Automotive ultrafast recovery diode Datasheet - production data A K SMA SMB Features AEC-Q101 qualified Negligible switching losses Low forward and reverse recovery times High junction temperature ECOPACK 2 compliant component Description This device that uses ST's new 400 V planar Pt doping technology, is specially suited for switching mode base drive and transistor circuits. Packaged in SMB and SMA, it is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection in automotive applications. Table 1: Device summary Symbol IF(AV) VRRM Value 1 A 400 V Tj (max.) 175 C VF (typ.) trr (typ.) 0.9 V 14 ns March 2017 DocID024449 Rev 2 1/12 This is information on a product in full production. www.st.com
Characteristics STTH1R04-Y 1 Characteristics Table 2: Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage Tj = -40 C to +175 C 400 V IF(AV) IFSM Average forward current, δ = 0.5, square wave Surge non repetitive forward current SMA Tl = 130 C SMB Tl = 140 C tp = 10 ms sinusoidal 30 tp = 8.3 ms sinusoidal 37 1.0 A Tstg Storage temperature range -65 to +175 C Tj Operating junction temperature (1) -40 to +175 C Notes: (1) (dptot/dtj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. A Table 3: Thermal resistance parameters Symbol Parameter Maximum value Unit Rth(j-l) SMA 30 Junction to lead C/W SMB 25 Table 4: Static electrical characteristics ( per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) VF (2) Reverse leakage current Forward voltage drop Notes: (1) Pulse test: tp = 5 ms, δ < 2% (2) Pulse test: tp = 380 µs, δ < 2% Tj = 25 C - 5 VR = VRRM Tj = 125 C - 5 50 Tj = 25 C - 1.30 1.60 Tj = 100 C IF = 1 A - 1.05 1.30 Tj = 150 C - 0.90 1.15 µa V To evaluate the conduction losses, use the following equation: P = 0.9 x IF(AV) + 0.250 x IF 2 (RMS) 2/12 DocID024449 Rev 2
Characteristics Table 5: Dynamic electrical characteristics per diode (Tj = 25 C, unless otherwise specified) Symbol Parameters Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 1 A dif/dt = -50 A/μs VR = 30 V IF = 1 A dif/dt = -100 A/μs VR = 30 V - 30-14 20 ns IRM Reverse recovery current IF = 1 A dif/dt = -200 A/μs VR = 320 V Tj = 125 C - 2.5 3.5 A VFP Forward recovery voltage IF = 1 A dif/dt = 100 A/μs - 2.9 V tfr Forward recovery time IF = 1 A dif/dt = 100 A/μs VFR = 1.1 x VF (max) - 50 ns DocID024449 Rev 2 3/12
Characteristics 1.1 Characteristics (curves) Figure 1: Conduction losses versus average forward current STTH1R04-Y Figure 2: Forward voltage drop versus forward current P (W) F( AV ) 1.6 1.4 1.2 1.0 0.8 0.6 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 I FM (A) 100.0 10.0 1.0 T j =150 C (Typical values) T j =150 C (Maximum values) T j =25 C (Maximum values) 0.4 T 0.2 I F( AV ) (A) 0.0 δ=tp/t tp 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 V FM (V) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 Figure 3: Relative variation of thermal impedance junction to case ambient versus pulse duration (SMA) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Z th (j-a)/rth(j-a) SMA S cu = 1cm² Single pulse t P (s) 0.0 0.0 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Figure 4: Relative variation of thermal impedance junction to case ambient versus pulse duration (SMB) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Z th (j-a)/rth(j-a) SMB S cu = 1 cm Single pulse t P (s) 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 10 Figure 5: Junction capacitance versus reverse voltage applied (typical values) C(pF) 100 F=1MHz V OSC =30mV RMS T j =25 C Figure 6: Reverse recovery charges versus dif / dt (typical values) T j =25 C 4 di F /dt(a/µs) V R (V) 0 1 10 100 1000 1 10 100 1000 40 36 32 28 24 20 16 12 8 Q RR (nc) I F = 1 A V R =320 V T j =125 C 4/12 DocID024449 Rev 2
70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 Figure 7: Reverse recovery time versus dif / dt (typical values) t RR (ns) T j =125 C T j =25 C di F /dt(a/µs) I F = 1 A V R =320 V 10 100 1000 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Characteristics Figure 8: Peak reverse recovery current versus dif / dt (typical values) I RM (A) 5.0 I F = 1 A V R =320 V T j =125 C T j =25 C di F /dt(a/µs) 0.0 10 100 1000 Figure 9: Relative variation of dynamic parameters versus junction temperature Figure 10: Transient peak forward voltage versus dif / dt (typical values) 1.4 1.2 1.0 0.8 0.6 0.4 Q RR ; I RM [T j ] j / Q RR ; I RM [T j =125 C] j I F = 1 A V R =320 V I RM Q RR V Fp (V) 30 I F =1 A T j =125 C 25 20 15 10 0.2 T j ( C) 0.0 25 50 75 100 125 150 5 di F /dt(a/µs) 0 0 50 100 150 200 250 300 350 400 450 500 Figure 11: Forward recovery time versus dif / dt (typical values) 55 50 45 40 35 30 25 20 15 10 t FR (ns) I F =1 A T j =125 C 5 di F/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 Figure 12: Thermal resistance junction to ambient total versus copper surface under each lead (SMA) 200 150 100 50 R th (j-a) ( C/W) epoxy printed board FR4, copper thickness Cu = 35 µm SMA S CU (cm²) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 DocID024449 Rev 2 5/12
Characteristics Figure 13: Thermal resistance junction to ambient total versus copper surface under each lead (SMB) STTH1R04-Y 200 R th (j-a) ( C/W) epoxy printed board FR4, copper thickness Cu = 35 µm SMB 150 100 50 S CU (cm²) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6/12 DocID024449 Rev 2
Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 SMA package information Figure 14: SMA package outline Table 6: SMA package mechanical data Ref. Dimensions Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.097 A2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.40 0.006 0.016 D 2.25 2.90 0.089 0.114 E 4.80 5.35 0.189 0.211 E1 3.95 4.60 0.156 0.181 L 0.75 1.50 0.030 0.059 DocID024449 Rev 2 7/12
Package information Figure 15: SMA recommended footprint in mm (inches) STTH1R04-Y 1.4 (0.055) 2.63 (0.103) 1.4 (0.055) 1.64 (0.064) 5.43 (0.214) 8/12 DocID024449 Rev 2
2.2 SMB package information Figure 16: SMB package outline Package information Table 7: SMB package mechanical data Ref. Dimensions Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.0748 0.0965 A2 0.05 0.20 0.0020 0.0079 b 1.95 2.20 0.0768 0.0867 c 0.15 0.40 0.0059 0.0157 D 3.30 3.95 0.1299 0.1556 E 5.10 5.60 0.2008 0.2205 E1 4.05 4.60 0.1594 0.1811 L 0.75 1.50 0.0295 0.0591 DocID024449 Rev 2 9/12
Package information Figure 17: SMB recommended Footprint STTH1R04-Y 1.62 0.064 2.60 (0.102) 1.62 0.064 2.18 (0.086) 5.84 (0.230) millimeters (inches) 10/12 DocID024449 Rev 2
Ordering information 3 Ordering information Table 8: Ordering information Order code Marking Package Weight Base qty. Delivery mode STTH1R04AY HR4Y SMA 0.068 g 5000 Tape and reel STTH1R04UY BR4Y SMB 0.12 g 2500 Tape and reel 4 Revision history Date Revis ion 09-Jul-2013 1 First issue 16-Mar-2017 2 Table 9: Document revision history Changes Updated Table 2: "Absolute ratings (limiting values per diode at 25 C, unless otherwise specified)". DocID024449 Rev 2 11/12
IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 2017 STMicroelectronics All rights reserved 12/12 DocID024449 Rev 2