FGPF7N33BT 33V, 7A PDP IGBT Features High current capability Low saturation voltage: V CE(sat) =.7V @ I C = 7A High input impedance Fast switching RoHS Compliant Applications PDP System General Description November 28 tm Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. G C E TO-22F Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Description Ratings Units V CES Collector to Emitter Voltage 33 V V GES Gate to Emitter Voltage ± 3 V I Cpulse() * Pulsed Collector Current @ 6 A I C pulse(2) * Pulsed Collector Current @ 22 A P D Maximum Power Dissipation @ 48 W Maximum Power Dissipation @ T C = o C 9 W T J, T stg Operating Junction Temperature and Storage Temperrature -55 to +5 o C T L Maximum Lead Temp. for soldering Purposes, /8 from case for 5 seconds 3 o C Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance, Junction to Case -- 2.62 o C/W R θja Thermal Resistance, Junction to Ambient -- 4 o C/W Notes: : Repetitive test, Pulse width=usec, Duty=. 2: Half Sine Wave, D<., pluse width < 5usec *I C _pulse limited by max Tj 28 Fairchild Semiconductor Corporation www.fairchildsemi.com
Package Marking and Ordering Information Packaging Max Qty Device Marking Device Package Type Qty per Tube per Box FGPF7N33BT FGPF7N33BTTU TO-22F Tube 5ea -- Electrical Characteristics of the IGBT T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES Collector to Emitter Breakdown Voltage V GE = V, I C = 25µA 33 -- -- V B VCES / T J Temperature Coefficient of Breakdown Voltage V GE = V, I C = 25uA --.3 -- V/ o C I CES Collector Cut-Off Current V CE = V CES, V GE = V -- -- 25 µa I GES G-E Leakage Current V GE = V GES, V CE = V -- -- ±4 na On Characteristics V GE(th) G-E Threshold Voltage I C = 25µA, V CE = V GE 2.3 3.3 4.3 V I C = 2A, V GE = 5V --. -- V V CE(sat) Collector to Emitter Saturation Voltage I C = 4A, V GE = 5V, --.4 -- V I C = 7A, V GE = 5V, --.7 -- V I C = 7A, V GE = 5V, --.8 -- V Dynamic Characteristics C ies Input Capacitance -- 38 -- pf C oes Output Capacitance V CE = 3V, V GE = V, f = MHz -- 4 -- pf C res Reverse Transfer Capacitance -- 6 -- pf Switching Characteristics t d(on) Turn-On Delay Time -- 3 -- ns t r Rise Time V CC = 2V, I C = 2A, R G = 5Ω, V GE = 5V, -- 26 -- ns t d(off) Turn-Off Delay Time Resistive Load, -- 46 -- ns t f Fall Time -- 98 -- ns t d(on) Turn-On Delay Time -- 3 -- ns t r Rise Time V CC = 2V, I C = 2A, R G = 5Ω, V GE = 5V, -- 28 -- ns t d(off) Turn-Off Delay Time Resistive Load, -- 48 -- ns t f Fall Time -- 268 -- ns Q g Total Gate Charge -- 49 -- nc Q ge Gate to Emitter Charge V CE = 2V, I C = 2A, V GE = 5V -- 6.8 -- nc Q gc Gate to Collector Charge -- 7.5 -- nc 2 www.fairchildsemi.com
Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, IC [A] 22 76 32 88 44 5V 2V 2V V 2 3 4 5 8V Figure 2. Typical Output Characteristics Collector Current, IC [A] 22 76 32 88 44 2V 5V 2V V 2 3 4 5 8V Figure 3. Typical Saturation Voltage Characteristics Collector Current, IC [A] 22 76 32 88 44 V GE = 5V Collector Current, Ic [A] Figure 4. Transfer Characteristics 22 76 32 88 44 Vce = 2V Tc=25 o C Tc=25 o C 2 3 4 5 6 2 4 6 8 2 4 6 Gate-Emitter Voltage, Vge [V] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 2..8.6.4.2. V GE = 5V 7A 4A I C = 2A.8 25 5 75 25 5 Collector-EmitterCase Temperature, T C [ o C] Figure 6. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] 2 6 2 8 4A 7A 4 I C = 2A 4 8 2 6 2 Gate-Emitter Voltage, V GE [V] 3 www.fairchildsemi.com
Typical Performance Characteristics Figure 7. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] 2 6 2 8 4A 4 7A I C = 2A 4 8 2 6 2 Gate-Emitter Voltage, V GE [V] Figure 8. Capacitance Characteristics Capacitance [pf] C ies C oes C res V GE = V, f = MHz 3 Figure 9. Gate charge Characteristics Gate-Emitter Voltage, VGE [V] 5 2 9 6 3 V CC = V 2V 2 3 4 5 6 Gate Charge, Q g [nc] Figure. Turn-on Characteristics vs. Gate Resistance 2 Collector Current, Ic [A] Figure. SOA Characteristics 5 Single Nonrepetitive ms ms. Pulse Curves must be derated linearly with increase in temperature.. 4 DC µs µs Figure 2. Turn-off Characteristics vs. Gate Resistance t r t f Switching Time [ns] t d(on) V CC = 2V, V GE = 5V I C = 2A 5 3 45 6 Gate Resistance, R G [Ω] Switching Time [ns] t d(off) V CC = 2V, V GE = 5V I C = 2A 5 3 45 6 Gate Resistance, R G [Ω] 4 www.fairchildsemi.com
Typical Performance Characteristics Figure 3. Turn-on Characteristics vs. Collector Current Switching Time [ns] V GE = 5V, R G = 5Ω t r t d(on) Switching Time [ns] Figure 4. Turn-off Characteristics vs. Collector Current V GE = 5V, R G = 5Ω t f t d(off) 2 3 4 5 6 7 Collector Current, I C [A] 2 3 4 5 6 7 Collector Current, I C [A] Figure 5. Switching Loss vs. Gate Resistance Figure 6. Switching Loss vs. Collector Current 3 E off E off Switching Loss [mj] E on V CC = 2V, V GE = 5V I C = 2A 2 3 4 5 Gate Resistance, R G [Ω] Switching Loss [mj] E on V GE = 5V, R G = 5Ω 2 3 4 5 6 7 Collector Current, I C [A] Figure 7. Turn off Switching SOA Characteristics 4 Collector Current, IC [A] Safe Operating Area V GE = 5V, 6 5 www.fairchildsemi.com
Typical Performance Characteristics Thermal Response [Zthjc]...5.3..5.2. Figure 8.Transient Thermal Impedance of IGBT single pulse Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + T C E-3 E-5 E-4 E-3.. Rectangular Pulse Duration [sec] P DM t t 2 6 www.fairchildsemi.com
Mechanical Dimensions 5.8 ±.2 3.3 ±. TO-22F.6 ±.2 ø3.8 ±. 2.54 ±.2 (7.) (.7) 6.68 ±.2 (.x45 ) 5.87 ±.2 9.75 ±.3 MAX.47.8 ±. (3 ).35 ±. #.5 +..5 2.76 ±.2 2.54TYP [2.54 ±.2] 2.54TYP [2.54 ±.2] 9.4 ±.2 4.7 ±.2 Dimensions in Millimeters 7 www.fairchildsemi.com
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