FDP75N08A 75V N-Channel MOSFET Features 75A, 75V, R DS(on) = 0.011Ω @ = 10 V Low gate charge ( typical 145nC) Low Crss ( typical 86pF) Fast switching Improved dv/dt capability Description July 2006 UniFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G G D S TO-220 FDP Series S Absolute Maximum Ratings Symbol Parameter FDP75N08A Units S Drain-Source Voltage 75 V Drain Current - Continuous (T C = 25 C) 75 A - Continuous (T C = 100 C) 47 A M Drain Current - Pulsed (Note 1) 300 A S Gate-Source Voltage ± 20 V E AS Single Pulsed Avalanche Energy (Note 2) 1738 mj I AR Avalanche Current (Note 1) 75 A E AR Repetitive Avalanche Energy (Note 1) 13.7 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 C) 137 W - Derate above 25 C 1.09 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 C Thermal Characteristics Symbol Parameter FDP75N08A Units R θjc Thermal Resistance, Junction-to-Case 0.91 C/W R θja Thermal Resistance, Junction-to-Ambient 62.5 C/W 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDP75N08A FDP75N08A TO-220 -- -- 50 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, = 250 µa 75 -- -- V BS / T J Breakdown Voltage Temperature Coefficient = 250 µa, Referenced to 25 C -- 0.6 -- V/ C SS Zero Gate Voltage Drain Current = 75 V, = 0 V -- -- 1 µa = 60 V, T C = 125 C -- -- 10 µa I GSSF Gate-Body Leakage Current, Forward = 20 V, = 0 V -- -- 100 na I GSSR Gate-Body Leakage Current, Reverse = -20 V, = 0 V -- -- -100 na On Characteristics (th) Gate Threshold Voltage =, = 250 µa 2.0 -- 4.0 V R DS(on) Static Drain-Source On-Resistance = 10 V, = 37.5 A -- 9.4 11 mω g FS Forward Transconductance = 40 V, = 37.5 A (Note 4) -- 15 -- S Dynamic Characteristics C iss Input Capacitance = 25 V, = 0 V, -- 3437 4468 pf C oss Output Capacitance f = 1.0 MHz -- 738 959 pf C rss Reverse Transfer Capacitance -- 86 129 pf Switching Characteristics t d(on) t r Turn-On Delay Time Turn-On Rise Time V DD = 37.5 V, = 75A, R G = 25 Ω -- -- 43 212 95 434 ns ns t d(off) Turn-Off Delay Time -- 273 556 ns (Note 4, 5) t f Turn-Off Fall Time -- 147 303 ns Q g Total Gate Charge = 60 V, = 75A, -- 80 104 nc Q gs Gate-Source Charge = 10 V -- 20 -- nc Q gd Gate-Drain Charge (Note 4, 5) -- 24 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 75 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 300 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 75 A -- -- 1.4 V t rr Reverse Recovery Time = 0 V, I S = 75 A, -- 62 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) -- 145 -- nc NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 206µH, I AS =75A, V DD = 50V, R G = 25 Ω, Starting T J = 25 C 3. I SD 75A, di/dt 200A/µs, V DD BS, Starting T J = 25 C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature 2 www.fairchildsemi.com
Typical Performance Characteristics Figure 1. On-Region Characteristics 10 2 Top: 15.0V 9.0V 7.5V 7.0V 6.5v 6.0V 5.5V 5.0V Bottom : 4.5V * Note : 1. 250µs Pulse Test 2. T C =25 0 C 10 1 10 0 10 1, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 2. Transfer Characteristics 100 10 150 0 C 25 0 C -55 0 C * Note : 1. =40V 2. 250µs Pulse Test 1 2 4 6 8 10, Gate-Source Voltage [V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.012 R DS(ON) [Ω], Drain-Source On-Resistance 0.011 0.010 0.009 0.008 = 10V = 20V * Note : T J = 25 o C R, Reverse Drain Current [A] 10 2 10 1 150 0 C 25 0 C * Note : 1. =0V 2. 250µs Pulse Test 0.007 0 25 50 75 100 125 150 175 200 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6, Source-Drain Violtage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 6000 C oss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 12 10 = 15V Capacitances [pf] 5000 4000 3000 2000 1000 C iss C rss * Note : 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] 8 6 4 2 = 37.5V = 60V * Note : = 75A 0 10-1 10 0 10 1, Drain-Source Voltage [V] 0 0 10 20 30 40 50 60 70 Q G, Total Gate Charge [nc] 3 www.fairchildsemi.com
Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 * Notes : 1. = 0 V 2. = 250 µa Figure 8. On-Resistance Variation vs. Temperature R DS(ON), (Normalized) Drain-Source On-Resistance 3.0 2.5 2.0 1.5 1.0 0.5 * Notes : 1. = 10 V 2. = 37.5 A 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10 3 100 10 2 10 1 10 0 10-1 Operation in This Area is Limited by R DS(on) 1ms 10ms 100ms DC 100 µs * Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 10 µs 10 0 10 1 10 2, Drain-SourceVoltage[V] 80 60 40 20 0 25 50 75 100 125 150 T C, Case Temperature [ o C] Figure 11. Transient Thermal Response Curve 10 0 D=0.5 Z? JC (t), Thermal Response 10-1 10-2 0.2 0.1 0.05 0.02 0.01 single pulse P DM t 1 t 2 * Notes : 1. Z θjc (t) = 0.91 0 C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θjc (t) 10-5 10-4 10-3 10-2 10-1 10 0 10 1 t 1, Square Wave Pulse Duration [sec] 4 www.fairchildsemi.com
Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com
Mechanical Dimensions TO-220 Dimensions in Millimeters 7 www.fairchildsemi.com
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