MC33/A/B MC3/A/B MC3/A/B GENERAL PURPOSE SINGLE JFET OPERATIONAL AMPLIFIERS. LOW POWER CONSUMPTION WIDE COMMONMODE (UP TO VCC + ) AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT. OUTPUT SHORTCIRCUIT PROTECTION HIGH INPUT IMPEDANCE J FET INPUT STAGE INTERNAL FREQUENCY COMPENSATION. LATCH UP FREE OPERATION HIGH SLEW RATE : 6V/µs (typ) N DIP8 (Plastic Package) D SO8 (Plastic Micropackage) DESCRIPTION These circuits are high speed J FET input single operational amplifiers incorporating well matched, high voltage J FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset current, and low offset voltage temperature coefficient. PIN CONNECTIONS (top view) ORDER CODES Part Number Temperature Package N D MC3/A/B o C, +7 o C MC33/A/B o C, + o C MC3/A/B o C, + o C 33.TBL 3 + 8 7 6 Offset Null Inverting input 3 Noninverting input Offset Null 6 Output 7 + 8 N.C. April 99 /9
MC33/A/B MC3/A/B MC3/A/B SCHEMATIC DIAGRAM Noninverting input Inverting input Ω Ω Output 3k Ω 8.k.3k 3k.3k 3k Ω Offset Null Offset Null 333.EPS INPUT OFFSET VOLTAGE NULL CIRCUITS MC3 N N k Ω 33.EPS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Supply Voltage (note ) ±8 V V I Input Voltage (note 3) ± V V id Differential Input Voltage (note ) ±3 V P tot Power Dissipation 68 mw Output Shortcircuit Duration (note ) Infinite T oper Operating Free Air Temperature Range MC3, A, B MC33, A, B MC3, A, B to 7 to to T stg Storage Temperature Range 6 to Notes :. All voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the zero reference level is the midpoint between + and.. Differential voltages are at the noninverting input terminal with respect to the inverting input terminal. 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or volts, whichever is less.. The output may be shorted to ground or to either supply. Temperature and /or supply voltages must be limited to ensure that the dissipation rating is not exceeded. o C o C 33.TBL /9
MC33/A/B MC3/A/B MC3/A/B ELECTRICAL CHARACTERISTICS VCC = ±V, Tamb = o C (unless otherwise specified) Symbol V io Parameter Input Offset Voltage (R S kω) T amb = o C MC3B, MC3B, MC33B MC3A, MC3A, MC33A T min. T amb T max. MC3B, MC3B, MC33B MC3A, MC3A, MC33A MC3A,B MC33A,B MC3A,B MC3 MC33 MC3 Min. Typ. Max. Min. Typ. Max. 3. 7 3 DV io Input Offset Voltage Drift µv/ o C I io Input Offset Current * T amb = o C Tmin. Tamb Tmax. Iib Input Bias Current * T amb = o C T min. T amb T max. A vd SVR I CC Large Signal Voltage Gain (R L = kω, V O = ±V) T amb = o C T min. T amb T max. Supply Voltage Rejection Ratio (R S kω) T amb = o C 8 86 7 86 T min. T amb T max. 8 7 Supply Current, no Load T amb = o C.. T min. T amb T max..8 V icm Input Common Mode Voltage Range ± + CMR Ios ±VOPP 3 ± + Common Mode Rejection Ratio (RS kω) Tamb = o C 8 86 7 86 T min. T amb T max. 8 7 Output Shortcircuit Current T amb = o C Tmin. Tamb Tmax. Output Voltage Swing T amb = o C Tmin. Tamb Tmax. R L = kω R L = kω RL = kω R L = kω 6 6 3....8 6 6 SR Slew Rate (V in = V, R L = kω, C L = pf, V/µs T amb = o C, unity gain) 6 6 t r Rise Time (V in = mv, R L = kω, C L = pf, µs Tamb = o C, unity gain).. KOV Overshoot (Vin = mv, RL = kω, CL = pf, T amb = o C, unity gain) % GBP Gain Bandwidth Product (f = khz, MHz T amb = o C, V in = mv, R L = kω, C L = pf).. R i Input Resistance Ω THD Total Harmonic Distortion (f = khz, A V = db, RL = kω, CL = pf, Tamb = o C, VO = VPP).. % en 3. Equivalent Input Noise Voltage (f = khz, R s = Ω) m Phase Margin Degrees * The input bias currents are junction leakage currents which approximately double for every o C increase in the junction temperature. Unit mv pa na pa na V/mV db ma V db ma V nv Hz 333.TBL 3/9
MC33/A/B MC3/A/B MC3/A/B VOLTAGE VERSUS FREQUENCY VOLTAGE VERSUS FREQUENCY 3 = V = V = V R L = kω T amb = + C K K K M M 33.EPS 3 = = = V V V R = kω L T amb = + C K K K M M 336.EPS VOLTAGE VERSUS FREQUENCY VOLTAGE VERSUS FREE AIR TEMP. 3 T amb = + C T amb = C T amb = + C k k k k M M M = V R L = k Ω 337.EPS 3 R L = kω R L = kω = V 7 7 TEMPERATURE ( C) 338.EPS VOLTAGE VERSUS LOAD RESISTANCE VOLTAGE VERSUS SUPPLY VOLTAGE 3 V = V CC T amb = + C....7 7 LOAD RESISTANCE (k Ω) 339.EPS 3 R L = kω T amb = + C 6 8 6 SUPPLY VOLTAGE ( V) 33.EPS /9
MC33/A/B MC3/A/B MC3/A/B INPUT BIAS CURRENT VERSUS FREE AIR TEMPERATURE LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION VERSUS FREE AIR TEMPERATURE INPUT BIAS CURRENT (na) = V.. 7 33.EPS DIFFERENTIAL VOLTAGE AMPLIFICATION (V/V) = V V O = V R = k Ω L 7 7 33.EPS LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT VERSUS FREQUENCY TOTAL POWER DISSIPATION VERSUS FREE AIR TEMPERATURE DIFFERENTIAL VOLTAGE AMPLIFICATION (V/V) 6 3 PHASE SHIFT (right scale) = V to V R L = kω T amb = + C DIFFERENTIAL VOLTAGE AMPLIFICATION (left scale) 8 k k k M M 9 3 333.EPS TOTAL POWER DISSIPATION (mw) 7 7 = V No signal No load 7 7 33.EPS SUPPLY CURRENT PER AMPLIFIER VERSUS FREE AIR TEMPERATURE SUPPLY CURRENT PER AMPLIFIER VERSUS SUPPLY VOLTAGE SUPPLY CURRENT (ma)..8.6....8.6.. = V No signal No load 7 7 33.EPS SUPPLY CURRENT (ma)..8.6....8.6.. T amb = + C No signal No load 6 8 6 SUPPLY VOLTAGE ( V) 336.EPS /9
MC33/A/B MC3/A/B MC3/A/B COMMON MODE REJECTION RATIO VERSUS FREE AIR TEMPERATURE VOLTAGE FOLLOWER LARGE SIGNAL PULSE RESPONSE COMMON MODE MODE REJECTION RATIO (db) 89 88 87 86 8 8 83 7 R L = kω = V 7 INPUT AND OUTPUT VOLTAGES (V) 6 6 OUTPUT INPUT = V R L = kω C L = pf T amb = + C... 3 3. 337.EPS TIME ( µs) 338.EPS OUTPUT VOLTAGE VERSUS ELAPSED TIME EQUIVALENT INPUT NOISE VOLTAGE VERSUS FREQUENCY OUTPUT VOLTAGE (mv) 8 6 8 OVERSHOOT % 9% = V R L = k Ω T t amb = + C r...3...6.7 TIME ( µs) 339.EPS EQUIVALENT INPUT NOISE VOLTAGE (nv/vhz) 7 6 3 = V A V = R S = Ω T amb = + C k k k k k 33.EPS TOTAL HARMONIC DISTORTION VERSUS FREQUENCY TOTAL HARMONIC DISTORTION (%) V. CC = = V V AAV V = = V V. O O (rms) (rms) = = 6V 6V T amb T. amb = = + C... k k k k k 33.EPS 6/9
MC33/A/B MC3/A/B MC3/A/B PARAMETER MEASUREMENT INFORMATION Figure : Voltage Follower Figure : Gainof Inverting Amplifier k Ω MC3 e o e I k Ω MC3 e o e I C L = pf R = kω L R L C L = pf 33.EPS 333.EPS TYPICAL APPLICATIONS (.Hz) SQUARE WAVE OSCILLATOR R F = k Ω 3.3k Ω +V MC3 C = 3.3 µf F V 3.3k Ω k Ω 9.k Ω f = osc x R C F F 33.EPS HIGH Q NOTCH FILTER R R C3 MC3 f = o x R C = khz R3 C = C = C3 = pf R + R + R3 +.MΩ C C 33.EPS 7/9
a L I MC33/A/B MC3/A/B MC3/A/B PACKAGE MECHANICAL DATA 8 PINS PLASTIC DIP e b B B e E Z e3 Z D 8 F A b Dimensions Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 3.3.3 a.. B..6..6 b.36... b..3.8. D.9.3 E 7.9 9.7.33.38 e.. e3 7.6.3 e 7.6.3 F 6.6 6 i.8. L 3.8 3.8.. Z..6 PMDIP8.EPS DIP8.TBL 8/9
F MC33/A/B MC3/A/B MC3/A/B PACKAGE MECHANICAL DATA 8 PINS PLASTIC MICROPACKAGE (SO) L C c a3 a A b e3 e s a E b D M 8 Dimensions Millimeters Inches Min. Typ. Max. Min. Typ. Max. A.7.69 a.... a.6.6 a3.6.8.6.33 b.3.8..9 b.9..7. C.... c o (typ.) D.8..89.97 E.8 6..8. e.7. e3 3.8. F 3.8...7 L..7.6. M.6. S 8 o (max.) PMSO8.EPS SO8.TBL Information furnished is believed to be accurate and reliable. However, SGSTHOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGSTHOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGSTHOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGSTHOMSON Microelectronics. 99 SGSTHOMSON Microelectronics All Rights Reserved SGSTHOMSON Microelectronics GROUP OF COMPANIES Australia Brazil France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco The Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. ORDER CODE : 9/9