Thyristor High Voltage, Phase Control SCR, 70 A 2 (A) FEATURES High surge capability High voltage input rectification 2 Designed and qualified according to JEDEC -JESD47 3 Super TO-247 (K) (G) 3 Material categorization: for definitions of compliance please see /doc?9992 APPLICATIONS PRIMARY CHARACTERISTICS I T(AV) 70 A V DRM /V RRM 200 V, 600 V V TM.25 V I GT 00 ma T J -40 C to +25 C Package Super TO-247 Circuit configuration Single SCR AC switches High voltage input rectification (soft start) High current crow-bar Other phase-control circuits Designed to be used with Vishay input diodes, switches, and output rectifiers which are available in identical package outlines DESCRIPTION The VS-70TPS..PbF high voltage series of silicon controlled rectifiers are specifically designed for high and medium power switching, and phase control applications. MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I T(AV) Sinusoidal waveform 70 I RMS Lead current limitation 75 A V RRM /V DRM Range 200 to 600 V I TSM 00 A V T 00 A, T J = 25 C.4 V dv/dt 500 V/μs di/dt 50 A/μs T J -40 to +25 C VOLTAGE RATINGS PART NUMBER V RRM /V DRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-70TPS2PbF 200 300 VS-70TPS6PbF 600 700 I RRM /I DRM AT 25 C ma 5 Revision: 0-Aug-208 Document Number: 9439
ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current I T(AV) T C = 82 C, 80 conduction half sine wave 70 Maximum continuous RMS on-state I T(RMS) Lead current limitation 75 current as AC switch A Maximum peak, one-cycle 0 ms sine pulse, rated V RRM applied 930 I TSM non-repetitive surge current 0 ms sine pulse, no voltage reapplied 00 Initial T J = T J Maximum I 2 t for fusing I 2 0 ms sine pulse, rated V RRM applied 4325 t maximum A 2 s 0 ms sine pulse, no voltage reapplied 65 Maximum I 2 t for fusing I 2 t t = 0. ms to 0 ms, no voltage reapplied 6 50 A 2 s Low level value of threshold voltage V T(TO) 0.96 V High level value of threshold voltage V T(TO)2.2 T J = 25 C Low level value of on-state slope resistance r t 4.38 m High level value of on-state slope resistance r t2 3.43 Maximum peak on-state voltage V TM 00 A, T J = 25 C.4 V Maximum rate of rise of turned-on current di/dt T J = 25 C 50 A/μs Maximum holding current I H Anode supply = 6 V, resistive load, initial I T = A, T J = 25 C 200 Maximum latching current I L Anode supply = 6 V, resistive load, T J = 25 C 400 ma T J = 25 C V Maximum reverse and direct leakage current I RRM /I R = rated V RRM /V DRM.0 DRM T J = 25 C (T J = T J max., linear to 80 % 5 Maximum rate of rise of off-state voltage dv/dt T J = 25 C V DRM = R g - k = open) 500 V/μs TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power P GM 0 T = 30 μs Maximum average gate power P G(AV) 2.5 W Maximum peak gate current I GM 2.5 A Maximum peak negative gate voltage - V GM 0 T J = - 40 C.8 Maximum required DC gate voltage to trigger V GT T J = 25 C Anode supply = 6 V resistive load.5 V T J = 25 C. T J = 25 C Anode supply = 6 V resistive load 00 ma T J = - 40 C 50 T J = 25 C 80 Maximum DC gate voltage not to trigger V GD 0.25 V T J = 25 C, V DRM = rated value Maximum DC gate current not to trigger I GD 6 ma Revision: 0-Aug-208 2 Document Number: 9439
THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T J -40 to +25 C Maximum storage temperature range T Stg -40 to +50 Maximum thermal resistance, R thjc DC operation 0.27 junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight Mounting torque Marking device R thja 40 R thcs Mounting surface, smooth and greased 0.2 C/W 6 g 0.2 oz. minimum 6 (5) kgf cm maximum 2 (0) (lbf in) Case style Super TO-247 70TPS2 70TPS6 R thj-hs CONDUCTION PER JUNCTION SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION DEVICE UNITS 80 20 90 60 30 80 20 90 60 30 VS-70TPS..PbF 0.078 0.092 0.7 0.72 0.302 0.053 0.092 0.25 0.80 0.306 C/W Note The table above shows the increment of thermal resistance R thj-hs when devices operate at different conduction angles than DC Maximum Allowable Case Temperature ( C) 30 20 0 00 30 90 RthJC (DC) = 0.27 C/W Conduction Angle 60 90 20 80 80 70 0 0 20 30 40 50 60 70 80 Maximum Allowable Case Temperature ( C) 30 RthJC (DC) = 0.27 C/W 20 DC 0 Conduction Period 00 80 90 80 30 60 70 90 20 60 0 0 20 30 40 50 60 70 80 90 Average On-state Current (A) Average On-state Current (A) Fig. - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 0-Aug-208 3 Document Number: 9439
Maximum Average On-state Power Loss (W) 40 20 00 80 60 40 80 20 90 60 30 RMS Limit Conduction Angle 20 Tj = 25 C 0 0 0 20 30 40 50 60 70 Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics Peak Half Sine Wave Forward Current (A) 000 900 800 700 600 500 At any rated load condition and with rated V RRM applied following surge. Initial T J = 25 C at 60 Hz 0.0083 s at 50 Hz 0.000 s VS-70TPS.. Series 400 0 00 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-state Power Loss (W) 50 20 90 60 30 80 20 90 60 30 RMS Limit Conduction Period Tj = 25 C 0 0 5 30 45 60 75 Average On-state Current (A) DC Peak Half Sine Wave Forward Current (A) 200 00 000 900 800 700 600 500 400 Maximum non-repetitive surge current versus pulse train duration. Initial T J = 25 C No voltage reapplied Rated V RRM reapplied 300 0.0 0. 0 Pulse Train Duration (s) Fig. 4 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current 000 Instantaneous On-state Current (A) Tj = 25 C 00 0 Tj = 25 C 0.5.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Revision: 0-Aug-208 4 Document Number: 9439
Instantaneous Gate Voltage (V) 00 0 Rectangular gate pulse a) Recommended load line for rated di F /dt: 20 V, 30 Ω t r = 0.5 μs, t p > = 6 μs b) Recommended load line for < = 30 % rated di F /dt: 20 V, 65 Ω t r = μs, t p > = 6 μs V GD TJ = 25 C TJ = - 40 C TJ = 25 C (b) (a) (4) (3) () P GM = 00 W, t p = 500 μs (2) P GM = 50 W, t p = ms (3) P GM = 20 W, t p = 25 ms (4) P GM = 0 W, t p = 5 ms I GD Frequency Limited by P G(AV) 0. 0.00 0.0 0. 0 00 000 Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics (2) () Transient Thermal Impedance Z thjc ( C/W) 0. D = 0.50 D = 0.33 D = 0.25 D = 0.7 D = 0.08 Single Pulse 0.0 0.000 0.00 0.0 0. 0 Square Wave Pulse Duration (s) Steady State Value (DC Operation) 70TPS.. Series Fig. 9 - Thermal Impedance Z thjc Characteristics Revision: 0-Aug-208 5 Document Number: 9439
ORDERING INFORMATION TABLE VS-70TPS2PbF, VS-70TPS6PbF High Voltage Series Device code VS- 70 T P S 6 PbF 2 3 4 5 6 7 - product 2 - Current rating (70 = 70 A) 3 - Circuit configuration: T = thyristor 4 - Package: P = super TO-247 5 - Type of silicon: S = standard recovery rectifier 6 - Voltage code x 00 = V RRM 7 - PbF = lead (Pb)-free 2 = 200 V 6 = 600 V ORDERING INFORMATION (example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-70TPS2PbF 25 500 Antistatic plastic tube VS-70TPS6PbF 25 500 Antistatic plastic tube Dimensions Part marking information LINKS TO RELATED DOCUMENTS /doc?95073 /doc?95070 Revision: 0-Aug-208 6 Document Number: 9439
Outline Dimensions Super TO-247 DIMENSIONS in millimeters (inches) 2 x R 6.0 (0.632) 5.0 (0.595) A 5.50 (0.26) 4.50 (0.78) 0.3 (0.005) 2.5 (0.084).45 (0.058) 20.80 (0.88) 9.80 (0.780) 4 C 2 3 4.25 (0.67) 3.85 (0.52) B 4.80 (0.582) 3.80 (0.544) 5.45 (0.25) 2 x 3 x.30 (0.05).60 (0.063) 0.25 (0.00) M B A M.20 (0.047) 3 x 0.90 (0.035) 2.35 (0.092).65 (0.065) 0.25 (0.00) M B A M 3.90 (0.547) 3.30 (0.524) Ø.60 (0.063) MAX..30 (0.05) 0.70 (0.028) 6.0 (0.633) 5.50 (0.6) 4 Section E - E Lead assignments E E MOSFET IGBT - Gate 2 - Drain 3 - Source 4 - Drain - Gate 2 - Collector 3 - Emitter 4 - Collector Notes () Dimension and tolerancing per ASME Y4.5M-994 (2) Controlling dimension: millimeter (3) Outline conforms to JEDEC outline TO-274AA Revision: 30-Mar-5 Document Number: 95073
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