Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Similar documents
OBSOLETE HMC5846LS6 AMPLIFIERS - LINEAR & POWER - SMT. Electrical Specifications, T A. Features. Typical Applications. General Description

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 70 ma

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 45 ma

Features. Output Power for 1 db Compression (P1dB) dbm Saturated Output Power (Psat) dbm

Features. = +25 C, Vdd = +5V, Idd = 400mA [1]

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

HMC659LC5 LINEAR & POWER AMPLIFIERS - SMT. GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz. Features. Typical Applications. General Description

Features. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain

Features. = +25 C, Vdd =+28V, Idd = 850 ma [1]

Features. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain

HMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram

Features. = +25 C, Vdd= 8V, Idd= 75 ma*

HMC5805ALS6 AMPLIFIERS - LINEAR & POWER - SMT. Typical Applications. Features. Functional Diagram

Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*

Features = +5V. = +25 C, Vdd 1. = Vdd 2

Features. = +25 C, Vdd = +4V, Idd = 90 ma [2]

Features. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V

HMC1040LP3CE. Amplifiers - Low Noise - smt. GaAs phemt MMIC LOW NOISE AMPLIFIER, GHz. Features. Typical Applications. General Description

Parameter Min. Typ. Max. Units Frequency Range GHz

Gain Control Range db

Features. = +25 C, Vdd 1, 2, 3 = +3V

Features. = +25 C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1]

HMC486LP5 / 486LP5E LINEAR & POWER AMPLIFIERS - SMT. SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7-9 GHz. Typical Applications.

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]

SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER,

Features. = +25 C, Vdd = +7V, Idd = 1340 ma [1]

HMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications

Features. = +25 C, Vdd = +10 V, Idd = 350 ma

Features. = +25 C, Vdd = 5V

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]

HMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

Features OBSOLETE. Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) dbm Supply Current (Idd) ma

Features. = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 ma [1]

Features. = +25 C, Vdd= +12V, Vgg2= +5V, Idd= 400 ma*

Features. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]

Features. = +25 C, Vdd= 5V, Vgg2= Open, Idd= 60 ma*

Features = +5V. = +25 C, Vdd 1. = Vdd 2

Features

HMC599ST89 / 599ST89E. Features. The HMC599ST89(E) is ideal for: = +25 C MHz. Gain Variation Over Temperature MHz 0.

Features. = +25 C, Vdd= 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz

HMC326MS8G / 326MS8GE

Features. = +25 C, Vs = +5V. Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range MHz Gain

10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz HMC1114

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

HMC639ST89 / 639ST89E

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E

Features. = +25 C, Vdd = +6V, Idd = 375mA [1]

Features. = +25 C, Vdd = +5V, 5 dbm Drive Level

GaAs, phemt, MMIC, Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049LP5E

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vdd = +5V, Rbias = 10 Ohms*

Features. = +25 C, Vdd = +3V

Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter

Features. = +25 C, Vdd = 7V, Vctl = 1V, Idd = 165mA*

2 GHz to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC7950

HMC998. Amplifiers - Linear & Power - Chip. GaAs phemt MMIC 2 WATT POWER AMPLIFIER, GHz. Electrical Specifications, T A.

Features. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.

OBSOLETE. = +25 C, Vdd = Vs= +5V, Vctl= 0/ +5V. Parameter Frequency Min. Typ. Max. Units DC GHz 37. db Gain (Maximum Gain State)

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vdd = 5V, Idd = 200 ma*

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

HMC948LP3E POWER DETECTORS - SMT. 54 db, LOGARITHMIC DETECTOR, 1-23 GHz. Typical Applications. Features. Functional Diagram. General Description

Features. = +25 C, Vcc =5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Units

Features. = +25 C, Vdd= +3V. Parameter Min. Typ. Max. Units Frequency Range GHz Gain db

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V

= +25 C, IF = 2350 MHz, LO = +4 dbm, VDLO1, 2 = +3V, IDLO = 150 ma, VDRF = +3V, IDRF = 200mA, USB [1][2] Parameter Min. Typ. Max.

Parameter Min. Typ. Max. Units

GaAs phemt MMIC Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049

>10 W, GaN Power Amplifier, 0.01 GHz to 1.1 GHz HMC1099

Features OBSOLETE. = +25 C, as a function of Vdd. Vdd = +3V Vdd = +5V Vdd = +5V Vdd = +5V Parameter

Features. = +25 C, VDD = +5 V, 0 dbm Drive Level [1]

Features OBSOLETE. = +25 C, IF= 1 GHz, USB, LO = +15 dbm [1]

HMC454ST89 / 454ST89E. Features. = +25 C, Vs= +5V [1]

Features. = +25 C, 50 Ohm system

Features. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V

OBSOLETE HMC915LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram. General Description

Features OBSOLETE. = +25 C, Vcc= 5V [1]

Features OBSOLETE. Parameter Min. Typ. Max. Units. Frequency Range GHz Insertion Loss 5 7 db. Input Return Loss 16 db

HMC454ST89 / 454ST89E

HMC589ST89 / 589ST89E. Features OBSOLETE. DC GHz GHz GHz. db Gain 22

Features. = +25 C, IF= 100 MHz, LO= +15 dbm* Parameter Min. Typ. Max. Min. Typ. Max. Units

Features OBSOLETE. = +25 C, 50 Ohm system, Vdd = +5V. Parameter Frequency Min. Typ. Max. Units GHz

Analog Devices Welcomes Hittite Microwave Corporation

Features. = +25 C, 50 Ohm system

Features. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature

Features. = +25 C, Vdd = 7V, Vctl = 1V, Idd = 165mA*

HMC478SC70 / 478SC70E v

HMC913LC4B. SDLVAs - SMT. SUCCESSIVE DETECTION LOG VIDEO AMPLIFIER (SDLVA), GHz

Features. = +25 C, Vcc = 5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Units

TEL: FAX: v.117 HMC3 / 3E GENERAL PURPOSE 1 mw GaAs MMIC AMPLIFIER, GHz Broadband Gain & Return Vdd =

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma

Features. = +25 C, Vdd = 5V, Vgg1 = Vgg2 = Open

Customised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vdd = +5V, Idd = 63 ma

Transcription:

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com

THIS PAGE INTENTIONALLY LEFT BLANK

v1.414 Typical Applications The HMC5846LS6 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram Features Saturated Output Power: 35.5 dbm @ % PAE High Output IP3: 42.5 dbm High Gain: 31 db DC Supply: +7V @ 12 ma No External Matching Required General Description The HMC5846LS6 is a 4 stage GaAs phemt MMIC 2 Watt Power Amplifier with an integrated temperature compensated power detector which operates between 12 and 16 GHz. The HMC5846LS6 provides 31 db of gain, 35.5 dbm of saturated output power, and % PAE from a +7V supply. The HMC5846LS6 exhibits excellent linearity and is optimized for high capacity digital microwave radio. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SATCOM applications. Electrical Specifications, T A = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 = +7V, Idd = 12 ma [1] Parameter Min. Typ. Max. Units Frequency Range 12-16 GHz Gain 26 31 db Gain Variation Over Temperature.6 db/ C Input Return Loss 1 db Output Return Loss 17 db Output Power for 1 db Compression (P1dB).5.5 dbm Saturated Output Power (Psat) 35.5 dbm Output Third Order Intercept (IP3) [2] 42.5 dbm Total Supply Current (Idd) 12 ma [1] Adjust Vgg between -2 to V to achieve Idd = 12 ma typical. [2] Measurement taken at +7V @ 12 ma, Pout / Tone = +22 dbm 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: 978-25-33 Fax: 978-25-3373 Order On-line at www.hittite.com Application Support: Phone: 978-25-33 or apps@hittite.com

v1.414 Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature RESPONSE (db) 2 1-1 -2-1 11 17 18 S21 S11 S22 Input Return Loss vs. Temperature RETURN LOSS (db) -4-8 -12-16 -2 11 17 +25C +85C -C GAIN (db) 26 22 18 11 17 +25C +85C -C Output Return Loss vs. Temperature RETURN LOSS (db) -5-1 -15-2 -25-11 17 +25C +85C -C P1dB vs. Temperature P1dB vs. Supply Voltage P1dB (dbm) P1dB (dbm) 26 26 +25C +85C -C 5V 6V 7V For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: 978-25-33 Fax: 978-25-3373 Order On-line at www.hittite.com Application Support: Phone: 978-25-33 or apps@hittite.com 2

v1.414 Psat vs. Temperature Psat vs. Supply Voltage Psat (dbm) +25C +85C -C P1dB vs. Supply Current (Idd) P1dB (dbm) 26 9mA 1mA 11mA 12mA Psat (dbm) 5V 6V 7V Psat vs. Supply Current (Idd) Psat(dBm) 26 9mA 1mA 11mA 12mA Output IP3 vs. Temperature, Pout/Tone = +22 dbm 48 46 44 Output IP3 vs. Supply Current, Pout/Tone = +22 dbm 48 46 44 42 42 IP3 (dbm) IP3 (dbm) +25C +85C -C 9mA 1mA 11mA 12mA [1] Footnote if needed 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: 978-25-33 Fax: 978-25-3373 Order On-line at www.hittite.com Application Support: Phone: 978-25-33 or apps@hittite.com

v1.414 Output IP3 vs. Supply Voltage, Pout/Tone = +22 dbm Output IM3 @ Vdd = +5V 48 8 IP3 (dbm) 46 44 42 5V 6V 7V 1 12 14 16 18 2 22 24 Output IM3 @ Vdd = +6V Output IM3 @ Vdd = +7V IM3 (dbc) 8 7 6 5 2 1 1 12 14 16 18 2 22 24 12 GHz 13 GHz Pout/TONE (dbm) 14 GHz 15 GHz 16 GHz IM3 (dbc) IM3 (dbc) 7 6 5 2 1 8 7 6 5 2 1 12 GHz 13 GHz Pout/TONE (dbm) 14 GHz 15 GHz 16 GHz 1 12 14 16 18 2 22 24 12 GHz 13 GHz Pout/TONE (dbm) 14 GHz 15 GHz 16 GHz Power Compression @ 13 GHz Power Compression @ 14 GHz Pout (dbm), GAIN (db), PAE (%) 35 25 2 15 1 5 Pout (dbm), GAIN (db), PAE (%) 35 25 2 15 1 5-1 -8-6 -4-2 2 4 6 8-1 -8-6 -4-2 2 4 6 8 1 INPUT POWER (dbm) INPUT POWER (dbm) Pout Gain PAE Pout Gain PAE For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: 978-25-33 Fax: 978-25-3373 Order On-line at www.hittite.com Application Support: Phone: 978-25-33 or apps@hittite.com 4

v1.414 Power Compression @ 15 GHz Detector Voltage Over Temperature 1 Pout (dbm), GAIN (db), PAE (%) 35 25 2 15 1 5-1 -8-6 -4-2 2 4 6 8 1 INPUT POWER (dbm) Pout Gain PAE Reverse Isolation vs. Temperature ISOLATION (db) -1-2 - - -5-6 -7-8 -9 11 17 +25C +85C -C Vref-Vdet (V) 1.1.1-5 3 11 19 27 35 OUTPUT POWER (dbm) 12.5GHz +25C 12.5GHz +85C 12.5GHz -55C Gain & Power vs. Supply Current @ 14 GHz Gain (db), P1dB (dbm), Psat (dbm) 35 25 2 15.5GHz +25C 15.5GHz +85C 15.5GHz -55C 9 1 11 12 Idd (ma) Gain P1dB Psat Gain & Power vs. Supply Voltage @ 14 GHz Gain (db), P1dB (dbm), Psat (dbm) 45 35 25 2 5 5.5 6 6.5 7 Vdd (V) Power Dissipation POWER DISSIPATION (W) 1 9 8 7 6 5 4 3 2 1-1 -8-6 -4-2 2 4 6 8 INPUT POWER (dbm) Gain P1dB Psat Max Pdis @ 85C 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: 978-25-33 Fax: 978-25-3373 Order On-line at www.hittite.com Application Support: Phone: 978-25-33 or apps@hittite.com

v1.414 Absolute Maximum Ratings Reliability Information Drain Bias Voltage (Vdd) +8V RF Input Power (RFIN) Outline Drawing +24 dbm Channel Temperature 15 C Continuous Pdiss (T= 85 C) (derate 133 mw/ C above 85 C) Thermal Resistance (channel to ground paddle) 8.6 W 7.55 C/W Storage Temperature -65 to +15 C Operating Temperature -55 to +85 C ESD Sensitivity (HBM) Class 1A Pass 25V Junction Temperature to Maintain 1 Million Hour MTTF Nominal Junction Temperature (T= 85 C and Pin = 1 dbm) 15 C 9 C Operating Temperature -55 to +85 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Package Information Part Number Package Body Material Lead Finish MSL Rating [2] Package Marking [1] HMC5846LS6 ALUMINA WHITE Gold over Nickel N/A [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 26 C H5846 XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: 978-25-33 Fax: 978-25-3373 Order On-line at www.hittite.com Application Support: Phone: 978-25-33 or apps@hittite.com 6

v1.414 Pin Descriptions Pad Number Function Description Interface Schematic 6 RFIN 1-4 9, 1 Vdd4, Vdd3, Vdd2, Vdd1, Vdd5, Vdd6 8 Vgg1 5, 7, 13, 15, 16 GND 11 Vref 12 Vdet This Pin is DC coupled and matched to 5 Ohms over the operating frequency. Drain bias voltage for the amplifier. External bypass capacitors of 1 pf are required for each pin followed by.1 μf capacitors and a 4.7 μf capacitors. Gate controlled amplifier. External bypass capacitors of 1 pf are required followed by.1 μf capacitors and a 4.7 μf capacitors. These Pins and Package bottom must be connected to RF/DC ground. DC voltage of diode biased through external resistor, used for temperature compensation of Vdet. DC voltage representing RF output rectified by diode which is biased through an external resistor. 14 RFOUT This Pin is DC coupled and matched to 5 Ohms. Application Circuit 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: 978-25-33 Fax: 978-25-3373 Order On-line at www.hittite.com Application Support: Phone: 978-25-33 or apps@hittite.com

v1.414 Evaluation PCB List of Materials for Evaluation PCB EVAL1-HMC5846L56 [1] Item Description J1, J2 PCB Mount K Connectors, SRI J5, J6 DC Pins C1 - C6, C2, C21, C23 1 pf Capacitors, 2 Pkg. C7 - C12, C19, C25, C26.1 μf Capacitors, 63 Pkg. C13 - C18, C29 - C31 4.7 μf Capacitors, Case A Pkg. R1 - R2.2 kohm Resistor, 2 Pkg. U1 HMC5846LS6 Amplifier PCB [2] 1996 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 5 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [2] Circuit Board Material: Rogers 435 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 1824 Phone: 978-25-33 Fax: 978-25-3373 Order On-line at www.hittite.com Application Support: Phone: 978-25-33 or apps@hittite.com 8