APN 1-1 GHz Advance Datasheet Revision: April Applications Point-to-Point Digital Radios Point-to-Multipoint Digital Radios VSAT Test Instrumentation X = 3 um Y = 3 um Product Features RF frequency: 1 to 1 GHz Linear Gain: 13 db typ. P1dB: 39 dbm typ Psat: dbm typ. PAE% @ Psat: 37% typ. Die Size: 1. sq. mm..um GaN HEMT Process Product Description The APN monolithic GaN HEMT amplifier is a broadband, balanced Single Stage power device, designed for use in SATCOM Terminals and point-to-point digital radios. To ensure rugged and reliable operation, HEMT devices are fully passivated. Both bond pad and backside metallization are Au-based that is compatible with epoxy and eutectic die attach methods. mil SiC substrate DC Power: VDC @ 1 ma Performance Characteristics (Ta = C) Specification Min Typ Max Unit Frequency 1 1 GHz Linear Gain 1 13 db Input Return Loss db Output Return Loss db P1dB (Pulsed) 39 dbm Psat (Pulsed). dbm PAE @ Psat 37 % PGain @ Pin=3 dbm 9. db Vd1=Vd1a V Vg, Vg1a -3. V Id1 ma Id1a ma Absolute Maximum Ratings (Ta = C) Parameter Min Max Unit Vd1=Vd1a 1 V Id1, Id1a ma Vg1, Vg1a - V Input drive level TBD dbm Assy. Temperature 3 deg. C (TBD seconds) 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) 1-711 E-mail: as-mps.sales@ngc.com Page 1
Input Return Loss (db) Output Return Loss (db) Pout (dbm),, PAE% APN 1-1 GHz Advance Datasheet Revision: April Measured On-Wafer Performance Characteristics (Typical Performance at C) Vd1 = Vd1a = V, Id1, Id1a = ma* Linear Gain vs. Frequency Power**, Gain, PAE% vs. Frequency 1 1 3 1 1 1 7 9 1 11 1 13 1-1 - Linear Gain @ Pin= dbm PGain@Pin=3dBm (db) P1dB (dbm) Psat (dbm) PAE% @ PSat Max PAE% 9 1 11 1 13 1 Input Return Loss vs. Frequency Output Return Loss vs. Frequency - - -1-1 - - - - - - -3-3 - - - 1 1 1 1-1 1 1 1 * Pulsed-Power On-Wafer 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) 1-711 E-mail: as-mps.sales@ngc.com Page
Id1 (ma) Pout (dbm),, PAE% Pout (dbm) PAE% APN 1-1 GHz Advance Datasheet Revision: April Measured On-Wafer Performance Characteristics (Typical Performance at C) Vd1 = Vd1a = V, Id1, Id1a = ma* Pout & Gain Vs. vs. Pin PAE% vs. Pin 1 Gain 1 1 3 3 1 Pout Gain 1 GHz Gain 11 GHz 1 Gain 1 GHz Gain 13 GHz Pout 1 GHz Pout 11 GHz Pout 1 GHz Pout 13 GHz 1 1 1 1 3 3 1 1 GHz 11 GHz 1 GHz 13 GHz 1 1 1 1 3 3 Id vs. Pin Pout, Gain & PAE% vs. Frequency 11 1 9 7 3 3 1 Id1 1 GHz Id1 11 GHz Id1 1 GHz Id1 13 GHz 1 1 1 1 3 3 1-1 - Linear Gain @ Pin= dbm PGain@Pin=3dBm (db) P1dB (dbm) Psat (dbm) PAE% @ PSat Max PAE% 9 1 11 1 13 1 * On-Wafer Pulsed-Power 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) 1-711 E-mail: as-mps.sales@ngc.com Page 3
Id (ma) Power (dbm), Gain (db), PAE% Power (dbm) PAE% APN 1-1 GHz Advance Datasheet Revision: April Measured Fixtured Performance Characteristics (Typical Performance at C) Vd1 = Vd1a = V, Id = Id1+Id1a = 1 ma* Pout, Gain vs. Pin PAE% vs. Pin 1 1 1 1 Gain @ 1GHz Gain @ 11GHz Gain @ 1GHz Gain @ 13GHz Gain @ 1GHz Pout @ 1GHz Pout @ 11GHz Pout @ 1GHz Pout @ 13GHz Pout @ 1GHz 1 3 3 1 3 3 3 3 3 1 1 1 1 PAE @ 1GHz PAE @ 11GHz PAE @ 1GHz PAE @ 13GHz PAE @ 1GHz 1 3 Pin (dbm) Id vs. Pin Pout, Gain & PAE% vs. Frequency 1 19 1 17 1 13 1 11 1 9 7 3 1 Id @ 1GHz Id @ 11GHz Id @ 1GHz Id @ 13GHz Id @ 1GHz 1 3 3 1 Gain @ Pin=dBm P1dB (dbm) P3dB (dbm) PAE% @ P3dB PAE% Max 1 11 1 13 1 * CW Fixture 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) 1-711 E-mail: as-mps.sales@ngc.com Page
Id (ma) Power (dbm), Gain (db), PAE% Power (dbm) PAE% APN 1-1 GHz Advance Datasheet Revision: April Measured Fixtured Performance Characteristics (Typical Performance at C) Vd1 = Vd1a = V, Id = Id1+Id1a = 1 ma* Pout, Gain vs. Pin PAE% vs. Pin 1 1 1 1 Gain @ 1GHz Gain @ 11GHz Gain @ 1GHz Gain @ 13GHz Gain @ 1GHz Pout @ 1GHz Pout @ 11GHz Pout @ 1GHz Pout @ 13GHz Pout @ 1GHz 1 3 3 1 3 3 3 3 3 1 1 1 1 PAE @ 1GHz PAE @ 11GHz PAE @ 1GHz PAE @ 13GHz PAE @ 1GHz 1 3 Id vs. Pin Pout, Gain & PAE% vs. Frequency 1 19 1 17 1 13 1 11 1 9 7 3 1 Id @ 1GHz Id @ 11GHz Id @ 1GHz Id @ 13GHz Id @ 1GHz 1 3 3 1 Gain @ Pin=dBm P1dB (dbm) P3dB (dbm) PAE% @ P3dB PAE% Max 1 11 1 13 1 * CW Fixture 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) 1-711 E-mail: as-mps.sales@ngc.com Page
Id (ma) Power (dbm), Gain (db), PAE% Power (dbm) PAE% APN 1-1 GHz Advance Datasheet Revision: April Measured Fixture Performance Characteristics (Typical Performance at C) Vd1 = Vd1a = V, Id = Id1+Id1a = 1 ma* Pout, Gain vs. Pin PAE% vs. Pin 1 1 1 1 Gain @ 1GHz Gain @ 11GHz Gain @ 1GHz Gain @ 13GHz Gain @ 1GHz Pout @ 1GHz Pout @ 11GHz Pout @ 1GHz Pout @ 13GHz Pout @ 1GHz 1 3 3 1 3 3 3 3 3 1 1 1 1 PAE @ 1GHz PAE @ 11GHz PAE @ 1GHz PAE @ 13GHz PAE @ 1GHz 1 3 Id vs. Pin Pout, Gain & PAE% vs. Frequency 1 19 1 17 1 13 1 11 1 9 7 3 1 Id @ 1GHz Id @ 11GHz Id @ 1GHz Id @ 13GHz Id @ 1GHz 1 3 3 1 Gain @ Pin=dBm P1dB (dbm) P3dB (dbm) PAE% @ P3dB PAE% Max 1 11 1 13 1 * CW Fixture 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) 1-711 E-mail: as-mps.sales@ngc.com Page
APN 1-1 GHz Advance Datasheet Revision: April Measured On-Wafer Performance Characteristics (Typical Performance at C) Vd1 = Vd1a = V, Id1, Id1a = ma* Freq GHz S11 Mag S11 Ang S1 Mag S1 Ang S1 Mag S1 Ang S Mag S Ang....7-17. -.1.. -. -9.1..3-19.171.7. -179..73...7.79-1.17 177.9.131. -17.9 -.33..3-3. 1.7..9 1.1.79 3. 9..71.7-9.9 9.11.17.1 -.1 -.971. 7. 9.99.9. 1.317 1. 3. 9..9.77-1.77...171 17.31-9.1.. -1.7.33.7. 13.937 7. 1....73-13.7 1.9... -13.9. 1. 39.3..3 11.7 3.3 1...9. -13.93 13..33 1.1 13.1-37.99.. 9.7.7.1.37 97.37.3 11.... -.317 1..3.3 117.1-7.11.. 3.131 7.99.9. -.3 79. 11...37.1 -.13 11.7.7 3.97-111.7 9.1.. 3.37-19.991..9 -.3.3 1...33. 179.7.79.7.77 -.9 7..1. 1.99.7.. -71..7 1....1.93 7.1.991 7.9...1. -39.117-11...9-3.3 7.393 13. 7..1.33 1.77-7.9 1.7 9.3 1.1 11.7.17. -. -7...3-9. 9.3 13. 7..17.17 13.37-11. 1.1 1.9 -.3...7-9.71-3.39.17.17-111.73 -.33 1...17.19 1.3-119. 1.7 1.971-37.3.3.3. -1. -17.3.13. -1. -7.7 1...117. -13. 93.7 1..1-7.9-11.71.3. -. -1.9.9.17-119.7-7.9. 9..9.73-13.9 73.73 1.1.991-99.133-7.13.7. -177..799.77.17-1.71-77.1. 9..97. -11.37 7.3 3.3 9.979-133. -3.9.1. 1.77.3.3. -1.7-1.97 1...7.9-133.13-1.1.9 9. -17.3-11..7. 17. 1.71.. -1.1-1. 1...7.3-1.3 -.3..9.9-9.7.. 71..37..7 1.1-13. 11. 17...77 -.3 -.9.93...1.93. 31. -.9.. -3..73 11. 17...9-1.373-13..7.3.3... -.913-3.7..1-179.9 3.1 1. 1..11. -17.3-139.9..73 3. 9.31.9. -3.7-17.7.. -19.1 117.9 1. 1..9.7-1. -7.7.1. -...9.3-7.91-11.9..11 -.9. 13. 19..19.79 -.39 -.31.97 3.7 -.1.9.9.7-11.33-1.9..9 -.93 -.91 13. 19...7 -.9-1.79..97-9.17-1.19.99. -7.3-1.97..3 -. -.31 1...3. -.39-9.1.9. -. -..9. 1.71 111.39.3.33-1.7-39. 1.... -171.7-3.9.7 1.39 1.39-1.13.. 97.7-1.1.. -. -.3. 1...9-17. -9.7 1.11 1. 119.37-11.... -...7 -.93 -.97. 1...91-139.7 17.3.9 1. -9..3.1.. 7.7.19.77-7.9-7.39...3.9 -.79 173.71.3.7.1 9.7.1.9-3.73 7..1.3-19.3-9....7.93 9.1 17.93.3.31 3. 1..1. -11.1-1.7.13.73-1.7-99.11 17. 3..9.931-1.3.9.1.173.31 9.9.7.1 -. 1..133.93-13. -1.7 17. 3..1.93 -.3...7-1.97.1.1. -.7.77.1.91 -.7-1. 1....9 -.9 9.1.1.3-1..1..7-9.7 1.11.1.933-171.73-1.79 * Pulsed-Power On-Wafer 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) 1-711 E-mail: as-mps.sales@ngc.com Page 7
VD1A APN 1-1 GHz Advance Datasheet Revision: April Die Size and Bond Pad Locations (Not to Scale) X = 3 µm Y = 3 µm DC Bond Pad = 1 x 1. µm RF Bond Pad = 1 x 1. µm Chip Thickness = 11 µm 17 µm 13 µm RFIN VG1A VG1 VD1 3 µm 3 µm RFOUT 1 µm 13 µm 17 µm 3 µm Biasing/De-Biasing Details: APN should be biased the top and bottom of the die. For best performance each side should be biased up separately, but they can be tied together. Listed below are some guidelines for GaN device testing and wire bonding: a. Limit positive gate bias (G-S or G-D) to < 1V b. Know your devices breakdown voltages c. Use a power supply with both voltage and current limit. d. With the power supply off and the voltage and current levels at minimum, attach the ground lead to your test fixture. i. Apply negative gate voltage (- V) to ensure that all devices are off ii. Ramp up drain bias to ~1 V iii. Gradually increase gate bias voltage while monitoring drain current until % of the operating current is achieved iv. Ramp up drain to operating bias v. Gradually increase gate bias voltage while monitoring drain current until the operating current is achieved e. Repeat bias procedure for each amplifier stage f. To safely de-bias GaN devices, start by debiasing output amplifier stages first (if applicable): i. Gradually decrease drain bias to V. ii. Gradually decrease gate bias to V. iii. Turn off supply voltages g. Repeat de-bias procedure for each amplifier stage 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) 1-711 E-mail: as-mps.sales@ngc.com Page
VD1A VD1 APN 1-1 GHz Advance Datasheet Revision: April Suggested Bonding Arrangement [] =.1uF, V (Shunt) [] VG1 VD1 =.1uF, V (Shunt) = 1 pf, V (Shunt) =.1uF, V (Shunt) =.1uF, V (Shunt) = 1 Ohms, 3V (Series) RF Input RFIN VG1A VG1 = 1 pf, V (Shunt) RFOUT RF Output Substrate Substrate Note: APN must be biased from the top and bottom bias pads. VG1a [] VD1a Recommended Assembly Notes 1. Bypass caps should be 1 pf (approximately) ceramic (single-layer) placed no farther than 3 mils from the amplifier.. Best performance obtained from use of <1 mil (long) by 3 by. mil ribbons on input and output. 3. Part must be biased from both sides as indicated.. The.1uF, V capacitors are not needed if the drain supply line is clean. If Drain Pulsing of the device is to be used, do NOT use the.1uf, V Capacitors. Mounting Processes Most Northrop Grumman Aerospace Systems (NGAS) GaN IC chips have a gold backing and can be mounted successfully using either a conductive epoxy or AuSn attachment. NGAS recommends the use of AuSn for high power devices to provide a good thermal path and a good RF path to ground. Maximum recommended temp during die attach is 3 o C for 3 seconds. Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the pick up tool. CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN CHIPS. PLEASE ALSO REFER TO OUR GaN Chip Handling Application Note BEFORE HANDLING, ASSEMBLING OR BIASING THESE MMICS! 1 Northrop Grumman Systems Corporation Phone: (31) 1- Fax: (31) 1-711 E-mail: as-mps.sales@ngc.com Page 9 Approved for Public Release: Northrop Grumman Case -7, /9/