PART NUMBERING SYSTEM

Similar documents
List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...

List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...

List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...

1N4741A - 1M200Z Glass Passivated Junction Silicon Zener Diode DO-41

1SMA4741 THRU 1SMA4764

List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...

List... Package outline... Features Mechanical data Maximum ratings Rating and characteristic curves Pinning information...

List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...

List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...

List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...

List... Package outline... Features Mechanical data... Maximum ratings... Electrical Characteristics... Rating and characteristic curves...

SKFM3020C-D2 THRU SKFM30200C-D2. List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves...

List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics Rating and characteristic curves...

List... Package outline... Features... Mechanical data... Maximum ratings... Electrical characteristics... Rating and characteristic curves...

List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics Rating and characteristic curves...

List Package outline Features Mechanical data Maximum ratings Electrical characteristics... 2

List Package outline Features Mechanical data Maximum ratings Electrical characteristics... 2

TV04A5V0-HF Thru. TV04A441-HF

MBR5H100MFST3G NRVB5H100MFST3G. SWITCHMODE Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere VRRM VRMS VDC IFSM I 2 T. (Note 2) R JL (Note 3) R JA TJ, TSTG SYMBOL

TV06B5V0-HF Thru. TV06B441-HF

CD214A-B220 ~ B260 Schottky Barrier Rectifier Chip Diode

VOLTAGE RANGE 200 Volts CURRENT 8.0 Amperes C J. C Storage Temperature Range

High Performance Schottky Rectifier, 5.5 A

List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...

CD-HD2x(L) Series Surface Mount Schottky Bridge Rectifier Diode

TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER

High Performance Schottky Rectifier, 2 x 3.5 A

High Voltage Surface Mountable Input Rectifier Diode, 8 A

High Performance Schottky Rectifier, 2 x 6 A

BOURNS CD214A-F150-F1600 Rectifier Datasheet

SILICON RECTIFIER. VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNITS VRRM VRMS VDC IFSM

Schottky Rectifier, 5.5 A

SURFACE MOUNT SILICON RECTIFIER. VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere SYMBOL V RRM V RMS V DC I O I R IFSM. I 2 t

List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics... 3~4. Rating and characteristic curves...

List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...

Surface Mount > 400W > 1SMA5.0AT3G Series. Description. Features

High Performance Schottky Rectifier, 2 x 6 A

CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode

Fast Soft Recovery Rectifier Diode, 30 A

ES1A~ES1J SURFACE MOUNT SUPERFAST RECTIFIER FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

CD214A-B220 ~ B260 Schottky Barrier Rectifier Chip Diode

* Low cost * Low leakage * Low forward voltage drop * High current capability DO-15 R2500F R3000F R4000F R5000F VRRM VRMS VDC IFSM. I 2 t 3.

List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics Rating and characteristic curves...

High Voltage, Input Rectifier Diode, 80 A

Schottky Rectifier, 2 x 20 A

High Voltage, Input Rectifier Diode, 80 A

High Voltage Input Rectifier Diode, 60 A

VOLTAGE RANGE 50 to 600 Volts CURRENT 10.0 Amperes. UNITS Maximum Recurrent Peak Reverse Voltage V RRM V RMS V DC I O I FSM. I 2 t 93.

Fast Soft Recovery Rectifier Diode, 60 A

Fast Soft Recovery Rectifier Diode, 30 A

Fast Soft Recovery Rectifier Diode, 60 A

Schottky Rectifier, 2 x 15 A

Fast Soft Recovery Rectifier Diode, 40 A

CD214B Transient Voltage Suppressor Diode Series

High Voltage Input Rectifier Diode, 65 A

Schottky Rectifier, 5.5 A

MJ16018 MJW kv SWITCHMODE Series SEMICONDUCTOR TECHNICAL DATA POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS

High Performance Schottky Rectifier, 2 x 40 A

ATV02W5V0-HF Thru ATV02W191-HF Working Peak Reverse Voltage: Volts Peak Pulse Power:200 Watts RoHS Device Halogen Free

CD214A-B3xR Series Schottky Barrier Rectifier Chip Diode

Schottky Rectifier, 2 x 3.5 A

SURFACE MOUNT SUPER FAST RECTIFIER. VOLTAGE RANGE 50 to 400 Volts CURRENT 0.5 Ampere. 300 Maximum RMS Voltage. 210 Maximum DC Blocking Voltage

SURFACE MOUNT SUPER FAST RECTIFIER SYMBOL SE1 SE2 V RRM V RMS V DC I O C J T J T STG

CD214C Transient Voltage Suppressor Diode Series

Schottky Rectifier, 2 x 40 A

Hyperfast Rectifier, 30 A FRED Pt

VOLTAGE RANGE 50 to 600 Volts CURRENT 16 Amperes VRRM VRMS VDC IFSM. I 2 t A 2 /Sec. RθJC TJ, TSTG SYMBOL V F. trr

SMBJ Transient Voltage Suppressor Diode Series

HDB208LS. SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE 1000 Volts CURRENT 2.0 Ampere DB-LS FEATURES MECHANICAL DATA

MCC MMSZ5221B THRU MMSZ5261B(C) Revision: H 2014/04/30 SOD123 A B. Features. 500 mw Zener Diodes 2.4 to 47 Volts

Schottky Rectifier, 10 A

Parameter Symbol Value Unit

TSCDB52 TSCDB54 TSCDB56 TSCDB510

RC205 SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER. VOLTAGE 600 Volts CURRENT 2.0 Amperes RC-2

Hyperfast Rectifier, 15 A FRED Pt

HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes I O I 2 T R θ JL R θ JA C J T J T STG

VOLTAGE RANGE 50 to 600 Volts CURRENT 3.0 Amperes. UNITS Maximum Recurrent Peak Reverse Voltage SYMBOL V RRM V RMS V DC I O I FSM.

ATV02W5V0-HF Thru ATV02W191-HF Working Peak Reverse Voltage: Volts Peak Pulse Power:200 Watts RoHS Device Halogen Free

TV02W5V0-G Thru. TV02W191-G Working Peak Reverse Voltage: Volts Peak Pulse Power:200 Watts RoHS Device

High Performance Schottky Rectifier, 65 A

TV02W5V0-HF Thru TV02W191-HF Working Peak Reverse Voltage: Volts Peak Pulse Power:200 Watts RoHS Device Halogen Free

General Purpose Plastic Rectifier

HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes SYMBOL V RRM V RMS V DC HER201 I O I 2 T C J T J

Pb-Free Thick Film Chip Resistors

HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes I O I 2 T R JC 15 C J Operating Temperature Range T J

30KP SERIES. Features. Mechanical Data. Maximum Ratings and Electrical A =25 C unless otherwise specified

SMBJ Transient Voltage Suppressor Diode Series

Schottky Rectifier, 2 x 20 A

2.0A Low Profile Chip Schottky Rectifier TSCDA24LH. Features. Application. Mechanical Data

MURA215T3G SURA8215T3G MURA220T3G SURA8220T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 2 AMPERES, VOLTS

ATV66SM836A-G. SMD Transient Voltage Suppressor. Working Voltage: 36 Volts Peak Pulse Power: 6600 Watts RoHS Device. Features.

High Voltage Input Rectifier Diode, 60 A

1A Sintered Glass Passivated Ultra Fast Rectifier (SGP ) TCDU1WW. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)

Thyristor High Voltage, Phase Control SCR, 30 A

Ultrafast Soft Recovery Diode, 30 A FRED Pt Gen 4

MURA105, SURA8105, MURA110, SURA8110. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS

Fast Soft Recovery Rectifier Diode, 60 A

SMCJ Transient Voltage Suppressor Diode Series

SURFACE MOUNT FAST RECOVERY RECTIFIER SYMBOL V RRM V RMS V DC I O I FSM T J, T STG SYMBOL. Maximum Instantaneous Forward Voltage at 1.

Transcription:

FETURES VOLTGE: 2 TO VOLTS, URRENT:. & 2. MPERE FLT PK - LOW PROFILE, FOR SURFE MOUNPPLITIONS FST RESPONSE ND LOW FORWRD VOLTGE HIGH TEMPERTURE SOLDERING (25 O / SEONDS) ESY PIK ND PLE THODE RHS mpliant includes all hmgeneus materials *See Part Number System fr Details.25~.45 2.54~2.79 3.99~4.5 4.93~5.28.98~2.29.8~.3.7~.27.~.2 Dimensins (millimeters) MEHNIL DT: SIZE: SM/DO-24 SE: Mlded epxy TERMINLS: Slder plated pper ally POLRITY: Indicated by cathde band STNDRD PKGING: 2mm tape (EI-RS-48) WEIGHT:.4 gram PRT NUMBERING SYSTEM NSD 4 TR 5K F RHS mpliant qty: (5K & 7.5K) Tape and Vltage & urrent Designatr (See ratings tables) Series MXIMUM RTINGS (t T=25 unless therwise nted) Ratings l NSD2 NSD3 NSD4 NSD5 NSD NSD8 NSD9 NSD UNITS Maximum Recurrent Peak Reverse Vltage VRRM 2 3 4 5 8 9 Vlts Maximum RMS Vltage VRMS 4 2 28 35 42 5 4 7 Vlts Maximum D Blcking Vltage VD 2 3 4 5 8 9 Vlts Maximum verage Frward Rectifi ed urrent I. mps Peak Frward Surge urrent 8.3ms single half sine-wave supreimpsed n rated lad (JEDE methd) IFSM 3 mps Maximum Thermal Resistance (Nte 2) RqJL 25 /W Typical Junctin apacitance (Nte ) J 8 7 pf Operating and Strage Temperature Range TJ, TSTG -55 ~ +5 Typical Reverse Recvery Time TRR 5 ns ELETRIL HRTERISTIS (t T=25 unless therwise nted) haracteristics l NSD2 NSD3 NSD4 NSD5 NSD NSD8 NSD9 NSD UNITS Maximum Frward Vltage at. D VF.5.5.85 Vlts Maximum D Reverse urrent at @T=25.5 mmps Rated D Blcking Vltage (Nte 3) @T=. mmps NOTES:. Measured at.mhz and applied average vltage f 4.VD. 2. Thermal resistance junctin t terminal, 5mm 2 (.3 mm Thick) cpper land patterns. 3. Pulse width 3uS, 2% duty cycle. NI OMPONENTS www.niccmp.cm www.lwesr.cm www.rfpassives.cm

RTING ND HRTERISTI URVES (NSD2 THRU NSD) VERGE FORWRD RETIFIED URRENT, ()..8. FIG. - FORWRD URRENT DERTING URVE NSD2~4 MBIENT TEMPERTURE, ( O ) NSD5,.4 Single Phase Half Wave Hz.2 Resistive r Inductive Lad 25 5 75 25 5 75 PEK FORWRD SURGE UR- RENT, () 5 4 3 2 FIG. 2 - MXIMUM NON-REPETITIVE FOR- WRD SURGE URRENT 8.3ms Single Half Sine-Wave (JEDE Methd) TJ=25 O 2 4 8 2 4 NUMBER OF YLES T Hz 8 2 NI OMPONENTS www.niccmp.cm www.lwesr.cm www.rfpassives.cm

MXIMUM RTINGS (t T=25 unless therwise nted) Ratings Maximum Recurrent Peak Reverse Vltage Maximum RMS Vltage Maximum D Blcking Vltage Maximum verage Frward Rectified urrent Peak Frward Surge urrent 8.3 ms single half sine-wave superimpsed n rated lad (JEDE methd) Typical Thermal Resistance Typical Junctin apacitance (Nte ) Operating and Strage Temperature Range l NSD2 2 NSD2 3 NSD2 4 NSD2 5 NSD2 VRR M 2 3 4 5 VRM S 4 2 28 35 42 VD 2 3 4 5 l 2. mp s IFSM 5 mp s Rt h-j 75. / W Rth-JL 7. J 22 8 pf TJ/TST G -5 t +25/-5 t +5-5 t +5 ELETRIL HRTERISTIS (t T=25 unless therwise nted) haracteristics Maximum Frward Vltage at 2. D NOTE:. Measured at. MHz and applied average vltage f 4.VD. l NSD2 2 NSD2 3 NSD2 4 NSD2 5 NSD2 VF.5.7 Maximum D Reverse urrent at @T=25.5 mmp s Rated D Blcking Vltage @ T= 2.. mmp s verage Frward urrent mperes 2..5..5 Fig. - Derated urve fr Output Rectifier urrent NSD22 ~ NSD24 PB Munted n.2x.2 (5.x5.mm) pper Pad reas Resistive r Inductive Lad NSD22 & NSD24 5 7 8 9 2 3 4 5 Lead Temperature, 5 Fig. 2 - Typcial Junctin apacitance NSD22 ~ NSD24 NSD25 ~ NSD2 =25 f=.mhz Vsig=5mV p-p.. Reverse Vltage, Vlts J, apacitnce, pf. Fig. 3 - Typical Reverse urrent haracteristics =25 =75 Peak Frward Surge urrent mperes Fig. 4 - Maximum Nn-Repetive Peak Frward Surge urrent 5 4 3 2 8.3ms Single Half Sine-Wave (JEDE Methd) at Rated T L Number f ycles at Hz Fig. 5 - Typical Instantaneus Frward haracteristics =25 =5 Pulse =3µS % Duty ycle =25. =25.. Percentage f Rated Peak Reverse Vltage, %..2.4..8..2.4. Instantanesus Frward Vltage, Vlts NI OMPONENTS www.niccmp.cm www.lwesr.cm www.rfpassives.cm 3

MXIMUM RTINGS (t T=25 unless therwise nted) Ratings l NSD3 2 NSD3 3 NSD3 4 NSD3 5 NSD3 Maximum Recurrent Peak Reverse Vltage Maximum RMS Vltage Maximum D Blcking Vltage Maximum verage Frward Rectified urrent Peak Frward Surge urrent 8.3 ms single half sine-wave superimpsed n rated lad (JEDE methd) Typical Thermal Resistance Typical Junctin apacitance (Nte ) Operating and Strage Temperature Range VRR M 2 3 4 5 VRM S 4 2 28 35 42 VD 2 3 4 5 l 3. mp s IFSM 8 mp s Rt h-j Rth-JL J 55. 7. / W TJ/TST G -55 t +25/-55 t +5-55 t +5 pf ELETRIL HRTERISTIS (t T=25 unless therwise nted) haracteristics Maximum Frward Vltage at 3. D NOTE:. Measured at. MHz and applied average vltage f 4.VD. l NSD3 2 NSD3 3 NSD3 4 NSD3 5 NSD3 VF.5. Maximum D Reverse urrent at @T=25.5 mmp s Rated D Blcking Vltage @ T= 2.. mmp s verage Frward urrent mperes 3. 2.5 2..5..5 Fig. - Derated urve fr Output Rectifier urrent PB Munted n.55 x.55 (4 x 4mm) pper Pad reas Resistive r Inductive Lad NSD35~ NSD3 5 7 8 9 2 3 4 5 Lead Temperature, Peak Frward Surge urrent mperes Fig. 2 - Maximum Nn-Repetive Peak Frward Surge urrent 8 4 2 t Rated T L 8.3ms Single Half Sine-wave (JEDE Methd) Number f ycles at Hz Fig. 3 - Typcial Junctin apacitance NSD35 ~ NSD3 =25 f=.mhz Vsig=5mV p-p.. Reverse Vltage, Vlts Fig. 4 - Typical Instantaneus Frward haracteristics 3. = 25 = 5 Pulse =3µS % Duty ycle = 25 J, apacitnce, pf 2. Fig. 5 - Typical Reverse urrent haracteristics =25 =75 Tanscient Theral Impedance, W Fig. - Maximum Nn-Repetive Peak Frward Surge urrent... t Pulse Duratn, sec. NSD35 ~ NSD3..2.4..8..2.4. Instantanesus Frward Vltage, Vlts.. =25 NSD35 ~ NSD3 Percentage f Rated Peak Reverse Vltage, % 4 NI OMPONENTS www.niccmp.cm www.lwesr.cm www.rfpassives.cm

Surface Munt Dides NRD nd TPING ND MOUNTING SPEIFITIONS P d P B W F E P D D T D W REOMMENDED LND PTTERN REEL QUNTITIES Size Quantity 3 inch (33mm) 5, & 7,5 pcs B D imensins (mm).2-. 8 B.5-2. 2 2.7 max. Item S ymbl S pecificatins (mm) Specificatins (inch) arrier 3.2 max..2 max. arrier Length B 7.8 max..37 max. arrier Depth 4.5 max..77 max. Hle d. 5 ±.. 59 ±.4 Outside Diameter D 78 ± 2. 7. ±.79 Inner Diameter D 5 min..99 min. Feed Hle Diameter D2 3. ±. 5. 52 ±.2 Hle Psitin E.75 ±.. 9 ±.4 Punch Hle Psitin F 5. 5 ±.. 27 ±.4 Punch Hle Pitch P 4. ±.. 57 ±.4 Hle Pitch P 4. ±.. 57 ±.4 Embssment enter P 2. ±.5. 79 ±.2 Overall Tape Thickness T. max..43 max. Tape W 2. ±. 3. 472 ±.2 W 8.4 max..724 max. NOTE: Devices are packed in accrdance with EI standard RS-48- and specifi catins given abve. NI OMPONENTS www.niccmp.cm www.lwesr.cm www.rfpassives.cm 5