High oltage Phase Control Thyristor, 2 3L TO-220B PRIMRY CHRCTERISTICS I T() 8 DRM / RRM 800 TM.2 I GT 5 m T J -40 C to 25 C Package Circuit configuration 2 () (K) (G) 3 3L TO-220B Single SCR FETURES Designed and qualified according to JEDEC -JESD 47 25 C max. operating junction temperature Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PPLICTIONS Typical usage is in input rectification crowbar (soft start) and C switch in motor control, UPS, welding, and battery charge. DESCRIPTION The S-2TTS08... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 25 C junction temperature. OUTPUT CURRENT IN TYPICL PPLICTIONS PPLICTIONS SINGLE-PHSE BRIDGE THREE-PHSE BRIDGE UNITS Capacitive input filter T = 55 C,, common heatsink of C/W 3.5 7 MJOR RTINGS ND CHRCTERISTICS PRMETER TEST CONDITIONS LUES UNITS I T() Sinusoidal waveform 8 I T(RMS) 2.5 DRM / RRM 800 I TSM T 8, T J = 25 C.2 d/dt 50 /µs di/dt /µs T J Range -40 to +25 C OLTGE RTINGS PRT NUMBER RRM, MXIMUM PEK OLTGE DRM, MXIMUM PEK DIRECT OLTGE I RRM /I DRM T 25 C m 800 800.0 Revision: 2-ug-7 Document Number: 96286 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?90
BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS LUES UNITS Maximum average on-state current I T() 8 T C = 08 C, 80 conduction, half sine wave Maximum RMS on-state current I T(RMS) 2.5 Maximum peak, one-cycle, 0 ms sine pulse, rated RRM applied, 95 I non-repetitive surge current TSM 0 ms sine pulse, no voltage reapplied, 0 ms sine pulse, rated RRM applied, 45 Maximum I 2 t for fusing I 2 t 0 ms sine pulse, no voltage reapplied, 64 2 s Maximum I 2 t for fusing I 2 t t = 0. ms to 0 ms, no voltage reapplied, 640 2 s Maximum on-state voltage drop TM 8, T J = 25 C.2 On-state slope resistance r t 6.2 m Threshold voltage T(TO) 0.87 Maximum reverse and direct leakage current T J = 25 C 0.05 I RM /I DM R = Rated RRM / DRM.0 node supply = 6, resistive load, initial I m Typical holding current I T =, H 30 T J = 25 C Maximum latching current I L node supply = 6, resistive load, T J = 25 C 50 Maximum rate of rise of off-state voltage d/dt T J = T J max., linear to 80 C, DRM = R g - k = Open 50 /μs Maximum rate of rise of turned-on current di/dt /μs TRIGGERING PRMETER SYMBOL TEST CONDITIONS LUES UNITS Maximum peak gate power P GM 8.0 Maximum average gate power P G() 2.0 W Maximum peak positive gate current + I GM.5 Maximum peak negative gate voltage - GM 0 Maximum required DC gate current to trigger node supply = 6, resistive load, T J = 25 C 5 m node supply = 6, resistive load, T J = - 65 C 20 node supply = 6, resistive load, 0 Maximum required DC gate voltage to trigger GT node supply = 6, resistive load, T J = 25 C node supply = 6, resistive load, 0.7 node supply = 6, resistive load, T J = - 65 C.2 Maximum DC gate voltage not to trigger GD 0.2, DRM = Rated value Maximum DC gate current not to trigger I GD 0. m SWITCHING PRMETER SYMBOL TEST CONDITIONS LUES UNITS Typical turn-on time t gt T J = 25 C 0.8 Typical reverse recovery time t rr 3 μs Typical turn-off time t q Revision: 2-ug-7 2 Document Number: 96286 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?90
THERML ND MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS LUES UNITS Maximum junction and storage temperature range T J, T Stg -40 to 25 C Maximum thermal resistance, junction to case R thjc DC operation.5 Maximum thermal resistance, junction to ambient R thj 62 C/W Typical thermal resistance, case to heatsink R thcs Mounting surface, smooth and greased 0.5 pproximate weight 2 g 0.07 oz. minimum 6 (5) kgf cm Mounting torque maximum 2 (0) (lbf in) Marking device Case style 3L TO-220B 2TTS08 Maximum llowable CaseTemperature ( C) 25 R thjc (DC) =.5 K/W 20 5 Conduction ngle 05 80 0 2 4 6 8 0 verage On-State Current () Maximum verage On-State Power Loss (W) 0 9 8 7 6 5 4 3 2 80 RMS Limit Conduction ngle 0 0 2 3 4 5 6 7 8 9 verage On-State Current () Fig. - Current Ratings Characteristics Fig. 3 - On-State Power Loss Characteristics Maximum llowable CaseTemperature ( C) 25 20 5 05 R thjc (DC) =.5 K/W Conduction Period 80 DC 0 2 4 6 8 0 2 4 verage On-State Current () Maximum verage On-State Power Loss (W) 4 2 0 8 6 4 2 DC 80 RMS Limit Conduction Period 0 0 2 4 6 8 0 2 4 verage On-State Current () Fig. 2 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics Revision: 2-ug-7 3 Document Number: 96286 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?90
Peak Half Sine Wave Forward Current () 90 80 70 60 50 t any rated load condition and with rated rrm applied following surge. Initial T J = 50 C at 60 Hz 0.0083 s at 50 Hz 0.0 s 40 0 Number of Equal mplitude Half Cycle Current Pulses (N) Peak Half Sine Wave Forward Current () 20 90 80 70 60 50 Maximum non-repetitive surge current vs. pulse train duration. Initial T J = T J max. No voltage reapplied Rated rrm reapplied 40 0.0 0. 0 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-State Current () 0 T J = 25 C 0 0.5.5 2 2.5 3 3.5 Instantaneous On-State oltage () Fig. 7 - On-State oltage Drop Characteristics Z thjc - Transient Thermal Impedance ( C/W) 0 0. D = 0.50 D = 0.33 D = 0.25 D = 0.7 D = 0.08 Single Pulse 0.0 0.000 0.00 0.0 0. Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristics Steady state value (DC operation) Revision: 2-ug-7 4 Document Number: 96286 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?90
ORDERING INFORMTION TBLE Device code S- 2 T T S 08 -M3 2 3 4 5 6 7 - product 2 - Current ratings (2 = 2.5 ) 3 - Circuit configuration: T = single thyristor 4 - Package: 5 - T = TO-220 Type of silicon S = standard recovery rectifier 6 - oltage rating (08 = 800 ) 7 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION 50 0 ntistatic plastic tubes Dimensions Part marking information LINKS TO RELTED DOCUMENTS www.vishay.com/doc?9654 www.vishay.com/doc?95028 Revision: 2-ug-7 5 Document Number: 96286 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?90
DIMENSIONS in millimeters and inches 3L TO-220B Outline Dimensions Q (6) E Ø P 0.04 M B M (6) H (7) B (H) (E) Thermal pad 2 3 D D C C L (2) (6) D c D2 (6) D 3 x b 3 x b2 Detail B 2 Detail B L C E (6) Base metal (b, b2) Plating 0.05 M B M 2 x e e iew - c c (4) (4) b, b3 Section C - C and D - D Lead tip Conforms to JEDEC outline TO-220B SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.25 4.65 0.67 0.83 D2.68 2.88 0.460 0.507 6.4.40 0.045 0.055 E 0. 0.5 0.398 0.44 3, 6 2 2.50 2.92 0.098 0.5 E 6.86 8.89 0.270 0.350 6 b 0.69.0 0.027 0.040 e 2.4 2.67 0.095 0.05 b 0.38 0.97 0.05 0.038 4 e 4.88 5.28 0.92 0.208 b2.20.73 0.047 0.068 H 6.09 6.48 0.240 0.255 6, 7 b3.4.73 0.045 0.068 4 L 3.52 4.02 0.532 0.552 c 0.36 0.6 0.04 0.024 L 3.32 3.82 0.3 0.50 2 c 0.36 0.56 0.04 0.022 4 Ø P 3.54 3.9 0.39 0.54 D 4.85 5.35 0.585 0.604 3 Q 2.60 3.00 0.02 0.8 D 8.38 9.02 0.330 0.355 Notes () Dimensioning and tolerancing as per SME Y4.5M-994 (2) Lead dimension and finish uncontrolled in L (3) Dimension D, D, and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b, b3, and c apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H, D2, and E (7) Outline conforms to JEDEC TO-220, except D2 (minimum) Revision: 03-ug-7 Document Number: 9654 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?90
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