF and must be decoupled to the lowest operating frequency. An auxiliary drain contacts is provided when performance below.1 GHz in required. Connect external capacitors to ground to maintain input and output VSWR at low frequencies (see additional application note). Do not apply bias to these pads. The second gate (Vg2) can be used to obtain 3 db (typical) dynamic gain control. For highest gain operation, Vg2 voltage must be set at +2V. Assembly Techniques GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly. MMIC ESD precautions, handling considerations, die attach and bonding methods are critical factors in successful GaAs MMIC performance and reliability. Page 5 of 7, Updated Juy 217
MVL48X14MFH5R-B.1uF Vd1 1pF Vg2 MVL48X14MFH5R-B.1uF GOWANDA C1FL1938G6.26uH RF_OUT RF_IN LSB1515B11M2H5R-B 1pF LSB1515B11M2H5R-B 1pF.1uF Vg1 Assembly Diagram Page 6 of 7, Updated Juy 217
Demo module DC and RF pin assignment Page 7 of 7, Updated Juy 217