Descrition The SL series of transient voltage suressors are designed to rotect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. The devices are constructed using Semtech s rorietary EPD rocess technology. The EPD rocess rovides low standoff voltages with significant reductions in leakage currents and caacitance over siliconavalanche diode rocesses. The SLE2.8 and SLG2.8 are in a SOT-3 ackage and have a low 2.8 working voltage. They may be used to rotect one line in differential or common mode. The flow-thru design minimizes trace inductance and reduces voltage overshoot associated with ESD events. The SL is secifically designed to rotect low voltage comonents such as Ethernet transceivers, laser diodes, ASICs, and high-seed RAM. The low claming voltage of the SL minimizes the stress on the rotected IC. The SL series TS diodes will exceed the surge requirements of IEC 6--2, Level. SLE2.8 and SLG2.8 EPD TS Diodes For ESD and Latch-U Protection Features 3 Watts eak ulse ower (t = 8/2μs) Transient rotection for low voltage data lines to IEC 6--2 (ESD) ±5k (air), ±8k (contact) IEC 6-- (EFT) A (5/5ns) IEC 6--5 (Lightning) 2A (8/2μs) Protects one line Comrehensive in out for easy board layout Low caacitance Low leakage current Low oerating and claming voltages Solid-state EPD TS rocess technology Mechanical Characteristics JEDEC SOT-3 ackage Molding comound flammability rating: UL 9- Marking : Marking code Packaging : Tae and Reel er EIA 8 Alications ESD and Latch-u Protection Analog Inuts WAN/LAN Equiment Low ASICs Desktos, Servers, Notebooks and Handhelds Portable Instrumentation Base Stations Laser Diode Protection Schematic & Pin Configuration Schematic & PIN Configuration SLG2.8 (To iew) SLE2.8 (To iew) Revision /28/3
Absolute Maximum Rating Rating Symbol alue Units Peak Pulse Power (t = 8/2μ s) Peak Pulse Current (t = 8/2μ s) P k 3 Watts 2 A Lead Soldering Temerature T L 26 ( seconds) o C Oerating Temerature T J -55 to +25 o C Storage Temerature T STG 55 to +5 - o C Electrical Characteristics SLE2.8 Parameter Symbol Conditions Minimum Tyical Maximum Units Stand-Off WM R. 8 2 Punch-Through Sna-Back PT SB I PT I SB = 2μA 3. = 5mA 2. 8 Leakage Current I R RWM = 2.8, T=25 C μa = A, t = 8/2μs. = 5A, t = 8/2μs 5. 3 = 2A, t = 8/2μs 5 Junction Caacitance C j Line-to-Line =, f = MHz R F SLG2.8 Parameter Symbol Conditions Minimum Tyical Maximum Units Stand-Off WM R. 8 2 Punch-Through Sna-Back PT SB I PT I SB = 2μA 3. = 5mA 2. 8 Leakage Current I R RWM = 2.8, T=25 C μa = A, t = 8/2μs. = 5A, t = 8/2μs 5. 3 = 2A, t = 8/2μs 5 Junction Caacitance C j Line-to-Line =, f = MHz R 5 F 23 Semtech Cor. 2
Tyical Characteristics Non-Reetitive Peak Pulse Power vs. Pulse Time Power Derating Curve Peak Pulse Power - Pk (kw)... Pulse Duration - t (μs) % of Rated Power or 9 8 7 6 5 3 2 25 5 75 25 5 Ambient Temerature - T A ( o C) Pulse Waveform vs. Peak Pulse Current Percent of IPP 9 8 7 6 5 3 2 e -t td = /2 Waveform Parameters: tr = 8μs td = 2μs 5 5 2 25 3 Time (μs) - C () 2 8 6 2 SLG2.8 SLE2.8 Waveform Parameters: tr = 8μs td = 2μs 5 5 2 25 3 Peak Pulse Current - (A) 23 Semtech Cor. 3
Alications Information Device Connection Electronic equiment is suscetible to transient disturbances from a variety of sources including: ESD to an oen connector or interface, direct or nearby lightning strikes to cables and wires, and charged cables hot lugged into I/O orts. The SL series is designed to rotect sensitive comonents from damage and latchu which may result from such transient events. The SLG2.8 is designed to rotect one unidirectional line while the SLE2.8 is designed to rotect one bidirectional line (or two differential lines). The otions for connecting the devices are as follows: SLE2.8: Common mode rotection of one bidirectional data line is achieved by connecting the data line inut/outut at ins 2 and 3. Pins and are connected to ground. For differential rotection, ins and can be connected to a second I/O line. For best results, the ground connection should be made directly to a ground lane on the board. The ath length should be ket as short as ossible to minimize arasitic inductance. SLG2.8: Common mode rotection of one unidirectional line is achieved by connecting the line to be rotected at ins 2 and 3. Pins and are connected to ground. For best results, the ground connection should be made directly to a ground lane on the board. The ath length should be ket as short as ossible to minimize arasitic inductance. Circuit Board Layout Recommendations for Suression of ESD. Good circuit board layout is critical for the suression of ESD induced transients. The following guidelines are recommended: Place the TS near the inut terminals or connectors to restrict transient couling. Minimize the ath length between the TS and the rotected line. Minimize all conductive loos including ower and ground loos. The ESD transient return ath to ground should be ket as short as ossible. Never run critical signals near board edges. Use ground lanes whenever ossible. SLG2.8 Circuit Diagrams Common Mode Protection (SLE2.8 and SLG2.8) Line In Line In Line 2 In Line Out Differential Mode Protection (SLE2.8 only) SLE2.8 Line Out Line 2 Out 23 Semtech Cor.
Alications Information (continued) EPD TS Characteristics The SL series is constructed using Semtech s rorietary EPD technology. The structure of the EPD TS is vastly different from the traditional n-junction devices. At voltages below 5, high leakage current and junction caacitance render conventional avalanche technology imractical for most alications. However, by utilizing the EPD technology, the SLE2.8 and SLG2.8 can effectively oerate at 2.8 while maintaining excellent electrical characteristics. BRR IPP I SB I PT I R RWM SB PT The EPD TS emloys a comlex nn structure in contrast to the n structure normally found in traditional silicon-avalanche TS diodes. The EPD mechanism is achieved by engineering the center region of the device such that the reverse biased junction does not avalanche, but will unch-through to a conducting state. This structure results in a device with suerior dc electrical arameters at low voltages while maintaining the caability to absorb high transient currents. I BRR EPD TS Iharacteristic Curve The I characteristic curve of the EPD device is shown in Figure. The device reresents a high imedance to the circuit u to the working voltage ( RWM ). During a transient event, the device will begin to conduct as it is biased in the reverse direction. When the unchthrough voltage ( PT ) is exceeded, the device enters a low imedance state, diverting the transient current away from the rotected circuit. When the device is conducting current, it will exhibit a slight sna-back or negative resistance characteristic due to its structure. This must be considered when connecting the device to a ower suly rail. To return to a non-conducting state, the current through the device must fall below the sna-back current (aroximately < 5mA). 23 Semtech Cor. 5
Outline Drawing - SOT-3 Notes: () Controlling dimension: Millimeters. (2) Dimension A and B do not include mold rotrusions. Mold rotrusions are.6 max. Land Pattern - SOT-3 23 Semtech Cor. 6
Marking Codes Part Number Marking Code SLE2.8 E2. 8 SLG2.8 G2. 8 Ordering Information Part Number Working Qty er Reel Reel Size SLE2.8.TC SLG2.8.TC 2.8 3, 7 Inch 2.8 3, 7 Inch Note: Consult factory for availability of 3 reels Contact Information Semtech Cororation Protection Products Division 2 Flynn Road, Camarillo, CA 932 Phone: (85)98-2 FAX (85)98-38 23 Semtech Cor. 7