INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFRED TM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits Industry standard TO-247AD package with extended leads Benefits Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less / no snubbing Applications Induction cooking systems Microwave Ovens Resonant Circuits G IRG4PH40UD2-E C E n-channel PD - 96781A UltraFast CoPack IGBT V CES = 1200V V CE(on) typ. = 2.43V @V GE = 15V, I C = 21A TO-247AD Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 1200 V I C @ T C = 25 C Continuous Collector Current 41 A I C @ T C = 0 C Continuous Collector Current 21 I CM Pulse Collector CurrentÃc 82 I LM Clamped Inductive Load current d 82 I F @ Tc = 0 C Diode Continuous Forward Current I FM Diode Maximum Forward Current 40 V GE Gate-to-Emitter Voltage ±20 V P D @ T C = 25 C Maximum Power Dissipation 160 W P D @ T C = 0 C Maximum Power Dissipation 65 T J Operating Junction and -55 to +150 T STG Storage Temperature Range C Soldering Temperature, for sec. Mounting Torque, 6-32 or M3 screw 300 (0.063 in. (1.6mm) from case) lbfyin (1.1Nym) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R θjc Junction-to-Case- IGBT 0.77 C/W R θjc Junction-to-Case- Diode 2.5 R θcs Case-to-Sink, flat, greased surface 0.24 R θja Junction-to-Ambient, typical socket mount 40 Wt Weight 6 (0.21) g (oz.) www.irf.com 1 4/25/07
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage e 1200 V VGE = 0V, I C = 250μA V (BR)ECS Emitter-to-Collector Breakdown Voltage 18 V V GE = 0V, I C = 1.0A ΔV (BR)CES /ΔT J Temperature Coeff. of Breakdown Voltage 0.43 V/ C V GE = 0V, I C = 1mA 2.43 3.1 V I C = 21A V GE = 15V V CE(on) Collector-to-Emitter Saturation Voltage 2.97 I C = 41A See Fig.2, 5 2.47 I C = 21A, T J = 150 C V GE(th) Gate Threshold Voltage 3.0 6.0 V CE = V GE, I C = 250μA ΔV GE(th) /ΔT J Threshold Voltage temp. coefficient -11 mv/ C V CE = V GE, I C = 250μA gfe Forward Transconductance f 16 24 S V CE = 0V, I C = 21A I CES Zero Gate Voltage Collector Current 250 μa V GE = 0V, V CE = 1200V 5000 V GE = 0V, V CE = 1200V, T J = 150 C V FM Diode Forward Voltage Drop 3.4 3.8 V I F = A See Fig.13 3.3 3.7 I F = A, T J = 150 C I GES Gate-to-Emitter Leakage Current ±0 na V GE = ±20V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 0 150 I C = 21A Q ge Gate-to-Emitter Charge (turn-on) 18 24 nc V CC = 400V See Fig.8 Q gc Gate-to-Collector Charge (turn-on) 34 50 V GE = 15V t d(on) Turn-On delay time 22 t r Rise time 26 ns I C = 21A, V CC = 800V t d(off) Turn-Off delay time 0 140 V GE = 15V, R G = Ω t f Fall time 200 300 Energy losses include "tail" and E on Turn-On Switching Loss 1950 diode reverse recovery. E off Turn-Off Switching Loss 17 μj See Fig. 9,, 11, 18 E tot Total Switching Loss 3660 4490 t d(on) Turn-On delay time 21 T J = 150 C, See Fig. 9,, 11, 18 t r Rise time 25 ns I C = 21A, V CC = 800V t d(off) Turn-Off delay time 220 V GE = 15V, R G = Ω t f Fall time 380 Energy losses include "tail" and E TS Total Switching Loss 6220 μj diode reverse recovery. L E Internal Emitter Inductance 13 nh Measured 5mm from package C ies Input Capacitance 20 V GE = 0V C oes Output Capacitance 99 pf V CC = 30V, See Fig.7 C res Reverse Transfer Capacitance 12 f = 1.0MHz t rr Diode Reverse Recovery Time 50 76 ns T J =25 C See Fig 72 1 T J=125 C 14 I F = 8.0A I rr Diode Peak Reverse Recovery Current 4.4 7.0 A T J =25 C See Fig 5.9 8.8 T J=125 C 15 V R = 200V Q rr Diode Reverse Recovery Charge 130 200 nc T J =25 C See Fig 250 380 T J=125 C 16 di/dt = 200A/μs di (rec)m /dt Diode Peak Rate of Fall of Recovery 2 A/μs T J =25 C See Fig During t b 180 T J=125 C 17 2 www.irf.com
Load Current ( A ) IRG4PH40UD2-E 50 45 40 35 30 25 Square wave: 60% of rated voltage I Ideal diodes 20 15 5 0 For both: Duty cycle : 50% Tj = 125 C Tsink = 90 C Gate drive as specified Power Dissipation = 35W 0.1 1 0 f, Frequency ( khz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 0 0 I C, Collector-to-Emitter Current (A) T = 150 o J C o T J = 25 C V GE = 15V 20μs PULSE WIDTH 1 1 V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T = 150 o J C T = 25 o J C V CC = 50V 5μs PULSE WIDTH 1 5 6 7 8 9 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current(A) 50 40 30 20 V CE, Collector-to-Emitter Voltage(V) 4.0 3.0 2.0 V GE = 15V 80 us PULSE WIDTH I C = I C = 42 A 21 A I C =.5 A 0 25 50 75 0 125 150 T C, Case Temperature ( C) 1.0-60 -40-20 0 20 40 60 80 0 120 140 160 T J J, Junction, Temperature ( C ( ) C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thjc ) 0.1 D = 0.50 0.20 0. 0.05 PDM t1 0.02 SINGLE PULSE t2 0.01 (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t2 0.01 2. Peak T J = PDM x Z thjc + TC 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
Total Swiching Losses (mj) Total Switching Losses (mj) Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) IRG4PH40UD2-E 4000 3500 3000 V GS = 0V, f = 1 MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc C oes = C ce + C gc 20 16 V CE = 400V I C = 21A 2500 Cies 12 2000 1500 00 Coes 8 4 500 Cres 0 1 V CE, Collector-toEmitter-Voltage(V) 0 0 20 40 60 80 0 120 Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 5 4.8 V CE = 800V V GE = 15V T J = 25 C 0 R G = Ω V GE = 15V V CC = 800V 4.6 I C = 21A 4.4 4.2 I C = 42A I C = 21A 4 3.8 I C =.5A 3.6 0 20 30 40 50 R G, Gate Resistance (Ω) 1-60 -40-20 0 20 40 60 80 0 120 140 160 T J, Junction Temperature ( C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature www.irf.com 5
Total Swiching Losses (mj) IRG4PH40UD2-E 16 14 12 8 6 4 R G = Ω T J = 150 C V CE = 800V V GE = 15V I C, Collector-to-Emitter Current (A) 00 0 V GE = 20V o T J = 125 C 2 0 20 30 40 50 I C, Collecto-to-Emitter (A) SAFE OPERATING AREA 1 1 0 00 000 V CE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com
Fig. 14 - Typical Reverse Recovery vs. di f /dt Fig. 15 - Typical Recovery Current vs. di f /dt Fig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)m /dt vs. di f /dt www.irf.com 7
Same type device as D.U.T. +Vge Vce 90% Vge 80% of Vce 430μF D.U.T. Ic % Vce Ic 90% Ic 5% Ic td(off) tf Fig. 18a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t1+5μs Eoff = Vce ic Ic dt dt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt dt = tx % Ic Vcc td(on) t1 Vce tr 90% Ic 5% Vce Ipk Ic t2 Eon = Vce ie Ic dt dt Vce t1 t2 DUT VOLTAGE AND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr Vcc DIODE RECOVERY WAVEFORMS t4 Erec Vd id Ic dt dt = t3 t3 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8 www.irf.com
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit 00V L V * c D.U.T. 0-800V R L = 800V 4 X I C @25 C 50V 6000μF 0V Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9
TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information Notes : This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WIT H AS SEMBL Y LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H" INTERNATIONAL RECTIFIER LOGO AS S E MB LY LOT CODE IRFPE30 035H 56 57 PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Notes : This part marking information applies to devices produced before 02/26/2001 or for parts manufactured in GB. EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 3A1Q INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE Notes: Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20) V CC =80%(V CES ), V GE =20V, L=μH, R G = Ω (figure 19) ƒpulse width 80μs; duty factor 0.1%. Pulse width 5.0μs, single shot. IRFPE30 3A1Q 9302 PART NUMBER DATE CODE (YYWW) YY = YEAR WW = WEEK TO-247AD package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information. 04/07 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/