NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications Load Switch Low Current Inverter and DC DC Converters Power Switch for Printers, Communication Equipment MAXIMUM RATINGS (T J = 5 C unless otherwise noted) Parameter Symbol Value Unit Drain to Source Voltage V DSS V Gate to Source Voltage V GS ±1 V Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State T A = 5 C 1. T A = 5 C I D. t 5 s T A = 5 C 1. Steady.9 State T A = 5 C P D t 5 s.5 Pulsed Drain Current t p = s I DM 5. A Operating Junction and Storage Temperature T J, T stg A W 55 to 15 C Source Current (Body Diode) I S 1. A Lead Temperature for Soldering Purposes (1/ from case for s) T L C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction to Ambient Steady State (Note 1) R JA 5 C/W Junction to Ambient t 5 s (Note 1) R JA 1. Surface mounted on FR board using 1 in sq pad size (Cu area = 7 in sq [ oz] including traces) V (BR)DSS V 1 G SC 7/SOT CASE 19 STYLE R DS(on) MAX 15 m @ V m @.5 V S Device Package Shipping NTS17PT1G SC 7/SOT ( LEADS) m @.5 V D ORDERING INFORMATION I D MAX 1. A MARKING DIAGRAM/ PIN ASSIGNMENT 1 Gate TG = Specific Device Code M = Date Code* = Pb Free Package (Note: Microdot may be in either location) SC 7 (Pb Free) TGM 1. A.9 A Drain Source /Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD11/D. * Date code orientation may vary depending upon manufacturing location Semiconductor Components Industries, LLC, September, Rev. 1 Publication Order Number: NTS17P/D
NTS17P MOSFET ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain to Source Breakdown Voltage V (BR)DSS V GS = V, I D = 5 A V Zero Gate Voltage Drain Current I DSS V GS = V, V DS = V, T J = 5 C V GS = V, V DS = V, T J = 5 C Gate to Source Leakage Current I GSS V DS = V, V GS = 1 V ±.1 A ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) V GS = V DS, I D = 5 A.7 5 1.5 V Drain to Source On Resistance R DS(on) V GS = V, I D = 1. A 9 15 m 1. 5. V GS =.5 V, I D = 1. A 1 V GS =.5 V, I D =.9 A 15 Forward Transconductance g FS V DS = 5 V, I D = 1. A. S Input Capacitance C iss CHARGES, CAPACITANCES AND GATE RESISTANCE pf Output Capacitance C oss V GS = V, f = 1. MHz, V DS = 15 V 55 Reverse Transfer Capacitance C rss Total Gate Charge Q G(TOT) Threshold Gate Charge Q G(TH) V GS =.5 V, V DS = 15 V,. Gate to Source Charge Q GS I D = 1. A Gate to Drain Charge Q GD 1.5 Total Gate Charge Q G(TOT) Threshold Gate Charge Q G(TH) V GS = V, V DS = 15 V,. Gate to Source Charge Q GS I D = 1. A Gate to Drain Charge Q GD 1.5 SWITCHING CHARACTERISTICS (Note ) Turn On Delay Time t d(on) Rise Time t r V GS =.5 V, V DS = 15 V, 5. Turn Off Delay Time t d(off) I D = 1. A, R G = 1. Fall Time t f.7 Turn On Delay Time t d(on) Rise Time t r V GS = V, V DS = 15 V,.7 Turn Off Delay Time t d(off) I D = 1. A, R G = 19.9 Fall Time t f 7.1 A. nc.1 nc 7.7 ns 5. ns DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V SD V GS = V, I S = 1. A. 1. V Reverse Recovery Time t RR Charge Time t a V DS = V, V GS = V, I S = 1. A, Discharge Time t b di SD /d t = A/ s. 1 ns Reverse Recovery Charge Q RR 7. nc. Surface mounted on FR board using 1 in sq pad size (Cu area = 7 in sq [ oz] including traces). Pulse Test: Pulse Width s, Duty Cycle %. Switching characteristics are independent of operating junction temperatures
NTS17P TYPICAL CHARACTERISTICS 5..5..5..5. 1.5 1..5.5 V.5 V. V 1. 1.5 T J = 5 C.. V. V. V. V 1. V.5. 5. V DS V... T J = 15 C 1. T J = 5 C T J = 55 C 1. 1.5 1.5 1.75..5.5.75. V GS, GATE TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics Figure. Transfer Characteristics R DS(on), DRAIN TO SOURCE RESISTANCE ( )..5..15..5 5 T J = 5 C I D = 1. A 7 9 V GS, GATE TO SOURCE VOLTAGE (V) R DS(on), DRAIN TO SOURCE RESISTANCE ( )..5..15. V GS =. V V GS =.5 V V GS =.5 V V GS = V.5..5 1. 1.5. T J = 5 C.5..5..5 5. Figure. On Resistance vs. Gate Voltage Figure. On Resistance vs. Drain Current and Gate Voltage R DS(on), DRAIN TO SOURCE RESISTANCE (NORMALIZED) 1. 1.5 1. 1. 1. 1..9..7. 5 V GS = V I D = 1. A 5 5 5 75 T J, JUNCTION TEMPERATURE ( C) Figure 5. On Resistance Variation with Temperature 15 I DSS, LEAKAGE (na) T J = 15 C T J = 15 C T J = 5 C 1 15 5 15 5 Figure. Drain to Source Leakage Current vs. Voltage
C, CAPACITANCE (pf) t, TIME (ns) 5 C iss C rss C oss 5 V GS =.5 V V DD = 15 V I D = 1. A 15 Figure 7. Capacitance Variation NTS17P TYPICAL CHARACTERISTICS V GS = V T J = 5 C f = 1 MHz 5 t d(off) t f t r t d(on) V GS, GATE TO SOURCE VOLTAGE (V) 1 I S, SOURCE CURRENT (A) Q gs 1. V DS Q gd QT Q G, TOTAL GATE CHARGE (nc) Figure. Gate to Source Voltage vs. Total Charge T J = 15 C 15 C V GS V DS = 15 V I D = 1. A T J = 5 C 5 C T J = 55 C 1 1 1 1. 1. R G, GATE RESISTANCE ( ) Figure 9. Resistive Switching Time Variation vs. Gate Resistance.1...5..7..9 1. 1. V SD, SOURCE TO DRAIN VOLTAGE (V) Figure. Diode Forward Voltage vs. Current V GS(th), GATE TO SOURCE VOLTAGE (V) 1. 1. 1. 1..9..7 5 I D = 5 A 1 1 1 5 5 5 75 15 15.1 T J, JUNCTION TEMPERATURE ( C) POWER (W) 1.1.1.1 1 SINGLE PULSE TIME (s) Figure 11. Threshold Voltage Figure 1. Single Pulse Maximum Power Dissipation
NTS17P TYPICAL PERFORMANCE CURVES 1..1 V GS = 1 V SINGLE PULSE T C = 5 C s s 1 ms ms.1 R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT dc.1 1. Figure 1. Maximum Rated Forward Biased Safe Operating Area R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) 1..1.5..1.5..1 Single Pulse.1.1.1.1.1 1. t, TIME (SECONDS) Figure 1. FET Thermal Response 5
NTS17P PACKAGE DIMENSIONS.5 (.) D e1 H E 1 e A1 E A b A SC 7 (SOT ) CASE 19 ISSUE M L c NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y1.5M, 19.. CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A..9 1...5. A1..5.... A.7 REF. REF b..5..1.1.1 c..1.5..7. D 1....71..7 E 5 1. 1.5.5.9.5 e 1. 1. 1..7.51.55 e1.5 BSC. BSC L.5 REF.17 REF H E....79..95 STYLE : PIN 1. GATE. SOURCE. DRAIN SOLDERING FOOTPRINT*.5.5.5.5.9.5.7. 1.9.75 SCALE :1 mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 51, Denver, Colorado 17 USA Phone: 75 175 or Toll Free USA/Canada Fax: 75 17 or 7 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 955 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 1 79 9 Japan Customer Focus Center Phone: 1 577 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTS17P/D