APT14BLL(G) APT14SLL(G) V A.14 *G Denotes RoHS Compliant, Pb Free Terminal Finish. Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q g. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS Symbol Parameter S M M P D,T STG T L I AR E AR E AS POWER MOS 7 R Drain-Source Voltage Increased Power Dissipation Easier To Drive Continuous Drain Current @ T C = 2 C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 2 C Linear Derating Factor MOSFET TO-247 or Surface Mount D 3 PAK Package Operating and Storage Junction Temperature Range Lead Temperature:.63" from Case for 1 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 STATIC ELECTRICAL CHARACTERISTICS TO-247 D 3 PAK All Ratings: T C = 2 C unless otherwise specified. APT14BLL-SLL(G) 14 ±3 ±4 43 3.22 - to 1 3 3 13 G Watts W/ C C mj D S Symbol Characteristic / Test Conditions BS Drain-Source Breakdown Voltage ( = V, = 2µA) R DS(on) Drain-Source On-State Resistance 2 ( = 1V, 17.A).14 Ohms SS Zero Gate Voltage Drain Current ( = V, = V) Zero Gate Voltage Drain Current ( = 4V, = V, T C = 12 C) 1 µa I GSS Gate-Source Leakage Current ( = ±3V, = V) ±1 na (th) Gate Threshold Voltage ( =, = 1mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS Symbol Characteristic C iss C oss C rss Q g Q gs Q gd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Test Conditions = V = 2V f= 1 MHz = 1V = 2V = A @ 2 C RESISTIVE SWITCHING =1V =2V = A @ 2 C R G =1.6 INDUCTIVE SWITCHING @ 2 C =333V, = 1V =A, R G = INDUCTIVE SWITCHING @ 12 C =333V, = 1V =A, R G = APT14 APT14 BLL BLL - SLL(G) - 3261 74 pf 72 2 nc 36 11 6 23 ns 3 32 249 4 µj 288 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions I S I SM V SD r Q rr dv / dt Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 ( = V, I S = -A) Reverse Recovery Time (I S = -A, dl S /dt = 1A/µs) Reverse Recovery Charge (I S = -A, dl S /dt = 1A/µs) Peak Diode Recovery dv / dt THERMAL CHARACTERISTICS Symbol Characteristic R JC R JA Junction to Case Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 38 µs, Duty Cycle < 2% 3 See MIL-STD-7 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 1 1 14 1.3 ns µc V/ns 4 Starting T j = +2 C, L = 2.12mH, R G =2, Peak I L = A dv / dt numbers reflect the limitations of the test circuiather than the device itself. I S -A di / dt 7A/µs V R V 1 C 6 Eon includes diode reverse recovery. See figures 18, 2. 8.31 4 C/W..3.2.2.1.9.7. Note:.1.3 t 1..1. SINGLE PULSE t 2 Duty Factor D = t 1/t 2 Peak = P DM x Z JC + T C 1-1 -4 1-3 1-2 1-1 1. RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1 1 &1V APT14 BLL BLL_SLL - SLL(G) 8V 8 RC MODEL Junction temp. ( C) 6 7V Power (watts).119.1f 2 6.V.191.319F Case temperature. ( C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 1 8 2 6V.V V 1 1 2 2 3 FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2 1.1 NORMALIZED TO = 1V @ 17.A 6 1.1 =1V 1. 4 = +12 C 1. =2V 2 = +2 C.9 = - C 1 2 3 4 6 7 8 9.9 1 2 3 4 6, GATE-TO-SOURCE VOLTAGE (VOLTS), DRAIN CURRENT (AMPERES) FIGURE 4, TRANSFER CHARACTERISTICS FIGURE, R DS (ON) vs DRAIN CURRENT 1.1 3 2 2 1 1 1.1 1. 1..9.9 2 7 1 12 1.8 - -2 2 7 1 12 1 T C, CASE TEMPERATURE ( C), JUNCTION TEMPERATURE ( C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 2. 2. I = 17.A D V = 1 1.2 1.1 1. 1..9 1...8.7..6 - -2 2 7 1 12 1 - -2 2 7 1 12 1, JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
14 OPERATION HERE LIMITED BY R DS (ON) 1, APT14 BLL BLL_SLL - SLL(G) Ciss 1µS 1, Coss 1 1mS 1 Crss T C =+2 C =+1 C 1mS SINGLE PULSE 1 1 1 1 1 1 2 3 4 FIGURE 1, MAXIMUM SAFE OPERATING AREA FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 16 14 = A 2 1 12 1 8 6 4 =2V =1V =4V 1 =+1 C =+2 C 2 2 4 6 8 1 1.3..7.9 1.1 1.3 1. Q g, TOTAL GATE CHARGE (nc) V SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 6 7 6 4 4 T = 12 C 3 J L = 1µH 3 2 2 1 1 1 8 T = 12 C J L = 1µH 1 2 3 4 6 1 2 3 4 6 (A) (A) FIGURE 14, DELAY TIMES vs CURRENT FIGURE 1, RISE AND FALL TIMES vs CURRENT T = 12 C J L = 1µH E ON includes diode reverse recovery. 6 4 14 12 1 8 6 I = A D E T = 12 C off J L = 1µH E ON includes diode reverse recovery. 2 4 2 1 2 3 4 6 1 1 2 2 3 4 4 (A) R G, GATE RESISTANCE (Ohms) FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT14 BLL_SLL(G) Gate Voltage 1 % = 12 C 9% Gate Voltage = 12 C 9% Drain Current 9% Drain Voltage % 1 % 1% Drain Current Drain Voltage Switching Energy Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT3DF6 G D.U.T. Figure 2, Inductive Switching Test Circuit TO-247 Package Outline e1 SAC: Tin, Silver, Copper D 3 PAK Package Outline e3 1% Sn Plated.31 (.29) 2.49 (.98) 16.26 (.64) 6.1 (.242) BSC 6.2 (.244) 21.46 (.84) 3.81 (.1) 4. (.177) Max. 3.12 (.123).79 (.31) 2.32 (.8) 1.4 (.) 2.13 (.84) Gate Drain Source 2.9 (.12).4 (.21) BSC 2-Plcs. Dimensions in Millimeters and (Inches)