Dual Volt P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 6.9 A, V. R DS(ON) = m @ V GS = V R DS(ON) = 5 m @ V GS =.5 V Extended V GSS range ( 5V) for battery applications ESD protection diode (note ) High performance trench technology for extremely low R DS(ON) High power and current handling capability SO-8 DD DD DD D Pin SO-8 G G S S GS S S 5 6 7 8 Q Q Absolute Maximum Ratings T A =5 o C unless otherwise noted Symbol Parameter Ratings Units V DS\ Drain-Source Voltage V V GS Gate-Source Voltage +5 V I D Drain Current Continuous (Note a) 6.9 A Pulsed 5 P D Power Dissipation for Single Operation (Note a).6 W (Note b). (Note c).9 T J, T STG Operating and Storage Junction Temperature Range 55 to +5 C Thermal Characteristics R JA Thermal Resistance, Junction-to-Ambient (Note a) 78 C/W R JC Thermal Resistance, Junction-to-Case (Note ) C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity mm 5 units 6 Semiconductor Components Industries, LLC. October-7, Rev. Publication Order Number: /D
Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = 5 A V BVDSS T J Breakdown Voltage Temperature Coefficient I D = 5 A,Referenced to 5 C mv/ C I DSS Zero Gate Voltage Drain Current V DS = V, V GS = V A I GSS Gate Body Leakage V GS = +5 V, V DS = V + A On Characteristics (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 5 A.9 V VGS(th) T J r DS(on) Gate Threshold Voltage Temperature Coefficient Static Drain Source On Resistance I D = 5 A,Referenced to 5 C V GS = V, I D = 6.9 A V GS =.5 V, I D = 5. A V GS = V, I D = 6.9A,T J =5 C 5 mv/ C g FS Forward Transconductance V DS = 5 V, I D = 6.9 A S Dynamic Characteristics C iss Input Capacitance V DS = 5 V, V GS = V, 6 pf C oss Output Capacitance f =. MHz pf Reverse Transfer Capacitance pf C rss Switching Characteristics (Note ) t d(on) Turn On Delay Time V DD = 5 V, I D = A, ns t r Turn On Rise Time V GS = V, R GEN = 6 ns t d(off) Turn Off Delay Time 68 8 ns t f Turn Off Fall Time 8 6 ns Q g(tot) Total Gate Charge, V GS = V V DS = 5 V, I D = 6.9 A, 9 nc Q g(tot) Total Gate Charge, V GS = 5V V GS = V 6 nc Q gs Gate Source Charge nc Gate Drain Charge 7 nc Q gd Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current. A V SD Drain Source Diode Forward Voltage V GS = V, I S =. A (Note ).8. V t RR Reverse Recovery Time I F = 8.8 A, ns Reverse Recovery Charge d if /d t = A/µs (Note ) 9 nc Q RR Notes:. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design. 8 7.5 6 5 m a) 78 C/W steady state when mounted on a in pad of oz copper b) 5 C/W when mounted on a. in pad of oz copper c) 5 C/W when mounted on a minimum pad. Scale : on letter size paper. Pulse Test: Pulse Width < s, Duty Cycle <.%. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Typical Characteristics 5 V GS = -V -5.V V GS = -.5V -6.V -.5V -.V -.5V -.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.6..8. -.V -.5V -5.V -6.V -8.V -V -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. On-Region Characteristics..6 5 Figure. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.6...8 I D = -8.8A V GS = -V R DS(ON), ON-RESISTANCE (OHM).8.6.. T A = 5 o C T A = 5 o C I D = -.A.6-5 -5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( o C) Figure. On-Resistance Variation with Temperature. 6 8 -V GS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance Variation with Gate-to-Source Voltage. 5 V DS = -5V T A = 5 o C 5 o C -55 o C.5.5.5 5 -V GS, GATE TO SOURCE VOLTAGE (V) -I S, REVERSE DRAIN CURRENT (A)... V GS = V T A = 5 o C 5 o C -55 o C..8..6 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
Typical Characteristics -V GS, GATE-SOURCE VOLTAGE (V) I D = -8.8A 8 V DS = -V 6-5V -V CAPACITANCE (pf) 6 8 C rss C oss C iss f = MHz V GS = V 6 8 6 Q g, GATE CHARGE (nc) Figure 7. Gate Charge Characteristics. 5 5 5 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 5. R DS(ON) LIMIT V GS = -V R JA = 5 o C/W T A = 5 o C s ms ms ms s DC P(pk), PEAK TRANSIENT POWER (W) R JA = 5 C/W T A = 5 C... -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area.... t, TIME (sec) Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D =.5...5....... t, TIME (sec) R JA (t) = r(t) * R JA R JA = 5 o C/W P(pk) t t T J - T A = P * R JA (t) Duty Cycle, D = t / t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design.
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