FDH055N15A N-Channel PowerTrench MOSFET 150 V, 167 A, 5.9 mω Features R DS(on) = 4.8 mω (Typ.) @ V GS = V, I D = 120 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low R DS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using ON Semiconductor s advanced PowerTrench process that has been tai-lored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Sever / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter G D S TO-247 Absolute Maximum Ratings T C = 25 o C unless otherwise noted. Symbol Parameter FDH055N15A Unit S Drain to Source Voltage 150 V V GSS Gate to Source Voltage - DC ±20 - AC (f > 1 Hz) ±30 V - Continuous (T C = 25 o C, Silicon Limited) 167* I D Drain Current - Continuous (T C = 0 o C, Silicon Limited) 118 A - Continuous (TC = 25 o C, Package Limited) 156 I DM Drain Current - Pulsed (Note 1) 668 A E AS Single Pulsed Avalanche Energy (Note 2) 835 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P D Power Dissipation (T C = 25 o C) 429 W - Derate Above 25 o C 2.86 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +175 o C T L Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 o C *Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 156 A. Thermal Characteristics Symbol Parameter FDH055N15A Unit R θjc Thermal Resistance, Junction to Case, Max. 0.35 o C/W R θja Thermal Resistance, Junction to Ambient, Max. 40 2011 Semiconductor Components Industries, LLC. October-2017,Rev.3 Publication Order Number: FDH055N15A/D
Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDH055N15A FDH055N15A TO-247 Tube N/A N/A 30 units Electrical Characteristics T C = 25 o C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BS Drain to Source Breakdown Voltage I D = 250 μa, V GS = 0 V 150 - - V ΔBS Breakdown Voltage Temperature I / ΔT J Coefficient D = 250 μa, Referenced to 25 o C - 0.1 - V/ o C = 120 V, V GS = 0 V - - 1 I DSS Zero Gate Voltage Drain Current μa = 120 V, T C = 150 o C - - 500 I GSS Gate to Body Leakage Current V GS = ±20 V, = 0 V - - ±0 na On Characteristics V GS(th) Gate Threshold Voltage V GS =, I D = 250 μa 2.0-4.0 V R DS(on) Static Drain to Source On Resistance V GS = V, I D = 120 A - 4.8 5.9 mω g FS Forward Transconductance = V, I D = 120 A - 219 - S Dynamic Characteristics C iss Input Capacitance - 70 9445 pf = 75 V, V GS = 0 V, C oss Output Capacitance - 664 885 pf f = 1 MHz C rss Reverse Transfer Capacitance - 23 35 pf C oss(er) Energy Related Output Capacitance = 75 V, V GS = 0 V - 1159 - pf Q g(tot) Total Gate Charge at V - 92 - nc Q gs Gate to Source Gate Charge = 75 V, I D = 120 A, - 31 - nc Q gs2 Gate Charge Threshold to Plateau V GS = V - 15 - nc Q gd Gate to Drain Miller Charge (Note 4) - 16 - nc ESR Equivalent Series Resistance(G-S) f = 1 MHz - 1.2 - Ω Switching Characteristics t d(on) Turn-On Delay Time V DD = 75 V, I D = 120 A, - 35 80 ns t r Turn-On Rise Time V GS = V, R G = 4.7 Ω - 67 144 ns t d(off) Turn-Off Delay Time - 71 152 ns t f Turn-Off Fall Time (Note 4) - 21 52 ns Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - 167* A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 668 A V SD Drain to Source Diode Forward Voltage V GS = 0 V, I SD = 120 A - - 1.25 V t rr Reverse Recovery Time V GS = 0 V, I SD = 120 A, = 75 V, - 5 - ns Q rr Reverse Recovery Charge di F /dt = 0 A/μs - 342 - nc Q rr Reverse Recovery Charge V GS = 0 V, I SD = 30 A, = 75 V, di F /dt = 0 A/μs - 348 - nc Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. Starting T J = 25 C, L = 3 mh, I AS = 23.6 A. 3. I SD 120 A, di/dt 200 A/μs, V DD BS, starting T J = 25 C. 4. Essentially independent of operating temperature typical characteristics. 2
Typical Performance Characteristics ID, Drain Current[A] Figure 1. On-Region Characteristics 500 0 V GS = 15.0V.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 1. 250μs Pulse Test 2. T C = 25 o C 0.1 1 4, Drain-Source Voltage[V] Figure 2. Transfer Characteristics 1 2 3 4 5 6 V GS, Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 6.5 ID, Drain Current[A] 500 0 500 1. = V 2. 250μs Pulse Test 175 o C 25 o C -55 o C RDS(ON) [mω], Drain-Source On-Resistance 6.0 5.5 5.0 4.5 V GS = V V GS = 20V *Note: T C = 25 o C 4.0 0 50 0 150 200 250 300 350 400 450 I D, Drain Current [A] IS, Reverse Drain Current [A] 0 175 o C 25 o C 1. V GS = 0V 2. 250μs Pulse Test 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V SD, Body Diode Forward Voltage [V] Figure 5. Capacitance Characteristics 000 Figure 6. Gate Charge Characteristics Capacitances [pf] 00 0 *Note: 1. V GS = 0V 2. f = 1MHz C iss C oss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd C rss Crss = Cgd 0.1 1 0 200, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] 8 6 4 2 = 30V = 75V = 120V *Note: I D = 120A 0 0 25 50 75 0 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1. 1.05 1.00 0.95 1. V GS = 0V 2. I D = 250μA 0.90-0 -50 0 50 0 150 200 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 00 μs RDS(on), [Normalized] Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature 2.8 2.4 2.0 1.6 1.2 0.8 1. V GS = V 2. I D = 120A 0.4-0 -50 0 50 0 150 200 T J, Junction Temperature [ o C] Figure. Maximum Drain Current vs. Case Temperature 180 ID, Drain Current [A] 0 1 0.1 0.01 Operation in This Area is Limited by R DS(on) 1. T C = 25 o C 2. T J = 175 o C 3. Single Pulse 1ms ms DC 0μs 1 0 200, Drain-Source Voltage [V] ID, Drain Current [A] 135 V GS= V 90 Limited by package 45 R θjc = 0.35 o C/W 0 25 50 75 0 125 150 175 T C, Case Temperature [ o C] Figure 11. Eoss vs. Drain to Source Voltage 8 6 E OSS, [μj] 4 2 0 0 30 60 90 120 150, Drain to Source Voltage [V] 4
Typical Performance Characteristics (Continued) Z θjc Thermal (t), Thermal Response Response [Z θjc [ o ] C/W] 1 0.1 0.01 0.5 Figure 12. Transient Thermal Response Curve 0.2 P DM 0.1 0.05 t 1 t 2 0.02 0.01 1. Z θjc (t) = 0.35 o C/W Max. Single pulse 2. Duty Factor, D= t 1 /t 2 3. T JM - T C = P DM * Z θjc (t) 0.001-5 -4-3 -2-1 1 t 1, Rectangular Pulse Duration [sec] 5
I G = const. Figure 13. Gate Charge Test Circuit & Waveform R L 90% R G V GS V DD V V GS DUT % V GS t d(on) t r t d(off) tf t on t off Figure 14. Resistive Switching Test Circuit & Waveforms V GS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms 6
V GS R G DUT I SD Driver + _ L Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD V GS ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms 7
Mechanical Dimensions Figure 17. TO-247, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. 8
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