TSM V P-Channel MOSFET

Similar documents
Not Recommended. TSM V N-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application

TSM V P-Channel MOSFET

TSM V P-Channel MOSFET

TSM V N-Channel MOSFET

TSM6866SD 20V Dual N-Channel MOSFET

TSM V P-Channel MOSFET

TSM4936D 30V N-Channel MOSFET

TSM V N-Channel MOSFET

TSM2307CX 30V P-Channel MOSFET

Not Recommended. TSM V P-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application

N-Channel Power MOSFET 40V, 3.9A, 45mΩ

TSM V N-Channel MOSFET w/esd Protected

TSM V N-Channel MOSFET

TSM V P-Channel MOSFET

N-Channel Power MOSFET 100V, 160A, 5.5mΩ

N-Channel Power MOSFET 800V, 0.3A, 21.6Ω

N-Channel Power MOSFET 100V, 81A, 10mΩ

TSM3N90 900V N-Channel Power MOSFET

TSM4946D 60V Dual N-Channel MOSFET

Dual P-Channel MOSFET -60V, -12A, 68mΩ

Dual N-Channel MOSFET 30V, 20A, 20mΩ

TSM6N50 500V N-Channel Power MOSFET

Dual N-Channel MOSFET 30V, 20A, 20mΩ

N-Channel Power MOSFET 900V, 4A, 4.0Ω

N-Channel Power MOSFET 150V, 1.4A, 480mΩ

N-Channel Power MOSFET 60V, 38A, 17mΩ

N-Channel Power MOSFET 600V, 1A, 10Ω

TSM V P-Channel Power MOSFET

N-Channel Power MOSFET 30V, 78A, 3.8mΩ

TSM650P03CX 30V P-Channel Power MOSFET

N-Channel Power MOSFET 60V, 70A, 12mΩ

Preliminary TSM9N50 500V N-Channel Power MOSFET

N-Channel Power MOSFET 150V, 9A, 65mΩ

TSM1N60L 600V N-Channel Power MOSFET

P-Channel Power MOSFET -40V, -22A, 15mΩ

N-Channel Power MOSFET 40V, 135A, 3.8mΩ

N-Channel Power MOSFET 700V, 11A, 0.38Ω

N-Channel Power MOSFET 600V, 11A, 0.38Ω

N-Channel Power MOSFET 600V, 18A, 0.19Ω

N-Channel Power MOSFET 30V, 185A, 1.8mΩ

N-Channel Power MOSFET 600V, 18A, 0.19Ω

N-Channel Power MOSFET 100V, 46A, 16mΩ

N-Channel Power MOSFET 500V, 9A, 0.9Ω

N- and P-Channel 60V (D-S) Power MOSFET

N-Channel Power MOSFET 40V, 121A, 3.3mΩ

TSM480P06CI C0G TSM480P06CZ C0G Not Recommended

3000/Tape&Reel. 2 P D Maximum Power Dissipation TA = 75 o C 1.44 T J, T stg Operating Junction and Storage Temperature Range

TSM2N60E 600V, 2A, 4Ω N-Channel Power MOSFET

N-Channel 30-V (D-S) MOSFET

TSM900N06 60V N-Channel Power MOSFET

TSM340N06CI C0G TSM340N06CZ C0G Not Recommended

TSM70N V, 6A, 0.75Ω N-Channel Power MOSFET

N-Channel 60-V (D-S) MOSFET

N-Channel 100-V (D-S) 175 C MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET

N-Channel 20-V (D-S) MOSFETs

N-Channel 30-V (D-S) 175 C MOSFET

N-Channel 60-V (D-S), 175 C MOSFET

P-Channel 2.5-V (G-S) MOSFET

Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET

Automotive P-Channel 80 V (D-S) 175 C MOSFET

N-Channel 30-V (D-S) MOSFET

N-Channel 100-V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET

N-Channel 30-V (D-S) MOSFET

P-Channel 100 V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET

N-Channel Power MOSFET 600V, 0.5A, 10Ω

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level

Dual P-Channel 60-V (D-S) 175 MOSFET

Dual P-Channel 20-V (D-S) MOSFET

N-Channel 40-V (D-S), 175 C MOSFET

N-Channel 75-V (D-S) 175 C MOSFET

P-Channel 30-V (D-S), MOSFET

N-Channel 20 V (D-S) MOSFET

N-Channel 240 -V (D-S) MOSFET

Automotive N-Channel 300 V (D-S) 175 C MOSFET

N-Channel 150-V (D-S) MOSFET

P-Channel 55-V (D-S), 175 C MOSFET

P-Channel 60-V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET

P-Channel 1.8 V (G-S) MOSFET

P-Channel 40 V (D-S), 175 C MOSFET

N-Channel 100 V (D-S) MOSFET

N- and P-Channel 30 V (D-S) MOSFET

40V N-Channel Trench MOSFET

Dual P-Channel 20-V (D-S) MOSFET

RM4503S8. N and P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Package Marking and Ordering Information

P-Channel 20-V (D-S) MOSFET

Features. Drain SOT23 D. Gate. Source. Part Number Case Packaging DMG3414UQ-7 SOT23 3,000/Tape & Reel DMG3414UQ-13 SOT23 10,000/Tape & Reel

Automotive N-Channel 100 V (D-S) 175 C MOSFET

N-Channel 40 V (D-S) MOSFET

P-Channel 8-V (D-S) MOSFET

P-Channel 40 V (D-S) 175 C MOSFET

Dual N-Channel 20-V (D-S) MOSFET

Features SOT363. Top View. Part Number Case Packaging DMN2004DWK-7 SOT363 3,000/Tape & Reel

Dual P-Channel 40 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET

Complementary 20 V (D-S) MOSFET

Transcription:

SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 39 @ V GS = -4.5V -4.7-20 52 @ V GS = -2.5V -4.1 68 @ V GS = -1.8V -2.0 Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Block Diagram P-Channel MOSFET Part No. Package Packing TSM2323CX RFG SOT-23 3Kpcs / 7 Reel Note: G denote for Green Product Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±8 V Continuous Drain Current, V GS @ 4.5V. I D -4.7 A Pulsed Drain Current, V GS @ 4.5V I DM -20 A Continuous Source Current (Diode Conduction) a,b I S -1.0 A Maximum Power Dissipation Ta = 25 C P D 1.25 Ta = 70 C 0.8 Operating Junction Temperature T J +150 C Operating Junction and Storage Temperature Range T J, T STG - 55 to +150 C Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance RӨ JC 75 C/W Junction to Ambient Thermal Resistance (PCB mounted) RӨ JA 120 C/W Notes: a. Surface Mounted on 1 x 1 FR4 Board. b. Pulse width limited by maximum junction temperature W Document Number: DS_P0000058 1 Version: F15

Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, I D = - 250uA BV DSS -20 -- -- V Gate Threshold Voltage V DS = V GS, I D = - 250uA V GS(TH) -0.4 -- -1.0 V Zero Gate Voltage Drain Current V DS = -16V, V GS = 0V I DSS -- -- -1.0 ua Gate Body Leakage V GS = ±8V, V DS = 0V I GSS -- -- ±100 na On-State Drain Current V DS -5V, V GS = -4.5V I D(ON) -20 -- -- A Drain-Source On-State Resistance V GS = -4.5V, I D = -4.7A R DS(ON) -- 31 39 V GS = -2.5V, I D = -4.1A -- 41 52 V GS = -1.8V, I D = -2.0A -- 54 68 Forward Transconductance V DS = - 5V, I D = - 4.7A g fs -- 16 -- S Diode Forward Voltage I S = - 1.0A, V GS = 0V V SD -- - 0.7-1.2 V Dynamic b Total Gate Charge Q g -- 12.5 19 V DS = -10V, I D = -4.7A, Gate-Source Charge Q gs -- 1.7 -- V GS = -4.5V Gate-Drain Charge Q gd -- 3.3 -- Input Capacitance C iss -- 1020 -- V DS = -10V, V GS = 0V, Output Capacitance C oss -- 191 -- f = 1.0MHz Reverse Transfer Capacitance C rss -- 140 -- Switching b,c Turn-On Delay Time t d(on) -- 25 40 V DD = -10V, R L = 10Ω, Turn-On Rise Time t r -- 43 65 I D = -1A, V GEN = -4.5V, Turn-Off Delay Time t d(off) -- 71 110 R G = 6Ω Turn-Off Fall Time t f -- 48 75 Notes: a. pulse test: PW 300µS, duty cycle 2% b. Guaranteed by design of component. c. Switching time is essentially independent of operating temperature. mω nc pf ns Document Number: DS_P0000058 2 Version: F15

Electrical Characteristics Curve (Ta = 25 C, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage Document Number: DS_P0000058 3 Version: F15

Electrical Characteristics Curve (Ta = 25 C, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: DS_P0000058 4 Version: F15

SOT-23 Mechanical Drawing SOT-23 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX. A 0.95 BSC 0.037 BSC A1 1.9 BSC 0.074 BSC B 2.60 3.00 0.102 0.118 C 1.40 1.70 0.055 0.067 D 2.80 3.10 0.110 0.122 E 1.00 1.30 0.039 0.051 F 0.00 0.10 0.000 0.004 G 0.35 0.50 0.014 0.020 H 0.10 0.20 0.004 0.008 I 0.30 0.60 0.012 0.024 J 5º 10º 5º 10º Marking Diagram 23 = Device Code Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code Document Number: DS_P0000058 5 Version: F15

Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000058 6 Version: F15