TL TLA - TLB LOW POWER J-FET SINGLE OPERATIONAL AMPLIFIER. VERY LOW POWER CONSUMPTION : µa WIDE COMMON-MODE (UP TO + VCC ) AND DIFFERENTIAL VOLTAGE RANGES. LOW INPUT BIAS AND OFFSET CURRENTS OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J-FET INPUT STAGE. INTERNAL FREQUENCY COMPENSATION LATCH UP FREE OPERATION HIGH SLEW RATE :.V/µs N DIP8 (Plastic Package) D SO8 (Plastic Micropackage) DESCRIPTION The TL, TLA and TLB are high speed J-FET input single operational amplifier family. Each of these J-FET input operational amplifiers incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offsetcurrents, andlow offset voltage temperature coefficient. ORDER CODES Part Number Temperature Range Package N D TLM/AM/BM - o C, +2 o C TLI/AI/BI - o C, + o C l TLC/AC/BC o C, +7 o C l Example : TLIN PIN CONNECTIONS (top view) 2 8 7 - Offset Null 2 - Inverting input - Non-inverting input - - - Offset Null 2 - Output 7- + 8 - N.C. October 997 /9
TL - TLA - TLB SCHEMATIC DIAGRAM 2 Ω Inverting Non-inverting Input Input Ω Output k Ω 27 Ω.2k Ω.2k Ω Ω Offset Null Offset Null 2 INPUT OFFSET VOLTAGE NULL CIRCUIT TL N N2 k Ω MAXIMUM RATINGS Symbol Parameter TLM,AM,BM TLI,AI,BI TLC,AC,BC Unit Supply Voltage - (note ) ±8 ±8 ±8 V Vi Input Voltage - (note ) ± ± ± V V id Differential Input Voltage - (note 2) ± ± ± V P tot Power Dissipation 8 8 8 mw Output Short-Circuit Duration (Note ) Infinite Infinite Infinite T oper Operating Free-Air Temperature Range - to +2 - to + to +7 o C T stg Storage Temperature Range - to + - to + - to + o C Notes :. All voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the zero reference level is the midpoint between + and -. 2. Differential voltages are thenon-inverting input terminal with respect to the inverting input terminal.. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or volts, whichever is less.. The output may be shorted to ground or to either supply. Temperature and/or supply voltages must be limited to ensure that the dissipation rating is not exceeded. 2/9
TL - TLA - TLB ELECTRICAL CHARACTERISTICS VCC = ± V, Tamb =2 o C (unless otherwise specified) Symbol V io DV io Parameter Input Offset Voltage (R s =Ω) Tamb =2 o C TLM TLI TLC Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 9 9 Temperature Coefficient of Input Offset Voltage (R s =Ω) I io Input Offset Current * Tamb =2 o C T min. T amb T max. I ib Input Bias Current * T amb =2 o C Input Common Mode Voltage Range Output Voltage Swing (RL = kω) Tamb =2 o C V icm VOPP Avd GBP Large Signal Voltage Gain (RL = kω, Vo = ±V) Tamb =2 o C ±. + -2 27 ±. + -2 27 ± + -2 Gain Bandwidth Product (Tamb =2 o C, RL = kω CL = pf) R i Input Resistance 2 2 2 Ω CMR Common Mode Rejection Ratio db (Rs = Ω) 8 8 8 8 7 7 SVR Supply Voltage Rejection Ratio db (R s =Ω) 8 9 8 9 7 9 Icc Supply Current µa (Tamb =2 o C, no load, no signal) 2 2 2 P D Total Power Consumption mw (T amb =2 o C, no load, no signal) 7. 7. 7. * The input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive. Pulse techniques must be used that will maintain the junction temperature as close to the ambient temperature as possible. ELECTRICAL CHARACTERISTICS (continued) = ± V, T amb =2 o C Symbol Parameter TLC,I,M Min. Typ. Max. Unit SR Slew Rate (V i = V, R L = kω, C L = pf, A V = ).. V/µs t r Rise Time (V i = mv, R L = kω, C L = pf, A V = ).2 µs KOV Overshoot Factor (Vi = mv, RL = kω, CL= pf, AV =) (see figure ) % e n Equivalent Input Noise Voltage (Rs = Ω, f = KHz) 2 27 Unit mv µv/ o C pa na pa na V V V/mV MHz nv Hz /9
TL - TLA - TLB ELECTRICAL CHARACTERISTICS (continued) VCC = ± V, Tamb =2 o C (unless otherwise specified) Symbol V io DV io Parameter Input Offset Voltage (R s =Ω) Tamb =2 o C TLAC,AI,AM TLBC,BI,BM Min. Typ. Max. Min. Typ. Max. 7. Temperature Coefficient of Input Offset Voltage (R s =Ω) I io Input Offset Current * Tamb =2 o C T min. T amb T max. I ib Input Bias Current * T amb =2 o C V icm Input Common Mode Voltage Range ±. + -2 VOPP Avd Output Voltage Swing (RL = kω) Tamb =2 o C Large Signal Voltage Gain (RL = kω, Vo = ±V) Tamb =2 o C 7 27 ±. + -2 2 7 GBP Gain Bandwidth Product MHz (Tamb =2 o C, RL = kω, CL= pf) Ri Input Resistance 2 2 Ω CMR Common Mode Rejection Ratio db (R s =Ω,T amb =2 o C) 8 8 8 8 SVR Supply Voltage Rejection Ratio db (Rs =Ω,Tamb =2 o C) 8 9 8 9 I cc Supply Current, no Load µa (T amb =2 o C, no load, no signal) 2 2 P D Total Power Consumption mw (T amb =2 o C, no load, no signal) 7. 7. SR Slew Rate (V i = V, R L = kω, C L = pf, A V = ).... V/µs tr Rise Time (Vi = mv, RL = kω, CL= pf, AV = ).2.2 µs KOV Overshoot Factor (Vi = mv, RL = kω, CL = pf, A V = ) - (see figure ) % e n Equivalent Input Noise Voltage (Rs = Ω, f = KHz) 2 2 * The input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive. Pulse techniques must be used that will maintain the junction temperature as close to the ambient temperature as possible. 27 Unit mv µv/ o C pa na pa na V V V/mV nv Hz /9
TL - TLA - TLB VOLTAGE VERSUS SUPPLY VOLTAGE VOLTAGE VERSUS FREE AIR TEMP. VOLTAGE (V) 2 R L =kω T amb = +2 C See figure 2 2 8 2 SUPPLY VOLTAGE (V) MAXIMUM PEAK-TO-PEAKOUTPUT VOLTAGE (V) 2 = V R L = k Ω See Figure 2-7 - -2 2 7-2 VOLTAGE VERSUS LOAD RESISTANCE VOLTAGE VERSUS FREQUENCY VOLTAGE (V) 2 V = V CC T amb =+2 C SeeFigure2 7 k 2k k 7k k VOLTAGE (V) 2 = V = 2V = V = 2V R = k Ω L T amb = +2 C See Figure 2 k K K M M LOAD RESISTANCE (k Ω) FREQUENCY (Hz) DIFFERENTIAL VOLTAGE AMPLIFICATION VERSUS FREE AIR TEMPERATURE LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT VERSUS FREQUENCY DIFFERENTIAL VOLTAGE AMPLIFICATION (V/mV) 7 2 V = V CC R L=kΩ -7 - -2 2 7 2 DIFFERENTIAL VOLTAGE AMPLIFICATION (V/V) 2 PHASE SHIFT (right scale) = V to V R L =2kΩ T amb =+2 C DIFFERENTIAL VOLTAGE AMPLIFICATION (left scale) 8 k k k M M FREQUENCY (Hz) 9 /9
TL - TLA - TLB SUPPLY CURRENT PER AMPLIFIER VERSUS SUPPLY VOLTAGE SUPPLY CURRENT PER AMPLIFIER VERSUS FREE AIR TEMPERATURE 2 2 SUPPLY CURRENT (µa) T amb = +2 C No signal No load 2 8 2 SUPPLY VOLTAGE ( V) SUPPLY CURRENT (µa) = V No signal No load -7 - -2 2 7 2 TOTAL POWER DISSIPATED VERSUS FREE AIR TEMPERATURE COMMON MODE REJECTION RATIO VERSUS FREE AIR TEMPERATURE 87 TOTAL POWER DISSIPATED (mw) 2-7 = V No signal No load - -2 2 7 2 COMMONMODEREJECTION RATIO (db) 8 8 8 8 82 8-7 = V R L =kω - -2 2 7 2 NORMALIZED UNITY GAIN BANDWIDTH SLEW RATE, AND PHASE SHIFT VERSUS TEMPERATURE INPUT BIAS CURRENT VERSUS FREE AIR TEMPERATURE NORMALIZED UNITY-GAINBANDWIDTH AND SLEW RATE..2. UNITY-GAIN-BANDWIDTH (left scale) PHASE SHIFT (right scale) SLEW RATE (left scale)..2..9 = V.99.8 R L = kω f = Bfor phase shift.98.7.97-7 - -2 2 7 2 NORMALIZED PHASESHIFT INPUT BIAS CURRENT (na) = V.. - -2 2 7 2 /9
TL - TLA - TLB INPUT AND OUTPUT VOLTAGES (V) VOLTAGE FOLLOWER LARGE SIGNAL PULSE RESPONSE 2-2 - - INPUT = V R = L kω C L = pf T amb =+2 C OUTPUT 2 8 TIME (µs) OUTPUT VOLTAGE (mv) 28 2 2 8 - OUTPUT VOLTAGE VERSUS ELAPSED TIME OVERSHOOT 9% V = CC V R % L = k Ω t r T amb = +2 C.2...8 2 TIME ( µs) EQUIVALENT INPUT NOISE VOLTAGE VERSUS FREQUENCY EQUIVALENT INPUT NOISE VOLTAGE (nv/vhz) 9 8 7 = V R S =Ω T amb =+2 C k k k k k FREQUENCY (Hz) PARAMETER MEASUREMENT INFORMATION Figure : Voltage follower Figure 2 : Gain-of- inverting amplifier k Ω - TL - e o e I k Ω - TL e o e I C L = pf R = k Ω L R L C L = pf -.EPS -2.EPS 7/9
TL - TLA - TLB PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP PM-DIP8.EPS Dimensions Millimeters Inches Min. Typ. Max. Min. Typ. Max. A.2. a.. B.... b....22 b...8.2 D.92. E 7.9 9.7..8 e 2.. e 7.2. e 7.2. F. 2 i.8. L.8.8.2. Z.2. DIP8.TBL 8/9
TL - TLA - TLB PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO) PM-SO8.EPS Dimensions Millimeters Inches Min. Typ. Max. Min. Typ. Max. A.7.9 a..2.. a2.. a..8.2. b..8..9 b.9.2.7. C.2... c o (typ.) D.8..89.97 E.8.2.228.2 e.27. e.8. F.8...7 L..27.. M..2 S 8 o (max.) SO8.TBL Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 997 SGS-THOMSON Microelectronics Printed in Italy AllRights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. ORDER CODE : 9/9