High Voltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features 25 V to V (Min) V CEO(sus) 1 A Rated Collector Current Popular TO 22 Plastic Package These Devices are Pb Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol TIP7 TIP8 TIP5 Unit Collector Emitter Voltage V CEO 25 3 Vdc Collector Base Voltage V CB 35 5 Vdc Emitter Base Voltage V EB 5. Vdc Collector Current Continuous Peak I C 2. Adc Base Current I B.6 Adc Total Power Dissipation @ T C = 25 C Derate above 25 C Total Power Dissipation @ T C = 25 C Derate above 25 C Unclamped Inducting Load Energy (See Figure 8) P D.32 P D 2..16 W W/ C W W/ C E 2 mj 1 2 3 AMPERE POWER TRANSISTORS NPN SILICON 25 3 VOLTS WATTS TO 22AB CASE 221A STYLE 1 TIPxx = Device Code xx = 7, 8, or 5 A = Assembly Location Y = Year WW = Work Week G = Pb Free Package MARKING DIAGRAM TIPxxG AYWW Operating and Storage Junction Temperature Range T J, T stg 65 to +15 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC 3.125 C/W ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Thermal Resistance, Junction to Ambient R JA 62.5 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 211 October, 211 Rev. 9 1 Publication Order Number: TIP7/D
ÎÎ ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic ÎÎ Symbol Min Î Max Unit ÎÎ OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (Note 1) TIP7ÎÎ V CEO(sus) ÎÎ (I C = 3 madc, I B = ) TIP8Î 25 3Î Vdc TIP5 ÎÎ Collector Cutoff Current I (V CE = 15 Vdc, I B = ) TIP7ÎÎ CEO madc (V CE = 2 Vdc, I B = ) TIP8Î Î (V CE = 3 Vdc, I B = ) TIP5 ÎÎ Collector Cutoff Current I (V CE = 35 Vdc, V BE = ) TIP7ÎÎ CES madc ÎÎ (V CE = Vdc, V BE = ) TIP8Î Î (V CE = 5 Vdc, V BE = ) TIP5 Emitter Cutoff Current I (V BE = 5. Vdc, I C ÎÎ EBO madc = ) ÎÎ ON CHARACTERISTICS (Note 1) Î DC Current Gain h FE ÎÎ (I C =.3 Adc, V CE = 1 Vdc) Î (I C = Adc, V CE = 1 Vdc) Î 3 15 1 Collector Emitter Saturation Voltage ÎÎ V CE(sat) Î Vdc (I C = Adc, I B = Adc) Base Emitter On Voltage V (I C = Adc, V CE = 1 Vdc) ÎÎ BE(on) Î 1.5 Î Vdc ÎÎ DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product ÎÎ f T 1 Î (I C = Adc, V CE = 1 Vdc, f = 2. MHz) Î MHz Small Signal Current Gain h (I C = Adc, V CE ÎÎ fe 25 Î = 1 Vdc, f = khz) 1. Pulse Test: Pulse width 3 s, Duty Cycle 2.%. ORDERING INFORMATION Device Package Shipping TIP7 TO 22 5 Units / Rail TIP7G TO 22 5 Units / Rail TIP8 TO 22 5 Units / Rail TIP8G TO 22 5 Units / Rail TIP9 TO 22 5 Units / Rail TIP9G TO 22 5 Units / Rail TIP5 TO 22 5 Units / Rail TIP5G TO 22 5 Units / Rail 2
T A T C PD, POWER DISSIPATION (WATTS) 3 2 1 3 2 1 T A T C 2 6 8 1 12 1 T C, CASE TEMPERATURE ( C) Figure 1. Power Derating 16 TURN-ON PULSE APPROX +11 V V in V EB(off) t 1 APPROX +11 V V in t 3 t 2 TURN-OFF PULSE V CC R B and R C VARIED TO OBTAIN DESIRED CURRENT LEVELS. V in R C R B C jd << C eb t 1 7. ns -. V 1 < t 2 < 5 s t 3 < 15 ns DUTY CYCLE 2.% APPROX - 9. V Figure 2. Switching Time Equivalent Circuit SCOPE t, TIME ( s) μ.5.5.1 t r t d.5.5 2. Figure 3. Turn On Time T J = 25 C V CC = 2 V I C /I B = 5. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED.7.5.3.7.5.3.1.1 D =.5.5.1 SINGLE PULSE Z JC(t) = r(t) R JC R JC = 3.125 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) - T C = P (pk) Z JC(t).5.5 2. 5. 1 2 5 1 2 5 t, TIME (ms) Figure. Thermal Response P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t 2 k 3
IC, COLLECTOR CURRENT (AMPS) 5. 2..5.5 T C 25 C ms SECONDARY BREAKDOWN LIMITED THERMALLY LIMITED @ 25 C BONDING WIRE LIMITED CURVES APPLY BELOW RATED V CEO 5. 1 2 5 1 2 5 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) dc TIP7 TIP8 TIP5 1 s 5 s There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 15 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 1% provided T J(pk) 15 C. T J(pk) may be calculated from the data in Figure. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active Region Safe Operating Area t, TIME ( s) μ 5. 2..5.5.5.5 t s t f Figure 6. Turn Off Time T J = 25 C V CC = 2 V I C /I B = 5. 2. V, TEMPERATURE COEFFICIENTS (mv/ C) θ +.5 + 3.5 + 2.5 *APPLIES FOR I C /I B h FE /5 + 1.5 + 25 C to + 15 C +.5 VC FOR V CE(sat) -.5-55 C to + 25 C + 25 C to + 15 C - 1.5 VB FOR V BE - 55 C to + 25 C - 2.5.5.5 2. Figure 7. Temperature Coefficients INPUT 5 5 MJE171 V BB1 = 1 V R BB1 = 15 R BB2 = 1 V BB2 = V CE MONITOR TUT R S = Note A: Input pulse width is increased until I CM =.63 A. 1 mh V CC = 2 V I C MONITOR INPUT VOLTAGE COLLECTOR CURRENT COLLECTOR VOLTAGE V - 5 V.63 A V V CER 1 V V CE(sat) t w 3 ms (SEE NOTE A) 1 ms Figure 8. Inductive Load Switching
h FE, DC CURRENT GAIN 2 1 6 2 1 6.. T J = 15 C 25 C - 55 C V CE = 1 V 2...6..6 2. Figure 9. DC Current Gain V, VOLTAGE (VOLTS) 1. 1.2.8.6. V BE(sat) @ I C /I B = 5. V V BE(on) @ V CE = V V CE(sat) @ I C /I B = 5. V..6..6 Figure 1. On Voltages 2. 5
PACKAGE DIMENSIONS H Q Z L V G B 1 2 3 N D A K F T U S R J TO 22 CASE 221A 9 ISSUE AG C T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y1.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.57.62 1.8 15.75 B.38.5 9.66 18 C 6 9.7.82 D 5.36.6.91 F 2 61 3.61.9 G.95 5 2.2 2.66 H 1 61 2.8.1 J.1 5.36.6 K.5.562 12.7 1.27 L.5.6 1.15 1.52 N 9 1.83 5.33 Q 2 2.5 3. R.8 1 2. 2.79 S.5.55 1.15 1.39 T 35 55 5.97 6.7 U..5. 1.27 V.5 --- 1.15 --- Z ---.8 --- 2. STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 33 675 2175 or 8 3 386 Toll Free USA/Canada Fax: 33 675 2176 or 8 3 3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 282 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 21 33 79 291 Japan Customer Focus Center Phone: 81 3 5817 15 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative TIP7/D