RF4E080GN Nch 30V 8A Middle Power MOSFET Datasheet V DSS R DS(on) (Max.) 30V 17.6mΩ I D ±8A loutline HUML2020L8 P D 2W DFN2020-8S lfeatures 1) Low on - resistance. 2) High power small mold package (HUML2020L8). 3) Pb-free lead plating ; RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested. linner circuit lpackaging specifications Packing Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000 labsolute maximum ratings (T a = 25 C) Taping code Marking Parameter Symbol Value Unit Drain - Source voltage V DSS 30 V Continuous drain current I D ±8 A Pulsed drain current I D,pulse *1 ±32 A Gate - Source voltage V GSS ±20 V Power dissipation P D *2 2 W Junction temperature T j 150 Range of storage temperature T stg -55 to +150 TR HC 2015 ROHM Co., Ltd. All rights reserved. 1/10 20150730 - Rev.001
lthermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - ambient R *2 thja - - 62.5 /W lelectrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = 0V, I D = 1mA 30 - - V Breakdown voltage temperature coefficient Zero gate voltage drain current ΔV (BR)DSS I D = 1mA ΔT j referenced to 25-28 - mv/ I DSS V DS = 30V, V GS = 0V - - 1 μa Gate - Source leakage current I GSS V GS = ±20V, V DS = 0V - - ±100 na Gate threshold voltage V GS(th) V DS = V GS, I D = 250μA 1.0-2.5 V Gate threshold voltage temperature coefficient Static drain - source on - state resistance ΔV GS(th) I D = 1mA ΔT j referenced to 25 R DS(on) *3 - -3.87 - mv/ V GS = 10V, I D = 8A - 13.5 17.6 V GS = 4.5V, I D = 8A - 17.6 22.8 Gate input resistance R G f=1mhz, open drain - 2.5 - Ω mω Forward Transfer Admittance Y fs *3 V DS = 5V, I D = 8A 5 - - S *1 Pw 10μs, Duty cycle 1% *2 Mounted on Cu Board (40 40 0.8mm) *3 Pulsed 2015 ROHM Co., Ltd. All rights reserved. 2/10 20150730 - Rev.001
lelectrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Input capacitance C iss V GS = 0V - 295 - Output capacitance C oss V DS = 15V - 89 - Reverse transfer capacitance C rss f = 1MHz - 24 - Turn - on delay time t *3 d(on) V DD 15V,V GS = 10V - 6.9 - Rise time t *3 r I D = 4A - 3.6 - Turn - off delay time t *3 d(off) R L 3.75Ω - 17.3 - Fall time t *3 f R G = 10Ω - 2.4 - Unit pf ns lgate charge characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Total gate charge Q *3 g V GS = 10V - 5.8 - V DD 15V - 2.8 - Gate - Source charge Q *3 gs I D = 8A V GS = 4.5V - 1.4 - Gate - Drain charge Q *3 gd - 0.5 - Unit nc lbody diode electrical characteristics (Source-Drain) (T a = 25 C) Parameter Symbol Conditions Body diode continuous forward current Body diode pulse current Values Min. Typ. Max. I S - - 1.67 A T a = 25 I *1 SP - - 32 A Forward voltage V SD *3 V GS = 0V, I S = 1.67A - - 1.2 V Unit 2015 ROHM Co., Ltd. All rights reserved. 3/10 20150730 - Rev.001
lelectrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maximum Power dissipation 2015 ROHM Co., Ltd. All rights reserved. 4/10 20150730 - Rev.001
lelectrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) Fig.7 Breakdown Voltage vs. Junction Temperature Fig.8 Typical Transfer Characteristics 2015 ROHM Co., Ltd. All rights reserved. 5/10 20150730 - Rev.001
lelectrical characteristic curves Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Forward Transfer Admittance vs. Drain Current Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 2015 ROHM Co., Ltd. All rights reserved. 6/10 20150730 - Rev.001
lelectrical characteristic curves Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature Fig.14 Static Drain - Source On - State Resistance vs. Drain Current (I) Fig.15 Static Drain - Source On - State Resistance vs. Drain Current (II) 2015 ROHM Co., Ltd. All rights reserved. 7/10 20150730 - Rev.001
lelectrical characteristic curves Fig.16 Typical Capacitance vs. Drain - Source Voltage Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics Fig.19 Source Current vs. Source Drain Voltage 2015 ROHM Co., Ltd. All rights reserved. 8/10 20150730 - Rev.001
lmeasurement circuits Fig. 1-1 SWITCHING TIME MEASUREMENT CIRCUIT Fig. 1-2 SWITCHING WAVEFORMS Fig. 2-1 GATE CHARGE MEASUREMENT CIRCUIT Fig. 2-2 GATE CHARGE WAVEFORM lnotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 2015 ROHM Co., Ltd. All rights reserved. 9/10 20150730 - Rev.001
ldimensions 2015 ROHM Co., Ltd. All rights reserved. 10/10 20150730 - Rev.001