AFGHL4T65SPD Field Stop Trench IGBT 4 A, 65 V Description Using the novel field stop 3 rd generation IGBT technology, AFGHL4T65SPD offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 5 V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation. V CES E on V CE(Sat) 65 V.6 mj.85 V Features AECQ Qualified Low Saturation Voltage: V CE(Sat) =.85 V (Typ.) @I C = 4 A % Of The Part Are Dynamically Tested (Note ) Short Circuit Ruggedness > 5 S @ 25 C Maximum Junction Temperature: TJ = 75 C Fast Switching Tight Parameter Distribution Positive Temperature Coefficient for Easy Parallel Operating CoPacked With Soft And Fast Recovery Diode G C E Typical Applications Onboard Charger Air Conditioner Compressor PTC Heater Motor Drivers Other Automotive PowerTrain Applications TO2473L CASE 34CX MARKING DIAGRAM &Y&Z&3&K AFGHL 4T65SPD $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3Digit Data code &K = 2Digit Lot Traceability code AFGHL4T65SPD = Specific Device Code ORDERING INFORMATION Device Package Shipping AFGHL4T65SPD TO2473L 3 Units / Rail Semiconductor Components Industries, LLC, 27 August, 28 Rev. Publication Order Number: AFGHL4T65SPD/D
AFGHL4T65SPD ABSOLUTE MAXIMUM RATINGS ( = 25 C, Unless otherwise noted) Symbol Description Ratings Units V CES Collector to Emitter Voltage 65 V V GES Gate to Emitter Voltage ±2 V Transient Gate to Emitter Voltage ±3 V I C Collector Current @ = 25 C 8 A Collector Current @ = C 4 I CM Pulsed Collector Current (Note 2) 2 A I F Diode Forward Current @ = 25 C 4 A Diode Forward Current @ = C 2 I FM Pulsed Diode Maximum Forward Current (Note 2) 2 A P D Maximum Power Dissipation @ = 25 C 267 W Maximum Power Dissipation @ = C 34 SCWT Short Circuit Withstand Time @ = 25 C 5 s T J Operating Junction Temperature 55 to +75 C T stg Storage Temperature Range 55 to +75 C T L Maximum Lead Temp. For soldering Purposes, ⅛ from case for 5 seconds 3 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. V CC = 4 V, V GE = 5 V, I C = 2 A, R G = 2, Inductive Load 2. Repetitive rating: pulse width limited by max. Junction temperature THERMAL CHARACTERISTICS Symbol Rating Max. Units R JC Thermal Resistance junction to case, for IGBT.3 C/W R JC Thermal Resistance junction to case, for Diode.9 C/W R JA Thermal Resistance junction to Ambient 4 C/W 2
AFGHL4T65SPD ELECTRICAL CHARACTERISTICS ( = 25 C unless otherwise noted) Parameter Test Conditions Symbol Min. Typ. Max. Unit OFF CHARACTERISTICS Collectoremitter breakdown voltage, gateemitter shortcircuited GE = V, I C = ma BVCES 65 V V Temperature Coefficient of Breakdown Voltage V GE = V, I C = ma.6 V/ C Collectoremitter cutoff current, gateemitter shortcircuited V GE = V, V CE = 65 V V GE = V, V CE = 65 V, T J = 75 C ICES 75 25 A Gate leakage current, collector emitter shortcircuited V GE = 2 V, V CE = V IGES ±4 na ON CHARACTERISTICS Gateemitter threshold voltage V GE = V CE, I C = 4 ma VGE(th) 4. 5. 7.5 V Collectoremitter saturation voltage V GE = 5 V, I C = 4 A V GE = 5 V, I C = 4 A, T J = 75 C VCE(sat) DYNAMIC CHARACTERISTICS Input capacitance Cies 58 Output capacitance V CE = 3 V, V GE = V, f = MHz Coes 9 Reverse transfer capacitance Cres 5 Gate charge total Gate to emitter charge V CE = 4 V, I C = 4 V, V GE = 5 V Qge.4.85 2.5 2.4 Q g 36 Gate to collector charge Qgc 2 SWITCHING CHARACTERISTICS Turnon delay time td(on) 8 Rise time t r 42 Turnoff delay time Fall time Turnon switching loss Turnoff switching loss = 25 C V CC = 4 V, I C = 4 A Rg = 6 V GE = 5 V Inductive Load, = 25 C td(off) t f Eon Eoff 35.6.27 Total switching loss Ets.43 Turnon delay time td(on) 6 Rise time t r 4 Turnoff delay time Fall time Turnon switching loss = 75 C V CC = 4 V, I C = 4 A Rg = 6 V GE = 5 V Inductive Load td(off) t f Eon 37.59 Turnoff switching loss Eoff.42 Total switching loss Ets 2. DIODE CHARACTERISTICS Forward voltage I F = 2 A I F = 2 A, T J = 75 C V F.4 Reverse Recovery Time T J = 25 C trr 35 ns Reverse Recovery Charge IF = 2 A, di F /dt = 2 A/ s Qrr 58 C 2.2.9 2.7 V pf nc ns mj ns mj V 3
AFGHL4T65SPD ELECTRICAL CHARACTERISTICS ( = 25 C unless otherwise noted) Parameter Test Conditions Symbol Min. Typ. Max. Unit DIODE CHARACTERISTICS Reverse Recovery Time trr 24 ns Reverse Recovery Charge T J = 75 C IF = 2 A, di F /dt = 2 A/ s Qrr 776 C Reverse Recovery Energy Erec 5 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4
AFGHL4T65SPD TYPICAL PERFORMANCE CHARACTERISTICS Collector Current, IC [A] 2 9 6 3 2V 5V 2V V V GE = 8V Collector Current, IC [A] 2 9 6 3 2V 5V 2V V V GE = 8V 2 3 4 5 6 CollectorEmitter Voltage, V CE[V] Figure. Typical Output Characteristics 2 3 4 5 6 CollectorEmitter Voltage, V CE[V] Figure 2. Typical Output Characteristics Collector Current, I C [A] 2 9 6 3 V GE = 5V Collector Current, I C [A] 2 9 6 3 V CE = 2V CollectorEmitter Voltage, V CE [V] 2 3 4 5 6 CollectorEmitter Voltage, V CE[V] 5 4 3 2 Figure 3. Typical Saturation Voltage Characteristics V GE = 5V 8A 4A I C = 2A 5 5 5 2 CollectorEmitter Case Temperature, [ o C] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level CollectorEmitter Voltage, V CE [V] 2 4 6 8 2 4 6 GateEmitter Voltage,V GE [V] Figure 4. Transfer Characteristics I C = 2A 8A 4A = 4 o C GateEmitter Voltage, V GE [V] Figure 6. Saturation Voltage vs. V GE 5
AFGHL4T65SPD TYPICAL PERFORMANCE CHARACTERISTICS CollectorEmitter Voltage, V CE [V] 2 6 2 8 4 I C = 2A 4A 8A = 25 o C 4 8 2 6 2 GateEmitter Voltage, V GE [V] Figure 7. Saturation Voltage vs. V GE CollectorEmitter Voltage, VCE [V] 2 6 2 8 4 I C = 2A 4A 8A 4 8 2 6 2 GateEmitter Voltage, V GE [V] Figure 8. Saturation Voltage vs. V GE Capacitance [pf] V GE = V, f = MHz C ies C oes C res GateEmitter Voltage, V GE [V] 5 2 9 6 3 V CC = 2V 4V 3V Collector Current, Ic [A] CollectorEmitter Voltage, V CE [V] 3 Figure 9. Capacitance Characteristics *Notes:. s ms ms DC s 2. T J = 75 o C 3. Single Pulse. CollectorEmitter Voltage, V CE [V] Figure. SOA Characteristics 3 Collector Current, I C [A] 2 3 4 Gate Charge, Q g [nc] 2 Figure. Gate charge Characteristics Safe Operating Area V GE = 5V, CollectorEmitter Voltage, V CE [V] Figure 2. Turn off Switching SOA Characteristics 6
AFGHL4T65SPD TYPICAL PERFORMANCE CHARACTERISTICS Switching Time [ns] 2 t r t d(on) V CC = 4V, V GE = 5V I C = 4A 2 3 4 5 Gate Resistance, R G [ ] Figure 3. Turnon Characteristics vs. Gate Resistance Switching Time [ns] 2 V GE = 5V, R G = 6 = 25 o C t r t d(on) Switching Time [ns] Switching Time [ns] V CC = 4V, V GE = 5V I C = 4A t d(off) 2 3 4 5 Gate Resistance, R G [ ] Figure 4. Turnon Characteristics vs. Gate Resistance V GE = 5V, R G = 6 = 75 o C t f t f t d(off) 5 2 4 6 8 Collector Current, I C [A] Figure 5. Turnon Characteristics vs. Collector Current 2 4 6 8 Collector Current, I C [A] Figure 6. Turnoff Characteristics vs. Collector Current Switching Loss [mj] 2 V CC = 4V, V GE = 5V I C = 4A = 25 o C E on E off Switching Loss [mj] 2 V GE = 5V, R G = 6 = 75 o C E on E off 2 3 4 5 Gate Resistance, R G [ ] 3 6 Collector Current, I C [A] Figure 7. Switching Loss vs Gate Resistance Figure 8. Switching Loss vs Collector Current 7
AFGHL4T65SPD TYPICAL PERFORMANCE CHARACTERISTICS 2 Forward Current, I F [A] T J = 25 o C T J = 75 o C T J = 75 o C = 75 o C = 25 o C Reverse Current, IR [ A]. = 25 o C T J = 25 o C 2345 Forward Voltage, V F [V] Figure 9. Forward Characteristics. 5 2 4 6 65 Reverse Voltage, V R [V] Figure 2. Reverse Current 8 3 Stored Recovery Charge, Q rr [nc] 6 4 2 di/dt = 2A/ s di/dt = A/ s Reverse Recovery Time, t rr [ns] 25 2 5 5 --- di/dt = 2A/ s di/dt = A/ s 2 3 4 5 Forward Current, F I[A] Figure 2. Stored Charge 2 3 4 5 Forward Current, I F [A] Figure 22. Reverse Recovery Time 8 Reverse Recovery Currnet, rr I [A] 6 4 2 di/dt = 2A/ s di/dt = A/ s di/dt = 2A/ s di/dt = A/ s 2 3 4 Forward Current, F I[A] Figure 23. Reverse Recovery Current 8
AFGHL4T65SPD TYPICAL PERFORMANCE CHARACTERISTICS Thermal Response [Zthjc]...5.2.... Single Pulse E3 5 4 3 2 2 Rectangular Pulse Duration [sec] Figure 24. Transient Thermal Impedance of IGBT Thermal Response [Zthjc]...5.2.... Single Pulse E3 5 4 3 2 2 Figure 25. Transient Thermal Impedance of Diode 9
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