RF1. Parameter Min Typ Max Units Frequency Range

Similar documents
Parameter Min Typ Max Units Frequency Range

Parameter Min Typ Max Units Frequency Range

DC-20 GHz SP4T Non-reflective Switch

CMD282. DC-40 GHz 2-bit Digital Attenuator. Features. Functional Block Diagram. Description

CMD GHz Low Noise Amplifier

CMD GHz Distributed Driver Amplifier. Features. Functional Block Diagram. Description

CMD GHz Low Noise Amplifier. Functional Block Diagram. Features. Description

CMD GHz Distributed Low Noise Amplifier RFIN

2 3 ACG1 ACG2 RFIN. Parameter Min Typ Max Units Frequency Range

CMD GHz Active Frequency Doubler. Features. Functional Block Diagram. Description

CMD217. Let Performance Drive GHz GaN Power Amplifier

CMD GHz GaN Low Noise Amplifier. Features. Functional Block Diagram. Description

CMD GHz Low Noise Amplifier. Functional Block Diagram. Features. Description

3 4 ACG1 ACG2. Vgg2 2 RFIN. Parameter Min Typ Max Units Frequency Range

CMD GHz Low Noise Amplifier. Features. Functional Block Diagram. Description

CMD GHz Driver Amplifier. Features. Functional Block Diagram. Description

DC-20 GHz Distributed Power Amplifier

2 3 ACG1 ACG2 RFIN. Parameter Min Typ Max Units Frequency Range

CMD GHz GaN Low Noise Amplifier. Features. Functional Block Diagram. Description

3 4 ACG1 ACG2. 2 Vgg2 RFIN. Parameter Min Typ Max Units. Frequency Range DC - 24 GHz. Gain 18 db. Noise Figure 2.5 db. Output P1dB 25 dbm

Parameter Min Typ Max Units Frequency Range

Features. = +25 C, With 0/-5V Control, 50 Ohm System

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, With 0/-5V Control, 50 Ohm System

Features OBSOLETE. = +25 C, With 0/-5V Control, 50 Ohm System. DC - 10 GHz DC - 6 GHz DC - 15 GHz. DC - 6 GHz DC - 15 GHz

0.1 GHz to 18 GHz, GaAs SP4T Switch HMC641A

CMD175P GHz 5-Bit Digital Phase Shifter. Features. Functional Block Diagram. Description

1-24 GHz Distributed Driver Amplifier

Features. Parameter Min. Typ. Max. Units. Frequency Range 8 12 GHz Insertion Loss* 5 7 db. Input Return Loss* 10 db

ENGDA Wideband Distributed Amplifier, DIE, 0.8 to 20 GHz ENGDA Features. Typical Applications. Description. Functional Block Diagram

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

2-20 GHz Driver Amplifier

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

Features. Parameter Frequency Min. Typ. Max. Units GHz GHz GHz GHz GHz GHz

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units. DC - 20 GHz 2

8 11 GHz 1 Watt Power Amplifier

CMD170P GHz Driver Amplifier. Features. Functional Block Diagram. Description

v02.06 Insertion Loss INSERTION LOSS () C +85 C -40 C Isolation ISOLATION () Return Loss RETURN LOSS ()

DC-10GHz SPDT Reflective Switch

CMD158C GHz Driver Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 5.0 V, T A = 25 o C, F = 11 GHz

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units GHz GHz

GHz Broadband Low Noise Amplifier

9-10 GHz LOW NOISE AMPLIFIER

Features. = +25 C, With 0/-5V Control, 50 Ohm system

CMD119P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.6 V, T A = 25 o C, F=8GHz

Features OBSOLETE. = +25 C, 5 ma Bias Current

CMD157P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.

CMD132P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.

Features. DC - 18 GHz. Switching Transients DC - 18 GHz 12 mvpp

8-18 GHz Wideband Low Noise Amplifier

CMD187C GHz Driver Amplifier. Features. Functional Block Diagram. Description

Features. Parameter Min. Typ. Max. Units. Frequency Range 3 6 GHz Insertion Loss* db. Input Return Loss* 12 db

CMD167P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.0 V, T A = 25 o C, F=12 GHz

Features. = +25 C, Vdd = 5V, Idd = 85mA*

Features. = +25 C, Vdd1, Vdd2 = +5V

CMD158P GHz Driver Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 5.

TEL: FAX: v1.77 HMC64 Insertion Loss, Major States Only Normalized Loss, Major States Only 4 INSERTION LOSS (db)

CMD233C GHz Distributed Low Noise Amplifier. Features. Functional Block Diagram. Description

6-18 GHz Low Phase Noise Amplifier

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

Features. Parameter Frequency Min. Typ. Max. Units. Return Loss Off State DC - 20 GHz 13 db

5 6.4 GHz 2 Watt Power Amplifier

Features. DC - 2 GHz GHz Supply Current (Idd) 400 ma

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

Features. Gain: 15.5 db. = +25 C, Vdd = 5V

Features. = +25 C, Vdd 1, 2, 3 = +3V

HMC465 AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP. GaAs phemt MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz. Electrical Specifications, T A.

Features. Parameter Frequency (GHz) Min. Typ. Max. Units. Attenuation Range GHz 31 db. All States db db. 0.

Features. = +25 C, Vdd = 5V

HMC349LP4C / 349LP4CE

Features OUT E S T CODE. = +25 C, Vdd= 8V, Idd= 60 ma*

Features. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz. Attenuation Range GHz 31 db

Features. = +25 C, Vdd 1, 2, 3 = +3V

CMD283C GHz Ultra Low Noise Amplifier. Features. Functional Block Diagram. Description

Features. = +25 C, Vdd 1, 2, 3 = +3V

HMC-APH596 LINEAR & POWER AMPLIFIERS - CHIP. GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, GHz. Typical Applications. Features

Features dbm

Features. = +25 C, Vdd 1, 2, 3 = +3V

CMD158P GHz Driver Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 5.

Features +3V +5V GHz

Features. = +25 C, Vdd = 5V, Idd = 200 ma*

Features. = +25 C, With Vdd = +5V & Vctl = 0/+5V (Unless Otherwise Noted)

18-40 GHz Low Noise Amplifier

Features. = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 ma [1]

4-8 GHz Low Noise Amplifier

Features. = +25 C, Vdd 1, 2, 3, 4 = +3V

Data Sheet. AMMC GHz Amplifier. Description. Features. Applications

5 6 GHz 10 Watt Power Amplifier

Features OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma

HMC985A. attenuators - analog - Chip. GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, GHz. Features. Typical Applications. General Description

Customised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel

GHz Voltage Variable Attenuator (Absorptive)

Features. Output Third Order Intercept (IP3) [2] dbm Power Added Efficiency %

Features. = +25 C, 50 Ohm System

Features OBSOLETE. Isolation DC GHz db

HMC-AUH232 MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP. GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz. Typical Applications.

Features. = 25 C, IF = 3 GHz, LO = +16 dbm

S Band 7 Bit Digital Attenuator

Features. = +25 C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1]

Transcription:

Features Functional Block Diagram Low loss broadband performance High isolation Fast switching speed Reflective design Small die size Description RFC 1 The CMD230 is a general purpose broadband high isolation reflective MMIC SPDT switch in die form. Covering DC to 26 GHz, the CMD230 features a low insertion loss of 1.4 db and high isolation of 40 db at 13 GHz. The CMD230 operates using complementary control voltage logic lines of 0/-5 V and requires no bias supply. RF1 5 A 4 B 3 2 RF2 Electrical Performance - V ctl = 0/-5 V, T A = 25 o C, F = 13 GHz Parameter Min Typ Max Units Frequency Range DC - 26 GHz Insertion Loss 1.4 db Isolation 40 db Return Loss - RFC 16 db Return Loss RF1, RF2 - On State 27 db Input P0.1dB 21 dbm Switching Speed 3.4 ns

Specifications Absolute Maximum Ratings Parameter RF Input Power Rating +30 dbm Control Voltage Range (A,B) +0.5V to -7.5V Channel Temperature, Tch 150 C Operating Temperature -55 to 85 C Storage Temperature -55 to 150 C Operation of this device outside the maximum ratings may cause permanent damage. Control Voltages State Bias Condition Low 0 to -0.5V @ 0.01 ua Typ High -2V @ 0.1 ua Typ to -7V @ 20 ua Typ Truth Table Control Input Signal Path State A B RFC to RF1 RFC to RF2 High Low On Off Low High Off On Electrical Specifications - V ctl = 0/-5 V, T A = 25 o C Parameter Min Typ Max Min Typ Max Min Typ Max Units Frequency Range DC - 8 DC - 18 DC - 26 GHz Insertion Loss 1.1 1.5 1.7 2.1 2.4 2.8 db Isolation 39 44 32 37 27 32 db Return Loss - RFC 18 13 11 db Return Loss - RF1, 2 - On State 21 17 12 db Input P0.1dB 23 21 21 dbm Input IP3 38 37 35 dbm Switching Speed 3.4 3.4 3.4 ns

Typical Performance Insertion Loss vs. Temperature 0-0.5-1 +25C +85C -55C -1.5 Insertion Loss/dB -2-2.5-3 -3.5-4 -4.5-5 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Return Loss 0-5 RFC RF1, RF2 On -10 Return Loss/dB -15-20 -25-30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30

Typical Performance Isolation Between Ports RFC and RF1/RF2 0-10 -20 Isolation/dB -30-40 -50-60 -70 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Input P0.1dB Compression Point and Input Third Order Intercept Point 50 45 40 P0.1dB IP3 35 Response/dBm 30 25 20 15 10 5 0 2 4 6 8 10 12 14 16 18 20 22 24 26

Typical Performance Input Third Order Intercept Point 50 45 +25C +85C -40C 40 Input IP3/dBm 35 30 25 20 2 4 6 8 10 12 14 16 18

Mechanical Information Die Outline (all dimensions in microns) 670.00 335.00 1 590.00 495.00 5 4 3 2 95.00 120.00 260.00 410.00 550.00 Notes: 1. No connection required for unlabeled pads 2. Backside is RF and DC ground 3. Backside and bond pad metal: Gold 4. Die is 100 microns thick 5. DC bond pads are 100 microns square

Pad Description Pad Diagram 1 5 4 3 2 Functional Description Pin Function Description Schematic 1, 2, 5 RFC, RF2, RF1 These pins are DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V 4 CTRLA See truth table and control voltage table A, B 3 CTRLB See truth table and control voltage table Backside Ground Connect to RF / DC ground GND

Applications Information Suggested Driver Circuit GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.

Applications Information Assembly Guidelines The backside of the CMD230 is RF ground. Die attach should be accomplished with electrically and thermally conductive epoxy only. Eutectic attach is not recommended. Standard assembly procedures should be followed for high frequency devices. The top surface of the semiconductor should be made planar to the adjacent RF transmission lines. RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use of a 0.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized. The RF inputs and outputs require a double bond wire as shown. The semiconductor is 100 um thick and should be handled by the sides of the die or with a custom collet. Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle with care. Assembly Diagram RFC RF1 RF2 To Vctl