FD6M043N0 75V/65A Synchronous Rectifier Module General Features Very High Rectification Efficiency at Output 12V Integrated Solution for Saving Board Space RoHS Compliant MOSFET Features VDSS = 75V QG(TOTAL) = 99nC(Typ.), VGS = V R DS(ON) = 3.5mΩ(Typ.), = V, I D = 40A Low Miller Charge Low Q rr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Fully Isolated Package General Description March 200 Power-SPM TM The FD6M043N0 is one product in the Power-SPM TM family that Fairchild has newly developed and designed to be most suitable for more compact and more efficient synchronous rectification applications such as internet server power supplies and telecom system power supplies. For higher efficiency, it includes built-in very low R DS(ON) MOSFETs. This Power-SPM device can be used in the secondary side of the PWM transformer of forward/bridge converter to provide high current rectification at output voltages ranging from 12 Volts down to 5 Volts. With this product, it is possible to design the secondary side of power supply systems with reduced parasitic elements resulting in minimized voltage spike and EMI noise. Applications High Current Isolated Converter Distributed Power Architectures Synchronous Rectification DC/DC Converter Battery Supplied Application ORing MOSFET tm 1 EPM Package Block Diagram 9 G2 Q2 6 G1 S2 14 13 12 7 Q1 11 S1 1 2 3 4 5 Figure 1. FD6M043N0 Module Block Diagram 200 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FD6M043N0 Rev. A
Pin Configuration and Pin Description Top View S1 G1 NC G2 S2 NC NC Figure 2. Pinmap of FD6M043N0 Pin Number Pin Name Pin Description 1 Drain of Q1, MOSFET 2 ~ 5 S1 Source of Q1, MOSFET 6 G1 Gate of Q1, MOSFET 7 NC No Connection NC No Connection 9 NC No Connection G2 Gate of Q2, MOSFET 11 ~ 14 S2 Source of Q2, MOSFET Drain of Q2, MOSFET Absolute Maximum Ratings T C = 25 C, Unless Otherwise Specified Symbol Parameter Rating Unit Drain to Source Voltage (Note1) 75 V Gate to Source Voltage ±20 V I D Drain Current, Continuous ( = V) (Note1) 65 A E AS Single Pulse Avalanche Energy (Note1,2) 61 mj T J, T STG Operating and Storage Temperature Range -40 ~ 0 C Thermal Resistance Symbol Parameter Min. Typ. Max. Unit R θjc Junction to Case Thermal Resistance (Note1) - - 3.9 C/W Note: 1. Each MOSFET Switch 2. Starting T J = 25 C, V D = 40V, L = 0.2mH, I AS = 56.4A FD6M043N0 Rev. A 2 www.fairchildsemi.com
Electrical Characteristics T C = 25 C, Unless Otherwise Specified Symbol Parameter Test Conditions Min. Typ. Max. Units Synchronous Rectifier Switch Part (Each Switch) BS Drain to Source Breakdown Voltage I D = 250μA, = 0V 75 - - V I DSS Zero Gate Voltage Drain Current = 0V, = 60V - - 1 μa I GSS Gate to Source Leakage Current = ±20V - - ±0 na (TH) Gate Threshold Voltage V D = 20V, I DS = 250μA 2.0-4.0 V R DS(ON) Drain to Source On Resistance I D = 40A, = V - 3.5 4.3 T J = 0 C - 6.44 - mω Dynamic Charateristics C ISS Input Capacitance - 610 - pf = 25V, = 0V, C OSS Output Capacitance - 990 - pf f = 1MHz C RSS Reverse Transfer Capacitance - 3 - pf Q g(tot) Total Gate Charge at V = 0V to V - 99 14 nc Q g(th) Threshold Gate Charge = 0V to 2V - 12 1 nc Q gs Gate to Source Gate Charge V DD = 40V - 30 - nc Q gs2 Gate Charge Threshold to Plateau I D = 0A - 1 - nc Q gd Gate to Drain MIller Charge I g = 1.0mA - 25 - nc Switching Charateristics (VGS = V) t ON Turn-On Time - - 90 ns t d(on) Turn-On Delay Time - 25 - ns t r Rise Time I D = 40A - 25 - ns t d(off) Turn-Off Delay Time = V, V DD = 40V, R G = 5Ω - 50 - ns t f Fall Time - 26 - ns t OFF Turn-Off Time - - 130 ns Drain-Source Diode Charateristics V SD Source to Drain Diode Voltage I SD = 0A, = 0V - - 1.25 I SD = 40A, = 0V - - 1.0 V t rr Reverse Recovery Time I SD = 40A, di SD /dt = 0A/μs - 42 - ns Q rr Reverse Recovery Charge I SD = 40A, di SD /dt = 0A/μs - 62 - nc FD6M043N0 Rev. A 3 www.fairchildsemi.com
Typical Performance Characteristics Each Switch, Unless Otherwise Specified ID, Drain Current[A] 120 0 40 0 0.0 0.5 1.0 1.5, Drain-Source Voltage[V] VGS G S Figure 3. On-Region Characteristics Top : Bottom :.0 V.0 V 7.0 V 6.0 V 5.0 V *Notes : 1. 250μs Pulse Test 2. T C = 25 o C D VGS,STEP Figure 4. Transfer Characteristics ID FD6M043N0 ID, Drain Current[A] 0 120 90 60 30 G S D ID FD6M043N0 0 o C 25 o C -40 o C *Notes : 1. = V 2. 250μs Pulse Test 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0, Input Voltage[V] IS, Reverse Drain Current [A] Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0 0 o C 25 o C *Notes : 1. = 0V 2. 250μs Pulse Test 1 0.3 0.6 0.9 1.2 V SD, Body Diode Forward Voltage [V] Figure 6. Output Capacitance Characteristics Capacitance [nf] 4 C iss C oss C rss A B B C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd * Notes : 1. = 0 V 2. f = 1 MHz 0 0.1 1, Drain-Source Voltage [V] 75 FD6M043N0 Rev. A 4 www.fairchildsemi.com
Typical Performance Characteristics (Continued) BS, (Normalized) Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature 1.20 1. 1.00 0.90 0.5 * Notes: 1. = 0V 2. I D = 250μA -50 0 50 0 0 200 T J, Junction Temperature [ C] Thermal Response [ZθJC] 1 0.1 0.01 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse R DS(ON), (Normalized) Drain-Source On-Resistance Figure 9. Transient Thermal Response Curve Figure. On-Resistance Variation vs. Temperature 2.5 2.0 1.5 1.0 0.5 0.0 * Notes : 1. = V 2. I D = 40 A -50 0 50 0 0 200 T J, Junction Temperature [ C] *Notes: 1. Z θjc (t) = 3.9 o C/W Typ. 2. Duty Factor, D= t 1 /t 2 3. T JM - T C = P DM * Z θjc (t) 0.001-5 -4-3 -2-1 0 1 2 Rectangular Pulse Duration [sec] P DM t 1 t 2 I D, Drain Current [A] Figure. Maximum Safe Operating Area 200 0 DC Operation in This Area is Limited by R DS(on) ms 1ms 0μs 1 * Notes : 1. T C = 25 o C 2. T J = 0 o C 3. Single Pulse 0.1 0.1 1 0, Drain-Source Voltage [V] I AS, Avalanche Current [A] Figure 11. Unclamped Inductive Switching Capability 400 0 If R = 0 t AV = (L)(I AS )/(1.3*Rated BS - V DD ) If R? 0 t AV = (L/R)ln[(I AS *R)/(1.3*Rated BS - V DD ) + 1] Starting T J = 125 o C Starting T J = 25 o C 1 0.01 0.1 1 0 00 t AV, Time In Avalanche [ms] FD6M043N0 Rev. A 5 www.fairchildsemi.com
AC Test Circuits and Waveforms VGS tp D L G FD6M043N0 S tp IAS IAS V DD Figure 12. Unclamped Inductive Switching Test Circuit and Waveforms 0 tav VDS VDD D R L Figure RG 13. GSwitching Test Waveforms V DD PULSE S FD6M043N0 Figure 13. Switching Test Circuit ton toff td(on) td(off) tr tf 90% 90% % % 90% % 50% PULSE WIDTH 50% Figure 14. Switching Test Waveforms FD6M043N0 Rev. A 6 www.fairchildsemi.com
Application circuits V IN V IN Q 1 Q 2 PWM Controller OPTO Feedback 6 G1 7 G2 S1 1 2 3 4 5 Figure. Application Circuit of Forward Converter with FD6M043N0 C R 6 G1 7 G2 9 Q1 9 Q1 Q2 S1 1 2 3 4 5 Q2 14 13 S2 12 11 14 13 S2 12 LF 11 CF VOUT_FB V OUT FO7 KA431 V OUT LF Figure 16. Application Circuit of Asymmetrical HB Converter with FD6M043N0 V IN LF V OUT Q 1 Q 3 G2 9 CF Q 2 Q 4 6 7 G1 Q2 Q1 S1 1 2 3 4 5 14 13 S2 12 11 VOUT_FB FO7 KA431 LF Figure 17. Application Circuit of Full Bridge Converter with FD6M043N0 FD6M043N0 Rev. A 7 www.fairchildsemi.com
Detailed Package Outline Drawings.70.30 5.35 5. (0.77) MAX 3.07 2.97 2.77 1.27 26.20 25.0 23. 22.90 MAX 0.0 0.70 0.50 14.50 13.50 (R0.50) (R0.55) (R0.55) 2.70 2.30 (0.50) 0.60 0.40 3.4 2. (1.50) 0.70 0.30 (12.00) (6.00) 1.50 17.50 22.6 (R0.50) 2.70 2.30 Figure 1. EPM Package Dimensions in Millimeters FD6M043N0 Rev. A www.fairchildsemi.com
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM PowerTrench Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT - SupreMOS SyncFET The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire μserdes UHC Ultra FRFET UniFET VCX VisualMax * EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed Obsolete First Production Full Production Not In Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 200 Fairchild Semiconductor Corporation www.fairchildsemi.com