FDP8443_F85 N-Channel PowerTrench MOSFET 4V, 8A, 3.5mΩ Features Applications Typ r DS(on) =.7mΩ at V GS = V, I D = 8A Automotive Engine Control Typ Q g() = 4nC at V GS = V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Q rr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / Alternator Qualified to AEC Q Distributed Power Architecture and VRMs RoHS Compliant Primary Switch for V Systems March 9 9 Fairchild Semiconductor Corporation
MOSFET Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain to Source Voltage 4 V V GS Gate to Source Voltage ± V I D Continuous (T amb = 5 o C, V GS = V, with R θja = 6 o C/W) Drain Current Continuous (T C < 44 o C, V GS = V) 8 Pulsed See Figure 4 E AS Single Pulse Avalanche Energy (Note ) 53 mj Power Dissipation 88 W P D Derate above 5 o C.5 W/ o C T J, T STG Operating and Storage Temperature -55 to +75 o C Thermal Characteristics R θjc Thermal Resistance Junction to Case.8 o C/W R θja Thermal Resistance Junction to Ambient (Note ) 6 o C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDP8443 FDP8443_F85 TO-AB Tube N/A 5 units Electrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units A Off Characteristics B VDSS Drain to Source Breakdown Voltage I D = 5μA, V GS = V 4 - - V I DSS Zero Gate Voltage Drain Current On Characteristics Dynamic Characteristics V DS = 3V, - - V GS = V T C = 5 o C - - 5 I GSS Gate to Source Leakage Current V GS = ±V - - ± na V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 5μA.8 4 V r DS(on) Drain to Source On Resistance I D = 8A, V GS = V -.7 3.5 I D = 8A, V GS = V, T J = 75 o C - 4.7 6. C iss Input Capacitance - 93 - pf V DS = 5V, V GS = V, C oss Output Capacitance - 8 - pf f = MHz C rss Reverse Transfer Capacitance - 5 - pf R G Gate Resistance V GS =.5V, f = MHz -.9 - Ω Q g(tot) Total Gate Charge at V V GS = to V Q g(th) Threshold Gate Charge V GS = to V V DD = V - 7.5 3 nc Q gs Gate to Source Gate Charge I D = 35A - 36 - nc Q gs Gate Charge Threshold to Plateau I g = ma - 8.8 - nc μa mω - 4 85 nc Q gd Gate to Drain Miller Charge - 3 - nc
Electrical Characteristics T C = 5 o C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics (V GS = V) t on Turn-On Time - - 58 ns t d(on) Turn-On Delay Time - 8.4 - ns V DD = V, I D = 35A t r Rise Time - 7.9 - ns V GS = V, R GS = Ω t d(off) Turn-Off Delay Time - 55 - ns t f Fall Time - 3.5 - ns t off Turn-Off Time - - 9 ns Drain-Source Diode Characteristics I SD = 35A -.8.5 V SD Source to Drain Diode Voltage V I SD = 5A -.8. t rr Reverse Recovery Time - 4 55 ns I SD = 35A, di SD /dt = A/μs Q rr Reverse Recovery Charge - 48 6 nc Notes: : Starting T J = 5 o C, L =.6mH, I AS = 64A. : Pulse width = s. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9 and QS9 quality systems certification. 3
Typical Characteristics POWER DISSIPATION MULTIPLIER...8.6.4.. 5 5 75 5 5 75 T C, CASE TEMPERATURE( o C) Figure. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, Z θjc.. DUTY CYCLE - DESCENDING ORDER D =.5...5.. SINGLE PULSE 5 5 75 5 5 75 T C, CASE TEMPERATURE( o C) Figure. Maximum Continuous Drain Current vs Case Temperature E-3-5 -4-3 - - t, RECTANGULAR PULSE DURATION(s) Figure 3. Normalized Maximum Transient Thermal Impedance 6 8 4 CURRENT LIMITED BY PACKAGE P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T C V GS = V IDM, PEAK CURRENT (A) 5 V GS = V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION T C = 5 o C FOR TEMPERATURES ABOVE 5 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 75 - T C 5 SINGLE PULSE -5-4 -3 - - t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability 4
Typical Characteristics LIMITED BY PACKAGE OPERATION IN THIS AREA MAY BE LIMITED BY rds(on) SINGLE PULSE TJ = MAX RATED TC = 5 o C us. V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 6 8 4 PULSE DURATION = 8μs DUTY CYCLE =.5% MAX V DD = 5V T J = -55 o C T J = 75 o C T J = 5 o C Figure 7. Transfer Characteristics us ms ms DC..5 3. 3.5 4. 4.5 5. V GS, GATE TO SOURCE VOLTAGE (V) IAS, AVALANCHE CURRENT (A) 5 If R = t AV = (L)(I AS )/(.3*RATED BV DSS - V DD ) If R t AV = (L/R)ln[(I AS *R)/(.3*RATED BV DSS - V DD ) +] STARTING T J = 5 o C STARTING T J = 5 o C.. t AV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN754 and AN755 Figure 6. Unclamped Inductive Switching Capability 6 8 4 V GS = V V GS = 5V PULSE DURATION = 8μs DUTY CYCLE =.5% MAX V GS = 4.5V V GS = 4V Figure 8. Saturation Characteristics 5 3 4 5 V DS, DRAIN TO SOURCE VOLTAGE (V) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) 8 6 4 I D = 8A PULSE DURATION = 8μs DUTY CYCLE =.5% MAX T J = 5 o C T J = 75 o C 3 4 5 6 7 8 9 V GS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage NORMALIZED DRAIN TO SOURCE ON-RESISTANCE.8.6.4.. PULSE DURATION = 8μs DUTY CYCLE =.5% MAX.8 I D = 8A V GS = V.6-8 -4 4 8 6 T J, JUNCTION TEMPERATURE( o C) Figure. Normalized Drain to Source On Resistance vs Junction Temperature 5
Typical Characteristics NORMALIZED GATE THRESHOLD VOLTAGE...8.6 V GS = V DS I D = 5μA.4-8 -4 4 8 6 T J, JUNCTION TEMPERATURE( o C) Figure. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pf) f = MHz V GS = V C rss C oss C iss. V DS, DRAIN TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE.5..5..95 I D = ma.9-8 -4 4 8 6 T J, JUNCTION TEMPERATURE ( o C) Figure. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 8 6 4 ID = 35A V DD = V V DD = 5V 5 4 6 8 4 6 Q g, GATE CHARGE(nC) V DD = 5V Figure 3. Capacitance vs Drain to Source Voltage Figure 4. Gate Charge vs Gate to Source Voltage 6
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