MDD192 Single N-Channel Trench MOSFET V MDD192 Single N-channel Trench MOSFET V, 4A, 28mΩ General Description Features The MDD192 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD192 is suitable device for DC/DC Converters and general purpose applications. V DS = V = 4A @ = V < 28mΩ @ = V < 31mΩ @ = 6.V D G S Absolute Maximum Ratings (Tc = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS V Gate-Source Voltage S ± V Continuous Drain Current (1) T C=25 o C 4 A T C= o C 25 A Pulsed Drain Current M 8 A Power Dissipation T C=25 o C P D 83 T C= o C 33 Single Pulse Avalanche Energy (2) E AS mj Junction and Storage Temperature Range T J, T stg -55~15 W o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient R θja 5 Thermal Resistance, Junction-to-Case (1) R θjc 1.5 o C/W 1
MDD192 Single N-Channel Trench MOSFET V Ordering Information Part Number Temp. Range Package Packing Rohs Status MDD192RH -55~15 o C D-PAK Tape & Reel Halogen Free Electrical Characteristics (Tc =25 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV DSS = 25μA, = V - - Gate Threshold Voltage (th) V DS =, = 25μA 2. 3. 4. V Drain Cut-Off Current SS V DS = 8V, = V - - 1 Gate Leakage Current I GSS = ±V, V DS = V - - ±.1 μa = V, = A - 21 28 Drain-Source ON Resistance T J=125 o C - 32 4 mω = 6.V, = A - 23.5 31 Forward Transconductance g fs V DS = 5V, = A - 55 - S Dynamic Characteristics Total Gate Charge Q g - 39.8 48 Gate-Source Charge Q gs V DS = 5V, = A, = V - 11 - nc Gate-Drain Charge Q gd - 11.2 - Input Capacitance C iss - 87 255 Reverse Transfer Capacitance C rss V DS = 25V, = V, f = 1.MHz - 82 - pf Output Capacitance C oss - 23 - Gate Resistance R g =V,V DS=V,F=1MHz - 2.1 2.5 Ω Turn-On Delay Time t d(on) -.5 Rise Time t r V DS=5V, =V, - 27.5 Turn-Off Delay Time t d(off) R L=3.2Ω, R GEN=3.2Ω - 38.5 ns Fall Time t f - 14 Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V SD I S = 1A, = V -.7 1.2 V Body Diode Reverse Recovery Time t rr I F = A, dl/dt = A/μs - 63 76 ns Body Diode Reverse Recovery Charge Q rr - 145 - nc Note : 1. Surface mounted RF4 board with 2oz. Copper. 2. Starting T J=25 C, L=1mH, I AS=A, V DD=5V, =V 2
-I S, (Normalized) Drain-Source On-Resistance [mω ] [mω ], Drain Current [mω ] MDD192 Single N-Channel Trench MOSFET V 4 8 6.V ~ V 5.V 3 6 =6.V 4.5V 4 =V 4.V 1 2 3 4 5 V DS, Drain-Source Voltage Fig.1 On-Region Characteristics 3.5V 3 4 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 2.2 6 2. 1.8 5 1.6 =V =A 125 1.4 4 1.2 1..8 3.6 25.4-5 -25 25 5 75 125 15 T J, Junction Temperature [ o C] 4 6 8 Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage *Note ; VDS=5.V 1 15.1.1 1E-3 5 1E-4 125 125 25 1E-5 25 1 2 3 4 5 Fig.5 Transfer Characteristics 1E-6..2.4.6.8 1. -V SD Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3
Z θ ja, Normalized Thermal Response [t] Capacitance [pf] MDD192 Single N-Channel Trench MOSFET V 9 8 * Note ; = A 3 25 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd C iss 7 6 5 15 4 3 2 1 5 C rss C oss * Notes ; 1. = V 2. f = 1 MHz 3 4 Q g [nc] 5 15 25 3 35 4 V DS Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 3 5 2 4 1 ms 3 1 ms Operation in This Area is Limited by R DS(on) ms -1 Single Pulse R θ jc =1.5 /W T a =25-1 1 2 3 V DS DC 25 5 75 125 15 T C [ ] Fig.9 Maximum Safe Operating Area Fig. Maximum Drain Current vs. Case Temperature 1 D=.5-1 -2.2.1.5.2.1 single pulse Notes : Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ Ja * R θ Ja (t) + T a R Θ JC =1.5 /W -3-5 -4-3 -2-1 1 t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve 4
MDD192 Single N-Channel Trench MOSFET V Package Dimension D-PAK (TO-252) Dimensions are in millimeters, unless otherwise specified 5
MDD192 Single N-Channel Trench MOSFET V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. 6