Automotive P-Channel 8 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) - 8 R DS(on) (Ω) at V GS = - V.25 R DS(on) (Ω) at V GS = - 6 V.29 I D (A) - 32 Configuration Single PowerPAK SO-8L Single S FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET Power MOSFET AEC-Q Qualified d % R g and UIS Tested Compliant to RoHS Directive 22/95/EC 6.5 mm 5.3 mm G D 4 G 3 S 2 S S D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free PowerPAK SO-8L -T-GE3 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 8 Gate-Source Voltage V GS ± 2 V Continuous Drain Current a T C = 25 C - 32 I D T C = 25 C - 24 Continuous Source Current (Diode Conduction) a I S - 32 A Pulsed Drain Current b I DM - 28 Single Pulse Avalanche Current I AS - 45 L =. mh Single Pulse Avalanche Energy E AS mj Maximum Power Dissipation b T C = 25 C P D T C = 25 C 33 W Operating Junction and Storage Temperature Range T J, T stg - 55 to + 75 Soldering Recommendations (Peak Temperature) e, f 26 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c R thja 65 Junction-to-Case (Drain) R thjc.5 C/W Notes a. Package limited. b. Pulse test; pulse width 3 μs, duty cycle 2 %. c. When mounted on " square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S-2288-Rev. B, 28-Nov- Document Number: 65936
SPECIFICATIONS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS =, I D = - 25 μa - 8 - - V Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = - 25 μa -.5-2. - 2.5 Gate-Source Leakage I GSS V DS = V, V GS = ± 2 V - - ± na Zero Gate Voltage Drain Current I DSS V GS = V V DS = - 8 V, T J = 25 C - - - 5 μa V GS = V V DS = - 8 V - - - V GS = V V DS = - 8 V, T J = 75 C - - - 5 On-State Drain Current a I D(on) V GS = - V V DS = -5 V - 3 - - A Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V GS = - V I D = -.2 A -.2.25 Drain-Source On-State Resistance a R DS(on) V GS = - V T J = 25 C -.36.43 V GS = - V T J = 75 C -.45.54 Ω V GS = - 6 V I D = - 8. A -.24.29 Forward Transconductance b g fs V DS = - 5 V, I D = -.2 A - 35 - S Dynamic b Input Capacitance C iss - 425 5 Output Capacitance C oss V GS = V V DS = - 4 V, f = MHz - 25 3 pf Reverse Transfer Capacitance C rss - 25 26 Total Gate Charge c Q g - 55 Gate-Source Charge c Q gs V GS = - V V DS = - 4 V, I D = -.2 A - 3 - nc Gate-Drain Charge c Q gd - 2 - Gate Resistance R g f = MHz.8 3.2 4.6 Ω Turn-On Delay Time c t d(on) - 6 2 Rise Time c t r V DD = - 4 V, R L = 4.9 Ω - 6 2 Turn-Off Delay Time c t d(off) I D - 8. A, V GEN = - V, R g = Ω - 5 8 ns Fall Time c t f - 4 5 Source-Drain Diode Ratings and Characteristics b Pulsed Current a I SM - - - 28 A Forward Voltage V SD I F = - 8. A, V GS = - -.8 -.2 V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S-2288-Rev. B, 28-Nov- 2 Document Number: 65936
TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) 4 4 32 V GS =Vthru4V 32 I D - Drain Current (A) 24 6 8 I D - Drain Current (A) 24 6 8 T C = 25 C T C = 25 C 2 4 6 8 V DS - Drain-to-Source Voltage (V) Output Characteristics T C = - 55 C 2 3 4 5 V GS - Gate-to-Source Voltage (V) Transfer Characteristics 6.5 g fs - Transconductance (S) 48 36 24 2 T C = - 55 C T C = 25 C T C = 25 C R DS(on) - On-Resistance (Ω).4.3.2. V GS =6V V GS =V 5 5 2 25 I D - Drain Current (A) Transconductance 8 6 24 32 4 I D - Drain Current (A) On-Resistance vs. Drain Current 7 C - Capacitance (pf) 6 5 4 3 2 C iss C oss V GS - Gate-to-Source Voltage (V) 8 6 4 2 I D =.2 A V DS =4V C rss 2 4 6 8 V DS - Drain-to-Source Voltage (V) Capacitance 2 4 6 8 2 Q g - Total Gate Charge (nc) Gate Charge S-2288-Rev. B, 28-Nov- 3 Document Number: 65936
TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) 2.5 (Normalized) - On-Resistance 2..7.3 I D =9.3A V GS =V V GS =6V I S - Source Current (A). T J = 5 C T J = 25 C R DS(on).9..5-5 - 25 25 5 75 25 5 75 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature...2.4.6.8..2 V SD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage.5. R DS(on) - On-Resistance (Ω).2.9.6.3 T J = 5 C V GS(th) Variance (V).8.5.2 -. I D = 25 μa I D =5mA T J = 25 C. 2 4 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage -.4-5 - 25 25 5 75 25 5 75 T J - Temperature ( C) Threshold Voltage - 8 I D =ma V DS - Drain-to-Source Voltage (V) - 84-88 - 92-96 - - 5-25 25 5 75 25 5 75 T J - Junction Temperature ( C) Drain-Source Breakdown vs. Junction Temperature S-2288-Rev. B, 28-Nov- 4 Document Number: 65936
THERMAL RATINGS (T C = 25 C, unless otherwise noted) I DM Limited µs I D - Drain Current (A) Limited by R * DS(on) I D Limited ms ms ms, s, s, DC. T C = 25 C Single Pulse BVDSS Limited... V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2 3. T JM - T A = P DM Z (t) thja Single Pulse 4. Surface Mounted. -2 - Square Wave Pulse Duration (s) Notes: P DM Normalized Thermal Transient Impedance, Junction-to-Ambient t t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = 65 C/W S-2288-Rev. B, 28-Nov- 5 Document Number: 65936
THERMAL RATINGS (T C = 25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2 Single Pulse. -4-3 -2 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.62", double sided with 2 oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65936. S-2288-Rev. B, 28-Nov- 6 Document Number: 65936
Package Information PowerPAK SO-8L Case Outline for Non-Al Parts b2 E E A L L L W E2 W3 W2 W D2 b b D D e θ.25 gauge line b3 b4 Topside view Backside view (single) K C A E2 W3 W2 W F D3 D3 D2 b3 b4 Backside view (dual) Revision: 6-May-6 Document Number: 693 For technical questions, contact: pmostechsupport@vishay.com
Package Information DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A..7.4.39.42.45 A. -.27. -.5 b.33.4.48.3.6.9 b.44.5.58.7.2.23 b2 4.8 4.9 5..89.93.97 b3.94.4 b4.47.9 c.2.25.3.8..2 D 5. 5.3 5.25.97.22.27 D 4.8 4.9 5..89.93.97 D2 3.86 3.96 4.6.52.56.6 D3.63.73.83.64.68.72 e.27 BSC.5 BSC E 6.5 6.5 6.25.238.242.246 E 4.27 4.37 4.47.68.72.76 E2 3.8 3.28 3.38.25.29.33 F - -.5 - -.6 L.62.72.82.24.28.32 L.92.7.22.36.42.48 K.5.2 W.23.9 W.4.6 W2 2.82. W3 2.96.7 - - ECN: T6-22-Rev. D, 6-May-6 DWG: 5976 Note Millimeters will gover Revision: 6-May-6 2 Document Number: 693 For technical questions, contact: pmostechsupport@vishay.com
PAD Pattern RECOMMENDED MINIMUM PAD FOR PowerPAK SO-8L SINGLE 5. (.97) 3.63 (.43) 4.6 (.6).5 (.2) 2.3 (.9) 8.25 (.325) 6.25 (.246).595 (.23).6 (.24).7 (.28).4 (.6) 2.75 (.7).86 (.34).29 (.5).82 (.32).95 (.75).27 (.5) 7.25 (.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 7-Feb-2 Document Number: 6388
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