SP1212 12A Discrete Unidirectional TVS Diode RoHS Pb GREEN Description The SP1212 unidirectional TVS is fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge protection level for electronic equipment. The SP1212 TVS can safely absorb repetitive ESD strikes of ±3 kv (contact and air discharge as defined in IEC 61-4-2 without any performance degradation. Additionally, each TVS can safely dissipate a 12A 8/2 surge event as defined in IEC 61-4-5 2 nd Edition. Pinout and Functional Block Diagram PIN1 Features ESD, IEC 61-4-2, ±3kV contact, ±3kV air EFT, IEC 61-4-4, 4A (5/5ns Lightning, 12A (8/2 as defined in IEC 61-4-5 2 nd edition AEC-Q11 qualified Lead free and RoHS compliant Moisture Sensitivity Level(MSL -1 PIN2 Applications Switches / Buttons Test Equipment / Instrumentation Point-of-Sale Terminals Medical Equipment Notebooks / Desktops / Servers Computer Peripherals Battery Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated.
Absolute Maximum Ratings Symbol Parameter Value Units P pk Peak Pulse Power (t p =8/2μs 25 W T OP Operating Temperature -4 to 125 C T STOR Storage Temperature -55 to 15 C Notes: CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T OP =25ºC Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM I R =1μA 5. V Breakdown Voltage V BR I R =1mA 7. V Reverse Leakage Current I LEAK V R =5V.1.5 μa Clamp Voltage 1 V C I PP =1A, t p =8/2µs 7.5 V I PP =12A, t P =8/2μs 9.7 V Dynamic Resistance 2 R DYN TLP, t P =1ns, I/O to GND.33 Ω Peak Pulse Current I pp t p =8/2µs 12 A ESD Withstand Voltage 1 V ESD IEC 61-4-2 (Contact Discharge ±3 kv IEC 61-4-2 (Air Discharge ±3 kv Diode Capacitance 1 C I/O-GND Reverse Bias=V, f=1mhz 29 pf Note: 1. Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP with 1ns width, 2ns rise time, and average window t1=7ns to t2= 9ns 8/2μs Pulse Waveform Clamping Voltage vs I PP for 8/2μs Waveshape 11% 1% 9% 12 1 Percent of I PP 8% 7% 6% 5% 4% 3% 2% Clamp Voltage (VC 8 6 4 2 1% %. 5. 1. 15. 2. 25. 3. Time (μs 2 4 6 8 1 12 Peak Pulse Current-I PP (A
Capacitance vs. Bias 3 Capacitance (pf 2 1 1 2 3 4 5 Bias Voltage (V Positive Transmission Line Pulsing (TLP Plot Negative Transmission Line Pulsing (TLP Plot 4 35-5 TLP Current (A 3 25 2 15 1 5 TLP Current (A -1-15 -2-25 -3-35 2 4 6 8 1 12 14 16 18 2 TLP Voltage (V -4-12 -1-8 -6-4 -2 TLP Voltage (V IEC61-4-2 +8 kv Contact ESD Clamping Voltage IEC61-4-2-8 kv Contact ESD Clamping Voltage
Temperature TVS Diode Arrays (SPA Diodes Soldering Parameters Reflow Condition Pre Heat - Temperature Min (T s(min 15 C - Temperature Max (T s(max 2 C Pb Free assembly - Time (min to max (t s 6 18 secs Average ramp up rate (Liquidus Temp (T L to peak 3 C/second max T P T L T S(max Preheat Ramp-up t P t L Critical Zone TL to TP Ramp-down T S(max to T L - Ramp-up Rate Reflow - Temperature (T L (Liquidus 217 C 3 C/second max - Temperature (t L 6 15 seconds Peak Temperature (T P 26 +/-5 C T S(min 25 t S time to peak temperature Time Time within 5 C of actual peak Temperature (t p 2 4 seconds Ramp-down Rate Time 25 C to peak Temperature (T P 6 C/second max 8 minutes Max. Product Characteristics Do not exceed 26 C Lead Plating Matte Tin Ordering Information Part Number Package Min. Order Qty. E* SP1212-1ETG SOD882 1 Lead Material Substrate Material Body Material Flammability Copper Alloy Silicon Molded Compound UL Recognized compound meeting flammability rating V- E = Part Code Part Marking System * = Date Code F* F = Part Code * = Date Code Part Numbering System TVS Diode Arrays (SPA Diodes Series Number of Channels SP 1212 1 E T G G= Green T= Tape & Reel Package E: SOD882
Package Dimensions SOD882 D e Package SOD882 E L2 Symbol JEDEC Millimeters MO-236 Inches h Min Typ Max Min Typ Max PIN1 Top View L1 Bottom View Package outline 1 A.5.55.6.2.22.24 A1..2.5..1.2 L1.2.25.3.8.1.12 L2.45.5.55.18.2.22 A1 A.65mm D.9 1. 1.1.35.39.43 E.5.6.7.2.24.28 Side View.4mm.3mm 1.1mm Recommended soldering pad layout e.65 BSC.26 BSC h.125 ( x 45.5 ( x 45 Drawing# : E1-A Embossed Carrier Tape & Reel Specification SOD882 T P P2 Φ2: 1.55±.5 Tape Dimensions Top Cover Tape 3 REF W A E F Millimetres Symbol Min Max A.65.75 B 1.1 1.2 B K.5.6 K P1 Φ:.4±.5 E 1.65 1.85 F 3.45 3.55 Device OrientationinTape W1 S P 3.9 4.1 P1 1.9 2.1 P2 1.95 2.5 R M N K T 1.95 2.5 W 7.9 8.1 Pin1 Location H W 8mm TAPE AND REEL ComponentOrientationinTape Pin1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.