TL6 TL6A TL6B LOW POWER JFET QUAD OPERATIONAL AMPLIFIERS VERY LOW POWER CONSUMPTION : µa WIDE COMMONMODE (UP TO VCC + ) AND DIFFERENTIAL VOLTAGE RANGES LOW INPUT BIAS AND OFFSET CURRENTS OUTPUT SHORTCIRCUIT PROTECTION HIGH INPUT IMPEDANCE JFET INPUT STAGE INTERNAL FREQUENCY COMPENSATION LATCH UP FREE OPERATION HIGH SLEW RATE : 3.V/µs N DIP (Plastic Package) D SO (Plastic Micropackage) DESCRIPTION The TL6, TL6A and TL6B are high speed JFET input quad operational amplifiers. Each of these JFET input operational amplifiers incorporates well matched, high voltage JFET and bipolar transistors in a monolithic integrated circuit. The device features high slew rate, low input bias and offsetcurrents, andlow offset voltage temperature coefficient. ORDER CODES Part Number Temperature Range Package N D TL6M/AM/BM o C, +2 o C TL6I/AI/BI o C, + o C TL6C/AC/BC o C, +7 o C Example : TL6IN PIN CONNECTIONS (top view) Output Output Inverting Input 2 3 Inverting Input Noninverting Input 3 + + 2 Noninverting Input VCC + VCC Noninverting Input 2 Inverting Input 2 6 + + 9 Noninverting Input 3 Inverting Input 3 Output 2 7 8 Output 3 October 997 /
TL6 TL6A TL6B SCHEMATIC DIAGRAM 2Ω Inverting Input Noninverting Input 6Ω Output / TL6 k Ω 27Ω 3.2k Ω.2k Ω Ω MAXIMUM RATINGS Symbol Parameter TL6M,AM,BM TL6I,AI,BI TL6C,AC,BC Unit Supply Voltage (note ) ±8 ±8 ±8 V Vi Input Voltage (note 3) ± ± ± V Vid Differential Input Voltage (note 2) ±3 ±3 ±3 V Ptot Power Dissipation 68 68 68 mw Output ShortCircuit Duration (Note ) Infinite Infinite Infinite T oper Operating FreeAir Temperature to +2 to + to +7 o C Range T stg Storage Temperature Range 6 to + 6 to + 6 to + o C Notes :. All voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the zero reference level is the midpoint between VCC + and VCC. 2. Differential voltages are the noninverting input terminal with respect to the inverting input terminal. 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or volts, whichever is less.. The output may be shorted to ground or to either supply. Temperature and/or supply voltages must be limited to ensure that the dissipation rating is not exceeded. 2/
TL6 TL6A TL6B ELECTRICAL CHARACTERISTICS VCC = ± V, Tamb =2 o C (unless otherwise specified) Symbol V io DVio Parameter Input Offset Voltage (R s =Ω) Tamb =2 o C TL6M TL6I TL6C Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 3 6 3 6 9 Temperature Coefficient of Input Offset Voltage (R s =Ω) I io Input Offset Current * T amb =2 o C T min. T amb T max. I ib Input Bias Current * T amb =2 o C Vicm VOPP Avd GBP Input Common Mode Voltage Range ±. + 2 Output Voltage Swing (RL = kω) Tamb =2 o C Large Signal Voltage Gain (R L = kω, V o =±V) Tamb =2 o C T min. T amb T max. 3 27 6 ±. + 2 3 27 6 3 3 ± + 2 Gain Bandwidth Product (Tamb =2 o C, RL = kω CL = pf) 3 3 Ri Input Resistance 2 2 2 Ω CMR Common Mode Rejection Ratio (R s = Ω) 8 86 8 86 7 76 SVR Supply Voltage Rejection Ratio (Rs = Ω) 8 9 8 9 7 9 I cc Supply Current (Per Amplifier) µa (T amb =2 o C, no load, no signal) 2 2 2 Channel Separation (Av =, Tamb =2 o C) PD Total Power Consumption mw (Tamb =2 o C, no load, no signal) 6 7. 6 7. 6 7. VO/VO2 * The input bias currents of a FETinput operational amplifier are normal junction reverse currents, which are temperature sensitive. Pulse techniques must be used that will maintain the junction temperature as close to the ambient temperature as possible. ELECTRICAL CHARACTERISTICS (continued) VCC = ± V, Tamb =2 o C Symbol Parameter TL6C,I,M Min. Typ. Max. Unit SR Slew Rate (Vi = V, RL = kω, CL= pf, AV = ). 3. V/µs tr Rise Time (Vi = mv, RL = kω, CL = pf, AV = ) (see Figure ).2 µs KOV Overshoot Factor (Vi = mv, RL = kω, CL= pf, AV =) % (see figure ) en Equivalent Input Noise Voltage (R s = Ω, f = KHz) 2 27 6 Unit mv µv/ o C pa na pa na V V V/mV MHz nv Hz 3/
TL6 TL6A TL6B ELECTRICAL CHARACTERISTICS (continued) VCC = ± V, Tamb =2 o C (unless otherwise specified) Symbol V io DVio Parameter Input Offset Voltage (R s =Ω) Tamb =2 o C TL6AC,AI,AM TL6BC,BI,BM Min. Typ. Max. Min. Typ. Max. 3 6 7. Temperature Coefficient of Input Offset Voltage (R s =Ω) I io Input Offset Current * T amb =2 o C T min. T amb T max. 3 I ib Input Bias Current * T amb =2 o C Vicm Input Common Mode Voltage Range ±. + 2 VOPP Avd Output Voltage Swing (RL = kω) Tamb =2 o C Large Signal Voltage Gain (RL = kω, Vo = ±V) T amb =2 o C T min. T amb T max. 3 7 27 6 ±. + 2 2 3 3 3 7 GBP Gain Bandwidth Product MHz (T amb =2 o C, R L = kω, C L = pf) R i Input Resistance 2 2 Ω CMR Common Mode Rejection Ratio (R s =Ω) 8 86 8 86 SVR Supply Voltage Rejection Ratio (Rs = Ω) 8 9 8 9 I cc Supply Current (Per Amplifier) µa (T amb =2 o C, no load, no signal) 2 2 V O /V O2 Channel Separation (A v =, T amb =2 o C) P D Total Power Consumption (Each Amplifier) mw (Tamb =2 o C, no load, no signal) 6 7. 6 7. SR Slew Rate (Vi = V, RL = kω, CL = pf, AV = ). 3.. 3. V/µs tr Rise Time (Vi = mv, RL = kω, CL = pf, AV = ).2.2 µs KOV Overshoot Factor (Vi = mv, RL = kω, CL = pf, % A V = ) (see figure ) e n Equivalent Input Noise Voltage (Rs = Ω, f = KHz) 2 2 * The input bias currents of a FETinput operational amplifier are normal junction reverse currents, which are temperature sensitive. Pulse techniques must be used that will maintain the junction temperature as close to the ambient temperature as possible. 27 6 Unit mv µv/ o C pa na pa na V V V/mV nv Hz /
TL6 TL6A TL6B MAXIMUM PEAKTOPEAK OUTPUT VOLTAGE VERSUS SUPPLY VOLTAGE MAXIMUM PEAKTOPEAK OUTPUT VOLTAGE VERSUS FREE AIR TEMP. MAXIMUM PEAKTOPEAKOUTPUT VOLTAGE (V) 3 R L = kω 2 T am b = +2 C See figure 2 2 6 8 2 6 SUPPLY VOLTAGE (V) MAXIMUM PEAKTOPEAKOUTPUT VOLTAGE (V) 3 2 = V R L = k Ω See Figure 2 7 2 2 7 2 MAXIMUM PEAKTOPEAK OUTPUT VOLTAGE VERSUS LOAD RESISTANCE MAXIMUM PEAKTOPEAK OUTPUT VOLTAGE VERSUS FREQUENCY MAXIMUM PEAKTOPEAK OUTPUT VOLTAGE (V) 3 2 = V T amb = +2 C See Figure 2 7 k 2k k 7k k LOAD RESISTANCE (kω) MAXIMUM PEAKTOPEAK OUTPUT VOLTAGE (V) 3 2 = V = 2V = V = 2V = kω T amb = +2 C See Figure 2 k K K M M FREQUENCY (Hz) R L DIFFERENTIAL VOLTAGE AMPLIFICATION VERSUS FREE AIR TEMPERATURE LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT VERSUS FREQUENCY DIFFERENTIAL VOLTAGE AMPLIFICATION (V/mV) 7 2 V = V CC R = kω L 7 2 2 7 2 DIFFERENTIAL VOLTAGE AMPLIFICATION (V/V) 6 3 2 PHASE SHIFT (right scale) = V to V R L =2kΩ T amb =+2 C DIFFERENTIAL VOLTAGE AMPLIFICATION (left scale) 8 k k k M M FREQUENCY (Hz) 9 3 /
TL6 TL6A TL6B SUPPLY CURRENT PER AMPLIFIER VERSUS SUPPLY VOLTAGE SUPPLY CURRENT PER AMPLIFIER VERSUS FREE AIR TEMPERATURE 2 2 SUPPLY CURRENT (µa) T amb =+2 C No signal No load 2 6 8 2 6 SUPPLY VOLTAGE ( V) SUPPLY CURRENT (µa) = V No signal No load 7 2 2 7 2 TOTAL POWER DISSIPATED VERSUS FREE AIR TEMPERATURE COMMON MODE REJECTION RATIO VERSUS FREE AIR TEMPERATURE 3 87 TOTAL POWER DISSIPATED (mw) 2 7 = V No signal No load 2 2 7 2 COMMONMODEREJECTION RATIO () 86 8 8 83 82 8 7 = V R L =kω 2 2 7 2 NORMALIZED UNITY GAIN BANDWIDTH SLEW RATE, AND PHASE SHIFT VERSUS TEMPERATURE INPUT BIAS CURRENT VERSUS FREE AIR TEMPERATURE NORMALIZED UNITYGAINBANDWIDTH AND SLEW RATE.3.2. UNITYGAINBANDWIDTH (left scale) PHASE SHIFT (right scale) SLEW RATE (left scale).3.2..9 = V.99.8 R L = kω f = Bfor phase shift.98.7.97 7 2 2 7 2 NORMALIZED PHASESHIFT INPUT BIAS CURRENT (na) = V.. 2 2 7 2 6/
TL6 TL6A TL6B INPUT AND OUTPUT VOLTAGES (V) VOLTAGE FOLLOWER LARGE SIGNAL RESPONSE 6 2 2 6 INPUT = V R = L kω C L = pf T amb =+2 C OUTPUT 2 6 8 TIME (µs) OUTPUT VOLTAGE (mv) 28 2 6 2 8 OUTPUT VOLTAGE VERSUS ELAPSED TIME OVERSHOOT EQUIVALENT INPUT NOISE VOLTAGE VERSUS FREQUENCY 9% V = CC V R % L = k Ω t r T amb = +2 C.2..6.8 2 TIME ( µs) EQUIVALENT INPUT NOISE VOLTAGE (nv/vhz) 9 8 7 6 3 = V R S =Ω T amb =+2 C k k k k k FREQUENCY (Hz) 7/
TL6 TL6A TL6B PARAMETER MEASUREMENT INFORMATION Figure : Voltage follower Figure 2 : Gainof inverting amplifier k Ω k Ω e I k Ω e I k Ω / TL6 e o / TL6 e o R L C L = pf R L C L = pf TYPICAL APPLICATION AUDIO DISTRIBUTION AMPLIFIER f O = khz M Ω / TL6 Output A Input µf / TL6 / TL6 Output B k Ω k Ω OO µf k Ω k Ω + / TL6 Output C 8/
TL6 TL6A TL6B PACKAGE MECHANICAL PINS PLASTIC DIP PMDIP.EPS Dimensions Millimeters Inches Min. Typ. Max. Min. Typ. Max. a.. B.39.6..6 b.. b.2. D.787 E 8..33 e 2.. e3.2.6 F 7..28 i.. L 3.3.3 Z.27 2... DIP.TBL 9/
TL6 TL6A TL6B PACKAGE MECHANICAL PINS PLASTIC MICROPACKAGE (SO) Dimensions Millimeters Inches Min. Typ. Max. Min. Typ. Max. A.7.69 a..2..8 a2.6.63 b.3.6..8 b.9.2.7. C.. c o (typ.) D 8. 8.7.336.33 E.8 6.2.228.2 e.27. e3 7.62.3 F 3.8...7 G.6.3.8.8 L..27.. M.68.27 S 8 o (max.) Information furnished is believed to be accurate and reliable. However, SGSTHOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGSTHOMSON Microelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGSTHOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGSTHOMSON Microelectronics. 997 SGSTHOMSON Microelectronics Printed in Italy AllRights Reserved SGSTHOMSON Microelectronics GROUP OF COMPANIES Australia Brazil Canada China France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco The Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. ORDER CODE : SO.TBL PMSO.EPS /