g26171fa-gr1a GTVA26171FA Thermally-Enhanced High Power RF GaN on SiC HEMT 17 W, 5 V, 26 269 MHz Description The GTVA26171FA is a 17-watt (P 3dB ) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. GTVA26171FA Package H-37265J-2 Peak/Average Ratio, (db) 32 28 24 8 4 V DD = 48 V, I DQ = ma, ƒ = 26 MHz 1 db PAR, 3.84 MHz bandwidth PAR @.1% CCDF - -4-6 -8 8 6 4 (%) Features GaN on SiC HEMT technology Input Matched Typical CW performance, 269 MHz, 48 V, single side - Output power at P 3dB = 17 W - = 75% - = db Human Body Model, Class 1B (per ANSI/ESDA/ JEDEC JS-1) Capable of handling 1:1 VSWR @48 V, 4 W (CW) output power RoHS-compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture) V DD = 48 V, I DQ = ma, P OUT = 4 W avg, ƒ = 269 MHz. 3GPP WDMA signal, 3.84 MHz channel bandwidth, 1 db peak/ average @.1% CCDF. Characteristic Symbol Min Typ Max Unit G ps 17 db Drain h D 38 43 % Adjacent Channel Power Ratio ACPR 29 25 dbc All published data at T CASE = 25 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions! Rev. 5, -5-8 46 Silicon Drive Durham, NC 2773 www.wolfspeed.com
GTVA26171FA 2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage V GS = 8 V, I D = 21 ma V (BR)DSS V Drain-source Leakage Current V GS = 8 V, V DS = 5 V I DSS 5 ma Gate Threshold Voltage V DS = 1 V, I D = 21 ma V GS(th) 3.8 3. 2.3 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage V DD 5 V Gate Quiescent Voltage V DS = 5 V, I D = 1. A V GS(Q) 2.8 V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage V DSS 5 V Gate-source Voltage V GS 1 to +2 V Gate Current I G ma Drain Current I D 7.5 A Junction Temperature T J 225 C Storage Temperature Range T STG 65 to + C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD ) specified above. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance (T CASE = 7 C, 5 W (CW), V DD = 48 V, 26 MHz) RqJC 1.7 C/W Ordering Information Type and Version Order Code Package Shipping GTVA26171FA V1 RO GTVA26171FA-V1-R H-37265J-2, earless flange Tape & Reel, 5 pcs GTVA26171FA V1 R2 GTVA26171FA-V1-R2 H-37265J-2, earless flange Tape & Reel, 25 pcs Rev. 5, -5-8 46 Silicon Drive Durham, NC 2773 www.wolfspeed.com
g26171fa-gr1b g26171fa-gr1c g26171fa-gr2b GTVA26171FA 3 Typical Performance (data taken in an Wolfspeed production test fixture) 32 V DD = 48 V, I DQ = ma, ƒ = 2655 MHz 1 db PAR, 3.84 MHz bandwidth 8 32 V DD = 48 V, I DQ = ma, ƒ = 269 MHz 1 db APR, 3.84 MHz bandwidth 8 Peak/Average Ratio, (db) 28 24 8 6 4 - -4 4 PAR @.1% CCDF -6-8 (%) Peak/Average Ratio, (db) 28 24 8 4 PAR @.1% CCDF 6 4 - -4-6 -8 (%) V DD = 48 V, I DQ = ma, ƒ = 26 MHz, 1 db PAR, 3.84 MHz bandwidth V DD = 48 V, I DQ = ma, ƒ = 2655 MHz, 1 db PAR, 3.84 MHz bandwidth -5 65-5 65 ACP Up & Low (dbc) - -25-35 -45-55 ACP Low ACP Up 55 45 35 25 Drain (%) ACP Up & Low (dbc) - -25-35 -45-55 ACP Low ACP Up 55 45 35 25 Drain (%) -65 5-65 g26171fa-gr2a 5 Rev. 5, -5-8 46 Silicon Drive Durham, NC 2773 www.wolfspeed.com
g26171fa-gr3 g26171fa-gr5 GTVA26171FA 4 Typical Performance (cont.) -5 V DD = 48 V, I DQ = ma, ƒ = 269 MHz, 1 db PAR, 3.84 MHz bandwidth 65 19 Single-carrier WCDMA Broadband Performance V DD = 48 V, I DQ = ma, P OUT = 46.dBm, 1. db PAR 55 ACP Up & Low (dbc) - -25-35 -45-55 ACP Up ACP Low 55 45 35 25 Drain (%) (db) 17 5 45 4 Drain (%) -65 5 255 26 265 27 275 g26171fa-gr2c 35 Frequency (MHz) Single-carrier WCDMA Broadband Performance V DD = 48 V, I DQ = ma, P OUT = 46 dbm, 1. db PAR CW Performance V DD = 48 V, I DQ = ma -1-1 8 ACP Up (dbc) - - -25-3 ACP Up Return Loss - - -25-3 Return Loss (db) (db) 19 17 14 13 7 6 5 4 3 1 (%) -35-35 255 26 265 27 275 55 g26171fa-gr4 Frequency (MHz) Output Power (dbm) Rev. 5, -5-8 46 Silicon Drive Durham, NC 2773 www.wolfspeed.com
g26171fa-gr6b g26171fa-gr7 GTVA26171FA 5 Typical Performance (cont.) CW Performance at specified V DD I DQ = ma, ƒ = 26 MHz CW Performance at specified V DD I DQ = ma, ƒ = 2655 MHz 8 8 19 7 19 7 Power (db) 17 14 44 V 13 48 V 52 V 1 55 6 5 4 3 (%) Power (db) 17 14 13 44 V 48 V 52 V 55 g26171fa-gr6a 6 5 4 3 1 (%) Output Power (dbm) Output Power (dbm) CW Performance at specified V DD I DQ = ma, ƒ = 269 MHz Small Signal CW Perforrmance V DD = 48 V, I DQ = ma 8-8 Power (db) 19 17 14 44 V 13 48 V 52 V 1 55 Output Power (dbm) 7 6 5 4 3 (%) Power (db) 14 1 8 6 4 245 255 265 275 285 g26171fa-gr6c -4 Frequency (MHz) Input Return Loss - - - -24-28 -32-36 Input Return Loss (db) Rev. 5, -5-8 46 Silicon Drive Durham, NC 2773 www.wolfspeed.com
GTVA26171FA 6 Load Pull Performance Z Source D Z Load G S Single side, pulsed CW signal: 1 µsec, 1% duty cycle; 48 V, ma Class AB Max Output Power Max Freq [MHz] Z source [W] Z load [W] [db] P OUT [dbm] P OUT [W] [%] P 3dB Z load [W] [db] P OUT [dbm] P OUT [W] [%] 26. j 5.7 2.9 j2.. 53.81 24 64.8 2.1 j..7 51.62 145 76.9 2655. j 8. 2.6 j2.3 14.8 53.68 233 65.3 2.2 j.2.3 51.76 75.9 269.6 j1. 2.8 j2.2 14.6 53.71 235 66.7 2.1 j.2.1 51.93 6 77. See next page for reference circuit infomation Rev. 5, -5-8 46 Silicon Drive Durham, NC 2773 www.wolfspeed.com
g t v a2 61 7 1 f a _ C D _ 5-1 7-2 1 8 GTVA26171FA 7 Reference Circuit tuned for 26 to 269 MHz DUT GTVA26171FA V1 Test Fixture Part No. LTN/GTVA26171FA PCB Rogers 435,.58 mm [."] thick, 2 oz. copper, ε r = 3.66 Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/rf C5 VDD C C14 C13 C213 C6 C7 C8 GTVA26171FA OUT_2A RF_IN VGG C11 C L11 R11 C2 C4 C1 RF_OUT C3 C2 RO435, MIL C21 VDD RO435, MIL (61) GTVA26171FA_IN_2A C9 C211 Reference circuit assembly diagram (not to scale) Rev. 5, -5-8 46 Silicon Drive Durham, NC 2773 www.wolfspeed.com
GTVA26171FA 8 Reference Circuit (cont.) Components Information Component Description Manufacturer P/N In C11, C13 Capacitor, 1 pf ATC ATC8A1JT25T C Capacitor, 1.3 pf ATC ATC8A1R3CT25T C14 Capacitor,.47 µf Johanson Dielectrics Inc. 11X43W474MV4E C Capacitor, 1 µf Panasonic Electronic Components EEE-FT1V11AP L11 Inductor, 1 nh ATC ATC63WL11JT R11 Resistor, 1 ohms Panasonic Electronic Components ERJ-8GEYJ1V Out C1, C2, C213 Capacitor, 1 pf ATC ATC8A1JT25T C2, C3 Capacitor, 1.9 pf ATC ATC8A1R9CT25T C4 Capacitor, 1 pf ATC ATC8A1RCT25T C5, C9 Capacitor, 1 pf Johanson Dielectrics Inc. 11XW13MV4E C6, C7, C21, Capacitor,.47 µf Johanson Dielectrics Inc. 11X43W474MV4E C211 C8 Capacitor, 2 µf Panasonic Electronic Components ECA-2AHG221 See next page for package mechanical specifications Rev. 5, -5-8 46 Silicon Drive Durham, NC 2773 www.wolfspeed.com
H-37265J-2_2_po_5-29- GTVA26171FA 9 Package Outline Specifications Package H-37265J-2 45 X.64 [.25] 2X 6.35 [.25] D 2X 2.59±.51 [.±.] FLANGE 1. [.4] C L LID 1.±.25 [.4±.1] (.34 [.64]) FLANGE 4X R.63 [R.25] MAX C L G SPH 1.57 [.62] 1.±.25 [.4±.1] 3.61±.38 [.142±.] 1.2 1. [.4] [.4] S Diagram Notes unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±.7 [.5] unless specified otherwise. 4. Pins: D drain; G gate; S source. 5. Lead thickness:.1 +.51/-.25 mm [.4 +.2/-.1 inch]. 6. Gold plating thickness: 1.14 ±.38 micron [45 ± microinch]. Rev. 5, -5-8 46 Silicon Drive Durham, NC 2773 www.wolfspeed.com
GTVA26171FA 1 Revision History Revision Date Data Sheet Page Subjects (major changes since last revision) 1-5-29 Advance All Data Sheet reflects advance specification for product development 2-6-29 Preliminary All Data Sheet reflects preliminary specification 3-3-28 Production 3 to 8 4 17-4-6 Production 1 2 Information for production-released product, including firm specifications, performance curves, load pull table, and reference circuit information. Remove "Integrated ESD protection" from Features Restructure tables for clarity. 5-5-8 Production All Converted to Wolfspeed Data Sheet For more information, please contact: 46 Silicon Drive Durham, North Carolina, USA 2773 www.wolfspeed.com/rf Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.47.78 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc. Rev. 5, -5-8 www.wolfspeed.com