uly 999 FG64P ual P-Channel, igital FET General escription Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. - V, -.4 A continuous, -. A peak. R S(ON) =. Ω @ V GS = -4. V, R S(ON) =. Ω @ V GS = -.7 V. Very low level gate drive requirements allowing direct operation in V circuits (V GS(th) <. V). Gate-Source Zener for ES ruggedness (>6kV Human Body Model). Compact industry standard SC7-6 surface mount package. SC7-6 SOT- SuperSOT TM -6 SuperSOT TM -8 SO-8 SOT- S G.4 or 4 * 6 or SC7-6 G S or or 6 or 4 or * *The pinouts are symmetrical; pin and 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. Absolute Maximum Ratings T A = unless otherwise noted Symbol Parameter FG64P Units V SS rain-source Voltage - V V GSS Gate-Source Voltage -8 V I rain/output Current - Continuous -.4 A - Pulsed -. P Maximum Power issipation (Note ). W,T STG Operating and Storage Temperature Range - to C ES Electrostatic ischarge Rating MIL-ST-88 Human Body Model ( pf / Ω) THERMAL CHARACTERISTICS 6. kv R θa Thermal Resistance, unction-to-ambient (Note ) 4 C/W FG64P Rev.E
Electrical Characteristics (T A = O C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V GS = V, I = - µa - V BV SS / Breakdown Voltage Temp. Coefficient I = - µa, Referenced to o C - mv / o C I SS Zero Gate Voltage rain Current V S = - V, V GS = V - µa = C - µa I GSS Gate - Body Leakage Current V GS = -8 V, V S = V - na ON CHARACTERISTICS (Note ) V GS(th) Gate Threshold Voltage V S = V GS, I = - µa -.6 -.8 -. V V GS(th) / Gate Threshold Voltage Temp.Coefficient I = - µa, Referenced to o C mv / o C R S(ON) Static rain-source On-Resistance V GS = -4. V, I = -.4 A.8. Ω =..9 V GS = -.7 V, I = -. A.. I (ON) On-State rain Current V GS = -4. V, V S = - V -. A g FS Forward Transconductance V S = - V, I = -.4 A.9 S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = V, V GS = V, 6 pf C oss Output Capacitance f =. MHz 4 pf C rss Reverse Transfer Capacitance pf SWITCHING CHARACTERISTICS (Note ) t (on) Turn - On elay Time V = - V, I = -. A, 7 ns t r Turn - On Rise Time V GS = -4. V, R GEN = 6 Ω 8 6 ns t (off) Turn - Off elay Time 8 ns t f Turn - Off Fall Time 6 ns Q g Total Gate Charge V S = - V, I = -.4 A,.. nc Q gs Gate-Source Charge V GS = -4. V. nc Q gd Gate-rain Charge.9 nc RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Continuous Source Current -. A V S rain-source iode Forward Voltage V GS = V, I S = -. A (Note ) -.8 -. V Notes:. R θa is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θc is guaranteed by design while R θca is determined by the user's board design. R θa = 4 O C/W on minimum pad mounting on FR-4 board in still air.. Pulse Test: Pulse Width < µs, uty Cycle <.%. FG64P Rev.E
S Typical Electrical Characteristics -I, RAIN-SOURCE CURRENT (A)..9.6. V GS =-4.V -.V -.7V -.V -.V 4 -V S, RAIN-SOURCE VOLTAGE (V) -.V R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE.. V GS = -.V -.V -.7V...4.6.8. -I, RAIN CURRENT (A) -.V -.V -4.V Figure. On-Region Characteristics. Figure. On-Resistance Variation with rain Current and Gate Voltage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE.6.4..8 I = -.4A V GS= -4.V.6 - - 7 T, UNCTION TEMPERATURE ( C) R S(ON),ON-RESISTANCE(OHM) 4 4 -V GS, GATE TO SOURCE VOLTAGE (V) I =-.A T = C Figure. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. -I, RAIN CURRENT (A).8.6.4. V = -V S T = - C... -V, GATE TO SOURCE VOLTAGE (V) GS -I, REVERSE RAIN CURRENT (A)... V GS= V T = - C...4.6.8. -V S, BOY IOE FORWAR VOLTAGE (V) Figure. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature. FG64P Rev.E
Typical Electrical Characteristics -V GS, GATE-SOURCE VOLTAGE (V) 4 I = -.4A V = -V S.4.8..6 Q g, GATE CHARGE (nc) -V -V CAPACITANCE (pf) 8 f = MHz V GS = V.. -V S, RAIN TO SOURCE VOLTAGE (V) C iss C oss C rss Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. -I, RAIN CURRENT (A). RS(ON) LIMIT.. V GS = -4.V SINGLE PULSE R θa= 4 C AT A =.... 4 C s s ms - V S, RAIN-SOURCE VOLTAGE (V) ms ms POWER (W) 4.... SINGLE PULSE TIME (SEC) SINGLE PULSE R θa=4 C/W T A= Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE....... =...... Single Pulse..... t, TIME (sec) P(pk) R θa (t) = r(t) * R θa R θa =4 C/W t t - T A = P * R θa (t) uty Cycle, = t / t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note. Transient thermalresponse will change depending on the circuit board design. FG64P Rev.E
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