FDP365U N-Channel PowerTrench MOSFET V, 8 A, 8 mω Features Applications March 3 R DS(on) = 5 mω ( Typ.)@ V GS = V, I D = 8 A Consumer Appliances High Performance Trench Technology for Extremely Low RDS(on) Synchronous Rectification Low Miller Charge Battery Protection Circuit UIS Capability (Single Pulse/Repetitive Pulse) Motor Drivers and Uninterruptible Power Supplies Micro Solar Inverter D G DS TO- G S MOSFET Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter FDP365U Unit V DSS Drain to Source Voltage V V GSS Gate to Source Voltage ± V Drain Current -Continuous 8 I D -Pulsed (Note ) 3 A P D Power Dissipation 55 W E AS Single Pulsed Avalanche Energy (Note ) 66 mj T J, T STG Operating and Storage Temperature -55 to 75 C T L Maximum lead temperature soldering purposes, /8 from case for 5 seconds Thermal Characteristics R θja Thermal Resistance, Junction to Ambient, Max. 6 C/W R θjc Thermal Resistance, Junction to Case, Max..59 C/W Package Marking and Ordering Information 3 C Device Marking Device Reel Size Tape Width Quantity FDP365U FDP365U Tube N/A 5 units 6 Fairchild Semiconductor Corporation
Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 5µA, V GS = V - - V V I DSS Zero Gate Voltage Drain Current DS = 8V - - µa V GS = V T C =5 C - - 5 µa I GSS Gate to Source Leakage Current V GS = ±V - - ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = -5µA 3.5 4.5 5.5 V r DS(on) Drain to Source On Resistance Dynamic Characteristics V GS = V, I D = 8A - 5 8 V GS = V, I D = 4A - 3 5 V GS =V, I D =4A,T J =75 o C - 3 37 C iss Input Capacitance - 45 55 pf V DS = 5V,V GS = V C oss Output Capacitance - 485 78 pf f=mhz C rss Reverse Transfer Capacitance - 89 8 pf Q g(tot) Total Gate Charge V GS = V to V - 49 69 nc Q V DD = 5V g(th) Threshold Gate Charge V GS = V to V - 7 9.8 nc I D = 8A Q gs Gate to Source Gate Charge - 3 - nc Q gd Gate to Drain Charge - 6 - nc Resistive Switching Characteristics t (on) Turn-On Time - - 64 ns t d(on) Turn-On Delay Time - 5 7 ns t V DD = 5V, I D = 8A r Rise Time - 6 9 ns V GS = V, R GS = 5.Ω t d(off) Turn-Off Delay Time - 3 5 ns t f Fall Time - 4 6 ns t (off) Turn-Off Time - - 78 ns Unit mω Drain-Source Diode Characteristics V SD Source to Drain Diode Forward Voltage I SD = 8A -.99.5 V I SD = 4A -.88. V t rr Reverse Recovery Time - 7 5 ns I s = 4 A, di/dt = A/µs Q rr Reverse Recovery Charge - 33 nc Notes:. Pulse Test:Pulse Width<3us,Duty Cycle<.%. L=.3mH, I AS = 64A, V DD =5V, R G =5 Ω, Starting T J =5 o C 6 Fairchild Semiconductor Corporation
Typical Characteristics T J = 5 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 6 4 V GS = V V GS = V PULSE DURATION = 8µs DUTY CYCLE =.5%MAX V GS = 8V V GS = 7V 3 4 5 V DS, DRAIN TO SOURCE VOLTAGE (V).8.4..6..8 Figure. On Region Characteristics I D = 8A V GS = V.4-8 -4 4 8 6 T J, JUNCTION TEMPERATURE ( o C) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 5 4 3 V GS = 7V PULSE DURATION = 8µs DUTY CYCLE =.5%MAX 4 6 8 I D, DRAIN CURRENT(A) V GS = 8V V GS = V V GS = V Figure. Normalized On-Resistance vs Drain Current and Gate Voltage RDS(on), ON-RESISTANCE (mω) 6 5 4 3 I D = 8A PULSE DURATION = 8µs DUTY CYCLE =.5%MAX T J = 75 o C 8 4 6 8 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) 8 6 4 PULSE DURATION = 8µs DUTY CYCLE =.5%MAX T J = 75 o C 4 6 8 V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics T J = -55 o C IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 75 o C T J = -55 o C E-3...4.6.8.. V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 6 Fairchild Semiconductor Corporation 3
Typical Characteristics T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) IAS, AVALANCHE CURRENT(A) 8 6 4 3 4 5 6 Figure 7. V DD = 45V V DD = 5V Q g, GATE CHARGE(nC) V DD = 55V Gate Charge Characteristics T J = 5 o C CAPACITANCE (pf) C iss C oss C rss f = MHz V GS = V. V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage I D, DRAIN CURRENT (A) 8 6 4 PACKAGE MAY LIMIT CURRENT IN THIS REGION VGS=8V VGS=V -3 - - 3 t AV, TIME IN AVALANCHE(ms) 5 5 75 5 5 75 T C, CASE TEMPERATURE ( o C) Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous Drain Current vs Ambient Temperature ID, DRAIN CURRENT (A) 5 OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) us us ms ms SINGLE PULSE DC T J=MAX RATED T c=5 o C. V DS, DRAIN TO SOURCE VOLTAGE (V) P(PK), PEAK TRANSIENT POWER (W) 5 T C = 5 o C V GS = V FOR TEMPERATURES ABOVE 5 o C DERATE PEAK CURRENT AS FOLLOWS: 4 I = I 5 75 T c ---------------------- 5 3 SINGLE PULSE -5-4 -3 - - t, PULSE WIDTH (s) Figure. Forward Bias Safe Operating Area Figure. Single Pulse Maximum Power Dissipation 6 Fairchild Semiconductor Corporation 4
Typical Characteristics T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA.. DUTY CYCLE-DESCENDING ORDER D =.5...5.. SINGLE PULSE E-3-5 -4-3 - - t, RECTANGULAR PULSE DURATION(s) Figure 3. Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T c 6 Fairchild Semiconductor Corporation 5
Mechanical Dimensions TO-B3 6 Fairchild Semiconductor Corporation 6
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