Dual High Voltage Trench MOS Barrier Schottky Rectifier

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Transcription:

MBRF9CT-M3, MBRFCT-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier TMBS ITO-22AB 2 3 PIN PIN 2 PIN 3 PRIMARY CHARACTERISTICS I F(AV) 2 x 5. A V RRM 9 V, V I FSM 2 A V F.75 V T J max. 5 C Package ITO-22AB Circuit configuration Common cathode FEATURES Trench MOS Schottky technology Lower power losses, high efficiency Low forward voltage drop High forward surge capability High frequency operation Solder dip 275 C max. s, per JESD 22-B6 Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MECHANICAL DATA Case: ITO-22AB Molding compound meets UL 94 V- flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-2 and JESD 22-B2 M3 suffix meets JESD 2 class A whisker test Polarity: As marked Mounting Torque: in-lbs max. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) PARAMETER SYMBOL MBRF9CT MBRFCT UNIT Max. repetitive peak reverse voltage V RRM 9 V Working peak reverse voltage V RWM 9 V Max. DC blocking voltage V DC 9 V Max. average forward rectified current at T C = 5 C total device I F(AV) per diode 5. A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode I FSM 2 A Non-repetitive avalanche energy at T J = 25 C, L = 6 mh per diode E AS 6 mj Peak repetitive reverse current at t p = 2 μs, khz, T J = 38 C ± 2 C per diode I RRM.5 A Voltage rate of change (rated V R ) dv/dt V/μs Operating junction and storage temperature range T J, T STG -65 to +5 C Isolation voltage from terminal to heatsink with t = min V AC 5 V Revision: 9-Mar-8 Document Number: 8926 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

Average Forward Rectified Current (A) www.vishay.com MBRF9CT-M3, MBRFCT-M3 ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL MBRF9CT MBRFCT UNIT Maximum instantaneous forward voltage I F = 5. A T C = 25 C.75 per diode () V F V I F = 5. A T C = 25 C.85 Maximum reverse current per diode at T J = 25 C μa working peak reverse voltage (2) I R T J = C 6. ma Notes () Pulse test: 3 μs pulse width, % duty cycle (2) Pulse test: Pulse width 4 ms THERMAL CHARACTERISTICS (T C = 25 C unless otherwise noted) PARAMETER SYMBOL MBRF9CT MBRFCT UNIT Typical thermal resistance per diode R JC 6.8 C/W ORDERING INFORMATION (EXAMPLE) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-22AB MBRFCT-M3/4W.75 4W 5/tube Tube RATINGS AND CHARACTERISTICS CURVES (T C = 25 C unless otherwise noted) 2 8 6 4 2 Resistive or Inductive Load Mounted on Specific Heatsink Peak Forward Surge Current (A) 2 8 6 4 2 T J = T J Max. 8.3 ms Single Half Sine-Wave 25 5 75 25 5 75 Case Temperature ( C) Fig. - Forward Current Derating Curve Number of Cycles at 6 Hz Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 9-Mar-8 2 Document Number: 8926 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

Transient Thermal Impedance ( C/W) Junction Capacitance (pf) www.vishay.com MBRF9CT-M3, MBRFCT-M3 Average Power Loss (W) 4. 3.5 3. 2.5 2..5. D =. D =.2 D =.3 D =.5 D =.8 D =. T T J = 25 C f = MHz V sig = 5 mvp-p.5 D = t p /T t p 2 3 4 5 6 Average Forward Current (A). Reverse Voltage (V) Fig. 3 - Forward Power Loss Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode Instantaneous Forward Current (A) T A = 5 C T A = 25 C T A = C T A = 25 C Junction to Case..2.4.6.8..2.4.6 Instantaneous Forward Voltage (V) Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode.. t - Pulse Duration (s) Fig. 7 - Typical Transient Thermal Impedance Per Diode Instantaneous Reverse Current (ma) T A = 5 C... T A = 25 C T A = C T A = 25 C. 2 3 4 5 6 7 8 9 Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Reverse Characteristics Per Diode Revision: 9-Mar-8 3 Document Number: 8926 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

MBRF9CT-M3, MBRFCT-M3 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Revision: 9-Mar-8 4 Document Number: 8926 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

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