FCP6N60N / FCPF6N60NT N-Channel MOSFET 600V, 6A, 70Ω Features R DS(on) = 7Ω ( Typ.)@ V GS = 0V, I D = 8A Ultra low gate charge ( Typ. Qg = 40.2nC) Low effective output capacitance 00% avalanche tested RoHS compliant Description August 2009 SupreMOS TM The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G D S TO-220 FCP Series G D S TO-220F FCPF Series G S MOSFET Maximum Ratings T C = 25 o C unless otherwise noted* Symbol Parameter FCP6N60N FCPF6N60NT Units V DSS Drain to Source Voltage 600 V V GSS Gate to Source Voltage ±30 V I D Drain Current Thermal Characteristics -Continuous (T C = 25 o C) 6.0 6.0* -Continuous (T C = 00 o C) * I DM Drain Current - Pulsed (Note ) 48.0 48.0* A E AS Single Pulsed Avalanche Energy (Note 2) 355 mj I AR Avalanche Current 5.3 A E AR Repetitive Avalanche Energy.34 mj dv/dt P D MOSFET dv/dt Ruggedness 00 V/ns Peak Diode Recovery dv/dt (Note 3) 20 V/ns Power Dissipation (T C = 25 o C) 34.4 35.7 W - Derate above 25 o C.08 0.29 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering Purpose, /8 from Case for 5 Seconds 300 o C *Drain current limited by maximum junction temperature Symbol Parameter FCP6N60N FCPF6N60NT Units R θjc Thermal Resistance, Junction to Case 0.93 3.5 R θcs Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5 R θja Thermal Resistance, Junction to Ambient 62.5 62.5 A o C/W 2009 Fairchild Semiconductor Corporation
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCP6N60N FCP6N60N TO-220 - - 50 FCPF6N60NT FCPF6N60NT TO-220F - - 50 Electrical Characteristics T C = 25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = ma, V GS = 0V, T C = 25 o C 600 - - V BV DSS T J I DSS On Characteristics Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Dynamic Characteristics I D = ma, Referenced to 25 o C - 0.73 - V/ o C V DS = 480V, V GS = 0V - - 0 V DS = 480V, V GS = 0V, T C = 25 o C - - 00 I GSS Gate to Body Leakage Current V GS = ±30V, V DS = 0V - - ±00 na V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250µA 2.0-4.0 V R DS(on) Static Drain to Source On Resistance V GS = 0V, I D = 8A - 70 99 Ω g FS Forward Transconductance V DS = 40V, I D = 8A - 3 - S C iss Input Capacitance - 630 270 pf V DS = 00V, V GS = 0V C oss Output Capacitance - 70 95 pf f = MHz C rss Reverse Transfer Capacitance - 5 0 pf C oss Output Capacitance V DS = 380V, V GS = 0V, f = MHz - 40 60 pf C oss eff. Effective Output Capacitance V DS = 0V to 480V, V GS = 0V - 76 - pf Q g(tot) Total Gate Charge at 0V - 40.2 52.3 nc Q gs Gate to Source Gate Charge V DS = 380V, I D = 8A, - 6.7 - nc Q gd Gate to Drain Miller Charge V GS = 0V (Note 4) - 2.9 - nc ESR Equivalent Series Resistance (G-S) Drain Open 2.9 Ω µa Switching Characteristics t d(on) Turn-On Delay Time - 5.8 4.6 ns t r Turn-On Rise Time V DD = 380V, I D = 8A - 5.5 4.0 ns t d(off) Turn-Off Delay Time R G = 4.7Ω - 60.3 30.6 ns t f Turn-Off Fall Time (Note 4) - 20.2 50.4 ns Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - 6 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 48 A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 8A - -.2 V t rr Reverse Recovery Time V GS = 0V, I SD = 8A - 39 - ns Q rr Reverse Recovery Charge di F /dt = 00A/µs - 4.4 - µc Notes:. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I AS = 5.3A, R G = 25Ω, Starting T J = 25 C 3. I SD 6A, di/dt 200A/µs, V DD = 380V, Starting T J = 25 C 4. Essentially Independent of Operating Temperature Typical Characteristics 2
Typical Performance Characteristics ID, Drain Current[A] RDS(ON) [Ω], Drain-Source On-Resistance Figure. On-Region Characteristics 00 0 V GS = 5.0 V 0.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.5 V 4.0 V. 250µs Pulse Test 2. T C = 25 o C 0 20 V DS, Drain-Source Voltage[V] Figure 2. Transfer Characteristics. V DS = 20V 2. 250µs Pulse Test 2 4 6 8 V GS, Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 0.6 0.5 0.4 0.3 0.2 V GS = 0V V GS = 20V T C = 25 o C 0 0 20 30 40 50 I D, Drain Current [A] ID, Drain Current[A] IS, Reverse Drain Current [A] 00 0 00 0 50 o C 50 o C -55 o C 25 o C 25 o C. V GS = 0V 2. 250µs Pulse Test 0.2 0.4 0.6 0.8.0.2.4.6 V SD, Body Diode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics 0000 7500 5000 2500 C oss C iss C rss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd. V GS = 0V 2. f = MHz 0 0 00 600 V DS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 6. Gate Charge Characteristics 0 8 6 4 2 V DS = 20V V DS = 380V V DS = 480V I D = 8A 0 0 0 20 30 40 50 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage ID, Drain Current [A] Figure 7. Breakdown Voltage Variation vs. Temperature.2..0 0.9. V GS = 0V 2. I D = ma 0.8-00 -50 0 50 00 50 200 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area _ FCP6N60N 00 0 Operation in This Area is Limited by R DS(on) 0ms DC. T C = 25 o C ms 00µs 20µs 2. T J = 50 o C 3. Single Pulse 0.0 0 00 000 V DS, Drain-Source Voltage [V] RDS(on), [Normalized] Drain-Source On-Resistance ID, Drain Current [A] Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0.5.0 0.5. V GS = 0V 2. I D = 8A 0.0-00 -50 0 50 00 50 200 T J, Junction Temperature [ o C] Figure 0. Maximum Safe Operating Area _ FCPF6N60NT 00 0 Operation in This Area is Limited by R DS(on) DC ms 0ms. T C = 25 o C 00µs 20µs 2. T J = 50 o C 3. Single Pulse 0.0 0 00 000 V DS, Drain-Source Voltage [V] Figure. Maximum Drain Current vs. Case Temperature 20 ID, Drain Current [A] 5 0 5 0 25 50 75 00 25 50 T C, Case Temperature [ o C] 4
Typical Performance Characteristics (Continued) Thermal Response [ZθJC] Thermal Response [ZθJC] 2 Figure 2. Transient Thermal Response Curve _ FCP6N60N 0.5 0.2 0.05 0.02 0.0. Z θjc (t) = 0.93 o C/W Max. 0.0 Single pulse 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) 0.005 0-5 0-4 0-3 0-2 0 - Rectangular Pulse Duration [sec] 5 Figure 3. Transient Thermal Response Curve _ FCPF6N60NT 0.5 0.2 0.05 0.02 0.0 Single pulse. Z θjc (t) = 3.5 o C/W Max. 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) 0.0 0-5 0-4 0-3 0-2 0-0 0 2 P DM P DM Rectangular Pulse Duration [sec] t t 2 t t 2 5
Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6
Peak Diode Recovery dv/dt Test Circuit & Waveforms D U T + I S D V D S _ L D r i v e r R G S a m e T y p e a s D U T V G S d v / d t c o n t r o l l e d b y R G I S D c o n t r o l l e d b y p u l s e p e r i o d V D D V G S ( D r i v e r ) G a t e P u l s e W i d t h D = - - - - - - - - - - - - - - - - - - - - - - - - - - G a t e P u l s e P e r i o d 0 V I F M, B o d y D i o d e F o r w a r d C u r r e n t I S D ( D U T ) d i / d t I R M B o d y D i o d e R e v e r s e C u r r e n t V D S ( D U T ) B o d y D i o d e R e c o v e r y d v / d t V S D V D D B o d y D i o d e F o r w a r d V o l t a g e D r o p 7
Mechanical Dimensions TO-220 Dimensions in Millimeters 8
Mechanical Dimensions 9.75 ±0.30 5.80 ±0.20 3.30 ±0 TO-220F (7.00) (0.70) (.00x45 ) MAX.47 0.80 ±0 6 ±0.20 ø3.8 ±0 2.54 ±0.20 (30 ) 6.68 ±0.20 5.87 ±0.20 0.35 ±0 # 0.50 +0 0.05 2.76 ±0.20 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 Dimensions in Millimeters 9
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